ATE517370T1 - Norbornenpolymere und deren herstellungsverfahren - Google Patents

Norbornenpolymere und deren herstellungsverfahren

Info

Publication number
ATE517370T1
ATE517370T1 AT06735544T AT06735544T ATE517370T1 AT E517370 T1 ATE517370 T1 AT E517370T1 AT 06735544 T AT06735544 T AT 06735544T AT 06735544 T AT06735544 T AT 06735544T AT E517370 T1 ATE517370 T1 AT E517370T1
Authority
AT
Austria
Prior art keywords
group
linear
norbornene
norborne
polymers
Prior art date
Application number
AT06735544T
Other languages
English (en)
Inventor
Larry Rhodes
Chun Chang
Pramod Kandanarachchi
Lawrence Seger
Keita Ishiduka
Kotaro Endo
Tomoyuki Ando
Original Assignee
Promerus Llc
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Promerus Llc, Tokyo Ohka Kogyo Co Ltd filed Critical Promerus Llc
Application granted granted Critical
Publication of ATE517370T1 publication Critical patent/ATE517370T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/08—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C08G61/04—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms
    • C08G61/06—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms prepared by ring-opening of carbocyclic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Architecture (AREA)
  • Engineering & Computer Science (AREA)
  • Structural Engineering (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Paints Or Removers (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
AT06735544T 2005-02-22 2006-02-21 Norbornenpolymere und deren herstellungsverfahren ATE517370T1 (de)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US65517605P 2005-02-22 2005-02-22
US65535105P 2005-02-23 2005-02-23
US65590105P 2005-02-25 2005-02-25
US68787105P 2005-06-07 2005-06-07
US72875605P 2005-10-21 2005-10-21
US72909105P 2005-10-21 2005-10-21
PCT/US2006/005928 WO2006091523A2 (en) 2005-02-22 2006-02-21 Norbornene-type polymers, compositions thereof and lithographic processes using such compositions

Publications (1)

Publication Number Publication Date
ATE517370T1 true ATE517370T1 (de) 2011-08-15

Family

ID=36927926

Family Applications (2)

Application Number Title Priority Date Filing Date
AT06735544T ATE517370T1 (de) 2005-02-22 2006-02-21 Norbornenpolymere und deren herstellungsverfahren
AT08019326T ATE517141T1 (de) 2005-02-22 2006-02-21 Norbornenpolymerzusammensetzungen für deckschichten und lithographisches immersionsverfahren unter deren verwendung

Family Applications After (1)

Application Number Title Priority Date Filing Date
AT08019326T ATE517141T1 (de) 2005-02-22 2006-02-21 Norbornenpolymerzusammensetzungen für deckschichten und lithographisches immersionsverfahren unter deren verwendung

Country Status (7)

