BE800673A - Procede de formation d'une epaisseur de couche de soudure predeterminee lors de la fabrication d'elements de montage semi-conducteurs - Google Patents
Procede de formation d'une epaisseur de couche de soudure predeterminee lors de la fabrication d'elements de montage semi-conducteursInfo
- Publication number
- BE800673A BE800673A BE132058A BE132058A BE800673A BE 800673 A BE800673 A BE 800673A BE 132058 A BE132058 A BE 132058A BE 132058 A BE132058 A BE 132058A BE 800673 A BE800673 A BE 800673A
- Authority
- BE
- Belgium
- Prior art keywords
- manufacturing
- forming
- layer thickness
- mounting elements
- semiconductor mounting
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
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- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
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- H05K2201/2036—Permanent spacer or stand-off in a printed circuit or printed circuit assembly
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Die Bonding (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2228703A DE2228703A1 (de) | 1972-06-13 | 1972-06-13 | Verfahren zum herstellen einer vorgegebenen lotschichtstaerke bei der fertigung von halbleiterbauelementen |
Publications (1)
Publication Number | Publication Date |
---|---|
BE800673A true BE800673A (fr) | 1973-10-01 |
Family
ID=5847611
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE132058A BE800673A (fr) | 1972-06-13 | 1973-06-08 | Procede de formation d'une epaisseur de couche de soudure predeterminee lors de la fabrication d'elements de montage semi-conducteurs |
Country Status (7)
Country | Link |
---|---|
US (1) | US3900153A (ko) |
JP (1) | JPS4951872A (ko) |
BE (1) | BE800673A (ko) |
DE (1) | DE2228703A1 (ko) |
FR (1) | FR2188307B1 (ko) |
GB (1) | GB1440196A (ko) |
IT (1) | IT989087B (ko) |
Families Citing this family (86)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5318959U (ko) * | 1976-07-28 | 1978-02-17 | ||
JPS575879Y2 (ko) * | 1977-03-14 | 1982-02-03 | ||
US4402450A (en) * | 1981-08-21 | 1983-09-06 | Western Electric Company, Inc. | Adapting contacts for connection thereto |
US4487638A (en) * | 1982-11-24 | 1984-12-11 | Burroughs Corporation | Semiconductor die-attach technique and composition therefor |
US4705205A (en) * | 1983-06-30 | 1987-11-10 | Raychem Corporation | Chip carrier mounting device |
US4664309A (en) * | 1983-06-30 | 1987-05-12 | Raychem Corporation | Chip mounting device |
ATE48103T1 (de) * | 1984-05-14 | 1989-12-15 | Raychem Corp | Weichlotzusammensetzung. |
DE3442537A1 (de) * | 1984-11-22 | 1986-05-22 | BBC Aktiengesellschaft Brown, Boveri & Cie., Baden, Aargau | Verfahren zum blasenfreien verbinden eines grossflaechigen halbleiter-bauelements mit einem als substrat dienenden bauteil mittels loeten |
US5917707A (en) | 1993-11-16 | 1999-06-29 | Formfactor, Inc. | Flexible contact structure with an electrically conductive shell |
EP0331500B1 (en) * | 1988-03-04 | 1993-01-07 | Kabushiki Kaisha Toshiba | Brazing paste for bonding metal and ceramic |
JPH025541A (ja) * | 1988-06-24 | 1990-01-10 | Asahi Daiyamondo Kogyo Kk | ボンディングツールの製造方法 |
US5093545A (en) * | 1988-09-09 | 1992-03-03 | Metcal, Inc. | Method, system and composition for soldering by induction heating |
JPH0741159Y2 (ja) * | 1988-10-07 | 1995-09-20 | 日本特殊陶業株式会社 | 気密封止型セラミックパッケージ |
AU4517589A (en) * | 1988-10-24 | 1990-05-14 | Handy & Harman Automotive Group Inc. | Brazing paste for joining materials with dissimilar thermal expansion rates |
JPH02207539A (ja) * | 1989-02-07 | 1990-08-17 | Sanken Electric Co Ltd | 半導体装置 |
US5076485A (en) * | 1990-04-24 | 1991-12-31 | Microelectronics And Computer Technology Corporation | Bonding electrical leads to pads with particles |
US4995551A (en) * | 1990-04-24 | 1991-02-26 | Microelectronics And Computer Technology Corporation | Bonding electrical leads to pads on electrical components |
JPH06232188A (ja) * | 1993-01-29 | 1994-08-19 | Nec Corp | 半田材の製造方法 |
FR2706139B1 (fr) * | 1993-06-08 | 1995-07-21 | Thomson Csf | Matériau pour brasure. |
US20020053734A1 (en) | 1993-11-16 | 2002-05-09 | Formfactor, Inc. | Probe card assembly and kit, and methods of making same |
US7073254B2 (en) | 1993-11-16 | 2006-07-11 | Formfactor, Inc. | Method for mounting a plurality of spring contact elements |
US5820014A (en) * | 1993-11-16 | 1998-10-13 | Form Factor, Inc. | Solder preforms |
JP3223678B2 (ja) * | 1993-12-24 | 2001-10-29 | 三菱電機株式会社 | はんだ付け用フラックスおよびクリームはんだ |
US5540379A (en) * | 1994-05-02 | 1996-07-30 | Motorola, Inc. | Soldering process |
JPH0997791A (ja) * | 1995-09-27 | 1997-04-08 | Internatl Business Mach Corp <Ibm> | バンプ構造、バンプの形成方法、実装接続体 |
ATE203355T1 (de) * | 1995-06-27 | 2001-08-15 | Braun Gmbh | Wärmeleite-befestigung eines elektronischen leistungsbauelementes auf einer leiterplatte mit kühlblech |
US8033838B2 (en) | 1996-02-21 | 2011-10-11 | Formfactor, Inc. | Microelectronic contact structure |
US5994152A (en) * | 1996-02-21 | 1999-11-30 | Formfactor, Inc. | Fabricating interconnects and tips using sacrificial substrates |
DE19611396A1 (de) * | 1996-03-22 | 1997-09-25 | Emitec Emissionstechnologie | Gelöteter metallischer Wabenkörper mit Abstandshaltern in den Lötspalten und Verfahren und Lot zu seiner Herstellung |
US5931371A (en) * | 1997-01-16 | 1999-08-03 | Ford Motor Company | Standoff controlled interconnection |
US20010048888A1 (en) * | 2000-03-24 | 2001-12-06 | Rong-Fong Huang | Anti-scavenging solders for silver metallization and method |
GB2372473B (en) * | 2001-02-24 | 2003-04-16 | Marconi Caswell Ltd | A method of soldering |
US20060027899A1 (en) * | 2004-06-25 | 2006-02-09 | Tessera, Inc. | Structure with spherical contact pins |
US7179558B2 (en) * | 2004-07-15 | 2007-02-20 | Delphi Technologies, Inc. | Braze alloy containing particulate material |
JP5592055B2 (ja) * | 2004-11-03 | 2014-09-17 | テッセラ,インコーポレイテッド | 積層パッケージングの改良 |
US8168347B2 (en) | 2004-12-30 | 2012-05-01 | Delphi Technologies Inc. | SOFC assembly joint spacing |
US8058101B2 (en) * | 2005-12-23 | 2011-11-15 | Tessera, Inc. | Microelectronic packages and methods therefor |
US8482111B2 (en) | 2010-07-19 | 2013-07-09 | Tessera, Inc. | Stackable molded microelectronic packages |
US9159708B2 (en) | 2010-07-19 | 2015-10-13 | Tessera, Inc. | Stackable molded microelectronic packages with area array unit connectors |
KR101075241B1 (ko) | 2010-11-15 | 2011-11-01 | 테세라, 인코포레이티드 | 유전체 부재에 단자를 구비하는 마이크로전자 패키지 |
US20120146206A1 (en) | 2010-12-13 | 2012-06-14 | Tessera Research Llc | Pin attachment |
KR101128063B1 (ko) | 2011-05-03 | 2012-04-23 | 테세라, 인코포레이티드 | 캡슐화 층의 표면에 와이어 본드를 구비하는 패키지 적층형 어셈블리 |
US8618659B2 (en) | 2011-05-03 | 2013-12-31 | Tessera, Inc. | Package-on-package assembly with wire bonds to encapsulation surface |
US8872318B2 (en) | 2011-08-24 | 2014-10-28 | Tessera, Inc. | Through interposer wire bond using low CTE interposer with coarse slot apertures |
US8836136B2 (en) | 2011-10-17 | 2014-09-16 | Invensas Corporation | Package-on-package assembly with wire bond vias |
US8946757B2 (en) | 2012-02-17 | 2015-02-03 | Invensas Corporation | Heat spreading substrate with embedded interconnects |
