AU2014301912B2 - High-power LED lamp cooling device and manufacturing method therefor - Google Patents
High-power LED lamp cooling device and manufacturing method therefor Download PDFInfo
- Publication number
- AU2014301912B2 AU2014301912B2 AU2014301912A AU2014301912A AU2014301912B2 AU 2014301912 B2 AU2014301912 B2 AU 2014301912B2 AU 2014301912 A AU2014301912 A AU 2014301912A AU 2014301912 A AU2014301912 A AU 2014301912A AU 2014301912 B2 AU2014301912 B2 AU 2014301912B2
- Authority
- AU
- Australia
- Prior art keywords
- type semiconductor
- semiconductor elements
- led lamp
- semiconductor element
- power led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/51—Cooling arrangements using condensation or evaporation of a fluid, e.g. heat pipes
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/51—Cooling arrangements using condensation or evaporation of a fluid, e.g. heat pipes
- F21V29/52—Cooling arrangements using condensation or evaporation of a fluid, e.g. heat pipes electrically powered, e.g. refrigeration systems
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/54—Cooling arrangements using thermoelectric means, e.g. Peltier elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/645—Heat extraction or cooling elements the elements being electrically controlled, e.g. Peltier elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
Abstract
Disclosed are a high-power LED lamp cooling device and a manufacturing method therefor. The method comprises: manufacturing a semiconductor crystal bar used for manufacturing N-type semiconductor elements or P-type semiconductor elements in advance into a cone-shaped crystal bar of which one end has a large diameter and the other end has a small diameter, and then making a colour mark on each wafer as the large-diameter end surface of the tail end when the cone-shaped semiconductor crystal bar is cut into slices; and cutting and pelletizing the conical surface of each wafer to obtain polygonal cylindrical N-type semiconductor elements or P-type semiconductor elements, arranging the N-type semiconductor elements and the P-type semiconductor elements in a matrix form between two beryllium-oxide ceramic chips which are provided with conductive circuits, and connecting the head end of each column of N-type semiconductor elements to the tail end of the P-type semiconductor elements in series mutually, so as to manufacture a high-power LED lamp cooling device. The high-power LED lamp cooling device can realize the technical effects of having a good cooling effect, high work efficiency and low energy consumption and being capable of reducing the light failure of an LED lamp, and prolonging the service life of the high-power LED lamp.
Description
HIGH-POWER LED LAMP COOLING DEVICE AND METHOD FOR MANUFACTURING THE SAME
TECHNICAL FIELD
[0001] The present invention relates to a high-power LED lamp cooling device and a method for manufacturing the same, which belongs to the field of heat-dissipating and cooling technology for a high-power LED lamp.
BACKGROUND
[0002] The light-emitting efficiency of an LED lamp not only depends on quality of LED lamp bulb, but more importantly also depends on the temperature of the LED lamp during operation, especially when a high-power LED lamp is in operation, once the temperature is above 55°C, the light-emitting efficiency thereof reduces by about 2% for each degree increase in temperature, and therefore, cooling treatment is very important when an LED lamp, especially a high-power LED lamp is in operation. In the prior art, the high-power LED lamp is usually cooled by air cooling or with a semiconductor cooling device. The feature, that different temperatures are generated at a hot end and a cold end of a P-type semiconductor element and an N-type semiconductor element while being energized, has been widely applied in the field of manufacturing a semiconductor cooling or heating device. Currently, when the N-type or P-type semiconductor elements are used to manufacture a cooling device, directions of the N-type or P-type semiconductor elements are always not taken into account, that is, when the N-type or P-type semiconductor elements are connected, the head end and the tail end of the N-type or P-type semiconductor elements are not distinguished, but arbitrary ends of the N-type or P-type semiconductor elements are connected mutually, such a mode of connection irrespective of the head end and the tail end not only reduces working efficiency of the semiconductor element, increases energy consumption, but also makes the manufactured cooling device fail to reach a required cooling temperature. Generally speaking, in terms of the cooling device manufactured with the traditional method, the temperature difference between the hot end and the cold end thereof only can reach about 60 degrees. Accordingly, the effect of usage of the existing P-type semiconductor elements and N-type semiconductor elements for manufacturing a cooling device, especially a high-power LED lamp cooling device is less than desired.
