US6107653A
(en)
|
1997-06-24 |
2000-08-22 |
Massachusetts Institute Of Technology |
Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization
|
US7227176B2
(en)
*
|
1998-04-10 |
2007-06-05 |
Massachusetts Institute Of Technology |
Etch stop layer system
|
US6265289B1
(en)
*
|
1998-06-10 |
2001-07-24 |
North Carolina State University |
Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby
|
US6177688B1
(en)
|
1998-11-24 |
2001-01-23 |
North Carolina State University |
Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates
|
US6521514B1
(en)
*
|
1999-11-17 |
2003-02-18 |
North Carolina State University |
Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates
|
US6750130B1
(en)
|
2000-01-20 |
2004-06-15 |
Amberwave Systems Corporation |
Heterointegration of materials using deposition and bonding
|
US6602613B1
(en)
|
2000-01-20 |
2003-08-05 |
Amberwave Systems Corporation |
Heterointegration of materials using deposition and bonding
|
US6403451B1
(en)
*
|
2000-02-09 |
2002-06-11 |
Noerh Carolina State University |
Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts
|
US6261929B1
(en)
*
|
2000-02-24 |
2001-07-17 |
North Carolina State University |
Methods of forming a plurality of semiconductor layers using spaced trench arrays
|
US6627974B2
(en)
*
|
2000-06-19 |
2003-09-30 |
Nichia Corporation |
Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate
|
US6794311B2
(en)
|
2000-07-14 |
2004-09-21 |
Applied Materials Inc. |
Method and apparatus for treating low k dielectric layers to reduce diffusion
|
JP5095064B2
(en)
|
2000-08-04 |
2012-12-12 |
ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア |
Semiconductor film having nitride layer deposited on silicon substrate and method for manufacturing the same
|
DE60125952T2
(en)
*
|
2000-08-16 |
2007-08-02 |
Massachusetts Institute Of Technology, Cambridge |
METHOD FOR THE PRODUCTION OF A SEMICONDUCTOR ARTICLE BY MEANS OF GRADUAL EPITACTIC GROWTH
|
US6649480B2
(en)
|
2000-12-04 |
2003-11-18 |
Amberwave Systems Corporation |
Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs
|
US20020100942A1
(en)
*
|
2000-12-04 |
2002-08-01 |
Fitzgerald Eugene A. |
CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs
|
US6649287B2
(en)
*
|
2000-12-14 |
2003-11-18 |
Nitronex Corporation |
Gallium nitride materials and methods
|
US6518079B2
(en)
*
|
2000-12-20 |
2003-02-11 |
Lumileds Lighting, U.S., Llc |
Separation method for gallium nitride devices on lattice-mismatched substrates
|
US7052979B2
(en)
*
|
2001-02-14 |
2006-05-30 |
Toyoda Gosei Co., Ltd. |
Production method for semiconductor crystal and semiconductor luminous element
|
US6611002B2
(en)
|
2001-02-23 |
2003-08-26 |
Nitronex Corporation |
Gallium nitride material devices and methods including backside vias
|
US6956250B2
(en)
|
2001-02-23 |
2005-10-18 |
Nitronex Corporation |
Gallium nitride materials including thermally conductive regions
|
US7233028B2
(en)
*
|
2001-02-23 |
2007-06-19 |
Nitronex Corporation |
Gallium nitride material devices and methods of forming the same
|
US6703688B1
(en)
|
2001-03-02 |
2004-03-09 |
Amberwave Systems Corporation |
Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
|
US6830976B2
(en)
|
2001-03-02 |
2004-12-14 |
Amberwave Systems Corproation |
Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
|
US6724008B2
(en)
|
2001-03-02 |
2004-04-20 |
Amberwave Systems Corporation |
Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
|
US6723661B2
(en)
|
2001-03-02 |
2004-04-20 |
Amberwave Systems Corporation |
Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
|
JP2002280314A
(en)
*
|
2001-03-22 |
2002-09-27 |
Toyoda Gosei Co Ltd |
Manufacturing method of iii nitride compound semiconductor group, and the iii nitride compound semiconductor element based thereon
|
US20040169192A1
(en)
*
|
2001-06-04 |
2004-09-02 |
Hisaki Kato |
Method for producing group III nitride compounds semiconductor
|
US6599361B2
(en)
*
|
2001-06-18 |
2003-07-29 |
National Research Council Of Canada |
GaN selective growth on SiC substrates by ammonia-source MBE
|
US7067849B2
(en)
|
2001-07-17 |
2006-06-27 |
Lg Electronics Inc. |
Diode having high brightness and method thereof
|
JP4865166B2
(en)
*
|
2001-08-30 |
2012-02-01 |
新電元工業株式会社 |
Transistor manufacturing method, diode manufacturing method
|
DE10142656A1
(en)
*
|
2001-08-31 |
2003-03-27 |
Osram Opto Semiconductors Gmbh |
Production of a III-V nitride semiconductor layer based on gallium nitride comprises applying a mask layer on a substrate to form masked regions and non-masked regions, and growing nitride semiconductor layer over the non-masked regions
|
US20030066816A1
(en)
*
|
2001-09-17 |
2003-04-10 |
Schultz Gary A. |
Uniform patterning for deep reactive ion etching
|
JP3864870B2
(en)
*
|
2001-09-19 |
2007-01-10 |
住友電気工業株式会社 |
Single crystal gallium nitride substrate, growth method thereof, and manufacturing method thereof
|
US6831292B2
(en)
|
2001-09-21 |
2004-12-14 |
Amberwave Systems Corporation |
Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
|
AU2002341803A1
(en)
|
2001-09-24 |
2003-04-07 |
Amberwave Systems Corporation |
Rf circuits including transistors having strained material layers
|
US6949395B2
(en)
|
2001-10-22 |
2005-09-27 |
Oriol, Inc. |
Method of making diode having reflective layer
|
US7148520B2
(en)
|
2001-10-26 |
2006-12-12 |
Lg Electronics Inc. |
Diode having vertical structure and method of manufacturing the same
|
US6617261B2
(en)
*
|
2001-12-18 |
2003-09-09 |
Xerox Corporation |
Structure and method for fabricating GaN substrates from trench patterned GaN layers on sapphire substrates
|
US7060632B2
(en)
|
2002-03-14 |
2006-06-13 |
Amberwave Systems Corporation |
Methods for fabricating strained layers on semiconductor substrates
|
US6818532B2
(en)
*
|
2002-04-09 |
2004-11-16 |
Oriol, Inc. |
Method of etching substrates
|
DE10218498B4
(en)
*
|
2002-04-25 |
2007-02-22 |
Osram Opto Semiconductors Gmbh |
Method for producing a semiconductor layer and electronic component
|
US20030227057A1
(en)
|
2002-06-07 |
2003-12-11 |
Lochtefeld Anthony J. |
Strained-semiconductor-on-insulator device structures
|
US6995430B2
(en)
|
2002-06-07 |
2006-02-07 |
Amberwave Systems Corporation |
Strained-semiconductor-on-insulator device structures
|
US6982474B2
(en)
|
2002-06-25 |
2006-01-03 |
Amberwave Systems Corporation |
Reacted conductive gate electrodes
|
US6995032B2
(en)
|
2002-07-19 |
2006-02-07 |
Cree, Inc. |
Trench cut light emitting diodes and methods of fabricating same
|
WO2004019391A2
(en)
|
2002-08-23 |
2004-03-04 |
Amberwave Systems Corporation |
Semiconductor heterostructures having reduced dislocation pile-ups and related methods
|
US20040043584A1
(en)
*
|
2002-08-27 |
2004-03-04 |
Thomas Shawn G. |
Semiconductor device and method of making same
|
US6783592B2
(en)
*
|
2002-10-10 |
2004-08-31 |
The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration |
Lateral movement of screw dislocations during homoepitaxial growth and devices yielded therefrom free of the detrimental effects of screw dislocations
|
US7135720B2
(en)
*
|
2003-08-05 |
2006-11-14 |
Nitronex Corporation |
Gallium nitride material transistors and methods associated with the same
|
US7071498B2
(en)
*
|
2003-12-17 |
2006-07-04 |
Nitronex Corporation |
Gallium nitride material devices including an electrode-defining layer and methods of forming the same
|
US20050145851A1
(en)
*
|
2003-12-17 |
2005-07-07 |
Nitronex Corporation |
Gallium nitride material structures including isolation regions and methods
|
JP4540347B2
(en)
*
|
2004-01-05 |
2010-09-08 |
シャープ株式会社 |
Nitride semiconductor laser device and manufacturing method thereof
|
JP4201725B2
(en)
*
|
2004-02-20 |
2008-12-24 |
シャープ株式会社 |
Manufacturing method of nitride semiconductor light emitting device
|
JP3884439B2
(en)
*
|
2004-03-02 |
2007-02-21 |
株式会社東芝 |
Semiconductor device
|
US7157297B2
(en)
*
|
2004-05-10 |
2007-01-02 |
Sharp Kabushiki Kaisha |
Method for fabrication of semiconductor device
|
US7084441B2
(en)
*
|
2004-05-20 |
2006-08-01 |
Cree, Inc. |
Semiconductor devices having a hybrid channel layer, current aperture transistors and methods of fabricating same
|
JP4651312B2
(en)
*
|
2004-06-10 |
2011-03-16 |
シャープ株式会社 |
Manufacturing method of semiconductor device
|
US7339205B2
(en)
|
2004-06-28 |
2008-03-04 |
Nitronex Corporation |
Gallium nitride materials and methods associated with the same
|
US7361946B2
(en)
*
|
2004-06-28 |
2008-04-22 |
Nitronex Corporation |
Semiconductor device-based sensors
|
US7687827B2
(en)
*
|
2004-07-07 |
2010-03-30 |
Nitronex Corporation |
III-nitride materials including low dislocation densities and methods associated with the same
|
US20060017064A1
(en)
*
|
2004-07-26 |
2006-01-26 |
Saxler Adam W |
Nitride-based transistors having laterally grown active region and methods of fabricating same
|
US20060214289A1
(en)
*
|
2004-10-28 |
2006-09-28 |
Nitronex Corporation |
Gallium nitride material-based monolithic microwave integrated circuits
|
US7709859B2
(en)
*
|
2004-11-23 |
2010-05-04 |
Cree, Inc. |
Cap layers including aluminum nitride for nitride-based transistors
|
US7456443B2
(en)
*
|
2004-11-23 |
2008-11-25 |
Cree, Inc. |
Transistors having buried n-type and p-type regions beneath the source region
|
US7393733B2
(en)
|
2004-12-01 |
2008-07-01 |
Amberwave Systems Corporation |
Methods of forming hybrid fin field-effect transistor structures
|
US7247889B2
(en)
|
2004-12-03 |
2007-07-24 |
Nitronex Corporation |
III-nitride material structures including silicon substrates
|
US7355215B2
(en)
*
|
2004-12-06 |
2008-04-08 |
Cree, Inc. |
Field effect transistors (FETs) having multi-watt output power at millimeter-wave frequencies
|
US7161194B2
(en)
*
|
2004-12-06 |
2007-01-09 |
Cree, Inc. |
High power density and/or linearity transistors
|
US7465967B2
(en)
|
2005-03-15 |
2008-12-16 |
Cree, Inc. |
Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions
|
US7626217B2
(en)
*
|
2005-04-11 |
2009-12-01 |
Cree, Inc. |
Composite substrates of conductive and insulating or semi-insulating group III-nitrides for group III-nitride devices
|
US8575651B2
(en)
|
2005-04-11 |
2013-11-05 |
Cree, Inc. |
Devices having thick semi-insulating epitaxial gallium nitride layer
|
CN1697205A
(en)
*
|
2005-04-15 |
2005-11-16 |
南昌大学 |
Method for preparing film of indium-gallium-aluminum-nitrogen on silicon substrate and light emitting device
|
US7544963B2
(en)
*
|
2005-04-29 |
2009-06-09 |
Cree, Inc. |
Binary group III-nitride based high electron mobility transistors
|
US7615774B2
(en)
*
|
2005-04-29 |
2009-11-10 |
Cree.Inc. |
Aluminum free group III-nitride based high electron mobility transistors
|
US7365374B2
(en)
|
2005-05-03 |
2008-04-29 |
Nitronex Corporation |
Gallium nitride material structures including substrates and methods associated with the same
|
US20060267043A1
(en)
*
|
2005-05-27 |
2006-11-30 |
Emerson David T |
Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
|
TW200703463A
(en)
*
|
2005-05-31 |
2007-01-16 |
Univ California |
Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO)
|
US8168000B2
(en)
*
|
2005-06-15 |
2012-05-01 |
International Rectifier Corporation |
III-nitride semiconductor device fabrication
|
US9331192B2
(en)
*
|
2005-06-29 |
2016-05-03 |
Cree, Inc. |
Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same
|
US20070018198A1
(en)
*
|
2005-07-20 |
2007-01-25 |
Brandes George R |
High electron mobility electronic device structures comprising native substrates and methods for making the same
|
CN101326642A
(en)
*
|
2005-10-04 |
2008-12-17 |
尼特罗奈克斯公司 |
Gallium nitride material transistors and methods for wideband applications
|
US9608102B2
(en)
*
|
2005-12-02 |
2017-03-28 |
Infineon Technologies Americas Corp. |
Gallium nitride material devices and associated methods
|
US7566913B2
(en)
|
2005-12-02 |
2009-07-28 |
Nitronex Corporation |
Gallium nitride material devices including conductive regions and methods associated with the same
|
JP2009519202A
(en)
|
2005-12-12 |
2009-05-14 |
キーマ テクノロジーズ, インク. |
Group III nitride product and method for producing the same
|
US7592211B2
(en)
|
2006-01-17 |
2009-09-22 |
Cree, Inc. |
Methods of fabricating transistors including supported gate electrodes
|
US7709269B2
(en)
|
2006-01-17 |
2010-05-04 |
Cree, Inc. |
Methods of fabricating transistors including dielectrically-supported gate electrodes
|
KR101203692B1
(en)
*
|
2006-02-16 |
2012-11-21 |
삼성전자주식회사 |
Substrate for PENDEO epitaxy and manufacturing method for the same
|
GB2436398B
(en)
*
|
2006-03-23 |
2011-08-24 |
Univ Bath |
Growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials
|
US20100269819A1
(en)
*
|
2006-08-14 |
2010-10-28 |
Sievers Robert E |
Human Powered Dry Powder Inhaler and Dry Powder Inhaler Compositions
|
TWI319893B
(en)
*
|
2006-08-31 |
2010-01-21 |
|
Nitride semiconductor substrate, method for forming a nitride semiconductor layer and method for separating the nitride semiconductor layer from the substrate
|
TW200845135A
(en)
*
|
2006-12-12 |
2008-11-16 |
Univ California |
Crystal growth of M-plane and semi-polar planes of (Al, In, Ga, B)N on various substrates
|
GB0701069D0
(en)
*
|
2007-01-19 |
2007-02-28 |
Univ Bath |
Nanostructure template and production of semiconductors using the template
|
US7692198B2
(en)
*
|
2007-02-19 |
2010-04-06 |
Alcatel-Lucent Usa Inc. |
Wide-bandgap semiconductor devices
|
US7745848B1
(en)
|
2007-08-15 |
2010-06-29 |
Nitronex Corporation |
Gallium nitride material devices and thermal designs thereof
|
US8652947B2
(en)
*
|
2007-09-26 |
2014-02-18 |
Wang Nang Wang |
Non-polar III-V nitride semiconductor and growth method
|
US8217498B2
(en)
*
|
2007-10-18 |
2012-07-10 |
Corning Incorporated |
Gallium nitride semiconductor device on SOI and process for making same
|
US7928448B2
(en)
*
|
2007-12-04 |
2011-04-19 |
Philips Lumileds Lighting Company, Llc |
III-nitride light emitting device including porous semiconductor layer
|
US8026581B2
(en)
*
|
2008-02-05 |
2011-09-27 |
International Rectifier Corporation |
Gallium nitride material devices including diamond regions and methods associated with the same
|
US8343824B2
(en)
*
|
2008-04-29 |
2013-01-01 |
International Rectifier Corporation |
Gallium nitride material processing and related device structures
|
WO2010062659A1
(en)
*
|
2008-10-28 |
2010-06-03 |
Athenaeum, Llc |
Epitaxial film assembly system & method
|
TWI384548B
(en)
*
|
2008-11-10 |
2013-02-01 |
Univ Nat Central |
Manufacturing method of nitride crystalline film, nitride film and substrate structure
|
KR101563686B1
(en)
*
|
2009-01-15 |
2015-10-27 |
삼성전자주식회사 |
Method of manufacturing semiconductor light emitting device
|
US8313967B1
(en)
*
|
2009-01-21 |
2012-11-20 |
Stc.Unm |
Cubic phase, nitrogen-based compound semiconductor films epitaxially grown on a grooved Si <001> substrate
|
KR101640830B1
(en)
*
|
2009-08-17 |
2016-07-22 |
삼성전자주식회사 |
Substrate structure and manufacturing method of the same
|
US8105852B2
(en)
*
|
2010-01-15 |
2012-01-31 |
Koninklijke Philips Electronics N.V. |
Method of forming a composite substrate and growing a III-V light emitting device over the composite substrate
|
TWI562195B
(en)
*
|
2010-04-27 |
2016-12-11 |
Pilegrowth Tech S R L |
Dislocation and stress management by mask-less processes using substrate patterning and methods for device fabrication
|
US8592292B2
(en)
|
2010-09-02 |
2013-11-26 |
National Semiconductor Corporation |
Growth of multi-layer group III-nitride buffers on large-area silicon substrates and other substrates
|
JP2012089612A
(en)
*
|
2010-10-18 |
2012-05-10 |
Sumitomo Electric Ind Ltd |
Composite substrate having silicon carbide substrate
|
US8841207B2
(en)
|
2011-04-08 |
2014-09-23 |
Lux Material Co., Ltd. |
Reusable substrates for electronic device fabrication and methods thereof
|
US9142400B1
(en)
|
2012-07-17 |
2015-09-22 |
Stc.Unm |
Method of making a heteroepitaxial layer on a seed area
|
US8956960B2
(en)
*
|
2012-11-16 |
2015-02-17 |
Infineon Technologies Ag |
Method for stress reduced manufacturing semiconductor devices
|
US9574135B2
(en)
*
|
2013-08-22 |
2017-02-21 |
Nanoco Technologies Ltd. |
Gas phase enhancement of emission color quality in solid state LEDs
|
US20150372096A1
(en)
*
|
2014-06-20 |
2015-12-24 |
Ishiang Shih |
High Electron Mobility Transistors and Integrated Circuits with Improved Feature Uniformity and Reduced defects for Microwave and Millimetre Wave Applications
|
CN106575670B
(en)
|
2014-09-18 |
2020-10-16 |
英特尔公司 |
Wurtzite heteroepitaxial structures with sloped sidewall facets for defect propagation control in silicon CMOS compatible semiconductor devices
|
EP3198649A4
(en)
*
|
2014-09-25 |
2018-05-16 |
Intel Corporation |
Iii-n epitaxial device structures on free standing silicon mesas
|
US10573647B2
(en)
|
2014-11-18 |
2020-02-25 |
Intel Corporation |
CMOS circuits using n-channel and p-channel gallium nitride transistors
|
KR102309482B1
(en)
|
2014-12-18 |
2021-10-07 |
인텔 코포레이션 |
N-channel gallium nitride transistors
|
EP3298628A4
(en)
|
2015-05-19 |
2019-05-22 |
INTEL Corporation |
Semiconductor devices with raised doped crystalline structures
|
KR102349040B1
(en)
|
2015-06-26 |
2022-01-10 |
인텔 코포레이션 |
Hetero-epitaxial structures with high temperature stable substrate interface material
|
US9806182B2
(en)
|
2015-09-08 |
2017-10-31 |
Macom Technology Solutions Holdings, Inc. |
Parasitic channel mitigation using elemental diboride diffusion barrier regions
|
US9673281B2
(en)
|
2015-09-08 |
2017-06-06 |
Macom Technology Solutions Holdings, Inc. |
Parasitic channel mitigation using rare-earth oxide and/or rare-earth nitride diffusion barrier regions
|
US9773898B2
(en)
|
2015-09-08 |
2017-09-26 |
Macom Technology Solutions Holdings, Inc. |
III-nitride semiconductor structures comprising spatially patterned implanted species
|
US9799520B2
(en)
|
2015-09-08 |
2017-10-24 |
Macom Technology Solutions Holdings, Inc. |
Parasitic channel mitigation via back side implantation
|
US9627473B2
(en)
|
2015-09-08 |
2017-04-18 |
Macom Technology Solutions Holdings, Inc. |
Parasitic channel mitigation in III-nitride material semiconductor structures
|
US20170069721A1
(en)
|
2015-09-08 |
2017-03-09 |
M/A-Com Technology Solutions Holdings, Inc. |
Parasitic channel mitigation using silicon carbide diffusion barrier regions
|
US9704705B2
(en)
|
2015-09-08 |
2017-07-11 |
Macom Technology Solutions Holdings, Inc. |
Parasitic channel mitigation via reaction with active species
|
US10211294B2
(en)
|
2015-09-08 |
2019-02-19 |
Macom Technology Solutions Holdings, Inc. |
III-nitride semiconductor structures comprising low atomic mass species
|
WO2017111869A1
(en)
|
2015-12-24 |
2017-06-29 |
Intel Corporation |
Transition metal dichalcogenides (tmdcs) over iii-nitride heteroepitaxial layers
|
US9960127B2
(en)
|
2016-05-18 |
2018-05-01 |
Macom Technology Solutions Holdings, Inc. |
High-power amplifier package
|
US10134658B2
(en)
|
2016-08-10 |
2018-11-20 |
Macom Technology Solutions Holdings, Inc. |
High power transistors
|
US11233053B2
(en)
|
2017-09-29 |
2022-01-25 |
Intel Corporation |
Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication
|
US10707308B2
(en)
|
2017-12-24 |
2020-07-07 |
HangZhou HaiCun Information Technology Co., Ltd. |
Hetero-epitaxial output device array
|
US11038023B2
(en)
|
2018-07-19 |
2021-06-15 |
Macom Technology Solutions Holdings, Inc. |
III-nitride material semiconductor structures on conductive silicon substrates
|
US20220123166A1
(en)
*
|
2019-01-16 |
2022-04-21 |
The Regents Of The University Of California |
Method for removal of devices using a trench
|
CN110957407B
(en)
*
|
2019-12-13 |
2021-04-09 |
深圳第三代半导体研究院 |
Substrate, LED and manufacturing method thereof
|
FR3118304B1
(en)
*
|
2020-12-22 |
2023-06-23 |
Commissariat Energie Atomique |
Process for producing a layer based on III-N materials
|