US9349706B2 (en) | 2012-02-24 | 2016-05-24 | Invensas Corporation | Method for package-on-package assembly with wire bonds to encapsulation surface |
US8372741B1 (en) | 2012-02-24 | 2013-02-12 | Invensas Corporation | Method for package-on-package assembly with wire bonds to encapsulation surface |
US8835228B2 (en) | 2012-05-22 | 2014-09-16 | Invensas Corporation | Substrate-less stackable package with wire-bond interconnect |
US9391008B2 (en) | 2012-07-31 | 2016-07-12 | Invensas Corporation | Reconstituted wafer-level package DRAM |
US9502390B2 (en) | 2012-08-03 | 2016-11-22 | Invensas Corporation | BVA interposer |
US8975738B2 (en) | 2012-11-12 | 2015-03-10 | Invensas Corporation | Structure for microelectronic packaging with terminals on dielectric mass |
US8878353B2 (en) | 2012-12-20 | 2014-11-04 | Invensas Corporation | Structure for microelectronic packaging with bond elements to encapsulation surface |
US9136254B2 (en) | 2013-02-01 | 2015-09-15 | Invensas Corporation | Microelectronic package having wire bond vias and stiffening layer |
US9023691B2 (en) | 2013-07-15 | 2015-05-05 | Invensas Corporation | Microelectronic assemblies with stack terminals coupled by connectors extending through encapsulation |
US8883563B1 (en) | 2013-07-15 | 2014-11-11 | Invensas Corporation | Fabrication of microelectronic assemblies having stack terminals coupled by connectors extending through encapsulation |
US9034696B2 (en) | 2013-07-15 | 2015-05-19 | Invensas Corporation | Microelectronic assemblies having reinforcing collars on connectors extending through encapsulation |
US9167710B2 (en) | 2013-08-07 | 2015-10-20 | Invensas Corporation | Embedded packaging with preformed vias |
US9685365B2 (en) | 2013-08-08 | 2017-06-20 | Invensas Corporation | Method of forming a wire bond having a free end |
US20150076714A1 (en) | 2013-09-16 | 2015-03-19 | Invensas Corporation | Microelectronic element with bond elements to encapsulation surface |
DE102013110812B3 (de) * | 2013-09-30 | 2014-10-09 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Herstellung eines weitergebildeten Metallformkörpers und Verfahren zur Herstellung einer Leistungshalbleitereinrichtung mit einer Lotverbindung diesen weitergebildeten Metallformkörper verwendend. |
US9082753B2 (en) | 2013-11-12 | 2015-07-14 | Invensas Corporation | Severing bond wire by kinking and twisting |
US9087815B2 (en) | 2013-11-12 | 2015-07-21 | Invensas Corporation | Off substrate kinking of bond wire |
US9583456B2 (en) | 2013-11-22 | 2017-02-28 | Invensas Corporation | Multiple bond via arrays of different wire heights on a same substrate |
US9379074B2 (en) | 2013-11-22 | 2016-06-28 | Invensas Corporation | Die stacks with one or more bond via arrays of wire bond wires and with one or more arrays of bump interconnects |
US9263394B2 (en) | 2013-11-22 | 2016-02-16 | Invensas Corporation | Multiple bond via arrays of different wire heights on a same substrate |
US9583411B2 (en) | 2014-01-17 | 2017-02-28 | Invensas Corporation | Fine pitch BVA using reconstituted wafer with area array accessible for testing |
US9214454B2 (en) | 2014-03-31 | 2015-12-15 | Invensas Corporation | Batch process fabrication of package-on-package microelectronic assemblies |
US10381326B2 (en) | 2014-05-28 | 2019-08-13 | Invensas Corporation | Structure and method for integrated circuits packaging with increased density |
US9646917B2 (en) | 2014-05-29 | 2017-05-09 | Invensas Corporation | Low CTE component with wire bond interconnects |
