AU2002355718A1 - Laser spectral engineering for lithographic process - Google Patents

Laser spectral engineering for lithographic process

Info

Publication number
AU2002355718A1
AU2002355718A1 AU2002355718A AU2002355718A AU2002355718A1 AU 2002355718 A1 AU2002355718 A1 AU 2002355718A1 AU 2002355718 A AU2002355718 A AU 2002355718A AU 2002355718 A AU2002355718 A AU 2002355718A AU 2002355718 A1 AU2002355718 A1 AU 2002355718A1
Authority
AU
Australia
Prior art keywords
lithographic process
laser spectral
spectral engineering
engineering
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002355718A
Other languages
English (en)
Inventor
John M. Algots
Igor V. Fomenkov
Robert N. Jacques
Armen Kroyan
Ivan Lalovic
Jacob P. Lipcon
John A. Rule
Ronald L. Spangler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cymer Inc
Original Assignee
Cymer Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/918,773 external-priority patent/US6671294B2/en
Application filed by Cymer Inc filed Critical Cymer Inc
Publication of AU2002355718A1 publication Critical patent/AU2002355718A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • G—PHYSICS
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
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    • G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
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    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H01S3/2256—KrF, i.e. krypton fluoride is comprised for lasing around 248 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H01S3/2258—F2, i.e. molecular fluoride is comprised for lasing around 157 nm

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  • Engineering & Computer Science (AREA)
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  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Lasers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
AU2002355718A 2001-07-27 2002-07-11 Laser spectral engineering for lithographic process Abandoned AU2002355718A1 (en)

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US09/918,773 US6671294B2 (en) 1997-07-22 2001-07-27 Laser spectral engineering for lithographic process
US09/918,773 2001-07-27
US10/036,925 2001-12-21
US10/036,925 US6853653B2 (en) 1997-07-22 2001-12-21 Laser spectral engineering for lithographic process
PCT/US2002/022190 WO2003011595A2 (en) 2001-07-27 2002-07-11 Laser spectral engineering for lithographic process

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WO2003011595A2 (en) 2003-02-13
US6853653B2 (en) 2005-02-08
US20020167975A1 (en) 2002-11-14
US20050068997A1 (en) 2005-03-31
US7382815B2 (en) 2008-06-03
US7298770B2 (en) 2007-11-20
EP1412182A2 (en) 2004-04-28
JP2004537176A (ja) 2004-12-09
US20050041701A1 (en) 2005-02-24
EP1412182A4 (en) 2006-06-28
WO2003011595A3 (en) 2003-11-27

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