AU2003240569A1 - Method of making an soi semiconductor device having enhanced, self-aligned dielectric regions in the bulk silicon substrate - Google Patents

Method of making an soi semiconductor device having enhanced, self-aligned dielectric regions in the bulk silicon substrate

Info

Publication number
AU2003240569A1
AU2003240569A1 AU2003240569A AU2003240569A AU2003240569A1 AU 2003240569 A1 AU2003240569 A1 AU 2003240569A1 AU 2003240569 A AU2003240569 A AU 2003240569A AU 2003240569 A AU2003240569 A AU 2003240569A AU 2003240569 A1 AU2003240569 A1 AU 2003240569A1
Authority
AU
Australia
Prior art keywords
enhanced
self
making
semiconductor device
silicon substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003240569A
Other languages
English (en)
Other versions
AU2003240569A8 (en
Inventor
Mark B. Fuselier
Andy C. Wei
Derick J. Wristers
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of AU2003240569A1 publication Critical patent/AU2003240569A1/en
Publication of AU2003240569A8 publication Critical patent/AU2003240569A8/xx
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
AU2003240569A 2002-06-04 2003-05-28 Method of making an soi semiconductor device having enhanced, self-aligned dielectric regions in the bulk silicon substrate Abandoned AU2003240569A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/162,299 US6884702B2 (en) 2002-06-04 2002-06-04 Method of making an SOI semiconductor device having enhanced, self-aligned dielectric regions in the bulk silicon substrate
US10/162,299 2002-06-04
PCT/US2003/017917 WO2003103040A2 (en) 2002-06-04 2003-05-28 Method of making an soi semiconductor device having enhanced, self-aligned dielectric regions in the bulk silicon substrate

Publications (2)

Publication Number Publication Date
AU2003240569A1 true AU2003240569A1 (en) 2003-12-19
AU2003240569A8 AU2003240569A8 (en) 2003-12-19

Family

ID=29583580

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003240569A Abandoned AU2003240569A1 (en) 2002-06-04 2003-05-28 Method of making an soi semiconductor device having enhanced, self-aligned dielectric regions in the bulk silicon substrate

Country Status (8)

Country Link
US (2) US6884702B2 (https=)
EP (1) EP1509950A2 (https=)
JP (1) JP2005528797A (https=)
KR (1) KR20050004285A (https=)
CN (1) CN100367462C (https=)
AU (1) AU2003240569A1 (https=)
TW (1) TWI278025B (https=)
WO (1) WO2003103040A2 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4412710B2 (ja) * 2003-11-25 2010-02-10 キヤノン株式会社 光電変換装置の設計方法
KR20070034519A (ko) * 2004-05-27 2007-03-28 이 아이 듀폰 디 네모아 앤드 캄파니 광감성 중합체 보호층용 현상제
JP5113999B2 (ja) * 2004-09-28 2013-01-09 シャープ株式会社 水素イオン注入剥離方法
US7250351B2 (en) * 2005-04-14 2007-07-31 International Business Machines Corporation Enhanced silicon-on-insulator (SOI) transistors and methods of making enhanced SOI transistors
US20070069300A1 (en) * 2005-09-29 2007-03-29 International Business Machines Corporation Planar ultra-thin semiconductor-on-insulator channel mosfet with embedded source/drain
KR100724560B1 (ko) * 2005-11-18 2007-06-04 삼성전자주식회사 결정질 반도체층을 갖는 반도체소자, 그의 제조방법 및그의 구동방법
DE102006027969A1 (de) * 2006-06-17 2007-12-20 X-Fab Semiconductor Foundries Ag Verfahren zur selektiven Entspiegelung einer Halbleitergrenzfläche durch eine besondere Prozessführung
US7550330B2 (en) * 2006-11-29 2009-06-23 International Business Machines Corporation Deep junction SOI MOSFET with enhanced edge body contacts
US8053327B2 (en) * 2006-12-21 2011-11-08 Globalfoundries Singapore Pte. Ltd. Method of manufacture of an integrated circuit system with self-aligned isolation structures
US7998815B2 (en) * 2008-08-15 2011-08-16 Qualcomm Incorporated Shallow trench isolation
DE102009010843B4 (de) * 2009-02-27 2014-04-10 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Substrate und Halbleiterbauelemente hergestellt unter Einsatz einer Verformungstechnologie unter Anwendung eines piezoelektrischen Materials und Verfahren zum Einsatz einer derartigen Verformungstechnolgie
US20140197462A1 (en) * 2013-01-14 2014-07-17 International Rectifier Corporation III-Nitride Transistor with High Resistivity Substrate
US20140197461A1 (en) * 2013-01-14 2014-07-17 International Rectifier Corporation Semiconductor Structure Including A Spatially Confined Dielectric Region
DE102015211087B4 (de) * 2015-06-17 2019-12-05 Soitec Verfahren zur Herstellung eines Hochwiderstands-Halbleiter-auf-Isolator-Substrates
KR101921627B1 (ko) * 2017-06-16 2018-11-26 한국과학기술연구원 전계 효과 트랜지스터, 이를 구비한 바이오 센서, 전계 효과 트랜지스터의 제조방법 및 바이오 센서의 제조방법
US11189566B2 (en) * 2018-04-12 2021-11-30 International Business Machines Corporation Tight pitch via structures enabled by orthogonal and non-orthogonal merged vias
US12588282B2 (en) 2022-11-13 2026-03-24 Globalfoundries U.S. Inc. Integrated structure with trap rich regions and low resistivity regions

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04226079A (ja) 1990-04-17 1992-08-14 Canon Inc 半導体装置及びその製造方法及びそれを有する電子回路装置
US5278077A (en) * 1993-03-10 1994-01-11 Sharp Microelectronics Technology, Inc. Pin-hole patch method for implanted dielectric layer
JPH0778994A (ja) * 1993-09-07 1995-03-20 Hitachi Ltd Ｍｏｓ型半導体装置及びその製造方法
US6313505B2 (en) 1998-09-02 2001-11-06 Advanced Micro Devices, Inc. Method for forming shallow source/drain extension for MOS transistor
JP2000208393A (ja) * 1999-01-12 2000-07-28 Asahi Kasei Microsystems Kk 半導体装置の製造方法
US6103569A (en) * 1999-12-13 2000-08-15 Chartered Semiconductor Manufacturing Ltd. Method for planarizing local interconnects
TW473917B (en) 2000-03-07 2002-01-21 United Microelectronics Corp Step-like structure of silicon on insulation (SOI)
US6441436B1 (en) 2000-11-29 2002-08-27 United Microelectronics Corp. SOI device and method of fabrication
US6407428B1 (en) * 2001-06-15 2002-06-18 Advanced Micro Devices, Inc. Field effect transistor with a buried and confined metal plate to control short channel effects

Also Published As

Publication number Publication date
AU2003240569A8 (en) 2003-12-19
CN100367462C (zh) 2008-02-06
WO2003103040A2 (en) 2003-12-11
WO2003103040A3 (en) 2004-03-18
US20050151133A1 (en) 2005-07-14
CN1659687A (zh) 2005-08-24
TWI278025B (en) 2007-04-01
US20030223258A1 (en) 2003-12-04
TW200401349A (en) 2004-01-16
US7544999B2 (en) 2009-06-09
EP1509950A2 (en) 2005-03-02
KR20050004285A (ko) 2005-01-12
US6884702B2 (en) 2005-04-26
JP2005528797A (ja) 2005-09-22

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase