| US3125532A
              (en)
            
            * |  | 1964-03-17 |  | Method of doping semiconductor | 
        
          | US2862160A
              (en)
            
            * | 1955-10-18 | 1958-11-25 | Hoffmann Electronics Corp | Light sensitive device and method of making the same | 
        
          | CA605440A
              (en)
            
            * | 1955-11-03 | 1960-09-20 | E. Pardue Turner | Semiconductor devices and methods of making the same | 
        
          | BE556337A
              (OSRAM)
            
            * | 1956-04-03 |  |  |  | 
        
          | US2828232A
              (en)
            
            * | 1956-05-01 | 1958-03-25 | Hughes Aircraft Co | Method for producing junctions in semi-conductor device | 
        
          | US2989670A
              (en)
            
            * | 1956-06-19 | 1961-06-20 | Texas Instruments Inc | Transistor | 
        
          | US2938938A
              (en)
            
            * | 1956-07-03 | 1960-05-31 | Hoffman Electronics Corp | Photo-voltaic semiconductor apparatus or the like | 
        
          | US3129338A
              (en)
            
            * | 1957-01-30 | 1964-04-14 | Rauland Corp | Uni-junction coaxial transistor and circuitry therefor | 
        
          | BE565907A
              (OSRAM)
            
            * | 1957-03-22 |  |  |  | 
        
          | US3145328A
              (en)
            
            * | 1957-04-29 | 1964-08-18 | Raytheon Co | Methods of preventing channel formation on semiconductive bodies | 
        
          | US2962394A
              (en)
            
            * | 1957-06-20 | 1960-11-29 | Motorola Inc | Process for plating a silicon base semiconductive unit with nickel | 
        
          | US2998555A
              (en)
            
            * | 1957-07-23 | 1961-08-29 | Telefunken Gmbh | Conductor connected to the alloying area of a crystalode, e. g., a transistor of the lloy type | 
        
          | US2983591A
              (en)
            
            * | 1957-11-15 | 1961-05-09 | Texas Instruments Inc | Process and composition for etching semiconductor materials | 
        
          | US2882465A
              (en)
            
            * | 1957-12-17 | 1959-04-14 | Texas Instruments Inc | Transistor | 
        
          | NL121250C
              (OSRAM)
            
            * | 1958-01-16 |  |  |  | 
        
          | NL235479A
              (OSRAM)
            
            * | 1958-02-04 | 1900-01-01 |  |  | 
        
          | US3065392A
              (en)
            
            * | 1958-02-07 | 1962-11-20 | Rca Corp | Semiconductor devices | 
        
          | US2989424A
              (en)
            
            * | 1958-03-31 | 1961-06-20 | Westinghouse Electric Corp | Method of providing an oxide protective coating for semiconductors | 
        
          | US3016313A
              (en)
            
            * | 1958-05-15 | 1962-01-09 | Gen Electric | Semiconductor devices and methods of making the same | 
        
          | NL261580A
              (OSRAM)
            
            * | 1958-06-14 | 1900-01-01 |  |  | 
        
          | NL105824C
              (OSRAM)
            
            * | 1958-06-26 |  |  |  | 
        
          | US3019142A
              (en)
            
            * | 1958-07-25 | 1962-01-30 | Bendix Corp | Semiconductor device | 
        
          | LU37521A1
              (OSRAM)
            
            * | 1958-08-11 |  |  |  | 
        
          | US3019614A
              (en)
            
            * | 1958-09-04 | 1962-02-06 | Gen Electric | Dual temperature refrigeration | 
        
          | BE582787A
              (OSRAM)
            
            * | 1958-09-20 | 1900-01-01 |  |  | 
        
          | US3104991A
              (en)
            
            * | 1958-09-23 | 1963-09-24 | Raytheon Co | Method of preparing semiconductor material | 
        
          | US3042565A
              (en)
            
            * | 1959-01-02 | 1962-07-03 | Sprague Electric Co | Preparation of a moated mesa and related semiconducting devices | 
        
          | DE1071846B
              (OSRAM)
            
            * | 1959-01-03 | 1959-12-24 |  |  | 
        
          | GB921367A
              (en)
            
            * | 1959-04-06 | 1963-03-20 | Standard Telephones Cables Ltd | Semiconductor device and method of manufacture | 
        
          | US3070466A
              (en)
            
            * | 1959-04-30 | 1962-12-25 | Ibm | Diffusion in semiconductor material | 
        
          | US3210622A
              (en)
            
            * | 1959-09-11 | 1965-10-05 | Philips Corp | Photo-transistor | 
        
          | US3041214A
              (en)
            
            * | 1959-09-25 | 1962-06-26 | Clevite Corp | Method of forming junction semiconductive devices having thin layers | 
        
          | US3053926A
              (en)
            
            * | 1959-12-14 | 1962-09-11 | Int Rectifier Corp | Silicon photoelectric cell | 
        
          | DE1232265B
              (de)
            
            * | 1960-03-11 | 1967-01-12 | Philips Patentverwaltung | Verfahren zur Herstellung eines Legierungsdiffusionstransistors | 
        
          | NL263037A
              (OSRAM)
            
            * | 1960-03-31 |  |  |  | 
        
          | DE1133038B
              (de)
            
            * | 1960-05-10 | 1962-07-12 | Siemens Ag | Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper undvier Zonen abwechselnden Leitfaehigkeitstyps | 
        
          | US3175929A
              (en)
            
            * | 1960-05-24 | 1965-03-30 | Bell Telephone Labor Inc | Solar energy converting apparatus | 
        
          | US3141849A
              (en)
            
            * | 1960-07-04 | 1964-07-21 | Wacker Chemie Gmbh | Process for doping materials | 
        
          | US3035423A
              (en)
            
            * | 1960-07-15 | 1962-05-22 | Mendez Alfredo | Booster for refrigerating systems | 
        
          | FR1276723A
              (fr)
            
            * | 1960-10-11 | 1961-11-24 | D Electroniques Et De Physique | Perfectionnements aux procédés de fabrication de dispositifs photo-électriques semi-conducteurs et à de tels dispositifs | 
        
          | US3084079A
              (en)
            
            * | 1960-10-13 | 1963-04-02 | Pacific Semiconductors Inc | Manufacture of semiconductor devices | 
        
          | DE1156384B
              (de)
            
            * | 1960-12-23 | 1963-10-31 | Wacker Chemie Gmbh | Verfahren zum Dotieren von hochreinen Stoffen | 
        
          | US3046324A
              (en)
            
            * | 1961-01-16 | 1962-07-24 | Hoffman Electronics Corp | Alloyed photovoltaic cell and method of making the same | 
        
          | NL99556C
              (OSRAM)
            
            * | 1961-03-30 |  |  |  | 
        
          | US3081370A
              (en)
            
            * | 1961-07-17 | 1963-03-12 | Raytheon Co | Solar cells | 
        
          | DE1444521B2
              (de)
            
            * | 1962-02-01 | 1971-02-25 | Siemens AG, 1000 Berlin u 8000 München | Verfahren zur herstellung einer halbleiteranordnung | 
        
          | US3411952A
              (en)
            
            * | 1962-04-02 | 1968-11-19 | Globe Union Inc | Photovoltaic cell and solar cell panel | 
        
          | DE1211335B
              (de)
            
            * | 1962-07-16 | 1966-02-24 | Elektronik M B H | Halbleiterbauelement mit mindestens einem pn-UEbergang und mit einer Oberflaechenschicht aus Siliziumoxyd und Verfahren zum Herstellen | 
        
          | JPS4018266Y1
              (OSRAM)
            
            * | 1962-08-31 | 1965-06-28 |  |  | 
        
          | US3204321A
              (en)
            
            * | 1962-09-24 | 1965-09-07 | Philco Corp | Method of fabricating passivated mesa transistor without contamination of junctions | 
        
          | US3270255A
              (en)
            
            * | 1962-10-17 | 1966-08-30 | Hitachi Ltd | Silicon rectifying junction structures for electric power and process of production thereof | 
        
          | BE639315A
              (OSRAM)
            
            * | 1962-10-31 |  |  |  | 
        
          | DE1241468B
              (de)
            
            * | 1962-12-01 | 1967-06-01 | Andrija Fuderer Dr Ing | Kompressionsverfahren zur Kaelterzeugung | 
        
          | GB991263A
              (en)
            
            * | 1963-02-15 | 1965-05-05 | Standard Telephones Cables Ltd | Improvements in or relating to semiconductor devices | 
        
          | US3255055A
              (en)
            
            * | 1963-03-20 | 1966-06-07 | Hoffman Electronics Corp | Semiconductor device | 
        
          | US3421943A
              (en)
            
            * | 1964-02-14 | 1969-01-14 | Westinghouse Electric Corp | Solar cell panel having cell edge and base metal electrical connections | 
        
          | US3359137A
              (en)
            
