AU3745689A - Process for plasma depositing silicon nitride and silicon dioxide films onto a substrate - Google Patents
Process for plasma depositing silicon nitride and silicon dioxide films onto a substrateInfo
- Publication number
- AU3745689A AU3745689A AU37456/89A AU3745689A AU3745689A AU 3745689 A AU3745689 A AU 3745689A AU 37456/89 A AU37456/89 A AU 37456/89A AU 3745689 A AU3745689 A AU 3745689A AU 3745689 A AU3745689 A AU 3745689A
- Authority
- AU
- Australia
- Prior art keywords
- substrate
- dioxide films
- films onto
- silicon nitride
- silicon dioxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title 2
- 229910052581 Si3N4 Inorganic materials 0.000 title 1
- 238000000151 deposition Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 235000012239 silicon dioxide Nutrition 0.000 title 1
- 239000000377 silicon dioxide Substances 0.000 title 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US200202 | 1988-05-31 | ||
US07/200,202 US4877641A (en) | 1988-05-31 | 1988-05-31 | Process for plasma depositing silicon nitride and silicon dioxide films onto a substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
AU3745689A true AU3745689A (en) | 1990-01-12 |
Family
ID=22740733
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU37456/89A Abandoned AU3745689A (en) | 1988-05-31 | 1989-05-22 | Process for plasma depositing silicon nitride and silicon dioxide films onto a substrate |
Country Status (6)
Country | Link |
---|---|
US (1) | US4877641A (ja) |
EP (1) | EP0417170B1 (ja) |
JP (1) | JPH03504617A (ja) |
KR (1) | KR900701035A (ja) |
AU (1) | AU3745689A (ja) |
WO (1) | WO1989012507A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU606715B2 (en) * | 1987-07-15 | 1991-02-14 | Valmet General Limited | Method of plasma enhanced silicon oxide deposition |
Families Citing this family (62)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5316639A (en) * | 1989-06-05 | 1994-05-31 | Sachiko Okazaki | Dielectric material used for an ozone generator and a method of forming a film to the dielectric material |
JPH0740569B2 (ja) * | 1990-02-27 | 1995-05-01 | エイ・ティ・アンド・ティ・コーポレーション | Ecrプラズマ堆積方法 |
JP2814009B2 (ja) * | 1990-06-05 | 1998-10-22 | 三菱電機株式会社 | 半導体装置の製造方法 |
US5053255A (en) * | 1990-07-13 | 1991-10-01 | Olin Corporation | Chemical vapor deposition (CVD) process for the thermally depositing silicon carbide films onto a substrate |
US5061514A (en) * | 1990-07-13 | 1991-10-29 | Olin Corporation | Chemical vapor deposition (CVD) process for plasma depositing silicon carbide films onto a substrate |
US5120680A (en) * | 1990-07-19 | 1992-06-09 | At&T Bell Laboratories | Method for depositing dielectric layers |
EP0469791A1 (en) * | 1990-08-02 | 1992-02-05 | AT&T Corp. | Soluble oxides for integrated circuits |
JPH04332115A (ja) * | 1991-05-02 | 1992-11-19 | Shin Etsu Chem Co Ltd | X線リソグラフィ−マスク用x線透過膜 |
WO1992020833A1 (en) | 1991-05-17 | 1992-11-26 | Lam Research Corporation | A PROCESS FOR DEPOSITING A SIOx FILM HAVING REDUCED INTRINSIC STRESS AND/OR REDUCED HYDROGEN CONTENT |
US5525550A (en) * | 1991-05-21 | 1996-06-11 | Fujitsu Limited | Process for forming thin films by plasma CVD for use in the production of semiconductor devices |
US5204138A (en) * | 1991-12-24 | 1993-04-20 | International Business Machines Corporation | Plasma enhanced CVD process for fluorinated silicon nitride films |
DE4202652C2 (de) * | 1992-01-30 | 1996-03-28 | Fraunhofer Ges Forschung | Verfahren zum Aufbringen einer UV- und/oder elektronenstrahlempfindlichen Lackschicht |
US5880036A (en) | 1992-06-15 | 1999-03-09 | Micron Technology, Inc. | Method for enhancing oxide to nitride selectivity through the use of independent heat control |
US5286344A (en) * | 1992-06-15 | 1994-02-15 | Micron Technology, Inc. | Process for selectively etching a layer of silicon dioxide on an underlying stop layer of silicon nitride |
DE4232390A1 (de) * | 1992-09-26 | 1994-03-31 | Roehm Gmbh | Verfahren zum Erzeugen von siliciumoxidischen kratzfesten Schichten auf Kunststoffen durch Plasmabeschichtung |
JP2875945B2 (ja) * | 1993-01-28 | 1999-03-31 | アプライド マテリアルズ インコーポレイテッド | Cvdにより大面積のガラス基板上に高堆積速度でシリコン窒化薄膜を堆積する方法 |
US5344792A (en) * | 1993-03-04 | 1994-09-06 | Micron Technology, Inc. | Pulsed plasma enhanced CVD of metal silicide conductive films such as TiSi2 |
US5305344A (en) * | 1993-04-29 | 1994-04-19 | Opto Power Corporation | Laser diode array |
US5382550A (en) * | 1993-08-05 | 1995-01-17 | Micron Semiconductor, Inc. | Method of depositing SiO2 on a semiconductor substrate |
JP2899600B2 (ja) * | 1994-01-25 | 1999-06-02 | キヤノン販売 株式会社 | 成膜方法 |
US5736423A (en) * | 1995-11-16 | 1998-04-07 | Advanced Micro Devices, Inc. | Method for depositing very thin PECVD SiO2 in 0.5 micron and 0.35 micron technologies |
US6127261A (en) * | 1995-11-16 | 2000-10-03 | Advanced Micro Devices, Inc. | Method of fabricating an integrated circuit including a tri-layer pre-metal interlayer dielectric compatible with advanced CMOS technologies |
US5968324A (en) * | 1995-12-05 | 1999-10-19 | Applied Materials, Inc. | Method and apparatus for depositing antireflective coating |
WO1997022136A1 (de) * | 1995-12-08 | 1997-06-19 | Balzers Aktiengesellschaft | Hf-plasmabehandlungskammer bzw. pecvd-beschichtungskammer, deren verwendungen und verfahren zur beschichtung von speicherplatten |
KR100267418B1 (ko) * | 1995-12-28 | 2000-10-16 | 엔도 마코토 | 플라스마처리방법및플라스마처리장치 |
US5976993A (en) * | 1996-03-28 | 1999-11-02 | Applied Materials, Inc. | Method for reducing the intrinsic stress of high density plasma films |
US5898211A (en) * | 1996-04-30 | 1999-04-27 | Cutting Edge Optronics, Inc. | Laser diode package with heat sink |
US6013155A (en) * | 1996-06-28 | 2000-01-11 | Lam Research Corporation | Gas injection system for plasma processing |
US6127262A (en) | 1996-06-28 | 2000-10-03 | Applied Materials, Inc. | Method and apparatus for depositing an etch stop layer |
EP0958401B1 (en) | 1996-06-28 | 2004-09-08 | Lam Research Corporation | Apparatus and method for high density plasma chemical vapor deposition or etching |
US6083569A (en) * | 1996-10-25 | 2000-07-04 | Applied Materials, Inc. | Discharging a wafer after a plasma process for dielectric deposition |
US6562544B1 (en) | 1996-11-04 | 2003-05-13 | Applied Materials, Inc. | Method and apparatus for improving accuracy in photolithographic processing of substrates |
US6184158B1 (en) | 1996-12-23 | 2001-02-06 | Lam Research Corporation | Inductively coupled plasma CVD |
US6042687A (en) * | 1997-06-30 | 2000-03-28 | Lam Research Corporation | Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing |
TW344859B (en) * | 1997-09-23 | 1998-11-11 | United Microelectronics Corp | Method for increasing the etching rate of silicon-oxy-nitride |
US5913108A (en) * | 1998-04-30 | 1999-06-15 | Cutting Edge Optronics, Inc. | Laser diode packaging |
US6417041B1 (en) * | 1999-03-26 | 2002-07-09 | Advanced Micro Devices, Inc. | Method for fabricating high permitivity dielectric stacks having low buffer oxide |
US6636538B1 (en) * | 1999-03-29 | 2003-10-21 | Cutting Edge Optronics, Inc. | Laser diode packaging |
US6368988B1 (en) | 1999-07-16 | 2002-04-09 | Micron Technology, Inc. | Combined gate cap or digit line and spacer deposition using HDP |
US6509217B1 (en) | 1999-10-22 | 2003-01-21 | Damoder Reddy | Inexpensive, reliable, planar RFID tag structure and method for making same |
US6700913B2 (en) | 2001-05-29 | 2004-03-02 | Northrop Grumman Corporation | Low cost high integrity diode laser array |
EP1351321B1 (en) * | 2002-04-01 | 2013-12-25 | Konica Corporation | Support and organic electroluminescence element comprising the support |
US6777308B2 (en) * | 2002-05-17 | 2004-08-17 | Micron Technology, Inc. | Method of improving HDP fill process |
JP2004193585A (ja) * | 2002-11-29 | 2004-07-08 | Fujitsu Ltd | 半導体装置の製造方法と半導体装置 |
JP2006024670A (ja) * | 2004-07-07 | 2006-01-26 | Sony Corp | 半導体装置の製造方法 |
JP4961111B2 (ja) * | 2005-02-28 | 2012-06-27 | 富士フイルム株式会社 | 光電変換膜積層型固体撮像素子とその製造方法 |
US7305016B2 (en) | 2005-03-10 | 2007-12-04 | Northrop Grumman Corporation | Laser diode package with an internal fluid cooling channel |
KR20070102764A (ko) * | 2006-04-17 | 2007-10-22 | 주식회사 엘지화학 | Pecvd 법에 기반한 다층 박막 구조의 제조방법 |
US7656915B2 (en) * | 2006-07-26 | 2010-02-02 | Northrop Grumman Space & Missions Systems Corp. | Microchannel cooler for high efficiency laser diode heat extraction |
