AU2002254232A1 - Photoresist composition - Google Patents

Photoresist composition

Info

Publication number
AU2002254232A1
AU2002254232A1 AU2002254232A AU2002254232A AU2002254232A1 AU 2002254232 A1 AU2002254232 A1 AU 2002254232A1 AU 2002254232 A AU2002254232 A AU 2002254232A AU 2002254232 A AU2002254232 A AU 2002254232A AU 2002254232 A1 AU2002254232 A1 AU 2002254232A1
Authority
AU
Australia
Prior art keywords
photoresist composition
photoresist
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002254232A
Other languages
English (en)
Inventor
Charles R. Szmanda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials International LLC
Original Assignee
Shipley Co LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shipley Co LLC filed Critical Shipley Co LLC
Publication of AU2002254232A1 publication Critical patent/AU2002254232A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/108—Polyolefin or halogen containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Steroid Compounds (AREA)
AU2002254232A 2001-03-22 2002-03-14 Photoresist composition Abandoned AU2002254232A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US27787401P 2001-03-22 2001-03-22
US60/277,874 2001-03-22
PCT/US2002/007940 WO2002077709A2 (en) 2001-03-22 2002-03-14 Photoresist composition

Publications (1)

Publication Number Publication Date
AU2002254232A1 true AU2002254232A1 (en) 2002-10-08

Family

ID=23062731

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002254232A Abandoned AU2002254232A1 (en) 2001-03-22 2002-03-14 Photoresist composition

Country Status (4)

