ATE549439T1 - Verfahren zur herstellung eines fluoridkristalls - Google Patents

Verfahren zur herstellung eines fluoridkristalls

Info

Publication number
ATE549439T1
ATE549439T1 AT04770823T AT04770823T ATE549439T1 AT E549439 T1 ATE549439 T1 AT E549439T1 AT 04770823 T AT04770823 T AT 04770823T AT 04770823 T AT04770823 T AT 04770823T AT E549439 T1 ATE549439 T1 AT E549439T1
Authority
AT
Austria
Prior art keywords
producing
fluoride crystal
fluorides
fluoride
crystal
Prior art date
Application number
AT04770823T
Other languages
English (en)
Inventor
Tomohiko Satonaga
Hirohisa Kikuyama
Tsuguo Fukuda
Original Assignee
Stella Chemifa Kabushiki Kaisha
Fukuda Crystal Lab Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stella Chemifa Kabushiki Kaisha, Fukuda Crystal Lab Ltd filed Critical Stella Chemifa Kabushiki Kaisha
Application granted granted Critical
Publication of ATE549439T1 publication Critical patent/ATE549439T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/12—Halides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Glass Compositions (AREA)
AT04770823T 2003-07-17 2004-07-20 Verfahren zur herstellung eines fluoridkristalls ATE549439T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003276347 2003-07-17
PCT/JP2004/010312 WO2005007943A1 (ja) 2003-07-17 2004-07-20 フッ化物結晶の製造方法

Publications (1)

Publication Number Publication Date
ATE549439T1 true ATE549439T1 (de) 2012-03-15

Family

ID=34074584

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04770823T ATE549439T1 (de) 2003-07-17 2004-07-20 Verfahren zur herstellung eines fluoridkristalls

Country Status (8)

Country Link
US (1) US7413606B2 (de)
EP (1) EP1666644B1 (de)
JP (1) JP4738174B2 (de)
KR (1) KR20060033004A (de)
CN (1) CN100347346C (de)
AT (1) ATE549439T1 (de)
TW (1) TW200510581A (de)
WO (1) WO2005007943A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4456071B2 (ja) * 2003-04-23 2010-04-28 ステラケミファ株式会社 フッ化物結晶の製造装置
JP2007197269A (ja) * 2006-01-27 2007-08-09 Nec Tokin Corp 結晶育成坩堝及び単結晶育成方法
CN104611764B (zh) * 2015-01-21 2017-10-31 华中科技大学 一种微向下提拉晶体生长炉
CN105112990B (zh) * 2015-10-12 2018-07-06 山东大学 一种微下拉定向生长异型近器件倍频晶体的方法
CN105112993B (zh) * 2015-10-12 2017-10-20 山东大学 一种调节微下拉晶体生长温度梯度的装置及方法
RU2599672C1 (ru) * 2015-11-24 2016-10-10 федеральное государственное автономное образовательное учреждение высшего образования "Казанский (Приволжский) федеральный университет" (ФГАОУ ВО КФУ) Устройство для выращивания монокристаллов фторидов и способ их получения

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3915656A (en) * 1971-06-01 1975-10-28 Tyco Laboratories Inc Apparatus for growing crystalline bodies from the melt
JPS5113568A (en) * 1974-07-24 1976-02-03 Hitachi Ltd Handotaiketsushono seizohohooyobi seizosochi
DE2635373C2 (de) * 1975-08-08 1982-04-15 PCUK-Produits Chimiques Ugine Kuhlmann, 92400 Courbevoie, Hauts-de-Seine Verfahren und Vorrichtung zur kontinuierlichen Züchtung von Einkristallen bestimmter Form
FR2321326A1 (fr) * 1975-08-08 1977-03-18 Ugine Kuhlmann Procede de fabrication en continu de monocristaux preformes
FR2359639A2 (fr) * 1976-07-27 1978-02-24 Ugine Kuhlmann Dispositif pour fabriquer des tubes et des ensembles de petits cylindres monocristallins
SU1592414A1 (ru) * 1986-11-26 1990-09-15 Vni Pk T I Elektrotermicheskog Cпocoб bыpaщиbahия пpoфилиpobahhыx kpиctaллob tугoплabkиx coeдиhehий и уctpoйctbo для eгo ocущectbлehия
CN1023240C (zh) * 1990-03-31 1993-12-22 中国科学院上海硅酸盐研究所 高抗辐照氟化钡晶体的生长技术
JP3668276B2 (ja) * 1995-03-22 2005-07-06 日本碍子株式会社 酸化物単結晶の製造方法および装置
JP3825127B2 (ja) * 1997-03-27 2006-09-20 日本碍子株式会社 単結晶の育成方法および装置
JP2003119096A (ja) * 2001-10-15 2003-04-23 Nec Tokin Corp 多元系フッ化物単結晶およびその作製方法
JP4456071B2 (ja) * 2003-04-23 2010-04-28 ステラケミファ株式会社 フッ化物結晶の製造装置

Also Published As

Publication number Publication date
JP4738174B2 (ja) 2011-08-03
JPWO2005007943A1 (ja) 2006-11-16
CN1823183A (zh) 2006-08-23
EP1666644B1 (de) 2012-03-14
US20070095273A1 (en) 2007-05-03
US7413606B2 (en) 2008-08-19
TW200510581A (en) 2005-03-16
CN100347346C (zh) 2007-11-07
EP1666644A1 (de) 2006-06-07
TWI350321B (de) 2011-10-11
WO2005007943A1 (ja) 2005-01-27
EP1666644A4 (de) 2009-05-20
KR20060033004A (ko) 2006-04-18

Similar Documents

Publication Publication Date Title
ATE373119T1 (de) Verfahren und vorrichtung zur kristallzüchtung
ATE494403T1 (de) HOCHREINER GLASARTIGER QUARZTIEGEL ZUM ZIEHEN EINES EINKRISTALL-SILICIUMBLOCKS MIT GROßEM DURCHMESSER
WO2009138918A3 (en) Apparatus for waking up a user
DE602004004095D1 (de) Tiegel für eine vorrichtung zur herstellung eines kristallinen blockes, und verfahren zu seiner herstellung
MX2009013735A (es) Crecimiento de algas para biocombustibles.
ATE508215T1 (de) Verfahren und anlage mit saathalter zur züchtung von siliziumkarbideinkristalle
ATE549439T1 (de) Verfahren zur herstellung eines fluoridkristalls
TW200710293A (en) Method and apparatus for producing group iii nitride crystal
WO2009025340A1 (ja) Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法
DE602006010650D1 (de) ch Epitaxie
ATE335871T1 (de) Verfahren und vorrichtung zur züchtung von mehreren kristallbändern aus einem einzelnen tiegel
EP1557487A3 (de) Verfahren zur Herstellung eines Substrats aus GaN-Kristall
ATE552364T1 (de) Quarzglastiegel und verfahren zum ziehen von siliciumeinkristall mit dem quarzglastiegel
Mock et al. Micro-optodes in sea ice: a new approach to investigate oxygen dynamics during sea ice formation
ATE550828T1 (de) Verfahren und vorrichtung zur regelung der regelungssteilheit
TW200519240A (en) Lithium tantalate substrate and production thereof
WO2010062419A3 (en) Diamond bodies grown on sic substrates and associated methods
EP1905872A4 (de) Quarzglastiegel zum hochziehen eines siliciumeinkristalls und verfahren zur herstellung des quarzglastiegels
WO2011072278A3 (en) Germanium ingots/wafers having low micro-pit density (mpd) as well as systems and methods for manufacturing same
ATE451209T1 (de) Verwendung eines spiralförmigen werkzeugs und verfahren zur herstellung eines flächenelements mit mindestens einem versteifungsteil
CN108286072B (zh) 化合物一氟化四硼酸钠和一氟化四硼酸钠非线性光学晶体及制备方法和用途
ATE458808T1 (de) Verfahren zur herstellung einer voll entwickelten natürlichen killerzelle
EP0949361A3 (de) Silizium-Impfkristall für das Czochralski-Verfahren und Verfahren zur Herstellung von einem Silizium-Einkristall
ATE523490T1 (de) Verfahren zur herstellung von pleuromutilinen
EP2045371A3 (de) Verfahren und Vorrichtung zur Herstellung eines Einkristallblock-Halbleiters mit sehr wenigen Fehlern