US20080056314A1 (en) * | 2006-08-31 | 2008-03-06 | Northrop Grumman Corporation | High-power laser-diode package system |
JP2009138210A (ja) * | 2007-12-04 | 2009-06-25 | Sony Corp | 成膜装置および成膜方法ならびに発光装置の製造方法 |
KR100962044B1 (ko) * | 2007-12-06 | 2010-06-08 | 성균관대학교산학협력단 | 저유전 플라즈마 중합체 박막 및 그 제조 방법 |
US7724791B2 (en) * | 2008-01-18 | 2010-05-25 | Northrop Grumman Systems Corporation | Method of manufacturing laser diode packages and arrays |
JP2009263731A (ja) * | 2008-04-25 | 2009-11-12 | Fujifilm Corp | 成膜方法及び装置 |
US8345720B2 (en) | 2009-07-28 | 2013-01-01 | Northrop Grumman Systems Corp. | Laser diode ceramic cooler having circuitry for control and feedback of laser diode performance |
US9590388B2 (en) | 2011-01-11 | 2017-03-07 | Northrop Grumman Systems Corp. | Microchannel cooler for a single laser diode emitter based system |
US8586487B2 (en) * | 2012-01-18 | 2013-11-19 | Applied Materials, Inc. | Low temperature plasma enhanced chemical vapor deposition of conformal silicon carbon nitride and silicon nitride films |
US8937976B2 (en) | 2012-08-15 | 2015-01-20 | Northrop Grumman Systems Corp. | Tunable system for generating an optical pulse based on a double-pass semiconductor optical amplifier |
US10047614B2 (en) | 2014-10-09 | 2018-08-14 | Rolls-Royce Corporation | Coating system including alternating layers of amorphous silica and amorphous silicon nitride |
US10280770B2 (en) | 2014-10-09 | 2019-05-07 | Rolls-Royce Corporation | Coating system including oxide nanoparticles in oxide matrix |
US9748093B2 (en) | 2015-03-18 | 2017-08-29 | Applied Materials, Inc. | Pulsed nitride encapsulation |
US9646818B2 (en) | 2015-03-23 | 2017-05-09 | Applied Materials, Inc. | Method of forming planar carbon layer by applying plasma power to a combination of hydrocarbon precursor and hydrogen-containing precursor |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3540926A (en) * | 1968-10-09 | 1970-11-17 | Gen Electric | Nitride insulating films deposited by reactive evaporation |
US4279947A (en) * | 1975-11-25 | 1981-07-21 | Motorola, Inc. | Deposition of silicon nitride |
US4142004A (en) * | 1976-01-22 | 1979-02-27 | Bell Telephone Laboratories, Incorporated | Method of coating semiconductor substrates |
US4158717A (en) * | 1977-02-14 | 1979-06-19 | Varian Associates, Inc. | Silicon nitride film and method of deposition |
US4500483A (en) * | 1982-03-19 | 1985-02-19 | United Technologies Corporation | Manufacture of hollow CVD silicon nitride articles |
US4681653A (en) * | 1984-06-01 | 1987-07-21 | Texas Instruments Incorporated | Planarized dielectric deposited using plasma enhanced chemical vapor deposition |
US4702936A (en) * | 1984-09-20 | 1987-10-27 | Applied Materials Japan, Inc. | Gas-phase growth process |
JPS61117841A (ja) * | 1984-11-14 | 1986-06-05 | Hitachi Ltd | シリコン窒化膜の形成方法 |
US4657777A (en) * | 1984-12-17 | 1987-04-14 | Canon Kabushiki Kaisha | Formation of deposited film |
US4696834A (en) * | 1986-02-28 | 1987-09-29 | Dow Corning Corporation | Silicon-containing coatings and a method for their preparation |
US4720395A (en) * | 1986-08-25 | 1988-01-19 | Anicon, Inc. | Low temperature silicon nitride CVD process |
-
1988
- 1988-05-31 US US07/200,202 patent/US4877641A/en not_active Expired - Fee Related
-
1989
- 1989-05-22 AU AU37456/89A patent/AU3745689A/en not_active Abandoned
- 1989-05-22 EP EP89906620A patent/EP0417170B1/en not_active Expired - Lifetime
- 1989-05-22 JP JP1506378A patent/JPH03504617A/ja active Pending
- 1989-05-22 KR KR1019890702098A patent/KR900701035A/ko active IP Right Grant
- 1989-05-22 WO PCT/US1989/002227 patent/WO1989012507A1/en active IP Right Grant
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU606715B2 (en) * | 1987-07-15 | 1991-02-14 | Valmet General Limited | Method of plasma enhanced silicon oxide deposition |
Also Published As
Publication number | Publication date |
---|---|
EP0417170A1 (en) | 1991-03-20 |
US4877641A (en) | 1989-10-31 |
KR900701035A (ko) | 1990-08-17 |
EP0417170B1 (en) | 1993-01-07 |
WO1989012507A1 (en) | 1989-12-28 |
EP0417170A4 (en) | 1991-06-26 |
JPH03504617A (ja) | 1991-10-09 |
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