            * | 1964-03-19 | 1967-12-19 | Electro Optical Systems Inc | Solar cell configuration | 
        
          | US3343049A
              (en)
            
            * | 1964-06-18 | 1967-09-19 | Ibm | Semiconductor devices and passivation thereof | 
        
          | US3401448A
              (en)
            
            * | 1964-06-22 | 1968-09-17 | Globe Union Inc | Process for making photosensitive semiconductor devices | 
        
          | US3371213A
              (en)
            
            * | 1964-06-26 | 1968-02-27 | Texas Instruments Inc | Epitaxially immersed lens and photodetectors and methods of making same | 
        
          | US3436549A
              (en)
            
            * | 1964-11-06 | 1969-04-01 | Texas Instruments Inc | P-n photocell epitaxially deposited on transparent substrate and method for making same | 
        
          | US3492174A
              (en)
            
            * | 1966-03-19 | 1970-01-27 | Sony Corp | Method of making a semiconductor device | 
        
          | US3472698A
              (en)
            
            * | 1967-05-18 | 1969-10-14 | Nasa | Silicon solar cell with cover glass bonded to cell by metal pattern | 
        
          | BE704470A
              (OSRAM)
            
            * | 1967-09-29 | 1968-03-29 |  |  | 
        
          | BE789331A
              (fr)
            
            * | 1971-09-28 | 1973-01-15 | Communications Satellite Corp | Cellule solaire a geometrie fine | 
        
          | US3872682A
              (en)
            
            * | 1974-03-18 | 1975-03-25 | Northfield Freezing Systems In | Closed system refrigeration or heat exchange | 
        
          | US3931056A
              (en)
            
            * | 1974-08-26 | 1976-01-06 | The Carborundum Company | Solid diffusion sources for phosphorus doping containing silicon and zirconium pyrophosphates | 
        
          | US4151724A
              (en)
            
            * | 1977-06-13 | 1979-05-01 | Frick Company | Pressurized refrigerant feed with recirculation for compound compression refrigeration systems | 
        
          | FR2412164A1
              (fr)
            
            * | 1977-12-13 | 1979-07-13 | Radiotechnique Compelec | Procede de creation, par serigraphie, d'un contact a la surface d'un dispositif semi-conducteur et dispositif obtenu par ce procede | 
        
          | US4217760A
              (en)
            
            * | 1978-07-20 | 1980-08-19 | General Electric Company | Vapor compression cycle device with multi-component working fluid mixture and method of modulating its capacity | 
        
          | US4218890A
              (en)
            
            * | 1978-07-24 | 1980-08-26 | General Electric Company | Vapor compression cycle device with multi-component working fluid mixture and improved condensing heat exchanger | 
        
          | US4179898A
              (en)
            
            * | 1978-07-31 | 1979-12-25 | General Electric Company | Vapor compression cycle device with multi-component working fluid mixture and method of modulating its capacity | 
        
          | US4439996A
              (en)
            
            * | 1982-01-08 | 1984-04-03 | Whirlpool Corporation | Binary refrigerant system with expansion valve control | 
        
          | US4416119A
              (en)
            
            * | 1982-01-08 | 1983-11-22 | Whirlpool Corporation | Variable capacity binary refrigerant refrigeration apparatus | 
        
          | US4416052A
              (en)
            
            * | 1982-03-29 | 1983-11-22 | General Dynamics, Convair Division | Method of making a thin-film solar cell | 
        
          | GB2130793B
              (en)
            
            * | 1982-11-22 | 1986-09-03 | Gen Electric Co Plc | Forming a doped region in a semiconductor body | 
        
          | US4580415A
              (en)
            
            * | 1983-04-22 | 1986-04-08 | Mitsubishi Denki Kabushiki Kaisha | Dual refrigerant cooling system | 
        
          | US4490192A
              (en)
            
            * | 1983-06-08 | 1984-12-25 | Allied Corporation | Stable suspensions of boron, phosphorus, antimony and arsenic dopants | 
        
          | US4913714A
              (en)
            
            * | 1987-08-03 | 1990-04-03 | Nippondenso Co., Ltd. | Automotive air conditioner | 
        
          | US5237828A
              (en)
            
            * | 1989-11-22 | 1993-08-24 | Nippondenso Co., Ltd. | Air-conditioner for an automobile with non-azeotropic refrigerant mixture used to generate "cool head" and "warm feet" profile | 
        
          | DK170189B1
              (da)
            
