BE761668A - Structure de contact perfectionnee pour semi-conducteurs - Google Patents

Structure de contact perfectionnee pour semi-conducteurs

Info

Publication number
BE761668A
BE761668A BE761668A BE761668A BE761668A BE 761668 A BE761668 A BE 761668A BE 761668 A BE761668 A BE 761668A BE 761668 A BE761668 A BE 761668A BE 761668 A BE761668 A BE 761668A
Authority
BE
Belgium
Prior art keywords
semiconductors
contact structure
advanced contact
advanced
contact
Prior art date
Application number
BE761668A
Other languages
English (en)
French (fr)
Inventor
F L Katnack
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of BE761668A publication Critical patent/BE761668A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05556—Shape in side view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/147—Silicides

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
BE761668A 1970-10-29 1971-01-15 Structure de contact perfectionnee pour semi-conducteurs BE761668A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US8495870A 1970-10-29 1970-10-29

Publications (1)

Publication Number Publication Date
BE761668A true BE761668A (fr) 1971-06-16

Family

ID=22188279

Family Applications (1)

Application Number Title Priority Date Filing Date
BE761668A BE761668A (fr) 1970-10-29 1971-01-15 Structure de contact perfectionnee pour semi-conducteurs

Country Status (6)

Country Link
US (1) US3667008A (de)
JP (1) JPS5038553B1 (de)
BE (1) BE761668A (de)
DE (1) DE2101609C3 (de)
GB (1) GB1296951A (de)
YU (1) YU36420B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3135007A1 (de) * 1981-09-04 1983-03-24 Licentia Gmbh Mehrschichtenkontakt fuer eine halbleiteranordnung

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3909319A (en) * 1971-02-23 1975-09-30 Shohei Fujiwara Planar structure semiconductor device and method of making the same
DE2251727A1 (de) * 1972-10-21 1974-04-25 Licentia Gmbh Halbleiteranordnung mit mindestens zwei zonen entgegengesetzten leitfaehigkeitstyps
US4106051A (en) * 1972-11-08 1978-08-08 Ferranti Limited Semiconductor devices
GB1399163A (en) * 1972-11-08 1975-06-25 Ferranti Ltd Methods of manufacturing semiconductor devices
US3886578A (en) * 1973-02-26 1975-05-27 Multi State Devices Ltd Low ohmic resistance platinum contacts for vanadium oxide thin film devices
US3860945A (en) * 1973-03-29 1975-01-14 Rca Corp High frequency voltage-variable capacitor
US4042953A (en) * 1973-08-01 1977-08-16 Micro Power Systems, Inc. High temperature refractory metal contact assembly and multiple layer interconnect structure
US4096510A (en) * 1974-08-19 1978-06-20 Matsushita Electric Industrial Co., Ltd. Thermal printing head
US3988759A (en) * 1974-08-26 1976-10-26 Rca Corporation Thermally balanced PN junction
US4152823A (en) * 1975-06-10 1979-05-08 Micro Power Systems High temperature refractory metal contact assembly and multiple layer interconnect structure
US4127863A (en) * 1975-10-01 1978-11-28 Tokyo Shibaura Electric Co., Ltd. Gate turn-off type thyristor with separate semiconductor resistive wafer providing emitter ballast
JPS5917852B2 (ja) * 1977-02-07 1984-04-24 日本電気株式会社 半導体装置
US4265935A (en) * 1977-04-28 1981-05-05 Micro Power Systems Inc. High temperature refractory metal contact assembly and multiple layer interconnect structure
US4240097A (en) * 1977-05-31 1980-12-16 Texas Instruments Incorporated Field-effect transistor structure in multilevel polycrystalline silicon
US4234889A (en) * 1977-05-31 1980-11-18 Texas Instruments Incorporated Metal-to-moat contacts in N-channel silicon gate integrated circuits using discrete second-level polycrystalline silicon
US4209716A (en) * 1977-05-31 1980-06-24 Texas Instruments Incorporated Semiconductor integrated circuit with implanted resistor element in second-level polycrystalline silicon layer
NL190710C (nl) * 1978-02-10 1994-07-01 Nec Corp Geintegreerde halfgeleiderketen.
US4329706A (en) * 1979-03-01 1982-05-11 International Business Machines Corporation Doped polysilicon silicide semiconductor integrated circuit interconnections
JPS55138273A (en) * 1979-04-11 1980-10-28 Fujitsu Ltd Transistor
DE2926874A1 (de) * 1979-07-03 1981-01-22 Siemens Ag Verfahren zum herstellen von niederohmigen, diffundierten bereichen bei der silizium-gate-technologie
US4291322A (en) * 1979-07-30 1981-09-22 Bell Telephone Laboratories, Incorporated Structure for shallow junction MOS circuits
US4404737A (en) * 1979-11-29 1983-09-20 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing a semiconductor integrated circuit utilizing polycrystalline silicon deposition, oxidation and etching
JPS5921034A (ja) * 1982-07-27 1984-02-02 Toshiba Corp 半導体装置
US4888297A (en) * 1982-09-20 1989-12-19 International Business Machines Corporation Process for making a contact structure including polysilicon and metal alloys
EP0193934B1 (de) * 1985-03-07 1993-07-21 Kabushiki Kaisha Toshiba Integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer Herstellung
US5280188A (en) * 1985-03-07 1994-01-18 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor integrated circuit device having at least one bipolar transistor and a plurality of MOS transistors
US4794093A (en) * 1987-05-01 1988-12-27 Raytheon Company Selective backside plating of gaas monolithic microwave integrated circuits
US4949162A (en) * 1987-06-05 1990-08-14 Hitachi, Ltd. Semiconductor integrated circuit with dummy pedestals
FR2618254B1 (fr) * 1987-07-16 1990-01-05 Thomson Semiconducteurs Procede et structure de prise de contact sur des plots de circuit integre.
JP2894777B2 (ja) * 1990-03-02 1999-05-24 日本電気株式会社 半導体装置
US5355015A (en) * 1990-12-13 1994-10-11 National Semiconductor Corporation High breakdown lateral PNP transistor
US5567988A (en) * 1993-08-13 1996-10-22 Lsi Logic Corporation Integrated circuit interconnect structure with back reflection suppressing electronic "speed bumps"
DE69321966T2 (de) * 1993-12-24 1999-06-02 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania Leistungs-Halbleiterbauelement
US5798287A (en) * 1993-12-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Method for forming a power MOS device chip
DE69321965T2 (de) * 1993-12-24 1999-06-02 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania MOS-Leistungs-Chip-Typ und Packungszusammenbau
US5767546A (en) * 1994-12-30 1998-06-16 Siliconix Incorporated Laternal power mosfet having metal strap layer to reduce distributed resistance

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3504239A (en) * 1964-01-31 1970-03-31 Rca Corp Transistor with distributed resistor between emitter lead and emitter region
US3443175A (en) * 1967-03-22 1969-05-06 Rca Corp Pn-junction semiconductor with polycrystalline layer on one region
US3460007A (en) * 1967-07-03 1969-08-05 Rca Corp Semiconductor junction device
US3519901A (en) * 1968-01-29 1970-07-07 Texas Instruments Inc Bi-layer insulation structure including polycrystalline semiconductor material for integrated circuit isolation
US3559003A (en) * 1969-01-03 1971-01-26 Ibm Universal metallurgy for semiconductor materials

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3135007A1 (de) * 1981-09-04 1983-03-24 Licentia Gmbh Mehrschichtenkontakt fuer eine halbleiteranordnung

Also Published As

Publication number Publication date
DE2101609B2 (de) 1973-06-20
US3667008A (en) 1972-05-30
DE2101609C3 (de) 1974-01-10
GB1296951A (de) 1972-11-22
YU36420B (en) 1983-06-30
YU20671A (en) 1981-11-13
JPS5038553B1 (de) 1975-12-10
DE2101609A1 (de) 1972-05-04

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