ATE537556T1 - Verfahren zum füllen von lücken und verfahren zur abscheidung von materialien unter verwendung einer hochdichten chemischen plasma- gasphasenabscheidung - Google Patents

Verfahren zum füllen von lücken und verfahren zur abscheidung von materialien unter verwendung einer hochdichten chemischen plasma- gasphasenabscheidung

Info

Publication number
ATE537556T1
ATE537556T1 AT04784663T AT04784663T ATE537556T1 AT E537556 T1 ATE537556 T1 AT E537556T1 AT 04784663 T AT04784663 T AT 04784663T AT 04784663 T AT04784663 T AT 04784663T AT E537556 T1 ATE537556 T1 AT E537556T1
Authority
AT
Austria
Prior art keywords
sub
deposition
filling gaps
layer
vapor deposition
Prior art date
Application number
AT04784663T
Other languages
English (en)
Inventor
Neal Rueger
William Budge
Weimin Li
Gurtej Sandhu
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE537556T1 publication Critical patent/ATE537556T1/de

Links

Classifications

    • H10P14/6336—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • H10P14/6682—
    • H10P14/6922—
    • H10W10/014—
    • H10W10/17—
    • H10W20/098—
    • H10P14/69215—
    • H10P14/6923—

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Element Separation (AREA)
AT04784663T 2003-09-23 2004-09-20 Verfahren zum füllen von lücken und verfahren zur abscheidung von materialien unter verwendung einer hochdichten chemischen plasma- gasphasenabscheidung ATE537556T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/669,671 US7056833B2 (en) 2003-09-23 2003-09-23 Methods of filling gaps and methods of depositing materials using high density plasma chemical vapor deposition
PCT/US2004/030875 WO2005031841A2 (en) 2003-09-23 2004-09-20 Methods of filling gaps and methods of depositing materials using high density plasma chemical vapor deposition

Publications (1)

Publication Number Publication Date
ATE537556T1 true ATE537556T1 (de) 2011-12-15

Family

ID=34313738

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04784663T ATE537556T1 (de) 2003-09-23 2004-09-20 Verfahren zum füllen von lücken und verfahren zur abscheidung von materialien unter verwendung einer hochdichten chemischen plasma- gasphasenabscheidung

Country Status (8)

Country Link
US (3) US7056833B2 (de)
EP (1) EP1665354B1 (de)
JP (1) JP4356747B2 (de)
KR (1) KR100759649B1 (de)
CN (1) CN100454497C (de)
AT (1) ATE537556T1 (de)
TW (1) TWI248638B (de)
WO (1) WO2005031841A2 (de)

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US7279770B2 (en) * 2004-08-26 2007-10-09 Micron Technology, Inc. Isolation techniques for reducing dark current in CMOS image sensors
US8021992B2 (en) * 2005-09-01 2011-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. High aspect ratio gap fill application using high density plasma chemical vapor deposition
US9257274B2 (en) 2010-04-15 2016-02-09 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
US20130288485A1 (en) * 2012-04-30 2013-10-31 Applied Materials, Inc. Densification for flowable films
US20140070225A1 (en) * 2012-09-07 2014-03-13 Apple Inc. Hydrogenation and Crystallization of Polycrystalline Silicon
US9401423B2 (en) * 2013-07-16 2016-07-26 Globalfoundries Inc. Enhancing transistor performance and reliability by incorporating deuterium into a strained capping layer
CN105825906B (zh) * 2016-03-30 2017-12-08 中国科学院上海应用物理研究所 一种放射性含氟废液水泥固化方法
US11508584B2 (en) 2019-06-17 2022-11-22 Applied Materials, Inc. Deuterium-containing films
JP2023504257A (ja) 2019-12-02 2023-02-02 ラム リサーチ コーポレーション Ｉｎ－ｓｉｔｕでのｐｅｃｖｄによるキャップ層
CN115050632A (zh) * 2021-03-09 2022-09-13 中微半导体设备(上海)股份有限公司 一种半导体结构的形成方法及半导体结构
US20240087882A1 (en) * 2022-09-09 2024-03-14 Applied Materials, Inc. Fluorine-doped silicon-containing materials
WO2026010781A1 (en) * 2024-07-03 2026-01-08 Lam Research Corporation Doped dielectric packaging film
US12421594B1 (en) * 2024-08-02 2025-09-23 Applied Materials, Inc. Pulsed voltage waveform delivery for deposition

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JP2933177B2 (ja) * 1991-02-25 1999-08-09 キヤノン株式会社 非単結晶炭化珪素半導体、及びその製造方法、及びそれを用いた半導体装置
US6106678A (en) * 1996-03-29 2000-08-22 Lam Research Corporation Method of high density plasma CVD gap-filling
US6232216B1 (en) * 1996-04-16 2001-05-15 Nippon Telegraph And Telephone Corporation Thin film forming method
US6077791A (en) * 1996-12-16 2000-06-20 Motorola Inc. Method of forming passivation layers using deuterium containing reaction gases
JP3599513B2 (ja) * 1996-12-27 2004-12-08 松下電器産業株式会社 薄膜トランジスタの製造方法
US6023093A (en) * 1997-04-28 2000-02-08 Lucent Technologies Inc. Deuterated direlectric and polysilicon film-based semiconductor devices and method of manufacture thereof
US6025280A (en) * 1997-04-28 2000-02-15 Lucent Technologies Inc. Use of SiD4 for deposition of ultra thin and controllable oxides
US5872058A (en) * 1997-06-17 1999-02-16 Novellus Systems, Inc. High aspect ratio gapfill process by using HDP
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US6395150B1 (en) * 1998-04-01 2002-05-28 Novellus Systems, Inc. Very high aspect ratio gapfill using HDP
US6200911B1 (en) * 1998-04-21 2001-03-13 Applied Materials, Inc. Method and apparatus for modifying the profile of narrow, high-aspect-ratio gaps using differential plasma power
US6030881A (en) * 1998-05-05 2000-02-29 Novellus Systems, Inc. High throughput chemical vapor deposition process capable of filling high aspect ratio structures
US6255197B1 (en) * 1998-06-10 2001-07-03 Jim Mitzel Hydrogen annealing method and apparatus
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KR20000057747A (ko) * 1999-01-14 2000-09-25 루센트 테크놀러지스 인크 실리콘 집적 회로의 제조 방법
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US6614977B2 (en) * 2001-07-12 2003-09-02 Little Optics, Inc. Use of deuterated gases for the vapor deposition of thin films for low-loss optical devices and waveguides
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US6982207B2 (en) * 2003-07-11 2006-01-03 Micron Technology, Inc. Methods for filling high aspect ratio trenches in semiconductor layers

Also Published As

Publication number Publication date
US20050064729A1 (en) 2005-03-24
CN1856870A (zh) 2006-11-01
TW200524008A (en) 2005-07-16
WO2005031841A2 (en) 2005-04-07
EP1665354B1 (de) 2011-12-14
US20060134924A1 (en) 2006-06-22
EP1665354A2 (de) 2006-06-07
US7273793B2 (en) 2007-09-25
JP2007507111A (ja) 2007-03-22
JP4356747B2 (ja) 2009-11-04
US7056833B2 (en) 2006-06-06
TWI248638B (en) 2006-02-01
US7202183B2 (en) 2007-04-10
KR20060095972A (ko) 2006-09-05
WO2005031841A3 (en) 2005-09-01
US20050196976A1 (en) 2005-09-08
CN100454497C (zh) 2009-01-21
KR100759649B1 (ko) 2007-09-17

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