ATE523904T1 - Magnetowiderstandsvorrichtung - Google Patents

Magnetowiderstandsvorrichtung

Info

Publication number
ATE523904T1
ATE523904T1 AT08157888T AT08157888T ATE523904T1 AT E523904 T1 ATE523904 T1 AT E523904T1 AT 08157888 T AT08157888 T AT 08157888T AT 08157888 T AT08157888 T AT 08157888T AT E523904 T1 ATE523904 T1 AT E523904T1
Authority
AT
Austria
Prior art keywords
channel
magnetic resistance
resistance device
face
substantially perpendicular
Prior art date
Application number
AT08157888T
Other languages
English (en)
Inventor
Susumu Ogawa
Andrew Troup
David Williams
Hiroshi Fukuda
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of ATE523904T1 publication Critical patent/ATE523904T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0005—Geometrical arrangement of magnetic sensor elements; Apparatus combining different magnetic sensor types
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0052—Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/095—Magnetoresistive devices extraordinary magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3993—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures in semi-conductors
AT08157888T 2008-06-09 2008-06-09 Magnetowiderstandsvorrichtung ATE523904T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP08157888A EP2133931B1 (de) 2008-06-09 2008-06-09 Magnetowiderstandsvorrichtung

Publications (1)

Publication Number Publication Date
ATE523904T1 true ATE523904T1 (de) 2011-09-15

Family

ID=39832554

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08157888T ATE523904T1 (de) 2008-06-09 2008-06-09 Magnetowiderstandsvorrichtung

Country Status (4)

Country Link
US (1) US8094417B2 (de)
EP (1) EP2133931B1 (de)
JP (1) JP5275144B2 (de)
AT (1) ATE523904T1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2317581B1 (de) 2009-10-30 2012-03-07 Hitachi, Ltd. Magnetowiderstandsvorrichtung
JP5998380B2 (ja) * 2011-03-07 2016-09-28 国立研究開発法人産業技術総合研究所 半導体基板、半導体装置および半導体基板の製造方法
US11867775B2 (en) * 2019-03-04 2024-01-09 Government Of The United States Of America Systems, devices, and methods for resistance metrology using graphene with superconducting components

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4065797A (en) * 1974-12-20 1977-12-27 Matsushita Electric Industrial Co., Ltd. Multi-element magnetic head
US4523243A (en) * 1982-05-24 1985-06-11 Storage Technology Corporation Magnetoresistive transducer using an independent recessed electromagnetic bias
JPS6169183A (ja) * 1985-08-30 1986-04-09 Nec Corp Ｍｏｓ型ホール素子の製造方法
US4978938A (en) * 1988-12-23 1990-12-18 General Motors Corporation Magnetoresistor
CA1303246C (en) * 1988-12-23 1992-06-09 Dale Lee Partin Magnetoresistor with accumulation layer
DE59108800D1 (de) * 1991-12-21 1997-08-28 Itt Ind Gmbh Deutsche Offsetkompensierter Hallsensor
US5652445A (en) * 1995-04-21 1997-07-29 Johnson; Mark B. Hybrid hall effect device and method of operation
JP4408334B2 (ja) 2001-03-08 2010-02-03 株式会社日立グローバルストレージテクノロジーズ 磁気ヘッド素子の研磨装置
US7016167B2 (en) * 2002-11-29 2006-03-21 Hitachi Global Storage Technologies Netherlands B.V. Spin valve transistor with stabilization and method for producing the same
US7136264B2 (en) * 2003-04-10 2006-11-14 Hitachi Global Storage Technologies Netherlands, B.V. Use of gold leads in lead overlaid type of GMR sensor
JP4287905B2 (ja) * 2003-07-31 2009-07-01 光照 木村 半導体磁気センサとこれを用いた磁気計測装置
JP2006019728A (ja) * 2004-06-30 2006-01-19 Hitachi Global Storage Technologies Netherlands Bv 交換結合された反強磁性／強磁性構造による垂直磁気バイアスを有する異常磁気抵抗センサ
US7203036B2 (en) * 2004-07-30 2007-04-10 Hitachi Global Storage Technologies Netherlands B.V. Planar extraordinary magnetoresistance sensor
EP1868254B1 (de) 2006-06-13 2010-03-24 Hitachi Ltd. Magnetowiderstandsvorrichtung

Also Published As

Publication number Publication date
EP2133931A1 (de) 2009-12-16
JP5275144B2 (ja) 2013-08-28
JP2009295987A (ja) 2009-12-17
US8094417B2 (en) 2012-01-10
EP2133931B1 (de) 2011-09-07
US20090303638A1 (en) 2009-12-10

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Legal Events

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