AU2013237141B2 - PN-structured gate demodulation pixel - Google Patents

PN-structured gate demodulation pixel Download PDF

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Publication number
AU2013237141B2
AU2013237141B2 AU2013237141A AU2013237141A AU2013237141B2 AU 2013237141 B2 AU2013237141 B2 AU 2013237141B2 AU 2013237141 A AU2013237141 A AU 2013237141A AU 2013237141 A AU2013237141 A AU 2013237141A AU 2013237141 B2 AU2013237141 B2 AU 2013237141B2
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AU
Australia
Prior art keywords
gate
doped
gates
regions
integration
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Ceased
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AU2013237141A
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English (en)
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AU2013237141A1 (en
Inventor
Bernhard Buettgen
Michael Lehmann
Bruno VAELLO
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram Asia Pacific Pte Ltd
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Ams Osram Asia Pacific Pte Ltd
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Publication of AU2013237141A1 publication Critical patent/AU2013237141A1/en
Assigned to HEPTAGON MICRO OPTICS PTE. LTD. reassignment HEPTAGON MICRO OPTICS PTE. LTD. Request for Assignment Assignors: MESA IMAGING AG
Application granted granted Critical
Publication of AU2013237141B2 publication Critical patent/AU2013237141B2/en
Assigned to AMS-OSRAM ASIA PACIFIC PTE. LTD. reassignment AMS-OSRAM ASIA PACIFIC PTE. LTD. Request to Amend Deed and Register Assignors: HEPTAGON MICRO OPTICS PTE. LTD.
Ceased legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/285—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices having PN homojunction gates
    • H10F30/2857—CCDs having PN homojunction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/671—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor having lateral variation in doping or structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials

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  • Solid State Image Pick-Up Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
AU2013237141A 2012-03-20 2013-03-20 PN-structured gate demodulation pixel Ceased AU2013237141B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261613363P 2012-03-20 2012-03-20
US61/613,363 2012-03-20
PCT/IB2013/000422 WO2013140227A1 (en) 2012-03-20 2013-03-20 Pn-structured gate demodulation pixel

Publications (2)

Publication Number Publication Date
AU2013237141A1 AU2013237141A1 (en) 2014-08-21
AU2013237141B2 true AU2013237141B2 (en) 2016-05-12

Family

ID=48227339

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2013237141A Ceased AU2013237141B2 (en) 2012-03-20 2013-03-20 PN-structured gate demodulation pixel

Country Status (7)

Country Link
US (1) US9343607B2 (enExample)
EP (1) EP2828891B1 (enExample)
JP (1) JP6127128B2 (enExample)
KR (1) KR102094738B1 (enExample)
CN (1) CN104303304B (enExample)
AU (1) AU2013237141B2 (enExample)
WO (1) WO2013140227A1 (enExample)