SUMMARY
[0003] In order to overcome or at least ameliorate one or more of the defects in the prior art, an embodiment of the present invention seeks to provide a high-power LED lamp cooling device and a method for manufacturing the same, which is featured by a better cooling effect, higher working efficiency and lower energy consumption.
[0004] Alternatively or additionally, an embodiment of the present invention seeks to at least provide the public with a useful choice.
[0005] The present invention are implemented as follows: in the method for manufacturing a high-power LED lamp cooling device made of N-type semiconductor elements or P-type semiconductor elements, when the N-type semiconductor elements or the P-type semiconductor elements are used to manufacture the high-power LED lamp cooling device, manufacturing a semiconductor crystal bar used for manufacturing N-type semiconductor elements or P-type semiconductor elements in advance into a cone-shaped crystal bar of which one end has a large diameter and the other end has a small diameter, cutting the cone-shaped semiconductor crystal bar into slices to obtain wafers with the same thickness, the small-diameter end of the wafer being the head end the large-diameter end being the tail end, and then making a color mark on the tail end surface of each wafer; and then cutting and pelletizing the conical surface of each wafer to the same polygonal cylindrical shape, the polygonal cylindrical semiconductor is the N-type semiconductor elements or the P-type semiconductor elements with a head end and a tail end, arranging the N-type semiconductor elements and the P-type semiconductor elements in a matrix form between two beryllium-oxide ceramic chips which are provided with conductive circuits, and connecting each column of N-type semiconductor elements to the P-type semiconductor elements in series mutually, so that the head end of each column of N-type semiconductor elements in series is connected to the tail end of the P-type semiconductor elements or the tail end of each column of N-type semiconductor elements is connected to the head end of the P-type semiconductor elements.
[0006] The polygonal cylinder may be a quadrangular, or square, or regular hexagonal, or regular octagonal, or regular decagonal or regular dodecagonal cylinder.
[0007] A high-power LED lamp cooling device constructed according to the above method, includes: N-type semiconductor elements and P-type semiconductor elements arranged in a matrix form between an upper beryllium-oxide ceramic wafer and a lower beryllium-oxide ceramic wafer which are provided with conductive circuits, an end of both the N-type semiconductor and the P-type semiconductor is provided with a conductive color mark, the end with the color mark is regarded as the tail end of the N-type semiconductor element or the P-type semiconductor element, the end without the color mark is regarded as the head end of the N-type semiconductor element or the P-type semiconductor element, each column of N-type semiconductor element and each column of P-type semiconductor element are connected in series respectively through an upper conductive plate provided on the upper beryllium-oxide ceramic wafer and through a lower conductive plate provided on the lower beryllium-oxide ceramic wafer, and the head end of each column of N-type semiconductor element is connected with the tail end of each column of P-type semiconductor element or the tail end of each column of N-type semiconductor element is connected with the head end of each column of P-type semiconductor element, each column of N-type semiconductor element and each column of P-type semiconductor element are connected with a direct current power source through a conductive wire on the upper conductive plate or the lower conductive plate provided at two outmost ends of the column; wherein, a beryllium copper plate pressing block is attached on an upper surface of the upper beryllium-oxide ceramic wafer, a heat dissipating aluminum base is mounted on the beryllium copper plate pressing block, a bottom surface of the lower beryllium-oxide ceramic wafer is attached with a heat-conducting uniform temperature plate, through a graphene thermal conductive grease layer, the heat-conducting uniform temperature plate is provided with a high-power LED lamp circuit which is mounted with the LED bulb, and both ends of the heat-conducting uniform temperature plate are connected to the aluminum base with screws, respectively.
[0008] The aluminum base may be provided with a thermal pipe mounting hole for mounting a thermal conductive pipe of the heat sink.
[0009] The heat-conducting uniform temperature plate may be a printed circuit board for mounting a high power LED lamp circuit of an LED bulb.
[0010] Due to the above technical solution, based on the conventional manufacturing of N-type semiconductor element and P-type semiconductor element, the semiconductor crystal bar is made with a color mark after being cut, so that the head end and tail end of the N-type semiconductor element or the P-type semiconductor element can be distinguished in a convenient way, and the arranging orientation of the head end or tail end is in consistent with that of the crystal bar before being cut. In this way, when the semiconductor element in the present invention is used, it is easy to distinguish the tail end and the head end, thus avoiding the occurrence of disordered connection when the N-type semiconductor element is connected in the prior art due to the undistinguishable head end and tail end. When the N-type or P-type semiconductor elements in the present invention are used to manufacture a cooling device, orderly connection in a head-to-tail sequence can be achieved in a convenient way, thereby effectively improving working efficiency of each N-type or P-type semiconductor element, as well as a cooling effect of the entire cooling device. Through a test, when the high-power LED lamp cooling device manufactured according to the present invention is adopted, the temperature difference between the cold end and the hot end thereof reaches about 73°C to 78°C, when the cooling device according to the present invention is mounted to a high-power LED lamp of 200W for use, it can be ensured that the circuit board of the high-power LED lamp can be stabilized under 45°C for a long time, thus effectively improving working efficiency of the high-power LED lamp and prolonging the service life of the high-power LED lamp. Therefore, as compared with the prior art, the present invention not only has a good cooling effect, a high working efficiency and a low energy consumption, but is also capable of reducing the light failure of a high power LED lamp, and prolonging the service life of the high-power LED lamp.
[0011] In the description in this specification reference may be made to subject matter which is not within the scope of the appended claims. That subject matter should be readily identifiable by a person skilled in the art and may assist in putting into practice the invention as defined in the presently appended claims.
BRIEF DESCRIPTION OF THE DRAWINGS
[0012] FIG. 1 is a structural schematic diagram of the present invention.
[0013] Reference signs: 1-Aluminum base, 2-Thermal pipe mounting hole, 3-Beryllium copper plate pressing block, 4-Upper beryllium-oxide ceramic wafer, 5-Upper conductive plate, 6-N-type semiconductor element, 7-P-type semiconductor element, 8-Lower conductive plate, 9-Lower beryllium-oxide ceramic wafer, 10-Graphene thermal conductive grease layer, 11-Heat-conducting uniform temperature plate, 12-Conductive wire, 13-Screw.
DESCRIPTION OF EMBODIMENTS
[0014] The present invention is described below in further detail, by way of non-limiting example only, with reference to accompanying drawing and the embodiments.
[0015] The embodiments are as follows: in the method for manufacturing a high-power LED lamp cooling device made of N-type semiconductor elements or P-type semiconductor elements, when the N-type semiconductor elements or the P-type semiconductor elements are used to manufacture the high-power LED lamp cooling device using a traditional process, manufacturing a semiconductor crystal bar used for manufacturing N-type semiconductor elements or P-type semiconductor elements into a cone-shaped crystal bar in advance, of which one end has a large diameter and the other end has a small diameter, cutting the cone-shaped semiconductor crystal bar into slices to obtain wafers with the same thickness, the small-diameter end of the wafer being the head end the large-diameter end being the tail end, and then making a color mark on the tail end surface of each wafer with colors made of conductive materials (for example, color materials made of conductive materials, such as copper, aluminium or silver); and then cutting and pelletizing the conical surface of each wafer to the same polygonal cylinder shape, the polygonal cylinder can be made as a quadrangular, square, regular hexagonal, regular octagonal, regular decagonal or regular dodecagonal cylinder according to needs of use, the manufactured semiconductor with polygonal cylinder shape is the N-type semiconductor elements or the P-type semiconductor elements with a head end and a tail end; arranging the N-type semiconductor elements and the P-type semiconductor elements in a traditional matrix form between two beryllium-oxide ceramic chips which are provided with conductive circuits, and connecting each column of N-type semiconductor elements to the P-type semiconductor elements in series mutually, so that the head end of each column of N-type semiconductor elements in series can be connected to the tail end of the P-type semiconductor elements or the tail end of each column of N-type semiconductor elements can be connected to the head end of the P-type semiconductor elements.
