AU2002237016A1 - Method of forming a pre-metal dielectric film on a semiconductor substrate - Google Patents

Method of forming a pre-metal dielectric film on a semiconductor substrate

Info

Publication number
AU2002237016A1
AU2002237016A1 AU2002237016A AU3701602A AU2002237016A1 AU 2002237016 A1 AU2002237016 A1 AU 2002237016A1 AU 2002237016 A AU2002237016 A AU 2002237016A AU 3701602 A AU3701602 A AU 3701602A AU 2002237016 A1 AU2002237016 A1 AU 2002237016A1
Authority
AU
Australia
Prior art keywords
forming
semiconductor substrate
dielectric film
metal dielectric
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002237016A
Other languages
English (en)
Inventor
Amit S. Kelkar
Michael D. Whiteman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Atmel Corp
Original Assignee
Atmel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Corp filed Critical Atmel Corp
Publication of AU2002237016A1 publication Critical patent/AU2002237016A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31608—Deposition of SiO2
    • H01L21/31612—Deposition of SiO2 on a silicon body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31625—Deposition of boron or phosphorus doped silicon oxide, e.g. BSG, PSG, BPSG
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
AU2002237016A 2000-08-29 2001-07-18 Method of forming a pre-metal dielectric film on a semiconductor substrate Abandoned AU2002237016A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/650,961 US6489254B1 (en) 2000-08-29 2000-08-29 Method of forming pre-metal dielectric film on a semiconductor substrate including first layer of undoped oxide of high ozone:TEOS volume ratio and second layer of low ozone doped BPSG
US09/650,961 2000-08-29
PCT/US2001/022855 WO2002019411A2 (fr) 2000-08-29 2001-07-18 Procede de formation d'un film dielectrique premetallique sur un substrat a semiconducteur

Publications (1)

Publication Number Publication Date
AU2002237016A1 true AU2002237016A1 (en) 2002-03-13

Family

ID=24611034

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002237016A Abandoned AU2002237016A1 (en) 2000-08-29 2001-07-18 Method of forming a pre-metal dielectric film on a semiconductor substrate

Country Status (10)

Country Link
US (2) US6489254B1 (fr)
EP (1) EP1316107A2 (fr)
JP (1) JP2004517467A (fr)
KR (1) KR20030064746A (fr)
CN (1) CN1244140C (fr)
AU (1) AU2002237016A1 (fr)
CA (1) CA2417236A1 (fr)
NO (1) NO20030902L (fr)
TW (1) TW503481B (fr)
WO (1) WO2002019411A2 (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW479315B (en) * 2000-10-31 2002-03-11 Applied Materials Inc Continuous depostiton process
JP3586268B2 (ja) * 2002-07-09 2004-11-10 株式会社東芝 半導体装置及びその製造方法
US6905940B2 (en) * 2002-09-19 2005-06-14 Applied Materials, Inc. Method using TEOS ramp-up during TEOS/ozone CVD for improved gap-fill
US7335609B2 (en) * 2004-08-27 2008-02-26 Applied Materials, Inc. Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials
US7456116B2 (en) * 2002-09-19 2008-11-25 Applied Materials, Inc. Gap-fill depositions in the formation of silicon containing dielectric materials
US7431967B2 (en) 2002-09-19 2008-10-07 Applied Materials, Inc. Limited thermal budget formation of PMD layers
US7141483B2 (en) * 2002-09-19 2006-11-28 Applied Materials, Inc. Nitrous oxide anneal of TEOS/ozone CVD for improved gapfill
JP2004214610A (ja) * 2002-12-20 2004-07-29 Renesas Technology Corp 半導体装置の製造方法
CN1309046C (zh) * 2002-12-25 2007-04-04 旺宏电子股份有限公司 存储器的制造方法
US7241703B2 (en) * 2003-05-30 2007-07-10 Matsushita Electric Industrial Co., Ltd. Film forming method for semiconductor device
US7528051B2 (en) * 2004-05-14 2009-05-05 Applied Materials, Inc. Method of inducing stresses in the channel region of a transistor
JP4649899B2 (ja) * 2004-07-13 2011-03-16 パナソニック株式会社 半導体記憶装置およびその製造方法
US7642171B2 (en) 2004-08-04 2010-01-05 Applied Materials, Inc. Multi-step anneal of thin films for film densification and improved gap-fill
US7300886B1 (en) * 2005-06-08 2007-11-27 Spansion Llc Interlayer dielectric for charge loss improvement
US8435898B2 (en) 2007-04-05 2013-05-07 Freescale Semiconductor, Inc. First inter-layer dielectric stack for non-volatile memory
CN102637628A (zh) * 2011-02-10 2012-08-15 上海宏力半导体制造有限公司 降低介质电容的方法
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
KR20210111355A (ko) * 2019-01-31 2021-09-10 램 리써치 코포레이션 고급 반도체 애플리케이션들을 위한 저 응력 막들

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5166101A (en) 1989-09-28 1992-11-24 Applied Materials, Inc. Method for forming a boron phosphorus silicate glass composite layer on a semiconductor wafer
US5314845A (en) * 1989-09-28 1994-05-24 Applied Materials, Inc. Two step process for forming void-free oxide layer over stepped surface of semiconductor wafer
JPH0680657B2 (ja) 1989-12-27 1994-10-12 株式会社半導体プロセス研究所 半導体装置の製造方法
JPH05235184A (ja) * 1992-02-26 1993-09-10 Nec Corp 半導体装置の多層配線構造体の製造方法
JP3093429B2 (ja) * 1992-04-28 2000-10-03 日本電気株式会社 半導体装置の製造方法
US5271972A (en) * 1992-08-17 1993-12-21 Applied Materials, Inc. Method for depositing ozone/TEOS silicon oxide films of reduced surface sensitivity
JP2809018B2 (ja) 1992-11-26 1998-10-08 日本電気株式会社 半導体装置およびその製造方法
JP2705513B2 (ja) * 1993-06-08 1998-01-28 日本電気株式会社 半導体集積回路装置の製造方法
US6013584A (en) 1997-02-19 2000-01-11 Applied Materials, Inc. Methods and apparatus for forming HDP-CVD PSG film used for advanced pre-metal dielectric layer applications
US5869403A (en) 1997-03-14 1999-02-09 Micron Technology, Inc. Semiconductor processing methods of forming a contact opening to a semiconductor substrate
JP3050193B2 (ja) * 1997-11-12 2000-06-12 日本電気株式会社 半導体装置及びその製造方法
JP2994616B2 (ja) 1998-02-12 1999-12-27 キヤノン販売株式会社 下地表面改質方法及び半導体装置の製造方法
US6084357A (en) 1998-04-10 2000-07-04 Janning; John L. Series connected light string with filament shunting
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JP3208376B2 (ja) * 1998-05-20 2001-09-10 株式会社半導体プロセス研究所 成膜方法及び半導体装置の製造方法
US6090675A (en) * 1999-04-02 2000-07-18 Taiwan Semiconductor Manufacturing Company Formation of dielectric layer employing high ozone:tetraethyl-ortho-silicate ratios during chemical vapor deposition
US6294483B1 (en) * 2000-05-09 2001-09-25 Taiwan Semiconductor Manufacturing Company Method for preventing delamination of APCVD BPSG films

Also Published As

Publication number Publication date
KR20030064746A (ko) 2003-08-02
USRE40507E1 (en) 2008-09-16
JP2004517467A (ja) 2004-06-10
EP1316107A2 (fr) 2003-06-04
WO2002019411A2 (fr) 2002-03-07
US6489254B1 (en) 2002-12-03
TW503481B (en) 2002-09-21
WO2002019411A3 (fr) 2002-07-25
NO20030902D0 (no) 2003-02-26
CA2417236A1 (fr) 2002-03-07
NO20030902L (no) 2003-02-26
CN1244140C (zh) 2006-03-01
CN1449575A (zh) 2003-10-15

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