JPS5081262A - - Google Patents

Info

Publication number
JPS5081262A
JPS5081262A JP49112675A JP11267574A JPS5081262A JP S5081262 A JPS5081262 A JP S5081262A JP 49112675 A JP49112675 A JP 49112675A JP 11267574 A JP11267574 A JP 11267574A JP S5081262 A JPS5081262 A JP S5081262A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP49112675A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5081262A publication Critical patent/JPS5081262A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/261—Bombardment with radiation to produce a nuclear reaction transmuting chemical elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/153—Solar cells-implantations-laser beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/165—Transmutation doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP49112675A 1973-11-12 1974-09-30 Pending JPS5081262A (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2356376A DE2356376A1 (de) 1973-11-12 1973-11-12 Verfahren zum herstellen von homogen dotierten siliciumeinkristallen mit n-leitfaehigkeit durch neutronenbestrahlung

Publications (1)

Publication Number Publication Date
JPS5081262A true JPS5081262A (enExample) 1975-07-01

Family

ID=5897844

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49112675A Pending JPS5081262A (enExample) 1973-11-12 1974-09-30

Country Status (5)

Country Link
US (1) US4042454A (enExample)
JP (1) JPS5081262A (enExample)
BE (1) BE817707A (enExample)
CA (1) CA1045523A (enExample)
DE (1) DE2356376A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52109865A (en) * 1976-03-12 1977-09-14 Nippon Telegr & Teleph Corp <Ntt> Inpurity adding method to silicon
JP2007176725A (ja) * 2005-12-27 2007-07-12 Shin Etsu Handotai Co Ltd 中性子照射シリコン単結晶の製造方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4129463A (en) * 1977-06-29 1978-12-12 The United States Of America As Represented By The United States Department Of Energy Polycrystalline silicon semiconducting material by nuclear transmutation doping
US4277307A (en) * 1977-10-17 1981-07-07 Siemens Aktiengesellschaft Method of restoring Si crystal lattice order after neutron irradiation
DE2753488C2 (de) * 1977-12-01 1986-06-19 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung von n-dotiertem Silicium durch Neutronenbestrahlung
US4857259A (en) * 1986-05-16 1989-08-15 Westinghouse Electric Corp. Neutron dosimeter
US5146296A (en) * 1987-12-03 1992-09-08 Xsirius Photonics, Inc. Devices for detecting and/or imaging single photoelectron
DE3942387A1 (de) * 1989-12-21 1991-06-27 Florian Fischer Transportsystem, insbesondere zum transportieren von siliziumeinkristallen durch das becken eines forschungsreaktors
RU2145128C1 (ru) * 1998-03-19 2000-01-27 Закрытое акционерное общество "ЭЛЛИНА-НТ" СПОСОБ ПОЛУЧЕНИЯ ЯДЕРНО-ЛЕГИРОВАННОГО КРЕМНИЯ n-ТИПА (ВАРИАНТЫ)
AU5966600A (en) * 1999-07-19 2001-02-05 Topsil Semiconductor Materials A/S Method and apparatus for production of a doped feed rod by ion implantation
RU2202655C1 (ru) * 2002-04-23 2003-04-20 Московский государственный институт стали и сплавов (технологический университет) Способ получения резистентного кремния

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3134700A (en) * 1959-04-22 1964-05-26 Siemens Ag Dislocation removal by a last pass starting at a location displaced from the original seed into the grown crystal
NL258192A (enExample) * 1959-12-15
GB926487A (en) * 1960-11-25 1963-05-22 Dorman & Smith Ltd Improvements in and relating to electrical fuse assemblies
US3255050A (en) * 1962-03-23 1966-06-07 Carl N Klahr Fabrication of semiconductor devices by transmutation doping
US3366462A (en) * 1964-11-04 1968-01-30 Siemens Ag Method of producing monocrystalline semiconductor material
DE1519888B2 (de) * 1966-04-15 1970-04-16 Siemens AG, 1000 Berlin u. 8000 München Verfahren zum tiegelfreien Zonenschmelzen
US3734695A (en) * 1970-08-13 1973-05-22 Monsanto Co Process for making monocrystalline silicon

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52109865A (en) * 1976-03-12 1977-09-14 Nippon Telegr & Teleph Corp <Ntt> Inpurity adding method to silicon
JP2007176725A (ja) * 2005-12-27 2007-07-12 Shin Etsu Handotai Co Ltd 中性子照射シリコン単結晶の製造方法

Also Published As

Publication number Publication date
CA1045523A (en) 1979-01-02
US4042454A (en) 1977-08-16
BE817707A (fr) 1974-11-18
DE2356376A1 (de) 1975-05-15

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