NL148598B - Werkwijze voor de bereiding van een geneesmiddel, dat de neiging van de bloedplaatjes tot samenklonteren en aan elkaar plakken vermindert, en een fibrinolytische werking vertoont, een geneesmiddel met een dergelijke werking, en een werkwijze voor de bereiding van een geneeskrachtige verbinding. - Google Patents

Werkwijze voor de bereiding van een geneesmiddel, dat de neiging van de bloedplaatjes tot samenklonteren en aan elkaar plakken vermindert, en een fibrinolytische werking vertoont, een geneesmiddel met een dergelijke werking, en een werkwijze voor de bereiding van een geneeskrachtige verbinding.

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Publication number
NL148598B
NL148598B NL727201866A NL148598DA NL148598B NL 148598 B NL148598 B NL 148598B NL 727201866 A NL727201866 A NL 727201866A NL 148598D A NL148598D A NL 148598DA NL 148598 B NL148598 B NL 148598B
Authority
NL
Netherlands
Prior art keywords
preparation
activity
medicinal
medicinal product
clugging
Prior art date
Application number
NL727201866A
Other languages
English (en)
Original Assignee
Science Union & Cie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of NL148598B publication Critical patent/NL148598B/nl

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01021—Scandium [Sc]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01032—Germanium [Ge]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01077—Iridium [Ir]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01094—Plutonium [Pu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12043—Photo diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Weting (AREA)
NL727201866A 1948-12-29 Werkwijze voor de bereiding van een geneesmiddel, dat de neiging van de bloedplaatjes tot samenklonteren en aan elkaar plakken vermindert, en een fibrinolytische werking vertoont, een geneesmiddel met een dergelijke werking, en een werkwijze voor de bereiding van een geneeskrachtige verbinding. NL148598B (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US67797A US2577803A (en) 1948-12-29 1948-12-29 Manufacture of semiconductor translators

Publications (1)

Publication Number Publication Date
NL148598B true NL148598B (nl) 1900-01-01

Family

ID=22078476

Family Applications (2)

Application Number Title Priority Date Filing Date
NL727201866A NL148598B (nl) 1948-12-29 Werkwijze voor de bereiding van een geneesmiddel, dat de neiging van de bloedplaatjes tot samenklonteren en aan elkaar plakken vermindert, en een fibrinolytische werking vertoont, een geneesmiddel met een dergelijke werking, en een werkwijze voor de bereiding van een geneeskrachtige verbinding.
NL80773D NL80773C (nl) 1948-12-29

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL80773D NL80773C (nl) 1948-12-29

Country Status (4)

Country Link
US (1) US2577803A (nl)
FR (1) FR995807A (nl)
GB (1) GB694029A (nl)
NL (2) NL80773C (nl)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2663829A (en) * 1948-12-29 1953-12-22 Bell Telephone Labor Inc Semiconductor translator
NL89623C (nl) * 1949-04-01
US2675509A (en) * 1949-07-26 1954-04-13 Rca Corp High-frequency response semiconductor device
US2686279A (en) * 1949-09-28 1954-08-10 Rca Corp Semiconductor device
US2748326A (en) * 1950-03-28 1956-05-29 Sylvania Electric Prod Semiconductor translators and processing
US2666873A (en) * 1950-04-21 1954-01-19 Rca Corp High current gain semiconductor device
US2746121A (en) * 1951-10-06 1956-05-22 Bell Telephone Labor Inc Conditioning of semiconductor translators
US2755536A (en) * 1951-11-07 1956-07-24 Ibm Method of producing transistors having substantially uniform characteristics
NL173616C (nl) * 1951-11-26 Moellers Maschf E Inrichting voor het trekken van een slang van in de warmte krimpende kunststof over een stapel goederen.
US2766410A (en) * 1952-06-18 1956-10-09 Rca Corp Transistor devices
US2794917A (en) * 1953-01-27 1957-06-04 Bell Telephone Labor Inc High frequency negative resistance device
GB805292A (en) * 1953-12-02 1958-12-03 Philco Corp Semiconductor devices
US2856585A (en) * 1954-02-10 1958-10-14 Tung Sol Electric Inc Electrical measuring equipment
US2739882A (en) * 1954-02-25 1956-03-27 Raytheon Mfg Co Surface treatment of germanium
US2965521A (en) * 1954-06-10 1960-12-20 Crucible Steel Co America Metal pickling solutions and methods
US2926418A (en) * 1955-08-19 1960-03-01 Sprague Electric Co Point contact semiconductor forming method
US2947117A (en) * 1955-10-13 1960-08-02 Owens Illinois Glass Co Apparatus and method for treating interior surfaces of glass containers
US2935781A (en) * 1955-12-01 1960-05-10 Bell Telephone Labor Inc Manufacture of germanium translators
US2942329A (en) * 1956-09-25 1960-06-28 Ibm Semiconductor device fabrication
US2856275A (en) * 1956-11-20 1958-10-14 Amchem Prod Chemical treatment of refractory metal surfaces
US2941094A (en) * 1956-12-20 1960-06-14 Abraham George Electrical amplifying circuit
US2984890A (en) * 1956-12-24 1961-05-23 Gahagan Inc Crystal diode rectifier and method of making same
US2974262A (en) * 1957-06-11 1961-03-07 Abraham George Solid state device and method of making same
US2974075A (en) * 1957-10-28 1961-03-07 Bell Telephone Labor Inc Treatment of semiconductive devices
US2989671A (en) * 1958-05-23 1961-06-20 Pacific Semiconductors Inc Voltage sensitive semiconductor capacitor
NL133498C (nl) * 1958-06-18
US3058009A (en) * 1959-07-15 1962-10-09 Shockley William Trigger circuit switching from stable operation in the negative resistance region to unstable operation
US3163568A (en) * 1961-02-15 1964-12-29 Sylvania Electric Prod Method of treating semiconductor devices
US3181983A (en) * 1961-03-06 1965-05-04 Sperry Rand Corp Method for controlling the characteristic of a tunnel diode
FR2438021A1 (fr) * 1978-10-02 1980-04-30 Inst Francais Du Petrole Procede de purification d'une cetone obtenue par deshydrogenation de l'alcool correspondant
US4727318A (en) * 1984-10-04 1988-02-23 Sony/Tektronix Corporation Apparatus for measuring characteristics of electronic devices
JPH0721526B2 (ja) * 1987-08-18 1995-03-08 ソニ−・テクトロニクス株式会社 素子測定装置
US4977371A (en) * 1989-01-06 1990-12-11 Siemens Aktiengesellschaft Variable frequency I-V measurement system

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB523216A (en) * 1938-12-28 1940-07-09 Westinghouse Brake & Signal Improvements relating to the manufacture of alternating current rectifiers
US2375355A (en) * 1940-05-17 1945-05-08 Bolidens Gruv Ab Selenium rectifier
FR956778A (nl) * 1946-07-08 1950-02-07
US2497649A (en) * 1946-07-31 1950-02-14 Gen Electric Process of electroforming selenium rectifiers

Also Published As

Publication number Publication date
NL80773C (nl) 1900-01-01
FR995807A (fr) 1951-12-10
US2577803A (en) 1951-12-11
GB694029A (en) 1953-07-15

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