Country Link
US (1) US20060235174A1 (de)
EP (2) EP2031007B1 (de)
JP (2) JP2008536956A (de)
KR (2) KR101324489B1 (de)
AT (2) ATE517370T1 (de)
HK (1) HK1111480A1 (de)
WO (1) WO2006091523A2 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006017035A1 (en) * 2004-07-07 2006-02-16 Promerus Llc Photosensitive dielectric resin compositions and their uses
JP4551704B2 (ja) * 2004-07-08 2010-09-29 富士フイルム株式会社 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法
JP4600112B2 (ja) * 2005-03-24 2010-12-15 Ｊｓｒ株式会社 液浸用上層膜形成組成物およびフォトレジストパターン形成方法
CN102520592A (zh) * 2005-04-27 2012-06-27 株式会社尼康 曝光方法、曝光装置、组件制造方法、以及膜的评估方法
JP4525454B2 (ja) * 2005-04-27 2010-08-18 Ｊｓｒ株式会社 上層膜形成組成物およびフォトレジストパターン形成方法
JP4858062B2 (ja) * 2005-04-27 2012-01-18 株式会社ニコン 露光方法、露光装置、デバイス製造方法、及び膜の評価方法
US8111374B2 (en) 2005-09-09 2012-02-07 Nikon Corporation Analysis method, exposure method, and device manufacturing method
US8158325B2 (en) * 2005-10-03 2012-04-17 Rohm And Haas Electronic Materials Llc Compositions and processes for photolithography
JP4684139B2 (ja) * 2005-10-17 2011-05-18 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
KR100764374B1 (ko) * 2005-10-31 2007-10-08 주식회사 하이닉스반도체 이머젼 리소그라피 용액 제거용 조성물 및 이를 이용한이머젼 리소그라피 공정을 포함하는 반도체 소자 제조방법
JP4687893B2 (ja) * 2005-11-21 2011-05-25 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
JP4763511B2 (ja) * 2006-05-26 2011-08-31 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
US20080020324A1 (en) * 2006-07-19 2008-01-24 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography defect reduction with top coater removal
JP4615497B2 (ja) * 2006-09-20 2011-01-19 東京応化工業株式会社 レジスト保護膜形成用組成物及びこれを用いたレジストパターンの形成方法
US8507189B2 (en) * 2006-09-27 2013-08-13 Jsr Corporation Upper layer film forming composition and method of forming photoresist pattern
US7759439B2 (en) * 2007-03-30 2010-07-20 Promerus Llc Use of a combination chain transfer and activating agent to control molecular weight and optical density of Pd catalyzed norbornene polymers
JP5130019B2 (ja) * 2007-10-30 2013-01-30 東京応化工業株式会社 ネガ型レジスト組成物及びレジストパターン形成方法
KR101247830B1 (ko) * 2009-09-15 2013-03-26 도오꾜오까고오교 가부시끼가이샤 보호막 형성용 재료 및 포토레지스트 패턴 형성 방법
JP5146606B2 (ja) 2009-09-28 2013-02-20 Ｊｓｒ株式会社 感放射線性樹脂組成物、レジストパターン形成方法、及び、重合体
US8541523B2 (en) * 2010-04-05 2013-09-24 Promerus, Llc Norbornene-type polymers, compositions thereof and lithographic process using such compositions
US9182664B2 (en) * 2010-10-13 2015-11-10 Central Glass Company, Limited Polymerizable fluorine-containing sulfonate, fluorine-containing sulfonate resin, resist composition and pattern-forming method using same
JP2013241595A (ja) * 2013-05-27 2013-12-05 Shin-Etsu Chemical Co Ltd 含フッ素単量体、高分子化合物、レジスト材料及びパターン形成方法
JP6006457B2 (ja) * 2013-06-27 2016-10-12 プロメラス， エルエルシー 感光性組成物及びその応用
JP6371057B2 (ja) 2013-12-27 2018-08-08 東京応化工業株式会社 パターン形成方法
CN113881179B (zh) * 2021-11-09 2022-11-29 无锡大诚高新材料科技有限公司 一种医用包装材料及其制备方法和应用
WO2024150630A1 (ja) * 2023-01-10 2024-07-18 富士フイルム株式会社 薬液、薬液収容体、パターン形成方法、電子デバイスの製造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5843624A (en) * 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
WO2000020472A1 (en) * 1998-10-05 2000-04-13 The B.F. Goodrich Company Catalyst and methods for polymerizing cycloolefins
AU3115500A (en) * 1998-12-09 2000-06-26 B.F. Goodrich Company, The In mold addition polymerization of norbornene-type monomers using group 10 metal complexes
US6235849B1 (en) * 1999-02-05 2001-05-22 The B. F. Goodrich Company Method of preparing norbornene sulfonamide polymers
US6420503B1 (en) * 1999-02-05 2002-07-16 Sumitomo Bakelite Co. Ltd. Norbornene sulfonamide polymers
JP4678091B2 (ja) * 1999-03-12 2011-04-27 住友ベークライト株式会社 ペンダント環式無水物基を含有するポリマーの製造法
TW593376B (en) * 2000-04-27 2004-06-21 Shinetsu Chemical Co Polymer, chemically amplified resist composition and patterning process
JP4186819B2 (ja) * 2001-07-12 2008-11-26 ダイキン工業株式会社 含フッ素ノルボルネン誘導体の製造法
TWI284779B (en) * 2002-06-07 2007-08-01 Fujifilm Corp Photosensitive resin composition
US7189490B2 (en) * 2002-10-21 2007-03-13 Shipley Company, L.L.C. Photoresists containing sulfonamide component
EP1597627A4 (de) * 2003-02-20 2008-01-09 Promerus Llc Auflösungsgeschwindigkeitsmodifikatoren für photoresistzusammensetzungen
US7674847B2 (en) * 2003-02-21 2010-03-09 Promerus Llc Vinyl addition polycyclic olefin polymers prepared with non-olefinic chain transfer agents and uses thereof
US7867697B2 (en) * 2003-07-24 2011-01-11 Fujifilm Corporation Positive photosensitive composition and method of forming resist pattern
JP4066377B2 (ja) * 2003-09-03 2008-03-26 松下電器産業株式会社 レジスト材料、及びパターン形成方法
US6949325B2 (en) * 2003-09-16 2005-09-27 International Business Machines Corporation Negative resist composition with fluorosulfonamide-containing polymer
US20050187398A1 (en) 2003-10-31 2005-08-25 Andrew Bell Single component cationic palladium proinitiators for the latent polymerization of cycloolefins
US7063931B2 (en) * 2004-01-08 2006-06-20 International Business Machines Corporation Positive photoresist composition with a polymer including a fluorosulfonamide group and process for its use
JP4507891B2 (ja) * 2004-02-20 2010-07-21 ダイキン工業株式会社 液浸リソグラフィーに用いるレジスト積層体
US7473512B2 (en) * 2004-03-09 2009-01-06 Az Electronic Materials Usa Corp. Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof

Also Published As

Publication number Publication date
JP2009242797A (ja) 2009-10-22
KR20080104392A (ko) 2008-12-02
EP2031007A2 (de) 2009-03-04
JP5410792B2 (ja) 2014-02-05
KR20070116610A (ko) 2007-12-10
EP1853972A2 (de) 2007-11-14
JP2008536956A (ja) 2008-09-11
WO2006091523A3 (en) 2009-04-30
EP2031007B1 (de) 2011-07-20
WO2006091523A2 (en) 2006-08-31
EP1853972B1 (de) 2011-07-20
HK1111480A1 (en) 2008-08-08
US20060235174A1 (en) 2006-10-19
EP1853972A4 (de) 2009-12-02
EP2031007A3 (de) 2009-09-30
KR101324489B1 (ko) 2013-11-01
ATE517141T1 (de) 2011-08-15

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