BE548647A - - Google Patents

Info

Publication number
BE548647A
BE548647A BE548647DA BE548647A BE 548647 A BE548647 A BE 548647A BE 548647D A BE548647D A BE 548647DA BE 548647 A BE548647 A BE 548647A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE548647A publication Critical patent/BE548647A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/206Electrodes for devices having potential barriers
    • H10F77/211Electrodes for devices having potential barriers for photovoltaic cells
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25BREFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
    • F25B9/00Compression machines, plants or systems, in which the refrigerant is air or other gas of low boiling point
    • F25B9/002Compression machines, plants or systems, in which the refrigerant is air or other gas of low boiling point characterised by the refrigerant
    • F25B9/006Compression machines, plants or systems, in which the refrigerant is air or other gas of low boiling point characterised by the refrigerant the refrigerant containing more than one component
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01Manufacture or treatment
    • H10D48/04Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/047Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to foundation plates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00Subject matter not provided for in other groups of this subclass
    • H10P32/141
    • H10P32/171
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00Compositions
    • Y10S252/95Doping agent source material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Thermal Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Glass Compositions (AREA)
  • Devices That Are Associated With Refrigeration Equipment (AREA)
  • Photovoltaic Devices (AREA)
  • Resistance Heating (AREA)
BE548647D 1955-06-28 BE548647A (cg-RX-API-DMAC10.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US518556A US2794846A (en) 1955-06-28 1955-06-28 Fabrication of semiconductor devices

Publications (1)

Publication Number Publication Date
BE548647A true BE548647A (cg-RX-API-DMAC10.html)

Family

ID=24064454

Family Applications (1)

Application Number Title Priority Date Filing Date
BE548647D BE548647A (cg-RX-API-DMAC10.html) 1955-06-28

Country Status (8)

Country Link
US (2) US2794322A (cg-RX-API-DMAC10.html)
JP (1) JPS321180B1 (cg-RX-API-DMAC10.html)
BE (1) BE548647A (cg-RX-API-DMAC10.html)
CH (1) CH361340A (cg-RX-API-DMAC10.html)
DE (1) DE1046785B (cg-RX-API-DMAC10.html)
FR (1) FR1154322A (cg-RX-API-DMAC10.html)
GB (1) GB816799A (cg-RX-API-DMAC10.html)
NL (2) NL207969A (cg-RX-API-DMAC10.html)

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JP5447397B2 (ja) * 2010-02-03 2014-03-19 日立化成株式会社 p型拡散層形成組成物、p型拡散層の製造方法、及び太陽電池セルの製造方法
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TWI482302B (zh) * 2010-04-23 2015-04-21 日立化成股份有限公司 形成n型擴散層的組成物、n型擴散層的製造方法及太陽電池元件的製造方法
WO2011132780A1 (ja) * 2010-04-23 2011-10-27 日立化成工業株式会社 p型拡散層形成組成物、p型拡散層の製造方法、及び太陽電池素子の製造方法
JP5541359B2 (ja) * 2010-04-23 2014-07-09 日立化成株式会社 p型拡散層形成組成物、p型拡散層の製造方法、及び太陽電池素子の製造方法
EP2562793B1 (en) 2010-04-23 2017-08-30 Hitachi Chemical Company, Ltd. METHOD FOR PRODUCING p-TYPE DIFFUSION LAYER, AND METHOD FOR PRODUCING SOLAR CELL ELEMENT
TWI483294B (zh) 2010-04-23 2015-05-01 日立化成股份有限公司 形成n型擴散層的組成物、n型擴散層的製造方法及太陽電池元件的製造方法
KR20140129375A (ko) * 2010-04-23 2014-11-06 히타치가세이가부시끼가이샤 n 형 확산층 형성 조성물, n 형 확산층의 제조 방법, 및 태양 전지 소자의 제조 방법
JP5803080B2 (ja) * 2010-09-24 2015-11-04 日立化成株式会社 p型拡散層形成組成物、p型拡散層形成組成物の製造方法、p型拡散層の製造方法、及び太陽電池セルの製造方法
CN103299399A (zh) * 2011-01-13 2013-09-11 日立化成株式会社 p型扩散层形成用组合物、p型扩散层的制造方法和太阳能电池元件的制造方法
WO2012111575A1 (ja) * 2011-02-17 2012-08-23 日立化成工業株式会社 n型拡散層形成組成物、n型拡散層の製造方法、及び太陽電池セルの製造方法
JP2012231012A (ja) * 2011-04-26 2012-11-22 Hitachi Chem Co Ltd p型拡散層形成組成物、p型拡散層の製造方法、及び太陽電池素子の製造方法
JP2012234990A (ja) * 2011-05-02 2012-11-29 Hitachi Chem Co Ltd p型拡散層形成組成物、p型拡散層の製造方法、及び太陽電池素子の製造方法
JP2012234989A (ja) * 2011-05-02 2012-11-29 Hitachi Chem Co Ltd n型拡散層形成組成物、n型拡散層の製造方法、及び太陽電池素子の製造方法
KR101541660B1 (ko) * 2011-07-19 2015-08-03 히타치가세이가부시끼가이샤 n 형 확산층 형성 조성물, n 형 확산층의 제조 방법, 및 태양 전지 소자의 제조 방법
JP2013026344A (ja) * 2011-07-19 2013-02-04 Hitachi Chem Co Ltd n型拡散層の製造方法、太陽電池素子の製造方法、および太陽電池素子
JP2013026343A (ja) * 2011-07-19 2013-02-04 Hitachi Chem Co Ltd p型拡散層の製造方法、太陽電池素子の製造方法、および太陽電池素子
JP5935254B2 (ja) * 2011-07-21 2016-06-15 日立化成株式会社 不純物拡散層形成組成物、不純物拡散層の製造方法、太陽電池素子の製造方法および太陽電池の製造方法
JP5842431B2 (ja) * 2011-07-22 2016-01-13 日立化成株式会社 n型拡散層の製造方法、及び太陽電池素子の製造方法
JP5842432B2 (ja) * 2011-07-22 2016-01-13 日立化成株式会社 p型拡散層の製造方法、及び太陽電池素子の製造方法
JP5935255B2 (ja) * 2011-07-22 2016-06-15 日立化成株式会社 インクジェット用不純物拡散層形成組成物、不純物拡散層の製造方法、太陽電池素子の製造方法及び太陽電池の製造方法
KR20150143868A (ko) * 2011-07-25 2015-12-23 히타치가세이가부시끼가이샤 반도체 기판 및 그 제조 방법, 태양 전지 소자, 그리고 태양 전지
CN104081499A (zh) * 2012-01-10 2014-10-01 日立化成株式会社 n型扩散层形成用组合物、n型扩散层形成用组合物套剂、带n型扩散层的半导体基板的制造方法、以及太阳能电池元件的制造方法
JP2015053401A (ja) * 2013-09-06 2015-03-19 日立化成株式会社 p型拡散層を有する半導体基板の製造方法、太陽電池素子の製造方法及び太陽電池素子
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FR3035740B1 (fr) * 2015-04-28 2017-05-12 Commissariat Energie Atomique Procede de fabrication d'une cellule photovoltaique.
JP2015179866A (ja) * 2015-05-25 2015-10-08 日立化成株式会社 p型拡散層形成組成物、並びに、太陽電池セルおよびその製造方法
JP2016006893A (ja) * 2015-08-03 2016-01-14 日立化成株式会社 n型拡散層形成組成物、n型拡散層の製造方法、及び太陽電池素子の製造方法
JP2016021589A (ja) * 2015-09-14 2016-02-04 日立化成株式会社 p型拡散層形成組成物、p型拡散層の製造方法、及び太陽電池素子の製造方法
JP2016027665A (ja) * 2015-09-28 2016-02-18 日立化成株式会社 p型拡散層の製造方法、及び太陽電池素子の製造方法
JP2016036034A (ja) * 2015-09-28 2016-03-17 日立化成株式会社 n型拡散層の製造方法、及び太陽電池素子の製造方法
CN106784137B (zh) * 2016-11-30 2019-07-09 浙江晶科能源有限公司 一种电池片pn结边缘隔离的装置和方法
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WO2023079957A1 (ja) * 2021-11-05 2023-05-11 東レ株式会社 p型不純物拡散組成物、それを用いた太陽電池の製造方法

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Also Published As

Publication number Publication date
GB816799A (en) 1959-07-22
FR1154322A (fr) 1958-04-04
NL207969A (cg-RX-API-DMAC10.html)
US2794846A (en) 1957-06-04
NL99619C (cg-RX-API-DMAC10.html)
US2794322A (en) 1957-06-04
JPS321180B1 (cg-RX-API-DMAC10.html) 1957-02-19
DE1046785B (de) 1958-12-18
CH361340A (fr) 1962-04-15

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