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US9721987B2 (en) * 2014-02-03 2017-08-01 Taiwan Semiconductor Manufacturing Co., Ltd. Pixel with transistor gate covering photodiode
CN105097850B (zh) * 2014-04-25 2019-03-29 格科微电子（上海）有限公司 Cmos图像传感器及其制造方法
EP3082165B1 (en) * 2015-04-17 2021-07-28 STMicroelectronics (Research & Development) Limited A pixel having a plurality of pinned photodiodes
GB2537421A (en) 2015-04-17 2016-10-19 Stmicroelectronics (Research & Development) Ltd A pixel having a plurality of photodiodes
US9860466B2 (en) * 2015-05-14 2018-01-02 Kla-Tencor Corporation Sensor with electrically controllable aperture for inspection and metrology systems
CN105161462A (zh) * 2015-07-22 2015-12-16 格科微电子（上海）有限公司 提高背照式图像传感器的载流子传输效率的方法
US10418410B2 (en) 2015-10-08 2019-09-17 Ams Sensors Singapore Pte. Ltd. Optoelectronic modules operable to collect spectral data and distance data
TWI571938B (zh) * 2015-10-15 2017-02-21 力晶科技股份有限公司 半導體元件及其製造方法
US10276628B2 (en) 2016-05-17 2019-04-30 Ams Sensors Singapore Pte. Ltd. Time-of-fight pixel including in-pixel buried channel transistors
JP7209170B2 (ja) * 2017-06-29 2023-01-20 パナソニックＩｐマネジメント株式会社 光検出装置、及び撮像装置
JP6967716B2 (ja) * 2017-06-29 2021-11-17 パナソニックＩｐマネジメント株式会社 光検出装置、及び撮像装置
CN111819695B (zh) * 2020-03-17 2024-06-11 深圳市汇顶科技股份有限公司 光传感器及基于飞行时间的测距系统
US11742370B2 (en) 2020-05-27 2023-08-29 Microsoft Technology Licensing, Llc Time-of-flight pixel with vertical photogates
CN112331688B (zh) * 2020-11-04 2022-07-29 中国电子科技集团公司第四十四研究所 一种同时实现大信号处理和高频转移的ccd结构
DE102020132868A1 (de) * 2020-12-09 2022-06-09 Ifm Electronic Gmbh Lichtlaufzeitpixel mit Ladungsspeicher
CN112864183B (zh) * 2021-01-18 2023-08-25 上海集成电路装备材料产业创新中心有限公司 一种改善传输迟滞的像元结构
CN113889495A (zh) * 2021-09-06 2022-01-04 天津大学 降低前馈效应的psd型传输栅图像传感器及制作方法
JP7572012B2 (ja) * 2022-08-27 2024-10-23 Ｔｏｐｐａｎホールディングス株式会社 光検出素子及び固体撮像装置
CN115548138B (zh) * 2022-08-31 2025-06-27 山东东仪光电仪器有限公司 低电容硅像素探测器阵列芯片及其制作方法
FR3142606B1 (fr) * 2022-11-29 2024-11-15 Commissariat Energie Atomique Démodulateur photonique assisté par courant à performances améliorées comportant des électrodes intermédiaires

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060118835A1 (en) * 2004-12-03 2006-06-08 International Business Machines Corporation Predoped transfer gate for an image sensor
EP1777747A1 (en) * 2005-10-19 2007-04-25 CSEM Centre Suisse d'Electronique et de Microtechnique SA Device and method for the demodulation of modulated electromagnetic wave fields
US20070158770A1 (en) * 2004-02-18 2007-07-12 National University Corporation Shizuoka Univ. Time-of-light flight type distance sensor
US20090179232A1 (en) * 2008-01-14 2009-07-16 Adkisson James W Low lag transfer gate device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2389960A (en) 2002-06-20 2003-12-24 Suisse Electronique Microtech Four-tap demodulation pixel
JP4847828B2 (ja) * 2006-09-22 2011-12-28 旭化成エレクトロニクス株式会社 Ｃｍｏｓイメージセンサの製造方法
US8953149B2 (en) * 2009-02-17 2015-02-10 Microsoft Corporation CMOS three-dimensional image sensor detectors having reduced inter-gate capacitance, and enhanced modulation contrast

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070158770A1 (en) * 2004-02-18 2007-07-12 National University Corporation Shizuoka Univ. Time-of-light flight type distance sensor
US20060118835A1 (en) * 2004-12-03 2006-06-08 International Business Machines Corporation Predoped transfer gate for an image sensor
EP1777747A1 (en) * 2005-10-19 2007-04-25 CSEM Centre Suisse d'Electronique et de Microtechnique SA Device and method for the demodulation of modulated electromagnetic wave fields
US20090179232A1 (en) * 2008-01-14 2009-07-16 Adkisson James W Low lag transfer gate device

Also Published As

Publication number Publication date
WO2013140227A1 (en) 2013-09-26
AU2013237141A1 (en) 2014-08-21
EP2828891B1 (en) 2017-03-15
CN104303304A (zh) 2015-01-21
JP2015512562A (ja) 2015-04-27
US20130248938A1 (en) 2013-09-26
CN104303304B (zh) 2017-10-03
KR20140146088A (ko) 2014-12-24
JP6127128B2 (ja) 2017-05-10
KR102094738B1 (ko) 2020-03-31
EP2828891A1 (en) 2015-01-28
US9343607B2 (en) 2016-05-17

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Owner name: HEPTAGON MICRO OPTICS PTE. LTD.

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FGA Letters patent sealed or granted (standard patent)
HB Alteration of name in register

Owner name: AMS-OSRAM ASIA PACIFIC PTE. LTD.

Free format text: FORMER NAME(S): HEPTAGON MICRO OPTICS PTE. LTD.

MK14 Patent ceased section 143(a) (annual fees not paid) or expired