AU2013289151A1 - High efficiency solar cell structures and manufacturing methods - Google Patents
High efficiency solar cell structures and manufacturing methods Download PDFInfo
- Publication number
- AU2013289151A1 AU2013289151A1 AU2013289151A AU2013289151A AU2013289151A1 AU 2013289151 A1 AU2013289151 A1 AU 2013289151A1 AU 2013289151 A AU2013289151 A AU 2013289151A AU 2013289151 A AU2013289151 A AU 2013289151A AU 2013289151 A1 AU2013289151 A1 AU 2013289151A1
- Authority
- AU
- Australia
- Prior art keywords
- layer
- metal
- emitter
- cell
- backplane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000004519 manufacturing process Methods 0.000 title abstract description 109
- 238000000034 method Methods 0.000 claims abstract description 589
- 238000001465 metallisation Methods 0.000 claims abstract description 262
- 239000000758 substrate Substances 0.000 claims abstract description 169
- 229910052751 metal Inorganic materials 0.000 claims description 610
- 239000002184 metal Substances 0.000 claims description 610
- 230000008569 process Effects 0.000 claims description 402
- 229910052710 silicon Inorganic materials 0.000 claims description 143
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 141
- 239000010703 silicon Substances 0.000 claims description 140
- 238000002161 passivation Methods 0.000 claims description 92
- 238000007639 printing Methods 0.000 claims description 63
- 239000004065 semiconductor Substances 0.000 claims description 55
- 238000007747 plating Methods 0.000 claims description 46
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 41
- 238000002955 isolation Methods 0.000 claims description 25
- 238000005530 etching Methods 0.000 claims description 14
- 239000007921 spray Substances 0.000 claims description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 238000000227 grinding Methods 0.000 claims description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 602
- 210000004027 cell Anatomy 0.000 description 575
- 239000000463 material Substances 0.000 description 230
- 238000012545 processing Methods 0.000 description 127
- 238000003475 lamination Methods 0.000 description 124
- 238000000151 deposition Methods 0.000 description 122
- 230000008021 deposition Effects 0.000 description 105
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 92
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 90
- 229910052782 aluminium Inorganic materials 0.000 description 90
- 238000002679 ablation Methods 0.000 description 88
- 238000005240 physical vapour deposition Methods 0.000 description 83
- 235000012431 wafers Nutrition 0.000 description 83
- 238000009792 diffusion process Methods 0.000 description 77
- 239000000853 adhesive Substances 0.000 description 73
- 230000001070 adhesive effect Effects 0.000 description 73
- 230000015572 biosynthetic process Effects 0.000 description 73
- 238000000608 laser ablation Methods 0.000 description 71
- 238000013461 design Methods 0.000 description 68
- 239000011888 foil Substances 0.000 description 65
- 238000007650 screen-printing Methods 0.000 description 61
- 238000005553 drilling Methods 0.000 description 57
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 49
- 239000006096 absorbing agent Substances 0.000 description 49
- 239000011521 glass Substances 0.000 description 49
- 239000010949 copper Substances 0.000 description 47
- 238000010586 diagram Methods 0.000 description 46
- 239000011135 tin Substances 0.000 description 46
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 45
- 229910021426 porous silicon Inorganic materials 0.000 description 45
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 44
- 239000000976 ink Substances 0.000 description 41
- 230000002787 reinforcement Effects 0.000 description 37
- 229910052802 copper Inorganic materials 0.000 description 36
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 36
- 238000000059 patterning Methods 0.000 description 36
- 241001323321 Pluto Species 0.000 description 33
- 230000008901 benefit Effects 0.000 description 32
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 30
- 239000004593 Epoxy Substances 0.000 description 29
- 239000010409 thin film Substances 0.000 description 29
- 239000002019 doping agent Substances 0.000 description 28
- 239000007943 implant Substances 0.000 description 28
- 239000000969 carrier Substances 0.000 description 26
- 239000005038 ethylene vinyl acetate Substances 0.000 description 26
- 239000000443 aerosol Substances 0.000 description 25
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 25
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 25
- 229910000679 solder Inorganic materials 0.000 description 25
- 229910021419 crystalline silicon Inorganic materials 0.000 description 24
- 210000002381 plasma Anatomy 0.000 description 24
- 229920005989 resin Polymers 0.000 description 24
- 239000011347 resin Substances 0.000 description 24
- 238000011065 in-situ storage Methods 0.000 description 23
- 229910052709 silver Inorganic materials 0.000 description 23
- 229910019213 POCl3 Inorganic materials 0.000 description 22
- 238000007641 inkjet printing Methods 0.000 description 22
- 229910052759 nickel Inorganic materials 0.000 description 22
- 150000002739 metals Chemical class 0.000 description 21
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 20
- 229910052698 phosphorus Inorganic materials 0.000 description 20
- 239000011574 phosphorus Substances 0.000 description 20
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 19
- 229910052581 Si3N4 Inorganic materials 0.000 description 19
- 229910052796 boron Inorganic materials 0.000 description 19
- 238000004140 cleaning Methods 0.000 description 19
- 239000003989 dielectric material Substances 0.000 description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 17
- 230000009977 dual effect Effects 0.000 description 17
- 230000006870 function Effects 0.000 description 17
- KRHYYFGTRYWZRS-UHFFFAOYSA-N hydrofluoric acid Substances F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 17
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 17
- HBVFXTAPOLSOPB-UHFFFAOYSA-N nickel vanadium Chemical compound [V].[Ni] HBVFXTAPOLSOPB-UHFFFAOYSA-N 0.000 description 17
- 239000004332 silver Substances 0.000 description 17
- 239000000126 substance Substances 0.000 description 17
- 238000011066 ex-situ storage Methods 0.000 description 15
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 15
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 15
- 230000001681 protective effect Effects 0.000 description 15
- 238000000926 separation method Methods 0.000 description 15
- 229910052718 tin Inorganic materials 0.000 description 15
- 238000009966 trimming Methods 0.000 description 15
- 239000010408 film Substances 0.000 description 14
- 239000007789 gas Substances 0.000 description 14
- 239000005543 nano-size silicon particle Substances 0.000 description 14
- 229920003023 plastic Polymers 0.000 description 14
- 238000007654 immersion Methods 0.000 description 13
- 238000002294 plasma sputter deposition Methods 0.000 description 13
- 239000004033 plastic Substances 0.000 description 13
- 230000002829 reductive effect Effects 0.000 description 13
- 238000005507 spraying Methods 0.000 description 13
- 229910045601 alloy Inorganic materials 0.000 description 12
- 239000000956 alloy Substances 0.000 description 12
- 239000011449 brick Substances 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 12
- 230000036961 partial effect Effects 0.000 description 12
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 12
- 230000006798 recombination Effects 0.000 description 12
- 238000005215 recombination Methods 0.000 description 12
- 238000012360 testing method Methods 0.000 description 12
- 238000000137 annealing Methods 0.000 description 11
- 238000001704 evaporation Methods 0.000 description 11
- 230000008020 evaporation Effects 0.000 description 11
- 239000001257 hydrogen Substances 0.000 description 11
- 229910052739 hydrogen Inorganic materials 0.000 description 11
- 230000001590 oxidative effect Effects 0.000 description 11
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 10
- 239000010953 base metal Substances 0.000 description 10
- 239000004020 conductor Substances 0.000 description 10
- 238000005520 cutting process Methods 0.000 description 10
- 239000008393 encapsulating agent Substances 0.000 description 10
- 239000000835 fiber Substances 0.000 description 10
- 238000002513 implantation Methods 0.000 description 10
- 239000005368 silicate glass Substances 0.000 description 10
- 238000011282 treatment Methods 0.000 description 10
- 229920002799 BoPET Polymers 0.000 description 9
- 239000005041 Mylar™ Substances 0.000 description 9
- 238000013459 approach Methods 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 9
- 238000010023 transfer printing Methods 0.000 description 9
- 238000007704 wet chemistry method Methods 0.000 description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 8
- 238000000407 epitaxy Methods 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 230000008093 supporting effect Effects 0.000 description 8
- 238000012546 transfer Methods 0.000 description 8
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 8
- 239000005052 trichlorosilane Substances 0.000 description 8
- 238000007738 vacuum evaporation Methods 0.000 description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 7
- 239000006117 anti-reflective coating Substances 0.000 description 7
- 238000000605 extraction Methods 0.000 description 7
- 239000002243 precursor Substances 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 7
- 229920001169 thermoplastic Polymers 0.000 description 7
- 239000004416 thermosoftening plastic Substances 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000006731 degradation reaction Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 230000001976 improved effect Effects 0.000 description 6
- 238000010030 laminating Methods 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 239000005361 soda-lime glass Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 230000009466 transformation Effects 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 5
- 238000005137 deposition process Methods 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- 230000010354 integration Effects 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 229920002620 polyvinyl fluoride Polymers 0.000 description 5
- 238000004080 punching Methods 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- 238000012421 spiking Methods 0.000 description 5
- 238000007751 thermal spraying Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- 101100459910 Arabidopsis thaliana NCS1 gene Proteins 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 4
- 239000005388 borosilicate glass Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 238000003776 cleavage reaction Methods 0.000 description 4
- 238000012864 cross contamination Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000011049 filling Methods 0.000 description 4
- 238000010285 flame spraying Methods 0.000 description 4
- 238000005247 gettering Methods 0.000 description 4
- 238000007737 ion beam deposition Methods 0.000 description 4
- 238000005224 laser annealing Methods 0.000 description 4
- 230000000670 limiting effect Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 230000007935 neutral effect Effects 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 238000007788 roughening Methods 0.000 description 4
- 230000007017 scission Effects 0.000 description 4
- 230000011218 segmentation Effects 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 229910018125 Al-Si Inorganic materials 0.000 description 3
- 229910018520 Al—Si Inorganic materials 0.000 description 3
- 101100126074 Caenorhabditis elegans imp-2 gene Proteins 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000005422 blasting Methods 0.000 description 3
- -1 but not limited to Substances 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 230000001627 detrimental effect Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000004299 exfoliation Methods 0.000 description 3
- 238000003306 harvesting Methods 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229920000271 Kevlar® Polymers 0.000 description 2
- 125000000174 L-prolyl group Chemical group [H]N1C([H])([H])C([H])([H])C([H])([H])[C@@]1([H])C(*)=O 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 229910020286 SiOxNy Inorganic materials 0.000 description 2
- 229910020776 SixNy Inorganic materials 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 2
- 239000004760 aramid Substances 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 210000000988 bone and bone Anatomy 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 239000003251 chemically resistant material Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000000593 degrading effect Effects 0.000 description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000002355 dual-layer Substances 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000002421 finishing Substances 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000004761 kevlar Substances 0.000 description 2
- 238000003698 laser cutting Methods 0.000 description 2
- 238000010330 laser marking Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 238000002203 pretreatment Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 230000010349 pulsation Effects 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 238000010008 shearing Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000005049 silicon tetrachloride Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000010944 silver (metal) Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 238000009823 thermal lamination Methods 0.000 description 2
- 238000007669 thermal treatment Methods 0.000 description 2
- 230000008719 thickening Effects 0.000 description 2
- 230000035899 viability Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 101100268078 Mus musculus Zbtb24 gene Proteins 0.000 description 1
- 101100335694 Oryza sativa subsp. japonica G1L6 gene Proteins 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910003811 SiGeC Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910007637 SnAg Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000000637 aluminium metallisation Methods 0.000 description 1
- FJMNNXLGOUYVHO-UHFFFAOYSA-N aluminum zinc Chemical compound [Al].[Zn] FJMNNXLGOUYVHO-UHFFFAOYSA-N 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229920006231 aramid fiber Polymers 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JWVAUCBYEDDGAD-UHFFFAOYSA-N bismuth tin Chemical compound [Sn].[Bi] JWVAUCBYEDDGAD-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000010344 co-firing Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000000254 damaging effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 238000010017 direct printing Methods 0.000 description 1
- FGXWKSZFVQUSTL-UHFFFAOYSA-N domperidone Chemical compound C12=CC=CC=C2NC(=O)N1CCCN(CC1)CCC1N1C2=CC=C(Cl)C=C2NC1=O FGXWKSZFVQUSTL-UHFFFAOYSA-N 0.000 description 1
- 238000011143 downstream manufacturing Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000005661 hydrophobic surface Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000005527 interface trap Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- OYLRFHLPEAGKJU-UHFFFAOYSA-N phosphane silicic acid Chemical compound P.[Si](O)(O)(O)O OYLRFHLPEAGKJU-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 150000003071 polychlorinated biphenyls Chemical class 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000003389 potentiating effect Effects 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000012812 sealant material Substances 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000000527 sonication Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000012815 thermoplastic material Substances 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 239000004634 thermosetting polymer Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- 238000003949 trap density measurement Methods 0.000 description 1
- 238000004148 unit process Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 230000004382 visual function Effects 0.000 description 1
- 238000009756 wet lay-up Methods 0.000 description 1
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
- H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
- H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
- H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
- H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261619300P | 2012-04-02 | 2012-04-02 | |
| US61/619,300 | 2012-04-02 | ||
| PCT/US2013/035029 WO2014011260A2 (en) | 2012-04-02 | 2013-04-02 | High efficiency solar cell structures and manufacturing methods |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2013289151A1 true AU2013289151A1 (en) | 2014-11-13 |
Family
ID=49916638
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2013289151A Abandoned AU2013289151A1 (en) | 2012-04-02 | 2013-04-02 | High efficiency solar cell structures and manufacturing methods |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2015516145A (enExample) |
| AU (1) | AU2013289151A1 (enExample) |
| WO (1) | WO2014011260A2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2024339215A1 (en) * | 2024-04-28 | 2025-11-13 | Longi Green Energy Technology Co., Ltd. | Solar cell and photovoltaic module |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10164131B2 (en) * | 2014-12-19 | 2018-12-25 | Sunpower Corporation | Multi-layer sputtered metal seed for solar cell conductive contact |
| FR3050870B1 (fr) * | 2016-04-28 | 2018-05-25 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de realisation d’un dispositif de detection de rayonnement electromagnetique comportant une couche en un materiau getter |
| CN112466967B (zh) * | 2020-11-23 | 2023-08-22 | 浙江晶科能源有限公司 | 一种选择性发射极太阳能电池及其制备方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6313396B1 (en) * | 2000-05-22 | 2001-11-06 | The Boeing Company | Lightweight solar module and method of fabrication |
| JP2005317779A (ja) * | 2004-04-28 | 2005-11-10 | Toyota Motor Corp | 光電変換素子 |
| JP2008052767A (ja) * | 2006-08-22 | 2008-03-06 | Sony Corp | 記録装置および記録方法、並びにプログラム |
| EP2137757B1 (en) * | 2007-04-17 | 2015-09-02 | Imec | Method for reducing the thickness of substrates |
| WO2008157577A2 (en) * | 2007-06-18 | 2008-12-24 | E-Cube Technologies, Inc. | Methods and apparatuses for improving power extraction from solar cells |
| JP5252472B2 (ja) * | 2007-09-28 | 2013-07-31 | シャープ株式会社 | 太陽電池、太陽電池の製造方法、太陽電池モジュールの製造方法および太陽電池モジュール |
| DE102009014348A1 (de) * | 2008-06-12 | 2009-12-17 | Bayer Materialscience Ag | Leichtes, biegesteifes und selbsttragendes Solarmodul sowie ein Verfahren zu dessen Herstellung |
| EP2404317A4 (en) * | 2009-03-06 | 2014-06-11 | Solexel Inc | PROCESS FOR DISPOSING A THIN-FILM SUBSTRATE |
| JP2011054831A (ja) * | 2009-09-03 | 2011-03-17 | Sharp Corp | バックコンタクト型太陽電池セル、太陽電池ストリングおよび太陽電池モジュール |
| KR20120104431A (ko) * | 2010-01-22 | 2012-09-20 | 샤프 가부시키가이샤 | 이면 전극형 태양전지 셀, 배선 시트, 배선 시트를 가진 태양전지 셀, 태양전지 모듈 및 배선 시트를 가진 태양전지 셀의 제조방법 |
| EP2577750A4 (en) * | 2010-05-27 | 2014-04-09 | Solexel Inc | LASER PROCESSING FOR THE PRODUCTION OF HIGHLY EFFICIENT THIN SILICONE CRYSTAL SOLAR CELLS |
| KR101289789B1 (ko) * | 2010-08-13 | 2013-07-26 | 솔렉셀, 인크. | 기판을 이용한 박막 반도체 기재의 반복 가공 장치 및 방법 |
| US8772076B2 (en) * | 2010-09-03 | 2014-07-08 | Solopower Systems, Inc. | Back contact diffusion barrier layers for group ibiiiavia photovoltaic cells |
| US20120073650A1 (en) * | 2010-09-24 | 2012-03-29 | David Smith | Method of fabricating an emitter region of a solar cell |
-
2013
- 2013-04-02 WO PCT/US2013/035029 patent/WO2014011260A2/en not_active Ceased
- 2013-04-02 JP JP2015504686A patent/JP2015516145A/ja not_active Ceased
- 2013-04-02 AU AU2013289151A patent/AU2013289151A1/en not_active Abandoned
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2024339215A1 (en) * | 2024-04-28 | 2025-11-13 | Longi Green Energy Technology Co., Ltd. | Solar cell and photovoltaic module |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015516145A (ja) | 2015-06-08 |
| WO2014011260A3 (en) | 2014-04-10 |
| WO2014011260A2 (en) | 2014-01-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| AU2012294932B2 (en) | High-efficiency solar photovoltaic cells and modules using thin crystalline semiconductor absorbers | |
| US20170278991A1 (en) | Multi-level solar cell metallization | |
| US20130228221A1 (en) | Manufacturing methods and structures for large-area thin-film solar cells and other semiconductor devices | |
| US20130213469A1 (en) | High efficiency solar cell structures and manufacturing methods | |
| US20150171230A1 (en) | Fabrication methods for back contact solar cells | |
| US20170236954A1 (en) | High efficiency solar cell structures and manufacturing methods | |
| JP6250552B2 (ja) | マルチレベルソーラーセルメタライゼーション | |
| AU2013272248A1 (en) | Manufacturing methods and structures for large-area thin-film solar cells and other semiconductor devices | |
| US9379258B2 (en) | Fabrication methods for monolithically isled back contact back junction solar cells | |
| US9515217B2 (en) | Monolithically isled back contact back junction solar cells | |
| US9911875B2 (en) | Solar cell metallization | |
| JP5528809B2 (ja) | 三次元薄膜太陽電池製造のためのテンプレート及び使用方法 | |
| KR102015591B1 (ko) | 박형 실리콘 태양 전지용 활성 후면판 | |
| US20160013335A1 (en) | Active backplane for thin silicon solar cells | |
| JP2016500931A (ja) | 一体アイル型太陽光発電セル及びモジュールのためのシステム及び方法 | |
| WO2014127067A1 (en) | Monolithically isled back contact back junction solar cells using bulk wafers | |
| JP2014150280A (ja) | 三次元薄膜太陽電池製造のためのテンプレート及び使用方法 | |
| AU2016200610B2 (en) | Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells | |
| AU2013289151A1 (en) | High efficiency solar cell structures and manufacturing methods | |
| WO2015100392A2 (en) | Self aligned contacts for monolithically isled back contact back junction solar cells |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK5 | Application lapsed section 142(2)(e) - patent request and compl. specification not accepted |