ATE509135T1 - Verfahren zur herstellung von vakuum-plasma behandelten werkstücken - Google Patents

Verfahren zur herstellung von vakuum-plasma behandelten werkstücken

Info

Publication number
ATE509135T1
ATE509135T1 AT04738110T AT04738110T ATE509135T1 AT E509135 T1 ATE509135 T1 AT E509135T1 AT 04738110 T AT04738110 T AT 04738110T AT 04738110 T AT04738110 T AT 04738110T AT E509135 T1 ATE509135 T1 AT E509135T1
Authority
AT
Austria
Prior art keywords
vacuum chamber
plasma treated
vacuum plasma
frequency
workpiece
Prior art date
Application number
AT04738110T
Other languages
English (en)
Inventor
Mustapha Elyaakoubi
Phannara Aing
Rainer Ostermann
Klaus Neubeck
Benoit Riou
Original Assignee
Oerlikon Solar Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oerlikon Solar Ag filed Critical Oerlikon Solar Ag
Application granted granted Critical
Publication of ATE509135T1 publication Critical patent/ATE509135T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Cleaning In General (AREA)
AT04738110T 2003-07-30 2004-07-26 Verfahren zur herstellung von vakuum-plasma behandelten werkstücken ATE509135T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US49118303P 2003-07-30 2003-07-30
PCT/CH2004/000470 WO2005010232A1 (en) 2003-07-30 2004-07-26 Method of manufacturing vacuum plasma treated workpieces and system for vacuum plasma treating workpieces

Publications (1)

Publication Number Publication Date
ATE509135T1 true ATE509135T1 (de) 2011-05-15

Family

ID=34103009

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04738110T ATE509135T1 (de) 2003-07-30 2004-07-26 Verfahren zur herstellung von vakuum-plasma behandelten werkstücken

Country Status (8)

Country Link
US (1) US7595096B2 (de)
EP (1) EP1651794B1 (de)
JP (1) JP4980055B2 (de)
KR (1) KR101108737B1 (de)
CN (1) CN1833050A (de)
AT (1) ATE509135T1 (de)
TW (1) TWI387398B (de)
WO (1) WO2005010232A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
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JP5276979B2 (ja) * 2005-06-29 2013-08-28 テル・ソーラー・アクチェンゲゼルシャフト 平坦基板を製造する方法
CN102197714A (zh) * 2008-10-21 2011-09-21 应用材料股份有限公司 清洁腔室及工艺所用的等离子体源
KR101074291B1 (ko) * 2009-09-11 2011-10-18 한국철강 주식회사 광기전력 장치 및 광기전력의 제조 방법
KR101072473B1 (ko) * 2009-09-11 2011-10-11 한국철강 주식회사 광기전력 장치 및 광기전력의 제조 방법
TWI421369B (zh) * 2009-12-01 2014-01-01 Ind Tech Res Inst 氣體供應設備
KR20210006725A (ko) * 2019-07-09 2021-01-19 삼성전자주식회사 스퍼터링 장치 및 이를 이용한 반도체 장치의 제조 방법

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US4822450A (en) * 1987-07-16 1989-04-18 Texas Instruments Incorporated Processing apparatus and method
US5811113A (en) * 1989-04-27 1998-09-22 Cancer Technologies, Inc. Method and composition for deactivating HIV infected blood and for deactivating and decolorizing anticancer drugs
US5688330A (en) * 1992-05-13 1997-11-18 Ohmi; Tadahiro Process apparatus
JP3122228B2 (ja) * 1992-05-13 2001-01-09 忠弘 大見 プロセス装置
US5252178A (en) 1992-06-24 1993-10-12 Texas Instruments Incorporated Multi-zone plasma processing method and apparatus
JP3155413B2 (ja) * 1992-10-23 2001-04-09 キヤノン株式会社 光受容部材の形成方法、該方法による光受容部材および堆積膜の形成装置
JPH0794431A (ja) * 1993-04-23 1995-04-07 Canon Inc アモルファス半導体用基板、該基板を有するアモルファス半導体基板、及び該アモルファス半導体基板の製造方法
JP3501486B2 (ja) * 1993-12-27 2004-03-02 キヤノン株式会社 射出成形品の変形量予測方法及びその装置
US5418019A (en) * 1994-05-25 1995-05-23 Georgia Tech Research Corporation Method for low temperature plasma enhanced chemical vapor deposition (PECVD) of an oxide and nitride antireflection coating on silicon
JP3696983B2 (ja) * 1996-06-17 2005-09-21 キヤノン株式会社 プラズマ処理方法およびプラズマ処理装置
US6184158B1 (en) * 1996-12-23 2001-02-06 Lam Research Corporation Inductively coupled plasma CVD
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JP5165993B2 (ja) * 2007-10-18 2013-03-21 東京エレクトロン株式会社 プラズマ処理装置

Also Published As

Publication number Publication date
KR101108737B1 (ko) 2012-02-24
WO2005010232A1 (en) 2005-02-03
EP1651794B1 (de) 2011-05-11
CN1833050A (zh) 2006-09-13
US7595096B2 (en) 2009-09-29
TW200511901A (en) 2005-03-16
US20050051269A1 (en) 2005-03-10
JP2007500783A (ja) 2007-01-18
TWI387398B (zh) 2013-02-21
KR20060056967A (ko) 2006-05-25
EP1651794A1 (de) 2006-05-03
JP4980055B2 (ja) 2012-07-18

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