            * | 1990-05-30 | 1995-06-06 | Yakov Safir | Fremgangsmåde til fremstilling af halvlederkomponenter, samt solcelle fremstillet deraf | 
        
          | DE19910816A1
              (de)
            
            * | 1999-03-11 | 2000-10-05 | Merck Patent Gmbh | Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern | 
        
          | US7790574B2
              (en)
            
            * | 2004-12-20 | 2010-09-07 | Georgia Tech Research Corporation | Boron diffusion in silicon devices | 
        
          | JP4868079B1
              (ja)
            
            * | 2010-01-25 | 2012-02-01 | 日立化成工業株式会社 | n型拡散層形成組成物、n型拡散層の製造方法、及び太陽電池セルの製造方法 | 
        
          | JP5447397B2
              (ja)
            
            * | 2010-02-03 | 2014-03-19 | 日立化成株式会社 | p型拡散層形成組成物、p型拡散層の製造方法、及び太陽電池セルの製造方法 | 
        
          | US20110212564A1
              (en)
            
            * | 2010-02-05 | 2011-09-01 | Hitachi Chemical Company, Ltd. | Method for producing photovoltaic cell | 
        
          | US20110256658A1
              (en)
            
            * | 2010-02-05 | 2011-10-20 | Hitachi Chemical Company, Ltd. | Method for producing photovoltaic cell | 
        
          | JP5541358B2
              (ja)
            
            * | 2010-04-23 | 2014-07-09 | 日立化成株式会社 | n型拡散層形成組成物、n型拡散層の製造方法、及び太陽電池素子の製造方法 | 
        
          | JP5541359B2
              (ja)
            
            * | 2010-04-23 | 2014-07-09 | 日立化成株式会社 | p型拡散層形成組成物、p型拡散層の製造方法、及び太陽電池素子の製造方法 | 
        
          | WO2011132779A1
              (ja)
            
            * | 2010-04-23 | 2011-10-27 | 日立化成工業株式会社 | n型拡散層形成組成物、n型拡散層の製造方法、及び太陽電池素子の製造方法 | 
        
          | TW201624545A
              (zh)
            
            * | 2010-04-23 | 2016-07-01 | 日立化成工業股份有限公司 | 形成p型擴散層的組成物、p型擴散層的製造方法及太陽電池元件的製造方法 | 
        
          | EP2930740A1
              (en) | 2010-04-23 | 2015-10-14 | Hitachi Chemical Co., Ltd. | Composition for forming p-type diffusion layer, method of forming p-type diffusion layer, and method of producing photovoltaic cell | 
        
          | CN102870197B
              (zh)
            
            * | 2010-04-23 | 2016-10-12 | 日立化成工业株式会社 | n型扩散层形成组合物、n型扩散层的制造方法和太阳能电池元件的制造方法 | 
        
          | JP5803080B2
              (ja)
            
            * | 2010-09-24 | 2015-11-04 | 日立化成株式会社 | p型拡散層形成組成物、p型拡散層形成組成物の製造方法、p型拡散層の製造方法、及び太陽電池セルの製造方法 | 
        
          | CN103299399A
              (zh)
            
            * | 2011-01-13 | 2013-09-11 | 日立化成株式会社 | p型扩散层形成用组合物、p型扩散层的制造方法和太阳能电池元件的制造方法 | 
        
          | WO2012111575A1
              (ja)
            
            * | 2011-02-17 | 2012-08-23 | 日立化成工業株式会社 | n型拡散層形成組成物、n型拡散層の製造方法、及び太陽電池セルの製造方法 | 
        
          | JP2012231012A
              (ja)
            
            * | 2011-04-26 | 2012-11-22 | Hitachi Chem Co Ltd | p型拡散層形成組成物、p型拡散層の製造方法、及び太陽電池素子の製造方法 | 
        
          | JP2012234989A
              (ja)
            
            * | 2011-05-02 | 2012-11-29 | Hitachi Chem Co Ltd | n型拡散層形成組成物、n型拡散層の製造方法、及び太陽電池素子の製造方法 | 
        
          | JP2012234990A
              (ja)
            
            * | 2011-05-02 | 2012-11-29 | Hitachi Chem Co Ltd | p型拡散層形成組成物、p型拡散層の製造方法、及び太陽電池素子の製造方法 | 
        
          | WO2013011986A1
              (ja)
            
            * | 2011-07-19 | 2013-01-24 | 日立化成工業株式会社 | n型拡散層形成組成物、n型拡散層の製造方法、及び太陽電池素子の製造方法 | 
        
          | JP2013026343A
              (ja)
            
            * | 2011-07-19 | 2013-02-04 | Hitachi Chem Co Ltd | p型拡散層の製造方法、太陽電池素子の製造方法、および太陽電池素子 | 
        
          | JP2013026344A
              (ja)
            
            * | 2011-07-19 | 2013-02-04 | Hitachi Chem Co Ltd | n型拡散層の製造方法、太陽電池素子の製造方法、および太陽電池素子 | 
        
          | JP5935254B2
              (ja)
            
            * | 2011-07-21 | 2016-06-15 | 日立化成株式会社 | 不純物拡散層形成組成物、不純物拡散層の製造方法、太陽電池素子の製造方法および太陽電池の製造方法 | 
        
          | JP5842432B2
              (ja)
            
            * | 2011-07-22 | 2016-01-13 | 日立化成株式会社 | p型拡散層の製造方法、及び太陽電池素子の製造方法 | 
        
          | JP5935255B2
              (ja)
            
            * | 2011-07-22 | 2016-06-15 | 日立化成株式会社 | インクジェット用不純物拡散層形成組成物、不純物拡散層の製造方法、太陽電池素子の製造方法及び太陽電池の製造方法 | 
        
          | JP5842431B2
              (ja)
            
            * | 2011-07-22 | 2016-01-13 | 日立化成株式会社 | n型拡散層の製造方法、及び太陽電池素子の製造方法 | 
        
          | US20130025670A1
              (en)
            
            * | 2011-07-25 | 2013-01-31 | Hitachi Chemical Company, Ltd. | Semiconductor substrate and method for producing the same, photovoltaic cell element, and photovoltaic cell | 
        
          | TW201331991A
              (zh)
            
            * | 2012-01-10 | 2013-08-01 | Hitachi Chemical Co Ltd | n型擴散層形成組成物、n型擴散層形成組成物套組、帶有n型擴散層的半導體基板的製造方法以及太陽電池元件的製造方法 | 
        
          | JP2015053401A
              (ja)
            
            * | 2013-09-06 | 2015-03-19 | 日立化成株式会社 | p型拡散層を有する半導体基板の製造方法、太陽電池素子の製造方法及び太陽電池素子 | 
        
          | US20150107294A1
              (en)
            
            * | 2013-10-22 | 2015-04-23 | Panasonic Intellectual Property Management Co., Ltd. | Refrigeration-cycle equipment | 
        
          | FR3035740B1
              (fr)
            
            * | 2015-04-28 | 2017-05-12 | Commissariat Energie Atomique | Procede de fabrication d'une cellule photovoltaique. | 
        
          | JP2015179866A
              (ja)
            
            * | 2015-05-25 | 2015-10-08 | 日立化成株式会社 | p型拡散層形成組成物、並びに、太陽電池セルおよびその製造方法 | 
        
          | JP2016006893A
              (ja)
            
            * | 2015-08-03 | 2016-01-14 | 日立化成株式会社 | n型拡散層形成組成物、n型拡散層の製造方法、及び太陽電池素子の製造方法 | 
        
          | JP2016021589A
              (ja)
            
            * | 2015-09-14 | 2016-02-04 | 日立化成株式会社 | p型拡散層形成組成物、p型拡散層の製造方法、及び太陽電池素子の製造方法 | 
        
          | JP2016036034A
              (ja)
            
            * | 2015-09-28 | 2016-03-17 | 日立化成株式会社 | n型拡散層の製造方法、及び太陽電池素子の製造方法 | 
        
          | JP2016027665A
              (ja)
            
            * | 2015-09-28 | 2016-02-18 | 日立化成株式会社 | p型拡散層の製造方法、及び太陽電池素子の製造方法 | 
        
          | CN106784137B
              (zh)
            
            * | 2016-11-30 | 2019-07-09 | 浙江晶科能源有限公司 | 一种电池片pn结边缘隔离的装置和方法 | 
        
          | WO2018208308A1
              (en)
            
            * | 2017-05-11 | 2018-11-15 | General Electric Company | Cooling systems and related method | 
        
          | CN118202443A
              (zh)
            
            * | 2021-11-05 | 2024-06-14 | 东丽株式会社 | p型杂质扩散组合物、使用其的太阳能电池的制造方法 |