[0016] The structural schematic diagram of the high-power LED lamp cooling device constructed according to the above method is as shown in FIG. 1, and the cooling device includes: N-type semiconductor elements 6 and P-type semiconductor elements 7 arranged, in a matrix form, between an upper beryllium-oxide ceramic wafer 4 and a lower beryllium-oxide ceramic wafer 9 which are provided with conductive circuits, an end of both the N-type semiconductor 6 and the P-type semiconductor 7 is provided with a conductive color mark, the end with the color mark is regarded as the tail end of the N-type semiconductor element 6 or of the P-type semiconductor element 7, the end without the color mark is regarded as the head end of the N-type semiconductor element 6 or of the P-type semiconductor element 7, each column of N-type semiconductor element 6 and each column of P-type semiconductor element 7 are connected in series respectively through an upper conductive plate 5 provided on the upper beryllium-oxide ceramic wafer 4 and through a lower conductive plate 8 provided on the lower beryllium-oxide ceramic wafer 9, and the head end of each column of N-type semiconductor element 6 is connected with the tail end of each column of P-type semiconductor element 7 or the tail end of each column of N-type semiconductor element 6 is connected with the head end of each column of P-type semiconductor element 7, each column of N-type semiconductor element 6 and each column of P-type semiconductor element 7 are connected with the direct current power source through a conductive wire 12 on the upper conductive plate 5 or the lower conductive plate 8 provided at two outmost ends of the column (as shown in FIG. 1); during manufacturing, a beryllium copper plate pressing block 3 is attached on the upper surface of the upper beryllium-oxide ceramic wafer 4, a heat dissipating aluminum base 1 is mounted on the beryllium copper plate pressing block 3, and meanwhile, the aluminum base 1 is manufactured with a thermal pipe mounting hole 2 for mounting a thermal conductive pipe of the heat sink; the bottom surface of the lower beryllium-oxide ceramic wafer 9 is attached with a heat-conducting uniform temperature plate 11, through a graphene thermal conductive grease layer 10, the heat-conducting uniform temperature plate 11 is manufactured with a high-power LED lamp circuit which is mounted with an LED bulb according to a traditional high-power LED lamp circuit, and the heat-conducting uniform temperature plate 11 also can directly adopt the existing printed circuit board for mounting a high power LED lamp circuit of an LED bulb; and finally both ends of the heat-conducting uniform temperature plate 11 are connected to the aluminum base 1 with screws 13, respectively.
[0017] When using the high-power LED lamp cooling device according to the present invention, it is only necessary to mount the device within a high-power LED lamp housing, mount the LED bulb on the heat-conducting uniform temperature plate 11, meanwhile clamp the thermal conductive pipe of the heat sink into the thermal pipe mounting hole 2 of the aluminum base 1, and connect power lines on the conductive wire 12 and the heat-conducting unifonn temperature plate 11 respectively with the direct current power source.
[0018] The term ‘comprising’ as used in this specification and claims means ‘consisting at least in part of’. When interpreting statements in this specification and claims which include the term ‘comprising’, other features besides the features prefaced by this term in each statement can also be present. Related terms such as ‘comprise’ and ‘comprised’ are to be interpreted in similar' manner.
[0019] In this specification where reference has been made to patent specifications, other external documents, or other sources of information, this is generally for the purpose of providing a context for discussing the features of the invention. Unless specifically stated otherwise, reference to such external documents is not to be construed as an admission that such documents, or such sources of information, in any jurisdiction, are prior art, or form part of the common general knowledge in the art.
Claims (5)
- CLAIMS What is claimed is:1. A method for manufacturing a high-power LED lamp cooling device, comprising using an N-type semiconductor element and a P-type semiconductor element as a cooling component of the high-power LED lamp cooling device, and comprising: when the N-type semiconductor element and the P-type semiconductor element are used as cooling component of the high-power LED lamp cooling device, manufacturing a semiconductor crystal bar used for manufacturing the N-type semiconductor elements or the P-type semiconductor elements in advance into a cone-shaped crystal bar, of which one end has a large diameter and the other end has a small diameter, cutting the cone-shaped semiconductor crystal bar into slices to obtain wafers with the same thickness, the small-diameter end of the wafer being the head end and the large-diameter end being the tail end, and then making a color mark on the tail end surface of each wafer; and then cutting and pelletizing the conical surface of each wafer to the same polygonal cylindrical shape, the polygonal cylindrical semiconductor is the N-type semiconductor elements or the P-type semiconductor elements with a head end and a tail end, arranging the N-type semiconductor elements and the P-type semiconductor elements in a matrix form between two beryllium-oxide ceramic chips which are provided with conductive circuits, and connecting each column of N-type semiconductor elements to the P-type semiconductor elements in series mutually, so that the head end of each column of N-type semiconductor elements in series is connected to the tail end of the P-type semiconductor elements or the tail end of each column of N-type semiconductor elements is connected to the head end of the P-type semiconductor elements.
- 2. The method for manufacturing a high-power LED lamp cooling device according to claim 1, wherein, the polygonal cylinder is a quadrangular, or square, or regular hexagonal, or regular octagonal, or regular decagonal or regular dodecagonal cylinder.
- 3. A high-power LED lamp cooling device, comprising: N-type semiconductor elements and P-type semiconductor elements arranged in a matrix form between an upper beryllium-oxide ceramic wafer and a lower beryllium-oxide ceramic wafer which are provided with conductive circuits, wherein, an end of both the N-type semiconductor and the P-type semiconductor is provided with a conductive color mark, the end with the color mark is regarded as the tail end of the N-type semiconductor element or the P-type semiconductor element, the end without the color mark is regarded as the head end of the N-type semiconductor element or the P-type semiconductor element, each column of N-type semiconductor element and each column of P-type semiconductor element are connected in series respectively through an upper conductive plate provided on the upper beryllium-oxide ceramic wafer and through a lower conductive plate provided on the lower beryllium-oxide ceramic wafer, and the head end of each column of N-type semiconductor element is connected with the tail end of each column of P-type semiconductor element or the tail end of each column of N-type semiconductor element is connected with the head end of each column of P-type semiconductor element, each column of N-type semiconductor element and each column of P-type semiconductor element are connected with a direct current power source through a conductive wire on the upper conductive plate or the lower conductive plate provided at two outmost ends of the column; wherein, a beryllium copper plate pressing block is attached on an upper surface of the upper beryllium-oxide ceramic wafer, a heat dissipating aluminum base is mounted on the beryllium copper plate pressing block, a bottom surface of the lower beryllium-oxide ceramic wafer is attached with a heat-conducting uniform temperature plate, through a graphene thermal conductive grease layer, the heat-conducting uniform temperature plate is provided with a high-power LED lamp circuit which is mounted with the LED bulb, and both ends of the heat-conducting uniform temperature plate are connected to the aluminum base with screws, respectively.
- 4. The high-power LED lamp cooling device according to claim 3, wherein, the aluminum base is manufactured with a thermal pipe mounting hole for mounting a thermal conductive pipe of the heat sink.
- 5. The high-power LED lamp cooling device according to claim 3, wherein, the heat-conducting uniform temperature plate is a printed circuit board for mounting a high power LED lamp circuit of an LED bulb.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310257924.5 | 2013-06-25 | ||
CN201310257924.5A CN103353098B (en) | 2013-06-25 | 2013-06-25 | A kind of high-powered LED lamp cooling device and preparation method thereof |
PCT/CN2014/078443 WO2014206166A1 (en) | 2013-06-25 | 2014-05-26 | High-power led lamp cooling device and manufacturing method therefor |
Publications (2)
Publication Number | Publication Date |
---|---|
AU2014301912A1 AU2014301912A1 (en) | 2016-02-11 |
AU2014301912B2 true AU2014301912B2 (en) | 2017-10-19 |
Family
ID=49309494
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2014301912A Active AU2014301912B2 (en) | 2013-06-25 | 2014-05-26 | High-power LED lamp cooling device and manufacturing method therefor |
Country Status (7)
Country | Link |
---|---|
US (1) | US9412925B2 (en) |
EP (1) | EP3015765B1 (en) |
JP (1) | JP6151449B2 (en) |
CN (1) | CN103353098B (en) |
AU (1) | AU2014301912B2 (en) |
DK (1) | DK3015765T3 (en) |
WO (1) | WO2014206166A1 (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103353098B (en) | 2013-06-25 | 2015-09-23 | 陈志明 | A kind of high-powered LED lamp cooling device and preparation method thereof |
CN103779288A (en) * | 2014-01-18 | 2014-05-07 | 西安交通大学 | Serial-parallel coupler-in-emulsion semiconductor refrigeration module based on double power supplies |
CN105376971A (en) * | 2015-10-08 | 2016-03-02 | 京东方科技集团股份有限公司 | A shell of a mobile electronic apparatus and a mobile electronic apparatus |
CN105202800A (en) * | 2015-10-24 | 2015-12-30 | 唐玉敏 | Semiconductor cooling and heating chip |
JP7151068B2 (en) * | 2016-12-26 | 2022-10-12 | 三菱マテリアル株式会社 | Thermoelectric conversion module with case |
US11616185B2 (en) * | 2017-06-01 | 2023-03-28 | Qualcomm Incorporated | Energy harvesting device for electronic devices |
US20190178486A1 (en) * | 2017-12-13 | 2019-06-13 | Wei Chen | Module for led lighting fixture |
CN111726934B (en) * | 2020-07-02 | 2022-11-11 | 西安电子科技大学芜湖研究院 | Heat dissipation drive plate utilizing semiconductor for cooling |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100127299A1 (en) * | 2008-11-25 | 2010-05-27 | Cooper Technologies Company | Actively Cooled LED Lighting System and Method for Making the Same |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0770856B2 (en) * | 1989-02-27 | 1995-07-31 | 太陽誘電株式会社 | Position detection method for hybrid integrated circuit board |
US5209786A (en) * | 1990-10-09 | 1993-05-11 | Thermo Electron Technologies Corporation | Integrity-enhanced thermoelectrics |
JP3465879B2 (en) * | 1999-02-23 | 2003-11-10 | オリオン機械株式会社 | Manufacturing method of thermoelectric conversion module |
JP2002076451A (en) * | 2000-09-04 | 2002-03-15 | Eco Twenty One:Kk | Thermoelectric transducing element and its manufacture |
JP2004335499A (en) * | 2003-04-30 | 2004-11-25 | Yamaha Corp | Thermoelectric material and its manufacturing method |
CN100397671C (en) * | 2003-10-29 | 2008-06-25 | 京瓷株式会社 | Thermoelectric inverting model |
EP1704752A4 (en) * | 2003-12-11 | 2009-09-23 | Philips Solid State Lighting | Thermal management methods and apparatus for lighting devices |
JP4385891B2 (en) * | 2004-08-18 | 2009-12-16 | ソニー株式会社 | Display device |
JP2007066696A (en) * | 2005-08-31 | 2007-03-15 | Matsushita Electric Ind Co Ltd | Lighting system |
US8143769B2 (en) * | 2008-09-08 | 2012-03-27 | Intematix Corporation | Light emitting diode (LED) lighting device |
US8809820B2 (en) * | 2010-01-27 | 2014-08-19 | Heraeus Noblelight Fusion Uv Inc. | Micro-channel-cooled high heat load light emitting device |
US8931933B2 (en) * | 2010-03-03 | 2015-01-13 | Cree, Inc. | LED lamp with active cooling element |
KR101055095B1 (en) * | 2010-03-09 | 2011-08-08 | 엘지이노텍 주식회사 | Light emitting device |
US8807799B2 (en) * | 2010-06-11 | 2014-08-19 | Intematix Corporation | LED-based lamps |
KR101822600B1 (en) * | 2010-07-29 | 2018-01-26 | 엘지이노텍 주식회사 | Led lighting apparatus comprising led module embedded thermoelectric cooling module |
CN201819471U (en) * | 2010-10-15 | 2011-05-04 | 常山县万谷电子科技有限公司 | High power refrigeration piece |
US9068701B2 (en) * | 2012-01-26 | 2015-06-30 | Cree, Inc. | Lamp structure with remote LED light source |
US9234655B2 (en) * | 2011-02-07 | 2016-01-12 | Cree, Inc. | Lamp with remote LED light source and heat dissipating elements |
US9103540B2 (en) * | 2011-04-21 | 2015-08-11 | Optalite Technologies, Inc. | High efficiency LED lighting system with thermal diffusion |
CN102297544A (en) * | 2011-08-26 | 2011-12-28 | 陈志明 | Semiconductor refrigerating or heating module and production method thereof |
US20130088848A1 (en) * | 2011-10-06 | 2013-04-11 | Intematix Corporation | Solid-state lamps with improved radial emission and thermal performance |
US8992051B2 (en) * | 2011-10-06 | 2015-03-31 | Intematix Corporation | Solid-state lamps with improved radial emission and thermal performance |
CN202521346U (en) * | 2012-04-24 | 2012-11-07 | 山西吉天利半导体照明有限公司 | Light emitting diode (LED) light source module cooled by adopting semiconductor cooler |
CN102810620A (en) * | 2012-07-13 | 2012-12-05 | 重庆绿色科技开发有限公司 | Light emitting diode (LED) encapsulated by adopting semiconductor refrigeration plate as support |
CN203336546U (en) * | 2013-06-25 | 2013-12-11 | 陈志明 | High-power LED lamp cooling device |
CN203336367U (en) * | 2013-06-25 | 2013-12-11 | 陈志明 | Low-light-failure and high-power LED street lamp |
CN103398358B (en) * | 2013-06-25 | 2015-10-21 | 陈志明 | A kind of low light attenuation high-power LED street lamp and preparation method thereof |
CN103353098B (en) * | 2013-06-25 | 2015-09-23 | 陈志明 | A kind of high-powered LED lamp cooling device and preparation method thereof |
-
2013
- 2013-06-25 CN CN201310257924.5A patent/CN103353098B/en active Active
-
2014
- 2014-05-26 EP EP14818281.9A patent/EP3015765B1/en active Active
- 2014-05-26 AU AU2014301912A patent/AU2014301912B2/en active Active
- 2014-05-26 WO PCT/CN2014/078443 patent/WO2014206166A1/en active Application Filing
- 2014-05-26 DK DK14818281.9T patent/DK3015765T3/en active
- 2014-05-26 JP JP2016522205A patent/JP6151449B2/en active Active
-
2015
- 2015-12-24 US US14/998,284 patent/US9412925B2/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100127299A1 (en) * | 2008-11-25 | 2010-05-27 | Cooper Technologies Company | Actively Cooled LED Lighting System and Method for Making the Same |
Also Published As
Publication number | Publication date |
---|---|
EP3015765A4 (en) | 2016-06-29 |
CN103353098A (en) | 2013-10-16 |
EP3015765B1 (en) | 2018-08-08 |
AU2014301912A1 (en) | 2016-02-11 |
EP3015765A1 (en) | 2016-05-04 |
CN103353098B (en) | 2015-09-23 |
US9412925B2 (en) | 2016-08-09 |
JP2016530674A (en) | 2016-09-29 |
DK3015765T3 (en) | 2018-11-26 |
JP6151449B2 (en) | 2017-06-21 |
WO2014206166A1 (en) | 2014-12-31 |
US20160133811A1 (en) | 2016-05-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
AU2014301912B2 (en) | High-power LED lamp cooling device and manufacturing method therefor | |
AU2014301911B2 (en) | Low light failure, high-power led street lamp and method for manufacturing the same | |
CN103939870A (en) | Cooling fin suitable for high-power LED lamp heat radiator | |
Cheng | Thermal management of high-power white LED package | |
CN203336367U (en) | Low-light-failure and high-power LED street lamp | |
CN102878455B (en) | Intelligent semiconductor heat radiating LED (light-emitting diode) lamp | |
CN203336546U (en) | High-power LED lamp cooling device | |
TW201429009A (en) | Light emitting diode device and a method for manufacturing heat dissipating substrate | |
CN204227383U (en) | A kind of high-powered LED lamp cooling device | |
CN202955502U (en) | Light emitting diode (LED) lamp with glass fiber board as heat conduction substrate | |
CN203297992U (en) | LED bulb lamp emitting light by 360 degrees | |
CN202647316U (en) | LED (Light Emitting Diode) illuminating lamp of compound heat radiation substrate | |
CN206918666U (en) | A kind of energy-saving LED lamp bead | |
TWM341162U (en) | Improvement on heat dissipation module for LED lamp | |
CN207018896U (en) | A kind of aluminium nitride substrate for Projecting Lamp | |
CN206724112U (en) | A kind of LED radiator | |
CN203273820U (en) | Light emitting diode (LED) light source | |
CN204005420U (en) | A kind of LED lamp | |
CN203812918U (en) | Concave-type all-metal composite substrate in flip package main heat-dissipation channel | |
CN203718713U (en) | LED lamp | |
CN201628123U (en) | Energy-saving LED lamp bulb | |
CN100520153C (en) | Method for producing light-alltenuation proof high-power semiconductor lighting lamp | |
CN103939772A (en) | LED photoelectricity-heat integrated module lamp | |
CN203297990U (en) | Low-temperature high lighting efficiency LED daylight lamp | |
CN203147707U (en) | Ceramic heat radiator for LED lamp |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
DA3 | Amendments made section 104 |
Free format text: THE NATURE OF THE AMENDMENT IS: AMEND THE INVENTION TITLE TO READ HIGH-POWER LED LAMP COOLING DEVICE AND MANUFACTURING METHOD THEREFOR |
|
FGA | Letters patent sealed or granted (standard patent) |