AU5966600A - Method and apparatus for production of a doped feed rod by ion implantation - Google Patents

Method and apparatus for production of a doped feed rod by ion implantation

Info

Publication number
AU5966600A
AU5966600A AU59666/00A AU5966600A AU5966600A AU 5966600 A AU5966600 A AU 5966600A AU 59666/00 A AU59666/00 A AU 59666/00A AU 5966600 A AU5966600 A AU 5966600A AU 5966600 A AU5966600 A AU 5966600A
Authority
AU
Australia
Prior art keywords
production
ion implantation
feed rod
doped feed
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU59666/00A
Inventor
Leif Jensen
Jan Vedde
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cemat AS
Original Assignee
Topsil Semiconductor Materials AS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Topsil Semiconductor Materials AS filed Critical Topsil Semiconductor Materials AS
Publication of AU5966600A publication Critical patent/AU5966600A/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AU59666/00A 1999-07-19 2000-07-14 Method and apparatus for production of a doped feed rod by ion implantation Abandoned AU5966600A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DKPA199901042 1999-07-19
DKPA199901042 1999-07-19
PCT/DK2000/000402 WO2001006041A1 (en) 1999-07-19 2000-07-14 Method and apparatus for production of a doped feed rod by ion implantation

Publications (1)

Publication Number Publication Date
AU5966600A true AU5966600A (en) 2001-02-05

Family

ID=8100346

Family Applications (1)

Application Number Title Priority Date Filing Date
AU59666/00A Abandoned AU5966600A (en) 1999-07-19 2000-07-14 Method and apparatus for production of a doped feed rod by ion implantation

Country Status (2)

Country Link
AU (1) AU5966600A (en)
WO (1) WO2001006041A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1595006B1 (en) 2003-02-11 2006-07-12 Topsil Semiconductor Materials A/S An apparatus for and a method of manufacturing a single crystal rod
ITVI20110323A1 (en) * 2011-12-19 2013-06-20 Pvd Technologies Snc Di Vidani A E A FORCED DRIVING METHOD OF A SEMICONDUCTOR MATERIAL LINE AND PLANT THAT MAKES THIS METHOD

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1186127A (en) * 1968-01-05 1970-04-02 Dow Corning Method and Apparatus for Doping Semiconductors.
DE2356376A1 (en) * 1973-11-12 1975-05-15 Siemens Ag PROCESS FOR PRODUCING HOMOGENOUS DOPED SILICON CRYSTALS WITH N-CONDUCTIVITY BY NEUTRON RADIATION
DE2415717A1 (en) * 1974-04-01 1975-10-16 Siemens Ag Reproducible doping of (silicon monocrystal) semiconductor rod - by incorporating dopant in surface layer and non-crucible zone melting
DE2427645A1 (en) * 1974-06-07 1976-01-02 Siemens Ag Doping semiconductor crystal rod - by forming doped layer by nuclear reaction before zone melting, giving reproducible results
US4094730A (en) * 1977-03-11 1978-06-13 The United States Of America As Represented By The Secretary Of The Air Force Method for fabrication of high minority carrier lifetime, low to moderate resistivity, single crystal silicon
US4270972A (en) * 1980-03-31 1981-06-02 Rockwell International Corporation Method for controlled doping semiconductor material with highly volatile dopant
US4556448A (en) * 1983-10-19 1985-12-03 International Business Machines Corporation Method for controlled doping of silicon crystals by improved float zone technique
JPH085663B2 (en) * 1987-05-29 1996-01-24 三菱マテリアル株式会社 Si-B alloy dopant material for producing Si single crystal by pulling method

Also Published As

Publication number Publication date
WO2001006041A1 (en) 2001-01-25

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase