BE579805A - Procédé pour le traitement de surface d'élements semi-conducteurs comportant plusieurs électrodes et au moins une jonction p-n. - Google Patents

Procédé pour le traitement de surface d'élements semi-conducteurs comportant plusieurs électrodes et au moins une jonction p-n.

Info

Publication number
BE579805A
BE579805A BE579805A BE579805A BE579805A BE 579805 A BE579805 A BE 579805A BE 579805 A BE579805 A BE 579805A BE 579805 A BE579805 A BE 579805A BE 579805 A BE579805 A BE 579805A
Authority
BE
Belgium
Prior art keywords
junction
surface treatment
semiconductor elements
several electrodes
electrodes
Prior art date
Application number
BE579805A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of BE579805A publication Critical patent/BE579805A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/12—Etching of semiconducting materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrochemistry (AREA)
  • Weting (AREA)
BE579805A 1958-06-18 1959-06-18 Procédé pour le traitement de surface d'élements semi-conducteurs comportant plusieurs électrodes et au moins une jonction p-n. BE579805A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES58641A DE1248169B (de) 1958-06-18 1958-06-18 Verfahren zur Oberflaechenbehandlung von Halbleiterbauelementen mit einem stroemenden AEtzmittel

Publications (1)

Publication Number Publication Date
BE579805A true BE579805A (fr) 1959-12-18

Family

ID=7492689

Family Applications (1)

Application Number Title Priority Date Filing Date
BE579805A BE579805A (fr) 1958-06-18 1959-06-18 Procédé pour le traitement de surface d'élements semi-conducteurs comportant plusieurs électrodes et au moins une jonction p-n.

Country Status (7)

Country Link
US (1) US3041225A (fr)
BE (1) BE579805A (fr)
CH (1) CH371522A (fr)
DE (1) DE1248169B (fr)
FR (1) FR1227736A (fr)
GB (1) GB911676A (fr)
NL (2) NL133498C (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116240547A (zh) * 2022-12-25 2023-06-09 湖北兴福电子材料股份有限公司 一种铜蚀刻液及其制备方法

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3234058A (en) * 1962-06-27 1966-02-08 Ibm Method of forming an integral masking fixture by epitaxial growth
US3489608A (en) * 1965-10-26 1970-01-13 Kulicke & Soffa Ind Inc Method and apparatus for treating semiconductor wafers
US4027686A (en) * 1973-01-02 1977-06-07 Texas Instruments Incorporated Method and apparatus for cleaning the surface of a semiconductor slice with a liquid spray of de-ionized water
US3950184A (en) * 1974-11-18 1976-04-13 Texas Instruments Incorporated Multichannel drainage system
US4161356A (en) * 1977-01-21 1979-07-17 Burchard John S Apparatus for in-situ processing of photoplates
JPS5927229B2 (ja) * 1979-09-19 1984-07-04 富士通株式会社 スピンナ−
DE3027934A1 (de) * 1980-07-23 1982-02-25 Siemens AG, 1000 Berlin und 8000 München Verfahren zur einseitigen aetzung von halbleiterscheiben
DE3114309C2 (de) * 1981-04-09 1986-01-02 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen von Infrarot-Detektorelementen
NL8403459A (nl) * 1984-11-13 1986-06-02 Philips Nv Werkwijze en inrichting voor het aanbrengen van een laag van fotogevoelig materiaal op een halfgeleiderschijf.
JPS6314434A (ja) * 1986-07-04 1988-01-21 Dainippon Screen Mfg Co Ltd 基板表面処理方法および装置
US5185056A (en) * 1991-09-13 1993-02-09 International Business Machines Corporation Method and apparatus for etching semiconductor wafers and developing resists
US5779816A (en) * 1997-01-30 1998-07-14 Trinh; Tieu T. Nozzle and system for use in wafer cleaning procedures
JP2003173999A (ja) * 2001-12-07 2003-06-20 Mitsubishi Electric Corp 半導体基板洗浄装置、半導体基板洗浄方法および半導体装置の製造方法
JP6869101B2 (ja) * 2017-05-12 2021-05-12 株式会社ダイセル 接着剤層形成装置、半導体チップ製造ライン、及び積層体の製造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2124052A (en) * 1935-07-12 1938-07-19 John L Clough Method and apparatus for washing dishes
US2178701A (en) * 1936-05-28 1939-11-07 Ralph D Petre Method for applying fluids to and cleaning articles
US2523018A (en) * 1946-12-12 1950-09-19 Paper Patents Co Method of cylinder etching and machine therefor
BE490848A (fr) * 1948-12-29
NL148598B (nl) * 1948-12-29 1900-01-01 Science Union & Cie Werkwijze voor de bereiding van een geneesmiddel, dat de neiging van de bloedplaatjes tot samenklonteren en aan elkaar plakken vermindert, en een fibrinolytische werking vertoont, een geneesmiddel met een dergelijke werking, en een werkwijze voor de bereiding van een geneeskrachtige verbinding.
US2699793A (en) * 1949-10-04 1955-01-18 Buck Centrifugal cleaner for air filters
US2758037A (en) * 1953-06-17 1956-08-07 Cahill William Starling Apparatus for and a method of applying an adhesive coating to rubber tires
NL97854C (fr) * 1954-02-23
US2705192A (en) * 1954-06-04 1955-03-29 Westinghouse Electric Corp Etching solutions and process for etching members therewith
US2767137A (en) * 1954-07-15 1956-10-16 Philco Corp Method for electrolytic etching
US2869266A (en) * 1954-10-04 1959-01-20 Turco Products Inc Method for removing metal from the surface of a metal object
US2827723A (en) * 1954-11-26 1958-03-25 Turco Products Inc Apparatus for removing metal from the surface of a metal object
US2799637A (en) * 1954-12-22 1957-07-16 Philco Corp Method for electrolytic etching
US2746848A (en) * 1955-01-19 1956-05-22 Photo Engravers Res Inc Etching
DE1072045B (de) * 1955-06-23 1959-12-24 Fhilco Corporation, Philadelphia, Pa. (V. St. A.) Verfahren und Vorrichtung zur Regelung der Flüssigkeitsströmung beim elektrolytischen Ätzen, oder Galvanisieren
US2908247A (en) * 1956-04-03 1959-10-13 Gordy Air Less Spray Company Liquid spraying apparatus
US2950990A (en) * 1957-04-08 1960-08-30 Ibm Method for applying a uniform coating to a cylindrical body

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116240547A (zh) * 2022-12-25 2023-06-09 湖北兴福电子材料股份有限公司 一种铜蚀刻液及其制备方法
CN116240547B (zh) * 2022-12-25 2024-03-12 湖北兴福电子材料股份有限公司 一种铜蚀刻液及其制备方法

Also Published As

Publication number Publication date
US3041225A (en) 1962-06-26
NL133498C (fr)
CH371522A (de) 1963-08-31
NL239732A (fr)
FR1227736A (fr) 1960-08-24
DE1248169B (de) 1967-08-24
GB911676A (en) 1962-11-28

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