AU3745689A - Process for plasma depositing silicon nitride and silicon dioxide films onto a substrate - Google Patents

Process for plasma depositing silicon nitride and silicon dioxide films onto a substrate

Info

Publication number
AU3745689A
AU3745689A AU37456/89A AU3745689A AU3745689A AU 3745689 A AU3745689 A AU 3745689A AU 37456/89 A AU37456/89 A AU 37456/89A AU 3745689 A AU3745689 A AU 3745689A AU 3745689 A AU3745689 A AU 3745689A
Authority
AU
Australia
Prior art keywords
substrate
dioxide films
films onto
silicon nitride
silicon dioxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU37456/89A
Other languages
English (en)
Inventor
Thomas S. Dory
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Olin Corp
Original Assignee
Olin Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Olin Corp filed Critical Olin Corp
Publication of AU3745689A publication Critical patent/AU3745689A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
AU37456/89A 1988-05-31 1989-05-22 Process for plasma depositing silicon nitride and silicon dioxide films onto a substrate Abandoned AU3745689A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US200202 1988-05-31
US07/200,202 US4877641A (en) 1988-05-31 1988-05-31 Process for plasma depositing silicon nitride and silicon dioxide films onto a substrate

Publications (1)

Publication Number Publication Date
AU3745689A true AU3745689A (en) 1990-01-12

Family

ID=22740733

Family Applications (1)

Application Number Title Priority Date Filing Date
AU37456/89A Abandoned AU3745689A (en) 1988-05-31 1989-05-22 Process for plasma depositing silicon nitride and silicon dioxide films onto a substrate

Country Status (6)

Country Link
US (1) US4877641A (ja)
EP (1) EP0417170B1 (ja)
JP (1) JPH03504617A (ja)
KR (1) KR900701035A (ja)
AU (1) AU3745689A (ja)
WO (1) WO1989012507A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU606715B2 (en) * 1987-07-15 1991-02-14 Valmet General Limited Method of plasma enhanced silicon oxide deposition

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US5053255A (en) * 1990-07-13 1991-10-01 Olin Corporation Chemical vapor deposition (CVD) process for the thermally depositing silicon carbide films onto a substrate
US5061514A (en) * 1990-07-13 1991-10-29 Olin Corporation Chemical vapor deposition (CVD) process for plasma depositing silicon carbide films onto a substrate
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JPH04332115A (ja) * 1991-05-02 1992-11-19 Shin Etsu Chem Co Ltd Ｘ線リソグラフィ−マスク用ｘ線透過膜
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DE4202652C2 (de) * 1992-01-30 1996-03-28 Fraunhofer Ges Forschung Verfahren zum Aufbringen einer UV- und/oder elektronenstrahlempfindlichen Lackschicht
US5880036A (en) 1992-06-15 1999-03-09 Micron Technology, Inc. Method for enhancing oxide to nitride selectivity through the use of independent heat control
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DE4232390A1 (de) * 1992-09-26 1994-03-31 Roehm Gmbh Verfahren zum Erzeugen von siliciumoxidischen kratzfesten Schichten auf Kunststoffen durch Plasmabeschichtung
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US5305344A (en) * 1993-04-29 1994-04-19 Opto Power Corporation Laser diode array
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JP2899600B2 (ja) * 1994-01-25 1999-06-02 キヤノン販売 株式会社 成膜方法
US5736423A (en) * 1995-11-16 1998-04-07 Advanced Micro Devices, Inc. Method for depositing very thin PECVD SiO2 in 0.5 micron and 0.35 micron technologies
US6127261A (en) * 1995-11-16 2000-10-03 Advanced Micro Devices, Inc. Method of fabricating an integrated circuit including a tri-layer pre-metal interlayer dielectric compatible with advanced CMOS technologies
US5968324A (en) * 1995-12-05 1999-10-19 Applied Materials, Inc. Method and apparatus for depositing antireflective coating
WO1997022136A1 (de) * 1995-12-08 1997-06-19 Balzers Aktiengesellschaft Hf-plasmabehandlungskammer bzw. pecvd-beschichtungskammer, deren verwendungen und verfahren zur beschichtung von speicherplatten
KR100267418B1 (ko) * 1995-12-28 2000-10-16 엔도 마코토 플라스마처리방법및플라스마처리장치
US5976993A (en) * 1996-03-28 1999-11-02 Applied Materials, Inc. Method for reducing the intrinsic stress of high density plasma films
US5898211A (en) * 1996-04-30 1999-04-27 Cutting Edge Optronics, Inc. Laser diode package with heat sink
US6013155A (en) * 1996-06-28 2000-01-11 Lam Research Corporation Gas injection system for plasma processing
US6127262A (en) 1996-06-28 2000-10-03 Applied Materials, Inc. Method and apparatus for depositing an etch stop layer
EP0958401B1 (en) 1996-06-28 2004-09-08 Lam Research Corporation Apparatus and method for high density plasma chemical vapor deposition or etching
US6083569A (en) * 1996-10-25 2000-07-04 Applied Materials, Inc. Discharging a wafer after a plasma process for dielectric deposition
US6562544B1 (en) 1996-11-04 2003-05-13 Applied Materials, Inc. Method and apparatus for improving accuracy in photolithographic processing of substrates
US6184158B1 (en) 1996-12-23 2001-02-06 Lam Research Corporation Inductively coupled plasma CVD
US6042687A (en) * 1997-06-30 2000-03-28 Lam Research Corporation Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing
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US5913108A (en) * 1998-04-30 1999-06-15 Cutting Edge Optronics, Inc. Laser diode packaging
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US6636538B1 (en) * 1999-03-29 2003-10-21 Cutting Edge Optronics, Inc. Laser diode packaging
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US6509217B1 (en) 1999-10-22 2003-01-21 Damoder Reddy Inexpensive, reliable, planar RFID tag structure and method for making same
US6700913B2 (en) 2001-05-29 2004-03-02 Northrop Grumman Corporation Low cost high integrity diode laser array
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US6777308B2 (en) * 2002-05-17 2004-08-17 Micron Technology, Inc. Method of improving HDP fill process
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JP2006024670A (ja) * 2004-07-07 2006-01-26 Sony Corp 半導体装置の製造方法
JP4961111B2 (ja) * 2005-02-28 2012-06-27 富士フイルム株式会社 光電変換膜積層型固体撮像素子とその製造方法
US7305016B2 (en) 2005-03-10 2007-12-04 Northrop Grumman Corporation Laser diode package with an internal fluid cooling channel
KR20070102764A (ko) * 2006-04-17 2007-10-22 주식회사 엘지화학 Ｐｅｃｖｄ 법에 기반한 다층 박막 구조의 제조방법
US7656915B2 (en) * 2006-07-26 2010-02-02 Northrop Grumman Space & Missions Systems Corp. Microchannel cooler for high efficiency laser diode heat extraction
US20080056314A1 (en) * 2006-08-31 2008-03-06 Northrop Grumman Corporation High-power laser-diode package system
JP2009138210A (ja) * 2007-12-04 2009-06-25 Sony Corp 成膜装置および成膜方法ならびに発光装置の製造方法
KR100962044B1 (ko) * 2007-12-06 2010-06-08 성균관대학교산학협력단 저유전 플라즈마 중합체 박막 및 그 제조 방법
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JP2009263731A (ja) * 2008-04-25 2009-11-12 Fujifilm Corp 成膜方法及び装置
US8345720B2 (en) 2009-07-28 2013-01-01 Northrop Grumman Systems Corp. Laser diode ceramic cooler having circuitry for control and feedback of laser diode performance
US9590388B2 (en) 2011-01-11 2017-03-07 Northrop Grumman Systems Corp. Microchannel cooler for a single laser diode emitter based system
US8586487B2 (en) * 2012-01-18 2013-11-19 Applied Materials, Inc. Low temperature plasma enhanced chemical vapor deposition of conformal silicon carbon nitride and silicon nitride films
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU606715B2 (en) * 1987-07-15 1991-02-14 Valmet General Limited Method of plasma enhanced silicon oxide deposition

Also Published As

Publication number Publication date
EP0417170A1 (en) 1991-03-20
US4877641A (en) 1989-10-31
KR900701035A (ko) 1990-08-17
EP0417170B1 (en) 1993-01-07
WO1989012507A1 (en) 1989-12-28
EP0417170A4 (en) 1991-06-26
JPH03504617A (ja) 1991-10-09

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