NL89623C - - Google Patents

Info

Publication number
NL89623C
NL89623C NL89623DA NL89623C NL 89623 C NL89623 C NL 89623C NL 89623D A NL89623D A NL 89623DA NL 89623 C NL89623 C NL 89623C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL89623C publication Critical patent/NL89623C/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrolytic Production Of Metals (AREA)
  • Amplifiers (AREA)
  • Electron Tubes For Measurement (AREA)
  • Cold Cathode And The Manufacture (AREA)
NL89623D 1949-04-01 NL89623C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8902/49A GB681809A (en) 1949-04-01 1949-04-01 Improvements in or relating to electric semi-conductors

Publications (1)

Publication Number Publication Date
NL89623C true NL89623C (nl)

Family

ID=9861517

Family Applications (1)

Application Number Title Priority Date Filing Date
NL89623D NL89623C (nl) 1949-04-01

Country Status (4)

Country Link
US (1) US2653374A (nl)
DE (1) DE874936C (nl)
GB (1) GB681809A (nl)
NL (1) NL89623C (nl)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL90092C (nl) * 1950-09-14 1900-01-01
US2740076A (en) * 1951-03-02 1956-03-27 Int Standard Electric Corp Crystal triodes
US2755536A (en) * 1951-11-07 1956-07-24 Ibm Method of producing transistors having substantially uniform characteristics
US2793332A (en) * 1953-04-14 1957-05-21 Sylvania Electric Prod Semiconductor rectifying connections and methods
DE1054591B (de) * 1955-02-04 1959-04-09 Western Electric Co Verfahren zur Feststellung der genauen Lage eines UEberganges zwischen den aneinandergrenzenden Teilen von Zonen mit entgegen-gesetztem Leitfaehigkeitstyp in einem halbleitenden Koerper
NL121810C (nl) * 1955-11-04
US2875506A (en) * 1955-12-09 1959-03-03 Ibm Method of electroforming transistors
DE1067933B (de) * 1955-12-22 1959-10-29 National Research Development Corporation, London; Vcrtr.: Dipl.-Ing. E. Schubert, Pat.-Anw., Siegen Gesteuerte Halbleiteranordnung mit zwei Elektroden. 1'9. 12. 56. Großbritannien
DE1083937B (de) * 1956-04-19 1960-06-23 Intermetall Verfahren zur Herstellung von p-n-UEbergaengen in Halbleiterkoerpern durch Legieren
US2989670A (en) * 1956-06-19 1961-06-20 Texas Instruments Inc Transistor
US2942329A (en) * 1956-09-25 1960-06-28 Ibm Semiconductor device fabrication
US2984890A (en) * 1956-12-24 1961-05-23 Gahagan Inc Crystal diode rectifier and method of making same
US2939057A (en) * 1957-05-27 1960-05-31 Teszner Stanislas Unipolar field-effect transistors
US2977515A (en) * 1958-05-07 1961-03-28 Philco Corp Semiconductor fabrication
US3156592A (en) * 1959-04-20 1964-11-10 Sprague Electric Co Microalloying method for semiconductive device
US3044147A (en) * 1959-04-21 1962-07-17 Pacific Semiconductors Inc Semiconductor technology method of contacting a body
US3046458A (en) * 1959-04-23 1962-07-24 Mc Graw Edison Co Hall plate
NL242762A (nl) * 1959-08-27
NL258378A (nl) * 1960-07-28 1900-01-01
US3403339A (en) * 1965-09-17 1968-09-24 Hewlett Packard Yokogawa Apparatus for displaying the gain factor as a function of a changing input singnal applied to an element under test

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2446467A (en) * 1944-11-11 1948-08-03 Fansteel Metallurgical Corp Dry plate rectifier
NL148598B (nl) * 1948-12-29 1900-01-01 Science Union & Cie Werkwijze voor de bereiding van een geneesmiddel, dat de neiging van de bloedplaatjes tot samenklonteren en aan elkaar plakken vermindert, en een fibrinolytische werking vertoont, een geneesmiddel met een dergelijke werking, en een werkwijze voor de bereiding van een geneeskrachtige verbinding.

Also Published As

Publication number Publication date
US2653374A (en) 1953-09-29
DE874936C (de) 1953-04-27
GB681809A (en) 1952-10-29

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