AU2002213401A1 - Semiconductor structures having a compliant substrate - Google Patents
Semiconductor structures having a compliant substrateInfo
- Publication number
- AU2002213401A1 AU2002213401A1 AU2002213401A AU1340102A AU2002213401A1 AU 2002213401 A1 AU2002213401 A1 AU 2002213401A1 AU 2002213401 A AU2002213401 A AU 2002213401A AU 1340102 A AU1340102 A AU 1340102A AU 2002213401 A1 AU2002213401 A1 AU 2002213401A1
- Authority
- AU
- Australia
- Prior art keywords
- semiconductor structures
- compliant substrate
- compliant
- substrate
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/02447—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02513—Microstructure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US72156600A | 2000-11-22 | 2000-11-22 | |
US09/721,566 | 2000-11-22 | ||
PCT/US2001/032597 WO2002045140A2 (en) | 2000-11-22 | 2001-10-18 | Semiconductor structures having a compliant substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2002213401A1 true AU2002213401A1 (en) | 2002-06-11 |
Family
ID=24898468
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2002213401A Abandoned AU2002213401A1 (en) | 2000-11-22 | 2001-10-18 | Semiconductor structures having a compliant substrate |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP1348231A2 (en) |
JP (1) | JP2004515074A (en) |
KR (1) | KR20030051868A (en) |
AU (1) | AU2002213401A1 (en) |
TW (1) | TW531786B (en) |
WO (1) | WO2002045140A2 (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8227820B2 (en) * | 2005-02-09 | 2012-07-24 | The Regents Of The University Of California | Semiconductor light-emitting device |
KR100664986B1 (en) | 2004-10-29 | 2007-01-09 | 삼성전기주식회사 | Nitride based semiconductor device using nanorods and method for manufacturing the same |
US8946674B2 (en) | 2005-08-31 | 2015-02-03 | University Of Florida Research Foundation, Inc. | Group III-nitrides on Si substrates using a nanostructured interlayer |
RU2326993C2 (en) * | 2006-07-25 | 2008-06-20 | Самсунг Электро-Меканикс Ко., Лтд. | Method of nitride monocrystal growth on silicon plate, nitride semi-conductor light emitting diode, which is produced with its utilisation, and method of such production |
US8222057B2 (en) | 2006-08-29 | 2012-07-17 | University Of Florida Research Foundation, Inc. | Crack free multilayered devices, methods of manufacture thereof and articles comprising the same |
FR2921200B1 (en) * | 2007-09-18 | 2009-12-18 | Centre Nat Rech Scient | EPITAXIC MONOLITHIC SEMICONDUCTOR HETEROSTRUCTURES AND PROCESS FOR THEIR MANUFACTURE |
US9312436B2 (en) | 2011-05-16 | 2016-04-12 | Kabushiki Kaisha Toshiba | Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer |
US20120292648A1 (en) * | 2011-05-16 | 2012-11-22 | Kabushiki Kaisha Toshiba | Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer |
FR3079534B1 (en) * | 2018-03-28 | 2022-03-18 | Soitec Silicon On Insulator | METHOD FOR MANUFACTURING A MONOCRYSTALLINE LAYER OF GAAS MATERIAL AND SUBSTRATE FOR GROWTH BY EPITAXIS OF A MONOCRYSTALLINE LAYER OF GAAS MATERIAL |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0548072A (en) * | 1991-08-12 | 1993-02-26 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor element |
US5270298A (en) * | 1992-03-05 | 1993-12-14 | Bell Communications Research, Inc. | Cubic metal oxide thin film epitaxially grown on silicon |
US5478653A (en) * | 1994-04-04 | 1995-12-26 | Guenzer; Charles S. | Bismuth titanate as a template layer for growth of crystallographically oriented silicon |
US5741724A (en) * | 1996-12-27 | 1998-04-21 | Motorola | Method of growing gallium nitride on a spinel substrate |
US6103403A (en) * | 1997-05-15 | 2000-08-15 | University Of Kentucky Research Foundation Intellectual Property Development | Clathrate structure for electronic and electro-optic applications |
US6113690A (en) * | 1998-06-08 | 2000-09-05 | Motorola, Inc. | Method of preparing crystalline alkaline earth metal oxides on a Si substrate |
-
2001
- 2001-10-18 EP EP01981781A patent/EP1348231A2/en not_active Withdrawn
- 2001-10-18 JP JP2002547210A patent/JP2004515074A/en active Pending
- 2001-10-18 KR KR10-2003-7006940A patent/KR20030051868A/en not_active Application Discontinuation
- 2001-10-18 WO PCT/US2001/032597 patent/WO2002045140A2/en not_active Application Discontinuation
- 2001-10-18 AU AU2002213401A patent/AU2002213401A1/en not_active Abandoned
- 2001-11-05 TW TW090127404A patent/TW531786B/en active
Also Published As
Publication number | Publication date |
---|---|
KR20030051868A (en) | 2003-06-25 |
EP1348231A2 (en) | 2003-10-01 |
TW531786B (en) | 2003-05-11 |
WO2002045140A2 (en) | 2002-06-06 |
JP2004515074A (en) | 2004-05-20 |
WO2002045140A3 (en) | 2003-02-06 |
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