AU2005256723B8 - Method for producing a multilayer structure comprising a separating layer - Google Patents

Method for producing a multilayer structure comprising a separating layer Download PDF

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Publication number
AU2005256723B8
AU2005256723B8 AU2005256723A AU2005256723A AU2005256723B8 AU 2005256723 B8 AU2005256723 B8 AU 2005256723B8 AU 2005256723 A AU2005256723 A AU 2005256723A AU 2005256723 A AU2005256723 A AU 2005256723A AU 2005256723 B8 AU2005256723 B8 AU 2005256723B8
Authority
AU
Australia
Prior art keywords
intermediate layer
layer
impurities
material constituting
power flux
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
AU2005256723A
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English (en)
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AU2005256723B2 (en
AU2005256723A1 (en
Inventor
Michel Bruel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Publication of AU2005256723A1 publication Critical patent/AU2005256723A1/en
Publication of AU2005256723B2 publication Critical patent/AU2005256723B2/en
Assigned to S.O.I. TEC SILICON ON INSULATORTECHNOLOGIES reassignment S.O.I. TEC SILICON ON INSULATORTECHNOLOGIES Request for Assignment Assignors: BRUEL, MICHEL
Application granted granted Critical
Publication of AU2005256723B8 publication Critical patent/AU2005256723B8/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
AU2005256723A 2004-06-01 2005-05-20 Method for producing a multilayer structure comprising a separating layer Ceased AU2005256723B8 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0405883 2004-06-01
FR0405883A FR2870988B1 (fr) 2004-06-01 2004-06-01 Procede de realisation d'une structure multi-couches comportant, en profondeur, une couche de separation
PCT/FR2005/001262 WO2006000669A2 (fr) 2004-06-01 2005-05-20 Procédé de réalisation d'une structure multi-couches comportant, en profondeur, une couche de séparation.

Publications (3)

Publication Number Publication Date
AU2005256723A1 AU2005256723A1 (en) 2006-01-05
AU2005256723B2 AU2005256723B2 (en) 2011-02-10
AU2005256723B8 true AU2005256723B8 (en) 2011-07-28

Family

ID=34946629

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2005256723A Ceased AU2005256723B8 (en) 2004-06-01 2005-05-20 Method for producing a multilayer structure comprising a separating layer

Country Status (8)

Country Link
US (1) US7846816B2 (https=)
EP (1) EP1774579B1 (https=)
JP (1) JP5335237B2 (https=)
CN (1) CN100444335C (https=)
AU (1) AU2005256723B8 (https=)
BR (1) BRPI0511207A (https=)
FR (1) FR2870988B1 (https=)
WO (1) WO2006000669A2 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8288684B2 (en) * 2007-05-03 2012-10-16 Electro Scientific Industries, Inc. Laser micro-machining system with post-scan lens deflection
FR2961719B1 (fr) * 2010-06-24 2013-09-27 Soitec Silicon On Insulator Procede de traitement d'une piece en un materiau compose
FR2965396B1 (fr) * 2010-09-29 2013-02-22 S O I Tec Silicon On Insulator Tech Substrat démontable, procédés de fabrication et de démontage d'un tel substrat
RU2469433C1 (ru) * 2011-07-13 2012-12-10 Юрий Георгиевич Шретер Способ лазерного отделения эпитаксиальной пленки или слоя эпитаксиальной пленки от ростовой подложки эпитаксиальной полупроводниковой структуры (варианты)
FR2978600B1 (fr) 2011-07-25 2014-02-07 Soitec Silicon On Insulator Procede et dispositif de fabrication de couche de materiau semi-conducteur
FR2980279B1 (fr) * 2011-09-20 2013-10-11 Soitec Silicon On Insulator Procede de fabrication d'une structure composite a separer par exfoliation
CN107039532B (zh) * 2012-03-30 2020-08-25 帝人株式会社 掺杂剂注入层、其形成方法及半导体装置的制造方法
FR2991499A1 (fr) * 2012-05-31 2013-12-06 Commissariat Energie Atomique Procede et systeme d'obtention d'une tranche semi-conductrice
CN106340439A (zh) * 2015-07-06 2017-01-18 勤友光电股份有限公司 用于镭射剥离处理的晶圆结构
DE102016000051A1 (de) * 2016-01-05 2017-07-06 Siltectra Gmbh Verfahren und Vorrichtung zum planaren Erzeugen von Modifikationen in Festkörpern
EP4166270B1 (de) * 2016-03-22 2024-10-16 Siltectra GmbH Verfahren zum abtrennen durch laserbestrahlung einer festkörperschicht von einem festkörper
WO2018108938A1 (de) 2016-12-12 2018-06-21 Siltectra Gmbh Verfahren zum dünnen von mit bauteilen versehenen festkörperschichten
TWI631022B (zh) * 2016-12-26 2018-08-01 謙華科技股份有限公司 熱印頭模組之製造方法
FR3079657B1 (fr) * 2018-03-29 2024-03-15 Soitec Silicon On Insulator Structure composite demontable par application d'un flux lumineux, et procede de separation d'une telle structure

