WO2016188448A3 - 一种碳化硅mosfet器件及其制备方法 - Google Patents

一种碳化硅mosfet器件及其制备方法 Download PDF

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WO2016188448A3
WO2016188448A3 PCT/CN2016/083450 CN2016083450W WO2016188448A3 WO 2016188448 A3 WO2016188448 A3 WO 2016188448A3 CN 2016083450 W CN2016083450 W CN 2016083450W WO 2016188448 A3 WO2016188448 A3 WO 2016188448A3
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gate oxide
silicon carbide
oxide layer
preparation
oxide layers
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PCT/CN2016/083450
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French (fr)
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WO2016188448A2 (zh
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高云斌
李诚瞻
刘国友
吴煜东
史晶晶
赵艳黎
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株洲中车时代电气股份有限公司
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Priority to US15/576,652 priority Critical patent/US10475896B2/en
Publication of WO2016188448A2 publication Critical patent/WO2016188448A2/zh
Publication of WO2016188448A3 publication Critical patent/WO2016188448A3/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
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    • H01L21/02107—Forming insulating materials on a substrate
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    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
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    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H—ELECTRICITY
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    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
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    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

提供一种碳化硅金属氧化物半导体场效应晶体管（MOSFET），包括由第一栅氧化层（9-1）和第二栅氧化层（9-2）构成的栅氧化层，其中，所述第二栅氧化层（9-2）的厚度大于所述第一栅氧化层（9-1）的厚度。通过将栅氧化层设置成厚度不同的两部分，即所述栅氧化层呈阶梯状，在有效减小栅氧化层电场强度的同时，不影响器件阈值电压和栅控特性，且可通过增大结型场效应晶体管（JFET）区宽度减小器件的导通电阻。还提供了所述碳化硅MOSFET器件的制造方法。
PCT/CN2016/083450 2015-05-26 2016-05-26 一种碳化硅mosfet器件及其制备方法 WO2016188448A2 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/576,652 US10475896B2 (en) 2015-05-26 2016-05-26 Silicon carbide MOSFET device and method for manufacturing the same

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CN201510274919.4A CN104966735A (zh) 2015-05-26 2015-05-26 一种碳化硅mosfet器件及其制备方法
CN201510274919.4 2015-05-26

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WO2016188448A3 true WO2016188448A3 (zh) 2017-02-09

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Families Citing this family (10)

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Publication number Priority date Publication date Assignee Title
CN104966735A (zh) 2015-05-26 2015-10-07 株洲南车时代电气股份有限公司 一种碳化硅mosfet器件及其制备方法
CN105355549A (zh) * 2015-11-06 2016-02-24 中国科学院微电子研究所 一种SiC基MOSFET器件P型欧姆接触的制备方法
CN106019762B (zh) 2016-07-27 2019-05-07 深圳市华星光电技术有限公司 一种裸眼3d透镜显示设备及其制作方法
CN109037333B (zh) * 2017-06-12 2021-04-30 中兴通讯股份有限公司 碳化硅金属氧化物半导体场效应晶体管及其制造方法
CN109309127A (zh) * 2018-10-31 2019-02-05 秦皇岛京河科学技术研究院有限公司 一种碳化硅mosfet器件及其制备方法
CN109461659A (zh) * 2018-11-08 2019-03-12 中国科学院微电子研究所 碳化硅mosfet器件及其制备方法
CN111009464B (zh) * 2019-11-25 2023-02-03 深圳第三代半导体研究院 一种SiC功率器件芯片栅氧化层的制造方法及功率器件
CN111653484B (zh) * 2020-06-03 2023-12-15 深圳基本半导体有限公司 一种优化碳化硅mosfet自对准工艺的方法
CN114530370B (zh) * 2020-11-23 2023-11-07 瑶芯微电子科技(上海)有限公司 一种基于外延沟道的mosfet器件及其制备方法
CN117096153B (zh) * 2023-10-18 2024-01-19 荣湃半导体（上海）有限公司 集成esd的mosfet器件及其制备方法

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US10475896B2 (en) 2019-11-12
CN104966735A (zh) 2015-10-07
WO2016188448A2 (zh) 2016-12-01
US20190027568A1 (en) 2019-01-24

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