ATE517141T1 - Norbornenpolymerzusammensetzungen für deckschichten und lithographisches immersionsverfahren unter deren verwendung - Google Patents

Norbornenpolymerzusammensetzungen für deckschichten und lithographisches immersionsverfahren unter deren verwendung

Info

Publication number
ATE517141T1
ATE517141T1 AT08019326T AT08019326T ATE517141T1 AT E517141 T1 ATE517141 T1 AT E517141T1 AT 08019326 T AT08019326 T AT 08019326T AT 08019326 T AT08019326 T AT 08019326T AT E517141 T1 ATE517141 T1 AT E517141T1
Authority
AT
Austria
Prior art keywords
group
linear
norborne
same
polymer compositions
Prior art date
Application number
AT08019326T
Other languages
English (en)
Inventor
Larry F Rhodes
Chun Chang
Pramod Kandanarachchi
Lawrence D Seger
Keita Ishiduka
Kotaro Endo
Tomoyuki Ando
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Application granted granted Critical
Publication of ATE517141T1 publication Critical patent/ATE517141T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/08—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C08G61/04—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms
    • C08G61/06—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms prepared by ring-opening of carbocyclic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Engineering & Computer Science (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Paints Or Removers (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
AT08019326T 2005-02-22 2006-02-21 Norbornenpolymerzusammensetzungen für deckschichten und lithographisches immersionsverfahren unter deren verwendung ATE517141T1 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US65517605P 2005-02-22 2005-02-22
US65535105P 2005-02-23 2005-02-23
US65590105P 2005-02-25 2005-02-25
US68787105P 2005-06-07 2005-06-07
US72875605P 2005-10-21 2005-10-21
US72909105P 2005-10-21 2005-10-21

Publications (1)

Publication Number Publication Date
ATE517141T1 true ATE517141T1 (de) 2011-08-15

Family

ID=36927926

Family Applications (2)

Application Number Title Priority Date Filing Date
AT06735544T ATE517370T1 (de) 2005-02-22 2006-02-21 Norbornenpolymere und deren herstellungsverfahren
AT08019326T ATE517141T1 (de) 2005-02-22 2006-02-21 Norbornenpolymerzusammensetzungen für deckschichten und lithographisches immersionsverfahren unter deren verwendung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
AT06735544T ATE517370T1 (de) 2005-02-22 2006-02-21 Norbornenpolymere und deren herstellungsverfahren

Country Status (7)

Country Link
US (1) US20060235174A1 (de)
EP (2) EP2031007B1 (de)
JP (2) JP2008536956A (de)
KR (2) KR20070116610A (de)
AT (2) ATE517370T1 (de)
HK (1) HK1111480A1 (de)
WO (1) WO2006091523A2 (de)

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JP4600112B2 (ja) * 2005-03-24 2010-12-15 Ｊｓｒ株式会社 液浸用上層膜形成組成物およびフォトレジストパターン形成方法
JP4858062B2 (ja) * 2005-04-27 2012-01-18 株式会社ニコン 露光方法、露光装置、デバイス製造方法、及び膜の評価方法
JP4918858B2 (ja) * 2005-04-27 2012-04-18 株式会社ニコン 露光方法、露光装置、デバイス製造方法、及び膜の評価方法
JP4525454B2 (ja) * 2005-04-27 2010-08-18 Ｊｓｒ株式会社 上層膜形成組成物およびフォトレジストパターン形成方法
US8111374B2 (en) 2005-09-09 2012-02-07 Nikon Corporation Analysis method, exposure method, and device manufacturing method
JP5084216B2 (ja) * 2005-10-03 2012-11-28 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． フォトリソグラフィーのための組成物および方法
JP4684139B2 (ja) * 2005-10-17 2011-05-18 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
KR100764374B1 (ko) * 2005-10-31 2007-10-08 주식회사 하이닉스반도체 이머젼 리소그라피 용액 제거용 조성물 및 이를 이용한이머젼 리소그라피 공정을 포함하는 반도체 소자 제조방법
JP4687893B2 (ja) * 2005-11-21 2011-05-25 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
JP4763511B2 (ja) * 2006-05-26 2011-08-31 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
US20080020324A1 (en) * 2006-07-19 2008-01-24 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography defect reduction with top coater removal
JP4615497B2 (ja) * 2006-09-20 2011-01-19 東京応化工業株式会社 レジスト保護膜形成用組成物及びこれを用いたレジストパターンの形成方法
JP5024293B2 (ja) * 2006-09-27 2012-09-12 Ｊｓｒ株式会社 上層膜形成用組成物およびフォトレジストパターン形成方法
US7759439B2 (en) * 2007-03-30 2010-07-20 Promerus Llc Use of a combination chain transfer and activating agent to control molecular weight and optical density of Pd catalyzed norbornene polymers
JP5130019B2 (ja) * 2007-10-30 2013-01-30 東京応化工業株式会社 ネガ型レジスト組成物及びレジストパターン形成方法
KR101247830B1 (ko) * 2009-09-15 2013-03-26 도오꾜오까고오교 가부시끼가이샤 보호막 형성용 재료 및 포토레지스트 패턴 형성 방법
JP5146606B2 (ja) 2009-09-28 2013-02-20 Ｊｓｒ株式会社 感放射線性樹脂組成物、レジストパターン形成方法、及び、重合体
US8541523B2 (en) * 2010-04-05 2013-09-24 Promerus, Llc Norbornene-type polymers, compositions thereof and lithographic process using such compositions
US9182664B2 (en) * 2010-10-13 2015-11-10 Central Glass Company, Limited Polymerizable fluorine-containing sulfonate, fluorine-containing sulfonate resin, resist composition and pattern-forming method using same
JP2013241595A (ja) * 2013-05-27 2013-12-05 Shin-Etsu Chemical Co Ltd 含フッ素単量体、高分子化合物、レジスト材料及びパターン形成方法
JP6006457B2 (ja) * 2013-06-27 2016-10-12 プロメラス， エルエルシー 感光性組成物及びその応用
JP6371057B2 (ja) 2013-12-27 2018-08-08 東京応化工業株式会社 パターン形成方法
CN113881179B (zh) * 2021-11-09 2022-11-29 无锡大诚高新材料科技有限公司 一种医用包装材料及其制备方法和应用

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Also Published As

Publication number Publication date
WO2006091523A2 (en) 2006-08-31
JP5410792B2 (ja) 2014-02-05
EP1853972A2 (de) 2007-11-14
WO2006091523A3 (en) 2009-04-30
EP2031007B1 (de) 2011-07-20
ATE517370T1 (de) 2011-08-15
EP2031007A3 (de) 2009-09-30
US20060235174A1 (en) 2006-10-19
EP1853972B1 (de) 2011-07-20
HK1111480A1 (en) 2008-08-08
KR101324489B1 (ko) 2013-11-01
JP2009242797A (ja) 2009-10-22
JP2008536956A (ja) 2008-09-11
EP2031007A2 (de) 2009-03-04
EP1853972A4 (de) 2009-12-02
KR20070116610A (ko) 2007-12-10
KR20080104392A (ko) 2008-12-02

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