BE791927A - Procede de depot par croissance epitaxiale de couches de cristaux semi-conducteurs - Google Patents

Procede de depot par croissance epitaxiale de couches de cristaux semi-conducteurs

Info

Publication number
BE791927A
BE791927A BE791927DA BE791927A BE 791927 A BE791927 A BE 791927A BE 791927D A BE791927D A BE 791927DA BE 791927 A BE791927 A BE 791927A
Authority
BE
Belgium
Prior art keywords
layers
epitaxial growth
deposit process
semiconductor crystals
crystals
Prior art date
Application number
Other languages
English (en)
French (fr)
Inventor
A A Bergh
C R Paola
R H Saul
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of BE791927A publication Critical patent/BE791927A/xx

Links

Classifications

    • H10P14/3418—
    • H10P14/263—
    • H10P14/265—
    • H10P14/3442—
    • H10P14/3444—
    • H10P14/3446—
BE791927D 1971-11-29 Procede de depot par croissance epitaxiale de couches de cristaux semi-conducteurs BE791927A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US20283771A 1971-11-29 1971-11-29

Publications (1)

Publication Number Publication Date
BE791927A true BE791927A (fr) 1973-03-16

Family

ID=22751461

Family Applications (1)

Application Number Title Priority Date Filing Date
BE791927D BE791927A (fr) 1971-11-29 Procede de depot par croissance epitaxiale de couches de cristaux semi-conducteurs

Country Status (10)

Country Link
US (1) US3690965A (cg-RX-API-DMAC10.html)
AU (1) AU459386B2 (cg-RX-API-DMAC10.html)
BE (1) BE791927A (cg-RX-API-DMAC10.html)
CA (1) CA954421A (cg-RX-API-DMAC10.html)
DE (1) DE2257834A1 (cg-RX-API-DMAC10.html)
ES (1) ES409385A1 (cg-RX-API-DMAC10.html)
FR (1) FR2162033A1 (cg-RX-API-DMAC10.html)
GB (1) GB1379414A (cg-RX-API-DMAC10.html)
IL (1) IL40925A0 (cg-RX-API-DMAC10.html)
NL (1) NL7215876A (cg-RX-API-DMAC10.html)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7213557A (cg-RX-API-DMAC10.html) * 1971-10-06 1973-04-10
JPS5318151B2 (cg-RX-API-DMAC10.html) * 1971-12-14 1978-06-13
US3767481A (en) * 1972-04-07 1973-10-23 Rca Corp Method for epitaxially growing layers of a semiconductor material from the liquid phase
JPS5342230B2 (cg-RX-API-DMAC10.html) * 1972-10-19 1978-11-09
US3859148A (en) * 1972-12-01 1975-01-07 Bell Telephone Labor Inc Epitaxial crystal growth of group iii-v compound semiconductors from solution
JPS49102652U (cg-RX-API-DMAC10.html) * 1972-12-22 1974-09-04
US3762367A (en) * 1973-01-12 1973-10-02 Handotai Kenkyu Shinkokai Growth apparatus for a liquid growth multi-layer film
JPS5320193B2 (cg-RX-API-DMAC10.html) * 1973-01-25 1978-06-24
JPS49131678A (cg-RX-API-DMAC10.html) * 1973-04-21 1974-12-17
US3853643A (en) * 1973-06-18 1974-12-10 Bell Telephone Labor Inc Epitaxial growth of group iii-v semiconductors from solution
FR2319268A1 (fr) * 1973-07-03 1977-02-18 Radiotechnique Compelec Diode electroluminescente protegee
JPS5418905B2 (cg-RX-API-DMAC10.html) * 1973-10-24 1979-07-11
JPS5120081A (en) * 1974-08-12 1976-02-17 Hitachi Ltd Ketsushoseichohoho oyobi sochi
JPS5515316Y2 (cg-RX-API-DMAC10.html) * 1975-10-09 1980-04-09
JPS5252570A (en) * 1975-10-27 1977-04-27 Hitachi Ltd Device for production of compound semiconductor
JPS55163835A (en) * 1979-06-06 1980-12-20 Toshiba Corp Selective liquid phase growth of on semiconductor region
NL185375C (nl) * 1980-01-16 1990-03-16 Philips Nv Inrichting voor het epitaxiaal aanbrengen van een laag halfgeleidermateriaal.
FR2481325A1 (fr) * 1980-04-23 1981-10-30 Radiotechnique Compelec Nacelle utilisable pour des depots epitaxiques multicouches en phase liquide et procede de depot mettant en jeu ladite nacelle
US4317689A (en) * 1980-07-18 1982-03-02 Honeywell Inc. Mercury containment for liquid phase growth of mercury cadmium telluride from tellurium-rich solution
US4470368A (en) * 1982-03-10 1984-09-11 At&T Bell Laboratories LPE Apparatus with improved thermal geometry
US4574730A (en) * 1984-02-27 1986-03-11 Northern Telecom Limited Melt dispensing liquid phase epitaxy boat
US4547230A (en) * 1984-07-30 1985-10-15 The United States Of America As Represented By The Secretary Of The Air Force LPE Semiconductor material transfer method
JPH0634956B2 (ja) * 1987-08-06 1994-05-11 セントラル硝子株式会社 薄膜のコ−ティング方法およびその装置
IT1231384B (it) * 1988-08-26 1991-12-02 Central Glass Co Ltd Procedimento e dispositivo per rivestire la superficie di una piastra con una pellicola sottile di liquido.
US5223079A (en) * 1991-03-18 1993-06-29 Motorola, Inc. Forming thin liquid phase epitaxial layers
US20100102419A1 (en) * 2008-10-28 2010-04-29 Eric Ting-Shan Pan Epitaxy-Level Packaging (ELP) System
US8193078B2 (en) 2008-10-28 2012-06-05 Athenaeum, Llc Method of integrating epitaxial film onto assembly substrate
US7905197B2 (en) 2008-10-28 2011-03-15 Athenaeum, Llc Apparatus for making epitaxial film
US8746283B2 (en) 2011-10-03 2014-06-10 Aquasana, Inc. Faucet diverter valves

Also Published As

Publication number Publication date
AU4936272A (en) 1974-05-30
FR2162033A1 (cg-RX-API-DMAC10.html) 1973-07-13
GB1379414A (en) 1975-01-02
US3690965A (en) 1972-09-12
NL7215876A (cg-RX-API-DMAC10.html) 1973-06-01
DE2257834A1 (de) 1973-06-14
ES409385A1 (es) 1975-12-16
CA954421A (en) 1974-09-10
IL40925A0 (en) 1973-01-30
AU459386B2 (en) 1975-03-27

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