AU1421388A - Process and device for the surface treatment of semiconductors by particle bombardment - Google Patents

Process and device for the surface treatment of semiconductors by particle bombardment

Info

Publication number
AU1421388A
AU1421388A AU14213/88A AU1421388A AU1421388A AU 1421388 A AU1421388 A AU 1421388A AU 14213/88 A AU14213/88 A AU 14213/88A AU 1421388 A AU1421388 A AU 1421388A AU 1421388 A AU1421388 A AU 1421388A
Authority
AU
Australia
Prior art keywords
semiconductors
surface treatment
particle bombardment
bombardment
particle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU14213/88A
Other languages
English (en)
Inventor
Hans Oechsner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=6323319&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=AU1421388(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Individual filed Critical Individual
Publication of AU1421388A publication Critical patent/AU1421388A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H10P32/1204—
    • H10P50/20—

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Plasma Technology (AREA)
AU14213/88A 1987-03-18 1988-03-16 Process and device for the surface treatment of semiconductors by particle bombardment Abandoned AU1421388A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3708717 1987-03-18
DE19873708717 DE3708717A1 (de) 1987-03-18 1987-03-18 Verfahren und vorrichtung zur bearbeitung von festkoerperoberflaechen durch teilchenbeschuss

Publications (1)

Publication Number Publication Date
AU1421388A true AU1421388A (en) 1988-10-10

Family

ID=6323319

Family Applications (1)

Application Number Title Priority Date Filing Date
AU14213/88A Abandoned AU1421388A (en) 1987-03-18 1988-03-16 Process and device for the surface treatment of semiconductors by particle bombardment

Country Status (7)

Country Link
US (1) US5156703A (cg-RX-API-DMAC10.html)
EP (1) EP0349556B1 (cg-RX-API-DMAC10.html)
JP (1) JP2771205B2 (cg-RX-API-DMAC10.html)
KR (1) KR890700919A (cg-RX-API-DMAC10.html)
AU (1) AU1421388A (cg-RX-API-DMAC10.html)
DE (2) DE3708717A1 (cg-RX-API-DMAC10.html)
WO (1) WO1988007262A1 (cg-RX-API-DMAC10.html)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3834318A1 (de) * 1988-10-08 1990-04-12 Leybold Ag Vorrichtung zum aufbringen dielektrischer oder metallischer werkstoffe
DE4025396A1 (de) * 1990-08-10 1992-02-13 Leybold Ag Einrichtung fuer die herstellung eines plasmas
US5334264A (en) * 1992-06-30 1994-08-02 Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College Titanium plasma nitriding intensified by thermionic emission source
DE4233895C2 (de) * 1992-10-08 1996-11-28 Juergen Prof Dr Engemann Vorrichtung zur Behandlung von durch einen Wickelmechanismus bewegten bahnförmigen Materialien mittels eines reaktiven bzw. nichtreaktiven, durch Hochfrequenz- oder Pulsentladung erzeugten Niederdruckplasmas
DE4301189C2 (de) * 1993-01-19 2000-12-14 Leybold Ag Vorrichtung zum Beschichten von Substraten
DE4301188C2 (de) * 1993-01-19 2001-05-31 Leybold Ag Vorrichtung zum Beschichten oder Ätzen von Substraten
KR0170456B1 (ko) * 1993-07-16 1999-03-30 세끼사와 다까시 반도체 장치 및 그 제조방법
US5614055A (en) * 1993-08-27 1997-03-25 Applied Materials, Inc. High density plasma CVD and etching reactor
US5811022A (en) * 1994-11-15 1998-09-22 Mattson Technology, Inc. Inductive plasma reactor
DE19503205C1 (de) * 1995-02-02 1996-07-11 Muegge Electronic Gmbh Vorrichtung zur Erzeugung von Plasma
DE19546826C1 (de) * 1995-12-15 1997-04-03 Fraunhofer Ges Forschung Verfahren und Einrichtung zur Vorbehandlung von Substraten
EP0909445A1 (en) * 1996-05-31 1999-04-21 Akashic Memories Corporation Recording media having protective overcoats of highly tetrahedral amorphous carbon and methods for their production
US5858477A (en) * 1996-12-10 1999-01-12 Akashic Memories Corporation Method for producing recording media having protective overcoats of highly tetrahedral amorphous carbon
EP1115648A1 (de) * 1998-09-23 2001-07-18 Stefan Fascko Verfahren zur herstellung von nanometerstrukturen auf halbleiteroberflächen
US6423976B1 (en) * 1999-05-28 2002-07-23 Applied Materials, Inc. Ion implanter and a method of implanting ions
JP2001023959A (ja) * 1999-07-05 2001-01-26 Mitsubishi Electric Corp プラズマ処理装置
US7232767B2 (en) * 2003-04-01 2007-06-19 Mattson Technology, Inc. Slotted electrostatic shield modification for improved etch and CVD process uniformity
DE10317027A1 (de) * 2003-04-11 2004-11-11 Leybold Optics Gmbh Hochfrequenz-Plasmastrahlquelle und Verfahren zum Bestrahlen einer Oberfläche
DE10331926A1 (de) * 2003-07-15 2005-02-24 Leybold Optics Gmbh Hochfrequenzquelle zur Erzeugung eines durch Magnetfelder geformten Plasmastrahls und Verfahren zum Bestrahlen einer Oberfläche
US20060249370A1 (en) * 2003-09-15 2006-11-09 Makoto Nagashima Back-biased face target sputtering based liquid crystal display device
DE102004011118B4 (de) * 2004-03-08 2009-09-24 Leybold Optics Gmbh Extraktionselektrode mit Lochblendenmuster für eine Plasmastrahlquelle
US7695590B2 (en) 2004-03-26 2010-04-13 Applied Materials, Inc. Chemical vapor deposition plasma reactor having plural ion shower grids
US7244474B2 (en) * 2004-03-26 2007-07-17 Applied Materials, Inc. Chemical vapor deposition plasma process using an ion shower grid
US20070205096A1 (en) * 2006-03-06 2007-09-06 Makoto Nagashima Magnetron based wafer processing
DE102006062710A1 (de) * 2006-04-27 2007-11-15 Ipt Ionen- Und Plasmatechnik Gmbh Plasmaquelle
DE102006020291A1 (de) * 2006-04-27 2007-10-31 Ipt Ionen- Und Plasmatechnik Gmbh Plasmaquelle
US8454810B2 (en) * 2006-07-14 2013-06-04 4D-S Pty Ltd. Dual hexagonal shaped plasma source
DE102007051444B4 (de) * 2007-10-25 2012-11-08 Von Ardenne Anlagentechnik Gmbh Verfahren und Vorrichtung zum Trockenätzen von kontinuierlich bewegten Materialien
US8698400B2 (en) 2009-04-28 2014-04-15 Leybold Optics Gmbh Method for producing a plasma beam and plasma source
DE102009018912A1 (de) * 2009-04-28 2010-11-18 Leybold Optics Gmbh Verfahren zur Erzeugung eines Plasmastrahls sowie Plasmaquelle
US9287092B2 (en) 2009-05-01 2016-03-15 Advanced Energy Industries, Inc. Method and apparatus for controlling ion energy distribution
US9435029B2 (en) 2010-08-29 2016-09-06 Advanced Energy Industries, Inc. Wafer chucking system for advanced plasma ion energy processing systems
US9287086B2 (en) 2010-04-26 2016-03-15 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution
US9767988B2 (en) 2010-08-29 2017-09-19 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
US11615941B2 (en) 2009-05-01 2023-03-28 Advanced Energy Industries, Inc. System, method, and apparatus for controlling ion energy distribution in plasma processing systems
US9309594B2 (en) 2010-04-26 2016-04-12 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution of a projected plasma
US9362089B2 (en) 2010-08-29 2016-06-07 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
FR2965697B1 (fr) 2010-09-30 2014-01-03 Astrium Sas Procede et dispositif pour la formation d'un faisceau plasma.
US10225919B2 (en) * 2011-06-30 2019-03-05 Aes Global Holdings, Pte. Ltd Projected plasma source
KR102025540B1 (ko) 2012-08-28 2019-09-26 에이이에스 글로벌 홀딩스 피티이 리미티드 넓은 다이내믹 레인지 이온 에너지 바이어스 제어； 고속 이온 에너지 스위칭； 이온 에너지 제어와 펄스동작 바이어스 서플라이； 및 가상 전면 패널
US9210790B2 (en) * 2012-08-28 2015-12-08 Advanced Energy Industries, Inc. Systems and methods for calibrating a switched mode ion energy distribution system
US9685297B2 (en) 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
KR102235442B1 (ko) * 2014-06-30 2021-04-01 삼성전자주식회사 스퍼터링 장치 및 방법
US11814718B2 (en) 2015-03-31 2023-11-14 Bühler Alzenau Gmbh Method for producing coated substrates
FR3046520B1 (fr) * 2015-12-30 2018-06-22 Centre National De La Recherche Scientifique - Cnrs Systeme de generation de faisceau plasma a derive d'electrons fermee et propulseur comprenant un tel systeme
KR102383703B1 (ko) 2016-03-05 2022-04-08 어플라이드 머티어리얼스, 인코포레이티드 물리 기상 증착 프로세스들에서 이온 프랙션을 제어하기 위한 방법들 및 장치
US11437221B2 (en) 2017-11-17 2022-09-06 Advanced Energy Industries, Inc. Spatial monitoring and control of plasma processing environments
TWI792598B (zh) 2017-11-17 2023-02-11 新加坡商Aes 全球公司 用於在空間域和時間域上控制基板上的電漿處理之系統和方法，及相關的電腦可讀取媒體
JP2021503702A (ja) 2017-11-17 2021-02-12 エーイーエス グローバル ホールディングス， プライベート リミテッド プラズマ処理システムにおける変調供給源の改良された印加
EP3711080B1 (en) 2017-11-17 2023-06-21 AES Global Holdings, Pte. Ltd. Synchronized pulsing of plasma processing source and substrate bias
US12505986B2 (en) 2017-11-17 2025-12-23 Advanced Energy Industries, Inc. Synchronization of plasma processing components
US12230476B2 (en) 2017-11-17 2025-02-18 Advanced Energy Industries, Inc. Integrated control of a plasma processing system
WO2019154490A1 (en) * 2018-02-07 2019-08-15 Applied Materials, Inc. Deposition apparatus, method of coating a flexible substrate and flexible substrate having a coating
WO2020161139A2 (en) * 2019-02-06 2020-08-13 Evatec Ag Method of producing ions and apparatus
CN114222958B (zh) 2019-07-12 2024-03-19 先进工程解决方案全球控股私人有限公司 具有单个受控开关的偏置电源
US12125674B2 (en) 2020-05-11 2024-10-22 Advanced Energy Industries, Inc. Surface charge and power feedback and control using a switch mode bias system
EP4006948A1 (de) 2020-11-26 2022-06-01 Bühler AG Extraktionsgitter
US11942309B2 (en) 2022-01-26 2024-03-26 Advanced Energy Industries, Inc. Bias supply with resonant switching
US12046448B2 (en) 2022-01-26 2024-07-23 Advanced Energy Industries, Inc. Active switch on time control for bias supply
US11670487B1 (en) 2022-01-26 2023-06-06 Advanced Energy Industries, Inc. Bias supply control and data processing
US11978613B2 (en) 2022-09-01 2024-05-07 Advanced Energy Industries, Inc. Transition control in a bias supply

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1550853A (en) * 1975-10-06 1979-08-22 Hitachi Ltd Apparatus and process for plasma treatment
JPS53112066A (en) * 1977-03-11 1978-09-30 Fujitsu Ltd Plasma treatment apparatus
FR2402301A1 (fr) * 1977-09-02 1979-03-30 Commissariat Energie Atomique Appareil de micro-usinage par erosion ionique utilisant une source de plasma
JPS5531154A (en) * 1978-08-28 1980-03-05 Hitachi Ltd Plasma etching apparatus
DD150479A1 (de) * 1979-01-29 1981-09-02 Hans Bruchlos Verfahren und vorrichtung zum aufbringen von duennen schichten
JPS5617432A (en) * 1979-07-20 1981-02-19 Fujitsu Ltd Circuit control system
CA1159012A (en) * 1980-05-02 1983-12-20 Seitaro Matsuo Plasma deposition apparatus
JPS5740932A (en) * 1980-08-26 1982-03-06 Nec Corp Device for plasma processing
JPS58100430A (ja) * 1981-12-11 1983-06-15 Hitachi Ltd プラズマ処理装置
EP0106497B1 (en) * 1982-09-10 1988-06-01 Nippon Telegraph And Telephone Corporation Ion shower apparatus
JPS59126778A (ja) * 1983-01-11 1984-07-21 Tokyo Denshi Kagaku Kabushiki プラズマエツチング方法及びその装置
JPS60211942A (ja) * 1984-04-06 1985-10-24 Hitachi Ltd プラズマ処理装置
JPS62248226A (ja) * 1986-04-21 1987-10-29 Mitsubishi Electric Corp 薄膜加工装置
JPS63144521A (ja) * 1986-12-09 1988-06-16 Matsushita Electric Ind Co Ltd 半導体製造装置
JPS6428922A (en) * 1987-07-24 1989-01-31 Citizen Watch Co Ltd Dry etching device
JPS63211630A (ja) * 1988-01-29 1988-09-02 Hitachi Ltd プラズマ処理装置

Also Published As

Publication number Publication date
DE3708717A1 (de) 1988-09-29
WO1988007262A1 (fr) 1988-09-22
EP0349556A1 (de) 1990-01-10
JPH02502593A (ja) 1990-08-16
DE3885739D1 (de) 1993-12-23
DE3708717C2 (cg-RX-API-DMAC10.html) 1990-12-20
EP0349556B1 (de) 1993-11-18
KR890700919A (ko) 1989-04-28
JP2771205B2 (ja) 1998-07-02
US5156703A (en) 1992-10-20

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