AU2003261790A1 - Plasma processing method and plasma processing device - Google Patents

Plasma processing method and plasma processing device

Info

Publication number
AU2003261790A1
AU2003261790A1 AU2003261790A AU2003261790A AU2003261790A1 AU 2003261790 A1 AU2003261790 A1 AU 2003261790A1 AU 2003261790 A AU2003261790 A AU 2003261790A AU 2003261790 A AU2003261790 A AU 2003261790A AU 2003261790 A1 AU2003261790 A1 AU 2003261790A1
Authority
AU
Australia
Prior art keywords
plasma processing
processing device
processing method
plasma
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003261790A
Other languages
English (en)
Inventor
Kimihiro Higuchi
Shin Okamoto
Toshihiko Shindo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of AU2003261790A1 publication Critical patent/AU2003261790A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H01J2237/0044—Neutralising arrangements of objects being observed or treated

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
AU2003261790A 2002-08-30 2003-08-28 Plasma processing method and plasma processing device Abandoned AU2003261790A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002/256096 2002-08-30
JP2002256096A JP4322484B2 (ja) 2002-08-30 2002-08-30 プラズマ処理方法及びプラズマ処理装置
PCT/JP2003/010937 WO2004021427A1 (ja) 2002-08-30 2003-08-28 プラズマ処理方法及びプラズマ処理装置

Publications (1)

Publication Number Publication Date
AU2003261790A1 true AU2003261790A1 (en) 2004-03-19

Family

ID=31972935

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003261790A Abandoned AU2003261790A1 (en) 2002-08-30 2003-08-28 Plasma processing method and plasma processing device

Country Status (6)

Country Link
JP (1) JP4322484B2 (enrdf_load_stackoverflow)
KR (1) KR100782621B1 (enrdf_load_stackoverflow)
CN (1) CN100414672C (enrdf_load_stackoverflow)
AU (1) AU2003261790A1 (enrdf_load_stackoverflow)
TW (1) TW200410332A (enrdf_load_stackoverflow)
WO (1) WO2004021427A1 (enrdf_load_stackoverflow)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7205250B2 (en) * 2003-03-18 2007-04-17 Matsushita Electric Industrial Co., Ltd. Plasma processing method and apparatus
US7316785B2 (en) * 2004-06-30 2008-01-08 Lam Research Corporation Methods and apparatus for the optimization of etch resistance in a plasma processing system
JP4704087B2 (ja) * 2005-03-31 2011-06-15 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
CN100416758C (zh) * 2005-12-09 2008-09-03 北京北方微电子基地设备工艺研究中心有限责任公司 一种在晶片刻蚀设备中彻底释放静电卡盘静电的方法
CN101740340B (zh) * 2008-11-25 2011-12-21 北京北方微电子基地设备工艺研究中心有限责任公司 反应腔室及半导体加工设备
JP2010199310A (ja) * 2009-02-25 2010-09-09 Sharp Corp プラズマエッチング方法
JP5835985B2 (ja) * 2010-09-16 2015-12-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US20120154974A1 (en) * 2010-12-16 2012-06-21 Applied Materials, Inc. High efficiency electrostatic chuck assembly for semiconductor wafer processing
WO2014049915A1 (ja) * 2012-09-26 2014-04-03 シャープ株式会社 基板処理装置および基板処理方法、半導体装置の製造方法
KR101623750B1 (ko) 2014-02-28 2016-05-24 가부시키가이샤 알박 플라즈마 식각 방법, 플라즈마 식각 장치, 플라즈마 처리 방법 및 플라즈마 처리 장치
JP6558901B2 (ja) 2015-01-06 2019-08-14 東京エレクトロン株式会社 プラズマ処理方法
JP6595334B2 (ja) * 2015-12-28 2019-10-23 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
US10078266B2 (en) * 2016-02-26 2018-09-18 Mattson Technology, Inc. Implanted photoresist stripping process
US10535505B2 (en) * 2016-11-11 2020-01-14 Lam Research Corporation Plasma light up suppression
US20190119815A1 (en) * 2017-10-24 2019-04-25 Applied Materials, Inc. Systems and processes for plasma filtering
WO2020123024A1 (en) * 2018-12-13 2020-06-18 Applied Materials, Inc. Methods for depositing phosphorus-doped silicon nitride films
US12100609B2 (en) 2019-04-15 2024-09-24 Applied Materials, Inc. Electrostatic chucking process
JP7482657B2 (ja) * 2020-03-17 2024-05-14 東京エレクトロン株式会社 クリーニング方法及び半導体装置の製造方法
CN113154610A (zh) * 2021-05-31 2021-07-23 北京十三和科技发展有限公司 一种具有温度调节功能的空气净化器
JP7631172B2 (ja) 2021-11-01 2025-02-18 東京エレクトロン株式会社 クリーニング方法、基板の処理方法及びプラズマ処理装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06318552A (ja) * 1993-05-10 1994-11-15 Nissin Electric Co Ltd プラズマ処理方法及び装置
JPH1027780A (ja) * 1996-07-10 1998-01-27 Nec Corp プラズマ処理方法
JP3907256B2 (ja) * 1997-01-10 2007-04-18 芝浦メカトロニクス株式会社 真空処理装置の静電チャック装置
KR100635975B1 (ko) * 2000-02-14 2006-10-20 동경 엘렉트론 주식회사 플라즈마 처리 장치 및 방법과, 플라즈마 처리 장치용 링 부재

Also Published As

Publication number Publication date
CN100414672C (zh) 2008-08-27
JP2004095909A (ja) 2004-03-25
CN1679148A (zh) 2005-10-05
TWI324361B (enrdf_load_stackoverflow) 2010-05-01
WO2004021427A1 (ja) 2004-03-11
JP4322484B2 (ja) 2009-09-02
KR20050058464A (ko) 2005-06-16
KR100782621B1 (ko) 2007-12-06
TW200410332A (en) 2004-06-16

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase