ATE499458T1 - Verfahren zur herstellung einer porösen sioch- schicht - Google Patents

Verfahren zur herstellung einer porösen sioch- schicht

Info

Publication number
ATE499458T1
ATE499458T1 AT03008723T AT03008723T ATE499458T1 AT E499458 T1 ATE499458 T1 AT E499458T1 AT 03008723 T AT03008723 T AT 03008723T AT 03008723 T AT03008723 T AT 03008723T AT E499458 T1 ATE499458 T1 AT E499458T1
Authority
AT
Austria
Prior art keywords
atomic
film
porous
gaseous reagents
producing
Prior art date
Application number
AT03008723T
Other languages
German (de)
English (en)
Inventor
Raymond Nicholas Vrtis
Mark Leonard O'neill
Jean Louise Vincent
Aaron Scott Lukas
Manchao Xiao
John Anthony Thomas Norman
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/150,798 external-priority patent/US6846515B2/en
Priority claimed from US10/409,468 external-priority patent/US7384471B2/en
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Application granted granted Critical
Publication of ATE499458T1 publication Critical patent/ATE499458T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/045—Silicon oxycarbide, oxynitride or oxycarbonitride glasses
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Silicon Polymers (AREA)
  • Catalysts (AREA)
AT03008723T 2002-04-17 2003-04-16 Verfahren zur herstellung einer porösen sioch- schicht ATE499458T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US37310402P 2002-04-17 2002-04-17
US10/150,798 US6846515B2 (en) 2002-04-17 2002-05-17 Methods for using porogens and/or porogenated precursors to provide porous organosilica glass films with low dielectric constants
US10/409,468 US7384471B2 (en) 2002-04-17 2003-04-07 Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants

Publications (1)

Publication Number Publication Date
ATE499458T1 true ATE499458T1 (de) 2011-03-15

Family

ID=46150309

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03008723T ATE499458T1 (de) 2002-04-17 2003-04-16 Verfahren zur herstellung einer porösen sioch- schicht

Country Status (3)

Country Link
JP (3) JP5774830B2 (https=)
KR (1) KR100494194B1 (https=)
AT (1) ATE499458T1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8293001B2 (en) 2002-04-17 2012-10-23 Air Products And Chemicals, Inc. Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
US20080268177A1 (en) * 2002-05-17 2008-10-30 Air Products And Chemicals, Inc. Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films with Low Dielectric Constants
US8951342B2 (en) 2002-04-17 2015-02-10 Air Products And Chemicals, Inc. Methods for using porogens for low k porous organosilica glass films
US9061317B2 (en) 2002-04-17 2015-06-23 Air Products And Chemicals, Inc. Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
US20040197474A1 (en) * 2003-04-01 2004-10-07 Vrtis Raymond Nicholas Method for enhancing deposition rate of chemical vapor deposition films
US7498273B2 (en) * 2006-05-30 2009-03-03 Applied Materials, Inc. Formation of high quality dielectric films of silicon dioxide for STI: usage of different siloxane-based precursors for harp II—remote plasma enhanced deposition processes
US7410916B2 (en) * 2006-11-21 2008-08-12 Applied Materials, Inc. Method of improving initiation layer for low-k dielectric film by digital liquid flow meter
CN102859666B (zh) 2010-02-09 2015-05-13 西江大学校产学协力团 纳米多孔超低介电薄膜及其包括高温臭氧处理的制备方法
KR102316276B1 (ko) 2020-04-20 2021-10-25 한국과학기술연구원 다단기공구조를 갖는 킬레이트 복합체 및 그 제조방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU7371898A (en) * 1997-05-07 1998-11-27 Mark J. Hampden-Smith Low density film for low dielectric constant applications
JP3173426B2 (ja) * 1997-06-09 2001-06-04 日本電気株式会社 シリカ絶縁膜の製造方法及び半導体装置の製造方法
JP3756666B2 (ja) * 1998-05-08 2006-03-15 松下電器産業株式会社 多孔質膜の形成方法及びその形成装置
JP3888794B2 (ja) * 1999-01-27 2007-03-07 松下電器産業株式会社 多孔質膜の形成方法、配線構造体及びその形成方法
JP3633821B2 (ja) * 1999-03-18 2005-03-30 独立行政法人科学技術振興機構 気相からの低誘電率多孔質シリカ膜の形成方法
US6541367B1 (en) * 2000-01-18 2003-04-01 Applied Materials, Inc. Very low dielectric constant plasma-enhanced CVD films
JP2001274153A (ja) * 2000-03-24 2001-10-05 Hitachi Kokusai Electric Inc 絶縁膜の製造方法
CN1257547C (zh) * 2000-08-02 2006-05-24 国际商业机器公司 多相低介电常数材料及其沉积方法与应用
WO2002043119A2 (en) * 2000-10-25 2002-05-30 International Business Machines Corporation An ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device, a method for fabricating the same, and an electronic device containing the same
KR20030002993A (ko) * 2001-06-29 2003-01-09 학교법인 포항공과대학교 저유전체 박막의 제조방법
US7384471B2 (en) * 2002-04-17 2008-06-10 Air Products And Chemicals, Inc. Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants

Also Published As

Publication number Publication date
JP5774830B2 (ja) 2015-09-09
JP2012144738A (ja) 2012-08-02
KR100494194B1 (ko) 2005-06-10
JP2014150287A (ja) 2014-08-21
JP5711176B2 (ja) 2015-04-30
KR20030082479A (ko) 2003-10-22
JP2011014925A (ja) 2011-01-20

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