Country Link
US (1) US6855475B2 (enExample)
JP (1) JP4554889B2 (enExample)
AU (1) AU2002254232A1 (enExample)
WO (1) WO2002077709A2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030082477A1 (en) * 2001-03-22 2003-05-01 Shipley Company, L.L.C Photoresist composition
JP2002338633A (ja) * 2001-05-21 2002-11-27 Shin Etsu Chem Co Ltd 高分子化合物、レジスト材料、及びパターン形成方法
JP4516250B2 (ja) * 2001-09-13 2010-08-04 パナソニック株式会社 パターン形成材料及びパターン形成方法
CN1527136B (zh) * 2003-03-05 2014-02-26 希普利公司 光致抗蚀剂组合物
US7700257B2 (en) * 2003-03-28 2010-04-20 Tokyo Ohka Kogyo Co., Ltd. Photoresist composition and resist pattern formation method by the use thereof
JP4644458B2 (ja) * 2003-09-30 2011-03-02 富士フイルム株式会社 平版印刷版原版および平版印刷方法
US7442487B2 (en) * 2003-12-30 2008-10-28 Intel Corporation Low outgassing and non-crosslinking series of polymers for EUV negative tone photoresists
US7608390B2 (en) * 2006-08-04 2009-10-27 International Business Machines Corporation Top antireflective coating composition containing hydrophobic and acidic groups
JP5035560B2 (ja) * 2007-07-04 2012-09-26 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
CN101802711B (zh) * 2007-07-30 2014-12-03 布鲁尔科技公司 用于光刻法的可非共价交联的材料
EP2789677A1 (en) 2013-04-12 2014-10-15 Kymi Baltic Consulting Oü Torrefaction plant, its operation and maintenance
JP6646990B2 (ja) * 2014-10-02 2020-02-14 東京応化工業株式会社 レジストパターン形成方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4207261C2 (de) 1992-03-07 2000-03-16 Clariant Gmbh Styrol-Monomere mit 2,2-Bis-trifluormethyl-oxaethano-Brückengliedern, Polymere und deren Verwendung
DE4207263A1 (de) 1992-03-07 1993-09-09 Hoechst Ag Niedermolekulare saeurespaltbare verbindungen mit 2,2-bis-trifluormethyl-oxaethano-brueckengliedern und deren verwendung
US6200725B1 (en) * 1995-06-28 2001-03-13 Fujitsu Limited Chemically amplified resist compositions and process for the formation of resist patterns
JP3297272B2 (ja) * 1995-07-14 2002-07-02 富士通株式会社 レジスト組成物及びレジストパターンの形成方法
JP3748596B2 (ja) * 1995-08-02 2006-02-22 富士通株式会社 レジスト材料及びレジストパターンの形成方法
JP3804138B2 (ja) 1996-02-09 2006-08-02 Ｊｓｒ株式会社 ＡｒＦエキシマレーザー照射用感放射線性樹脂組成物
US6057083A (en) * 1997-11-04 2000-05-02 Shipley Company, L.L.C. Polymers and photoresist compositions
JPH11286549A (ja) * 1998-02-05 1999-10-19 Canon Inc 感光性樹脂及び該感光性樹脂を用いたレジスト、該レジストを用いた露光装置及び露光方法及び該露光方法で得られた半導体装置
US6136501A (en) * 1998-08-28 2000-10-24 Shipley Company, L.L.C. Polymers and photoresist compositions comprising same
EP1131677B1 (en) 1998-09-23 2005-08-03 E.I. Dupont De Nemours And Company Photoresists, polymers and processes for microlithography
JP3305293B2 (ja) * 1999-03-09 2002-07-22 松下電器産業株式会社 パターン形成方法
EP1035441A1 (en) * 1999-03-09 2000-09-13 Matsushita Electric Industrial Co., Ltd. Pattern formation method
US6692888B1 (en) * 1999-10-07 2004-02-17 Shipley Company, L.L.C. Copolymers having nitrile and alicyclic leaving groups and photoresist compositions comprising same
KR100592010B1 (ko) * 2000-02-16 2006-06-22 신에쓰 가가꾸 고교 가부시끼가이샤 고분자 화합물, 화학 증폭 레지스트 재료 및 패턴 형성 방법
JP3861976B2 (ja) * 2000-02-16 2006-12-27 信越化学工業株式会社 高分子化合物、化学増幅レジスト材料及びパターン形成方法
US6579658B2 (en) * 2000-02-17 2003-06-17 Shin-Etsu Chemical Co., Ltd. Polymers, resist compositions and patterning process
JP3797415B2 (ja) * 2000-02-17 2006-07-19 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
US6379861B1 (en) 2000-02-22 2002-04-30 Shipley Company, L.L.C. Polymers and photoresist compositions comprising same
US6406828B1 (en) 2000-02-24 2002-06-18 Shipley Company, L.L.C. Polymer and photoresist compositions
EP1275666A4 (en) * 2000-04-04 2007-10-24 Daikin Ind Ltd NEW FLUOROPOLYMER WITH ACID-ACTIVE GROUP AND CHEMICALLY REINFORCED PHOTORESIST COMPOSITIONS THAT CONTAIN THEM
JP3502327B2 (ja) * 2000-04-19 2004-03-02 松下電器産業株式会社 パターン形成材料及びパターン形成方法
US6749986B2 (en) 2000-09-08 2004-06-15 Shipley Company, L.L.C. Polymers and photoresist compositions for short wavelength imaging
WO2002021213A2 (en) * 2000-09-08 2002-03-14 Shipley Company, L.L.C. Novel polymers and photoresist compositions for short wavelength imaging
WO2002021212A2 (en) * 2000-09-08 2002-03-14 Shipley Company, L.L.C. Fluorinated phenolic polymers and photoresist compositions comprising same
JP4201240B2 (ja) * 2001-02-22 2008-12-24 東京応化工業株式会社 新規不飽和カルボン酸エステル及びそれを用いたホトレジスト組成物
JP3904064B2 (ja) * 2001-02-28 2007-04-11 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
US20030082477A1 (en) 2001-03-22 2003-05-01 Shipley Company, L.L.C Photoresist composition
CN1263816C (zh) 2001-07-19 2006-07-12 中国科学院长春应用化学研究所 一种可降解的耐水耐油保护膜的制备方法
DE10208786B4 (de) * 2002-02-28 2006-02-09 Infineon Technologies Ag Verfahren zur Modifikation von Resiststrukturen und Resistschichten aus wässriger Phase

Also Published As

Publication number Publication date
US20030027076A1 (en) 2003-02-06
WO2002077709A3 (en) 2003-02-27
US6855475B2 (en) 2005-02-15
JP4554889B2 (ja) 2010-09-29
JP2005509176A (ja) 2005-04-07
WO2002077709A2 (en) 2002-10-03

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase