CN203812918U - Concave-type all-metal composite substrate in flip package main heat-dissipation channel - Google Patents

Abstract

A concave-type all-metal composite substrate in a flip package main heat-dissipation channel is composed of a P pole fixedly-connecting plate and a copper base plate, wherein the P pole fixedly-connecting plate is used for fixedly connecting the P poles of LED chips; the middle part of the copper base plate is provided with a P pole fixedly-connecting plate embedding gap; and the P pole fixedly-connecting plate used for fixedly connecting the P poles of the LED chips is a copper plate or copper-coated ceramic plate which is embedded in the P pole fixedly-connecting plate embedding gap formed in the middle of the copper base plate. When the substrate is used, the P pole fixedly-connecting plate fixedly connects the P poles of all the LED chips, and the copper base plate surfaces respectively located in the two sides of the P pole fixedly-connecting plate fixedly connect the N poles of a part of the LED chips. The copper base plate fixedly connected with the N poles of the LED chips is excellent in heat conduction performance and is also provided with a junction face which is connected with the N poles of the LED chips and is suitable for the size of the chip heat dissipation task undertaken by the N poles of the LED chips, so that the heat conduction rate for heat dissipation of the packaged LED chips is almost the heat conduction rate of copper and the heat dissipation effect is excellent. The substrate of the utility model can fully satisfy the requirement of heat dissipation in the cases of package of multiple large-power LED chips and intensive usage of a large number of LED chips.

Description

The compound substrate of the main heat dissipation channel drop centre type of flip-chip packaged all-metal

Technical field

The utility model relates to a kind of LED chip base plate for packaging, particularly the compound substrate of the main heat dissipation channel drop centre type of a kind of flip-chip packaged all-metal.

Background technology

Semiconductor light-emitting-diode LED is a kind of novel solid luminescent device, since being born, it is with power saving, life-span is long, environmental protection, vibration resistance, the characteristic that fast response time etc. are intrinsic, be widely used in indicator light, signal lamp, display screen, the fields such as Landscape Lighting, but due to luminance difference, all the time affect its application to the extremely high efficiency lighting source market expansion, trace it to its cause is because LED can emit a large amount of heat in the process of work, and the raising along with power, the heat meeting sharp increase of emitting, make tube core junction temperature increase rapidly, it is large that thermal resistance becomes, thereby have influence on the performance of device, thereby concerning LED device, scientifically by heat radiation, reduce thermal resistance and junction temperature is most important, for this reason, people have soundd out various means, but effect is all undesirable, nowadays the heat radiation of LED has become an important technology difficult problem that hinders its application extension.

LED chip has dividing of positive cartridge chip and flip-chip, and its base plate for packaging also has supports that the resin substrate of the following LED of 0.5W and the metal system of the above LED of support 0.5W and pottery are that substrate is other.Adopting metal is the positive cartridge chip of great power LED of substrate package, take and adopts aluminum substrate as example, the thermally conductive pathways of (as shown in Figure 1) after encapsulation: PN junction → Sapphire Substrate → aluminium base Copper Foil → dielectric → aluminium base; Adopting metal is the high power LED flip-chip of substrate package, take and adopts aluminum substrate as example, the thermally conductive pathways of (as shown in Figure 2) after encapsulation: PN junction → aluminium base Copper Foil → dielectric → aluminium base, due to the pyroconductivity of link (W/mK) wherein:

Therefore no matter be positive cartridge chip, or flip-chip, the pyroconductivity of the LED chip heat radiation after encapsulation can not surpass 1～2W/mK.

Adopting pottery is the positive cartridge chip of great power LED of substrate package, take and adopts aluminum nitride ceramic substrate as example, the thermally conductive pathways of (as shown in Figure 3) after encapsulation: PN junction → Sapphire Substrate → aluminum nitride ceramic substrate Copper Foil → aluminum nitride ceramic substrate; Adopting pottery is the high power LED flip-chip of substrate package, the employing aluminum nitride ceramic substrate of take is example, the thermally conductive pathways of (as shown in Figure 4) after encapsulation: PN junction → aluminum nitride ceramic substrate Copper Foil → aluminum nitride ceramic substrate, due to the pyroconductivity of link (W/mK) wherein:

Sapphire Substrate 42

Copper Foil 388

Aluminum nitride ceramic substrate 200

After encapsulation, the pyroconductivity of formal dress chip cooling can not surpass 42W/mK, and the pyroconductivity of flip-chip heat radiation can not surpass 200W/mK.

But LED chip, its heat radiation is also not only relevant with the encapsulating material of selecting, also relevant with the composition surface size of encapsulating material with chip.We are through studying and find for a long time: the N utmost point of LED chip and the P utmost point have huge outer engagement face difference, and Area Ratio is up to 6～9 ︰ 1; The LED chip of upside-down mounting, the N utmost point is being born the main heat radiation task of LED chip, yet this feature with LED chip that the substrate affixed LED chip N utmost point that present LED chip flip-chip packaged is used and the Copper Foil size of the P utmost point but do not design adapts, cause LED chip heat radiation to be obstructed, also do not reach due radiating effect.

Summary of the invention

Technical problem to be solved in the utility model is the deficiency that overcomes above-mentioned existing LED chip base plate for packaging, and provides a kind of flip-chip packaged of LED chip main heat dissipation channel drop centre type all-metal compound substrate.

The technical scheme in the invention for solving the technical problem is: the compound substrate of the main heat dissipation channel drop centre type of a kind of flip-chip packaged all-metal, the copper base that it has the extremely affixed plate setting-in of P breach by an extremely affixed plate of the P for the affixed LED chip P utmost point and centre forms, the extremely affixed plate of its P for the affixed LED chip P utmost point is copper coin, is inlaid in the extremely affixed plate setting-in of the P breach of offering in the middle of copper base with high heat conductive insulating glue; Or cover copper ceramic wafer, with golden WU alloy welding, be inlaid in the extremely affixed plate setting-in of the P breach of offering in the middle of copper base.

The compound substrate of this flip-chip packaged provided by the utility model main heat dissipation channel drop centre type all-metal, during use with the P utmost point of affixed each LED chip of the extremely affixed plate of P, to divide the N utmost point of each the affixed a part of LED chip of copper base surface in the extremely affixed plate of P both sides, because the copper base of the affixed LED chip N utmost point has outstanding heat-conductive characteristic and has again the composition surface that is connected each LED chip N utmost point that the chip cooling task size born with each LED chip N utmost point adapts, thereby the pyroconductivity of the LED chip of encapsulation heat radiation is close to the pyroconductivity of copper, effect is splendid, can fully meet the heat radiation requirement of a plurality of high-power LED chip packages and a large amount of intensive uses of LED chip.

Accompanying drawing explanation

Fig. 1 is for adopting the schematic diagram of the great power LED formal dress chip cooling structure of aluminum substrate encapsulation;

Fig. 2 is for adopting the schematic diagram of the high power LED flip-chip radiator structure of aluminum substrate encapsulation;

Fig. 3 is for adopting the schematic diagram of the great power LED formal dress chip cooling structure of aluminum nitride ceramic substrate encapsulation;

Fig. 4 is for adopting the schematic diagram of the high power LED flip-chip radiator structure of aluminum nitride ceramic substrate encapsulation;

Fig. 5 is for adopting the structural representation of the compound substrate package high-power LED chip of flip-chip packaged provided by the utility model main heat dissipation channel drop centre type all-metal;

Fig. 6 is for adopting the electrical schematic diagram of the compound substrate package high-power LED chip of flip-chip packaged provided by the utility model main heat dissipation channel drop centre type all-metal;

Mark in figure: 1---LED chip, 11---the N utmost point, 12---the P utmost point, 13---PN junction, 14---Sapphire Substrate, 21---Copper Foil, 22---dielectric, 23---substrate, 31---copper base, 32---the extremely affixed plate of P, 33---high heat conductive insulating glue or golden WU alloy.

Embodiment

With reference to accompanying drawing 5～6, the utility model provides the main heat dissipation channel drop centre type of a kind of flip-chip packaged all-metal compound substrate, and the copper base 31 that it has the extremely affixed plate setting-in of P breach by an extremely affixed plate 32 of the P for the affixed LED chip P utmost point and centre forms.

Embodiment 1, the compound substrate of the main heat dissipation channel drop centre type of above-mentioned flip-chip packaged all-metal, the extremely affixed plate 32 of its P for the affixed LED chip P utmost point is copper coins, with ST0903 heat conduction bonded adhesives (high heat conductive insulating glue), pastes and is inlaid in the extremely affixed plate setting-in of the P breach of offering in the middle of copper base 31.

Embodiment 2, the compound substrate of the main heat dissipation channel drop centre type of above-mentioned flip-chip packaged all-metal, the extremely affixed plate 32 of its P for the affixed LED chip P utmost point is to cover copper alumina ceramic plate or cover copper al nitride ceramic board, with golden WU alloy welding, is inlaid in the extremely affixed plate setting-in of the P breach of offering in the middle of copper base 31.

Claims (3)

1. the compound substrate of the main heat dissipation channel drop centre type of flip-chip packaged all-metal, it is characterized in that: the copper base (31) that it has the extremely affixed plate setting-in of P breach by an extremely affixed plate of the P for the affixed LED chip P utmost point (32) and centre forms, its extremely affixed plate of P for the affixed LED chip P utmost point (32) is copper coin, is inlaid in the extremely affixed plate setting-in of the P breach of offering in the middle of copper base (31) with high heat conductive insulating glue; Or cover copper ceramic wafer, with golden WU alloy welding, be inlaid in the extremely affixed plate setting-in of the P breach of offering in the middle of copper base (31).

2. the compound substrate of the main heat dissipation channel drop centre type of flip-chip packaged according to claim 1 all-metal, is characterized in that: its extremely affixed plate of P for the affixed LED chip P utmost point (32) is to cover copper alumina ceramic plate.

3. the compound substrate of the main heat dissipation channel drop centre type of flip-chip packaged according to claim 1 all-metal, is characterized in that: its extremely affixed plate of P for the affixed LED chip P utmost point (32) is to cover copper al nitride ceramic board.