US9412714B2 (en) | 2014-05-30 | 2016-08-09 | Invensas Corporation | Wire bond support structure and microelectronic package including wire bonds therefrom |
US9735084B2 (en) | 2014-12-11 | 2017-08-15 | Invensas Corporation | Bond via array for thermal conductivity |
US9888579B2 (en) | 2015-03-05 | 2018-02-06 | Invensas Corporation | Pressing of wire bond wire tips to provide bent-over tips |
US9502372B1 (en) | 2015-04-30 | 2016-11-22 | Invensas Corporation | Wafer-level packaging using wire bond wires in place of a redistribution layer |
US9761554B2 (en) | 2015-05-07 | 2017-09-12 | Invensas Corporation | Ball bonding metal wire bond wires to metal pads |
US9490222B1 (en) | 2015-10-12 | 2016-11-08 | Invensas Corporation | Wire bond wires for interference shielding |
US10490528B2 (en) | 2015-10-12 | 2019-11-26 | Invensas Corporation | Embedded wire bond wires |
US10332854B2 (en) | 2015-10-23 | 2019-06-25 | Invensas Corporation | Anchoring structure of fine pitch bva |
US10181457B2 (en) | 2015-10-26 | 2019-01-15 | Invensas Corporation | Microelectronic package for wafer-level chip scale packaging with fan-out |
US10043779B2 (en) | 2015-11-17 | 2018-08-07 | Invensas Corporation | Packaged microelectronic device for a package-on-package device |
US9659848B1 (en) | 2015-11-18 | 2017-05-23 | Invensas Corporation | Stiffened wires for offset BVA |
US9984992B2 (en) | 2015-12-30 | 2018-05-29 | Invensas Corporation | Embedded wire bond wires for vertical integration with separate surface mount and wire bond mounting surfaces |
US9935075B2 (en) | 2016-07-29 | 2018-04-03 | Invensas Corporation | Wire bonding method and apparatus for electromagnetic interference shielding |
US10299368B2 (en) | 2016-12-21 | 2019-05-21 | Invensas Corporation | Surface integrated waveguides and circuit structures therefor |
JP6551432B2 (ja) | 2017-02-08 | 2019-07-31 | トヨタ自動車株式会社 | 半導体装置とその製造方法 |
DE102020000913A1 (de) | 2020-02-12 | 2021-08-12 | Pfarr - Stanztechnik Gesellschaft mit beschränkter Haftung | Bleifreie Lötfolie |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2530552A (en) * | 1946-01-08 | 1950-11-21 | Champion Paper & Fibre Co | Soldering method for positioning strip material |
US3193920A (en) * | 1959-08-17 | 1965-07-13 | Eitel Mccullough Inc | Pressure sealing of plated envelope sections |
US3209449A (en) * | 1960-06-28 | 1965-10-05 | Fairchild Hiller Corp | Brazing process and assembly employing spacing elements and capillary-sized passages |
NL274757A (ko) * | 1961-02-15 | 1900-01-01 | ||
CH400373A (de) * | 1963-01-22 | 1965-10-15 | Bbc Brown Boveri & Cie | Lötverbindung für Halbleiterelemente |
US3292240A (en) * | 1963-08-08 | 1966-12-20 | Ibm | Method of fabricating microminiature functional components |
-
1972
- 1972-06-13 DE DE2228703A patent/DE2228703A1/de not_active Ceased
-
1973
- 1973-06-06 GB GB2706473A patent/GB1440196A/en not_active Expired
- 1973-06-08 BE BE132058A patent/BE800673A/xx unknown
- 1973-06-12 IT IT25237/73A patent/IT989087B/it active
- 1973-06-13 US US369495A patent/US3900153A/en not_active Expired - Lifetime
- 1973-06-13 FR FR7321533A patent/FR2188307B1/fr not_active Expired
- 1973-06-13 JP JP48065979A patent/JPS4951872A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
DE2228703B2 (ko) | 1974-11-28 |
DE2228703A1 (de) | 1974-01-10 |
FR2188307A1 (ko) | 1974-01-18 |
US3900153A (en) | 1975-08-19 |
FR2188307B1 (ko) | 1978-02-10 |
GB1440196A (en) | 1976-06-23 |
IT989087B (it) | 1975-05-20 |
JPS4951872A (ko) | 1974-05-20 |
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