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4415373A (en) * 1981-11-17 1983-11-15 Allied Corporation Laser process for gettering defects in semiconductor devices
US4452644A (en) * 1980-02-01 1984-06-05 Commissariat A L'energie Atomique Process for doping semiconductors
US6300208B1 (en) * 2000-02-16 2001-10-09 Ultratech Stepper, Inc. Methods for annealing an integrated device using a radiant energy absorber layer
US20020068419A1 (en) * 1997-12-26 2002-06-06 Kiyofumi Sakaguchi Semiconductor article and method of manufacturing the same
US6555439B1 (en) * 2001-12-18 2003-04-29 Advanced Micro Devices, Inc. Partial recrystallization of source/drain region before laser thermal annealing
WO2003046967A2 (en) * 2001-11-30 2003-06-05 Koninklijke Philips Electronics N.V. Method of forming a doped region in a semiconductor body comprising a step of amorphization by irradiation
US20030224582A1 (en) * 1996-08-27 2003-12-04 Seiko Epson Corporation Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004140380A (ja) * 1996-08-27 2004-05-13 Seiko Epson Corp 薄膜デバイスの転写方法、及びデバイスの製造方法
JPH1126733A (ja) 1997-07-03 1999-01-29 Seiko Epson Corp 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置，アクティブマトリクス基板、液晶表示装置および電子機器
JP3697106B2 (ja) * 1998-05-15 2005-09-21 キヤノン株式会社 半導体基板の作製方法及び半導体薄膜の作製方法
JP3911929B2 (ja) * 1999-10-25 2007-05-09 セイコーエプソン株式会社 液晶表示装置の製造方法
US7211214B2 (en) * 2000-07-18 2007-05-01 Princeton University Laser assisted direct imprint lithography
US7105425B1 (en) * 2002-05-16 2006-09-12 Advanced Micro Devices, Inc. Single electron devices formed by laser thermal annealing

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4452644A (en) * 1980-02-01 1984-06-05 Commissariat A L'energie Atomique Process for doping semiconductors
US4415373A (en) * 1981-11-17 1983-11-15 Allied Corporation Laser process for gettering defects in semiconductor devices
US20030224582A1 (en) * 1996-08-27 2003-12-04 Seiko Epson Corporation Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same
US20020068419A1 (en) * 1997-12-26 2002-06-06 Kiyofumi Sakaguchi Semiconductor article and method of manufacturing the same
US6300208B1 (en) * 2000-02-16 2001-10-09 Ultratech Stepper, Inc. Methods for annealing an integrated device using a radiant energy absorber layer
WO2003046967A2 (en) * 2001-11-30 2003-06-05 Koninklijke Philips Electronics N.V. Method of forming a doped region in a semiconductor body comprising a step of amorphization by irradiation
US6555439B1 (en) * 2001-12-18 2003-04-29 Advanced Micro Devices, Inc. Partial recrystallization of source/drain region before laser thermal annealing

Also Published As

Publication number Publication date
EP1774579A2 (fr) 2007-04-18
WO2006000669A2 (fr) 2006-01-05
CN1998071A (zh) 2007-07-11
JP5335237B2 (ja) 2013-11-06
AU2005256723B2 (en) 2011-02-10
US20090053877A1 (en) 2009-02-26
BRPI0511207A (pt) 2007-11-27
FR2870988A1 (fr) 2005-12-02
CN100444335C (zh) 2008-12-17
WO2006000669A3 (fr) 2007-01-25
AU2005256723A1 (en) 2006-01-05
JP2008501228A (ja) 2008-01-17
FR2870988B1 (fr) 2006-08-11
US7846816B2 (en) 2010-12-07
EP1774579B1 (fr) 2012-05-16

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PC1 Assignment before grant (sect. 113)

Owner name: APLINOV

Free format text: FORMER APPLICANT(S): BRUEL, MICHEL

PC1 Assignment before grant (sect. 113)

Owner name: S.O.I. TEC SILICON ON INSULATORTECHNOLOGIES

Free format text: FORMER APPLICANT(S): BRUEL, MICHEL

FGA Letters patent sealed or granted (standard patent)
TH Corrigenda

Free format text: IN VOL 25, NO 6, PAGE(S) 691 UNDER THE HEADING APPLICATIONS ACCEPTED - NAME INDEX UNDER THE NAME APLINOV, APPLICATION NO. 2005256723, UNDER INID (71) CORRECT THE APPLICANT NAME TO S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES

MK14 Patent ceased section 143(a) (annual fees not paid) or expired