AU2002239288A1 - Laser separated die with tapered sidewalls for improved light extraction - Google Patents
Laser separated die with tapered sidewalls for improved light extractionInfo
- Publication number
- AU2002239288A1 AU2002239288A1 AU2002239288A AU3928802A AU2002239288A1 AU 2002239288 A1 AU2002239288 A1 AU 2002239288A1 AU 2002239288 A AU2002239288 A AU 2002239288A AU 3928802 A AU3928802 A AU 3928802A AU 2002239288 A1 AU2002239288 A1 AU 2002239288A1
- Authority
- AU
- Australia
- Prior art keywords
- light extraction
- improved light
- tapered sidewalls
- separated die
- laser separated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000605 extraction Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05575—Plural external layers
- H01L2224/0558—Plural external layers being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/061—Disposition
- H01L2224/06102—Disposition the bonding areas being at different heights
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
- H01L2224/1701—Structure
- H01L2224/1703—Bump connectors having different sizes, e.g. different diameters, heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US24992900P | 2000-11-17 | 2000-11-17 | |
US60/249,929 | 2000-11-17 | ||
PCT/US2001/043326 WO2002041362A2 (fr) | 2000-11-17 | 2001-11-16 | Matrice separee par laser comprenant des parois laterales tronconiques permettant une extraction lumineuse amelioree |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2002239288A1 true AU2002239288A1 (en) | 2002-05-27 |
Family
ID=22945606
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2002239288A Abandoned AU2002239288A1 (en) | 2000-11-17 | 2001-11-16 | Laser separated die with tapered sidewalls for improved light extraction |
Country Status (7)
Country | Link |
---|---|
US (1) | US7078319B2 (fr) |
EP (1) | EP1341991A4 (fr) |
JP (1) | JP2004514285A (fr) |
CN (1) | CN1305633C (fr) |
AU (1) | AU2002239288A1 (fr) |
TW (1) | TW512415B (fr) |
WO (1) | WO2002041362A2 (fr) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1241253C (zh) * | 2002-06-24 | 2006-02-08 | 丰田合成株式会社 | 半导体元件的制造方法 |
TWI248244B (en) | 2003-02-19 | 2006-01-21 | J P Sercel Associates Inc | System and method for cutting using a variable astigmatic focal beam spot |
US7419912B2 (en) | 2004-04-01 | 2008-09-02 | Cree, Inc. | Laser patterning of light emitting devices |
US7875898B2 (en) * | 2005-01-24 | 2011-01-25 | Panasonic Corporation | Semiconductor device |
JP2006324587A (ja) * | 2005-05-20 | 2006-11-30 | Toshiba Corp | 半導体発光素子 |
TWI269380B (en) * | 2005-11-14 | 2006-12-21 | Advanced Semiconductor Eng | Laser marking method for wafer |
US7843074B2 (en) * | 2006-09-12 | 2010-11-30 | Lumination Llc | Underfill for light emitting device |
WO2010129409A1 (fr) | 2009-05-05 | 2010-11-11 | 3M Innovative Properties Company | Dispositifs semi-conducteurs formés sur un substrat de croissance contenant de l'indium, utilisant des mécanismes d'appauvrissement en indium |
JP2012526394A (ja) | 2009-05-05 | 2012-10-25 | スリーエム イノベイティブ プロパティズ カンパニー | Ledとともに使用するための再発光半導体キャリア素子及び製造方法 |
CN102473817A (zh) | 2009-06-30 | 2012-05-23 | 3M创新有限公司 | 无镉再发光半导体构造 |
JP2012532453A (ja) | 2009-06-30 | 2012-12-13 | スリーエム イノベイティブ プロパティズ カンパニー | 調節可能な色温度を備えた白色光エレクトロルミネセンスデバイス |
US8304976B2 (en) | 2009-06-30 | 2012-11-06 | 3M Innovative Properties Company | Electroluminescent devices with color adjustment based on current crowding |
WO2014041463A2 (fr) | 2012-09-17 | 2014-03-20 | Koninklijke Philips N.V. | Dispositif électroluminescent incluant un substrat mis en forme |
WO2014069880A1 (fr) * | 2012-10-30 | 2014-05-08 | Seoul Semiconductor Co., Ltd. | Lentille et module d'émission de lumière pour éclairage par la surface |
TWI618268B (zh) | 2012-12-07 | 2018-03-11 | 晶元光電股份有限公司 | 發光裝置 |
US9099481B2 (en) | 2013-03-15 | 2015-08-04 | Semiconductor Components Industries, Llc | Methods of laser marking semiconductor substrates |
CN105378950A (zh) * | 2013-04-11 | 2016-03-02 | 皇家飞利浦有限公司 | 顶发射式半导体发光器件 |
DE102016213540A1 (de) * | 2016-07-25 | 2018-01-25 | Trumpf Werkzeugmaschinen Gmbh + Co. Kg | Verfahren zum Erzeugen von schrägen Vorsprüngen oder Aussparungen an einer Schnittflanke eines plattenförmigen Werkstücks und zugehöriges Computerprogrammprodukt |
CN109807471B (zh) * | 2019-02-01 | 2024-03-26 | 佛山科学技术学院 | 一种激光打标装置及方法 |
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US3824678A (en) | 1970-08-31 | 1974-07-23 | North American Rockwell | Process for laser scribing beam lead semiconductor wafers |
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US6696008B2 (en) * | 2000-05-25 | 2004-02-24 | Westar Photonics Inc. | Maskless laser beam patterning ablation of multilayered structures with continuous monitoring of ablation |
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-
2001
- 2001-11-16 EP EP01987030A patent/EP1341991A4/fr not_active Withdrawn
- 2001-11-16 US US10/432,081 patent/US7078319B2/en not_active Expired - Fee Related
- 2001-11-16 CN CNB018191223A patent/CN1305633C/zh not_active Expired - Fee Related
- 2001-11-16 AU AU2002239288A patent/AU2002239288A1/en not_active Abandoned
- 2001-11-16 WO PCT/US2001/043326 patent/WO2002041362A2/fr active Application Filing
- 2001-11-16 TW TW090128510A patent/TW512415B/zh not_active IP Right Cessation
- 2001-11-16 JP JP2002543672A patent/JP2004514285A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP1341991A2 (fr) | 2003-09-10 |
US7078319B2 (en) | 2006-07-18 |
TW512415B (en) | 2002-12-01 |
WO2002041362A9 (fr) | 2003-11-06 |
EP1341991A4 (fr) | 2007-05-30 |
WO2002041362A2 (fr) | 2002-05-23 |
JP2004514285A (ja) | 2004-05-13 |
CN1476365A (zh) | 2004-02-18 |
US20040118825A1 (en) | 2004-06-24 |
CN1305633C (zh) | 2007-03-21 |
WO2002041362A3 (fr) | 2003-01-23 |
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