JP2015516145A - 高効率太陽電池構造体及びその製造方法 - Google Patents

高効率太陽電池構造体及びその製造方法 Download PDF

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Publication number
JP2015516145A
JP2015516145A JP2015504686A JP2015504686A JP2015516145A JP 2015516145 A JP2015516145 A JP 2015516145A JP 2015504686 A JP2015504686 A JP 2015504686A JP 2015504686 A JP2015504686 A JP 2015504686A JP 2015516145 A JP2015516145 A JP 2015516145A
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Prior art keywords
layer
metal
solar cell
backplane
contact
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Ceased
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JP2015504686A
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English (en)
Japanese (ja)
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JP2015516145A5 (enExample
Inventor
カール ジョセフ クラマー
カール ジョセフ クラマー
メールダッド エム モスレヒ
メールダッド エム モスレヒ
パワン カプール
パワン カプール
ヴィレンドラ ヴイ ラナ
ヴィレンドラ ヴイ ラナ
ディヴィッド ダットン
ディヴィッド ダットン
ショーン エム セウター
ショーン エム セウター
アンソニー カルカテッラ
アンソニー カルカテッラ
ジェイ アシュジャイー
ジェイ アシュジャイー
タカオ ヨネハラ
タカオ ヨネハラ
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ソレクセル、インコーポレイテッド
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Publication of JP2015516145A publication Critical patent/JP2015516145A/ja
Publication of JP2015516145A5 publication Critical patent/JP2015516145A5/ja
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
JP2015504686A 2012-04-02 2013-04-02 高効率太陽電池構造体及びその製造方法 Ceased JP2015516145A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261619300P 2012-04-02 2012-04-02
US61/619,300 2012-04-02
PCT/US2013/035029 WO2014011260A2 (en) 2012-04-02 2013-04-02 High efficiency solar cell structures and manufacturing methods

Publications (2)

Publication Number Publication Date
JP2015516145A true JP2015516145A (ja) 2015-06-08
JP2015516145A5 JP2015516145A5 (enExample) 2016-07-07

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Family Applications (1)

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JP2015504686A Ceased JP2015516145A (ja) 2012-04-02 2013-04-02 高効率太陽電池構造体及びその製造方法

Country Status (3)

Country Link
JP (1) JP2015516145A (enExample)
AU (1) AU2013289151A1 (enExample)
WO (1) WO2014011260A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170123276A (ko) * 2016-04-28 2017-11-07 꼼미사리아 아 레네르지 아토미끄 에뜨 옥스 에너지스 앨터네이티브즈 게터 물질 층을 포함하는 전자파 검출 장치를 만드는 방법

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10164131B2 (en) * 2014-12-19 2018-12-25 Sunpower Corporation Multi-layer sputtered metal seed for solar cell conductive contact
CN112466967B (zh) * 2020-11-23 2023-08-22 浙江晶科能源有限公司 一种选择性发射极太阳能电池及其制备方法
DE212024000084U1 (de) * 2024-04-28 2025-04-03 Longi Green Energy Technology Co., Ltd. Solarzelle und Photovoltaikmodul

Citations (9)

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JP2001332753A (ja) * 2000-05-22 2001-11-30 Boeing Co:The 軽量の太陽電池モジュールおよびその製造方法
JP2005317779A (ja) * 2004-04-28 2005-11-10 Toyota Motor Corp 光電変換素子
JP2008052767A (ja) * 2006-08-22 2008-03-06 Sony Corp 記録装置および記録方法、並びにプログラム
JP2009088145A (ja) * 2007-09-28 2009-04-23 Sharp Corp 太陽電池、太陽電池の製造方法、太陽電池モジュールの製造方法および太陽電池モジュール
WO2010102306A1 (en) * 2009-03-06 2010-09-10 Solexel, Inc. Method for releasing a thin-film substrate
JP2011054831A (ja) * 2009-09-03 2011-03-17 Sharp Corp バックコンタクト型太陽電池セル、太陽電池ストリングおよび太陽電池モジュール
WO2011150397A2 (en) * 2010-05-27 2011-12-01 Solexel, Inc. Laser processing for high-efficiency thin crystalline silicon solar cell fabrication
WO2012021880A2 (en) * 2010-08-13 2012-02-16 Solexel, Inc. Apparatus and method for repeatedly fabricating thin film semiconductor substrates using a template
WO2012039831A1 (en) * 2010-09-24 2012-03-29 Sunpower Corporation Method of fabricating an emitter region of a solar cell

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EP2137757B1 (en) * 2007-04-17 2015-09-02 Imec Method for reducing the thickness of substrates
WO2008157577A2 (en) * 2007-06-18 2008-12-24 E-Cube Technologies, Inc. Methods and apparatuses for improving power extraction from solar cells
DE102009014348A1 (de) * 2008-06-12 2009-12-17 Bayer Materialscience Ag Leichtes, biegesteifes und selbsttragendes Solarmodul sowie ein Verfahren zu dessen Herstellung
KR20120104431A (ko) * 2010-01-22 2012-09-20 샤프 가부시키가이샤 이면 전극형 태양전지 셀, 배선 시트, 배선 시트를 가진 태양전지 셀, 태양전지 모듈 및 배선 시트를 가진 태양전지 셀의 제조방법
US8772076B2 (en) * 2010-09-03 2014-07-08 Solopower Systems, Inc. Back contact diffusion barrier layers for group ibiiiavia photovoltaic cells

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001332753A (ja) * 2000-05-22 2001-11-30 Boeing Co:The 軽量の太陽電池モジュールおよびその製造方法
JP2005317779A (ja) * 2004-04-28 2005-11-10 Toyota Motor Corp 光電変換素子
JP2008052767A (ja) * 2006-08-22 2008-03-06 Sony Corp 記録装置および記録方法、並びにプログラム
JP2009088145A (ja) * 2007-09-28 2009-04-23 Sharp Corp 太陽電池、太陽電池の製造方法、太陽電池モジュールの製造方法および太陽電池モジュール
WO2010102306A1 (en) * 2009-03-06 2010-09-10 Solexel, Inc. Method for releasing a thin-film substrate
JP2011054831A (ja) * 2009-09-03 2011-03-17 Sharp Corp バックコンタクト型太陽電池セル、太陽電池ストリングおよび太陽電池モジュール
WO2011150397A2 (en) * 2010-05-27 2011-12-01 Solexel, Inc. Laser processing for high-efficiency thin crystalline silicon solar cell fabrication
WO2012021880A2 (en) * 2010-08-13 2012-02-16 Solexel, Inc. Apparatus and method for repeatedly fabricating thin film semiconductor substrates using a template
WO2012039831A1 (en) * 2010-09-24 2012-03-29 Sunpower Corporation Method of fabricating an emitter region of a solar cell

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170123276A (ko) * 2016-04-28 2017-11-07 꼼미사리아 아 레네르지 아토미끄 에뜨 옥스 에너지스 앨터네이티브즈 게터 물질 층을 포함하는 전자파 검출 장치를 만드는 방법
KR102419468B1 (ko) 2016-04-28 2022-07-11 꼼미사리아 아 레네르지 아토미끄 에뜨 옥스 에너지스 앨터네이티브즈 게터 물질 층을 포함하는 전자파 검출 장치를 만드는 방법

Also Published As

Publication number Publication date
AU2013289151A1 (en) 2014-11-13
WO2014011260A3 (en) 2014-04-10
WO2014011260A2 (en) 2014-01-16

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