ATE497636T1 - Halbleitervorrichtung und herstellungsverfahren dafür - Google Patents
Halbleitervorrichtung und herstellungsverfahren dafürInfo
- Publication number
- ATE497636T1 ATE497636T1 AT06758084T AT06758084T ATE497636T1 AT E497636 T1 ATE497636 T1 AT E497636T1 AT 06758084 T AT06758084 T AT 06758084T AT 06758084 T AT06758084 T AT 06758084T AT E497636 T1 ATE497636 T1 AT E497636T1
- Authority
- AT
- Austria
- Prior art keywords
- layer
- junction
- semiconductor device
- conductivity type
- ring
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000463 material Substances 0.000 abstract 2
- 230000000903 blocking effect Effects 0.000 abstract 1
- 239000011810 insulating material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
- Led Devices (AREA)
- Bipolar Transistors (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/185,106 US7768092B2 (en) | 2005-07-20 | 2005-07-20 | Semiconductor device comprising a junction having a plurality of rings |
PCT/SE2006/000902 WO2007011294A1 (en) | 2005-07-20 | 2006-07-20 | Semiconductor device and a method for production thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE497636T1 true ATE497636T1 (de) | 2011-02-15 |
Family
ID=37669087
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT06758084T ATE497636T1 (de) | 2005-07-20 | 2006-07-20 | Halbleitervorrichtung und herstellungsverfahren dafür |
Country Status (6)
Country | Link |
---|---|
US (1) | US7768092B2 (de) |
EP (1) | EP1905089B1 (de) |
JP (1) | JP4972090B2 (de) |
AT (1) | ATE497636T1 (de) |
DE (1) | DE602006019967D1 (de) |
WO (1) | WO2007011294A1 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4889645B2 (ja) * | 2005-09-08 | 2012-03-07 | 三菱電機株式会社 | 半導体装置の製造方法 |
JP2008177369A (ja) * | 2007-01-18 | 2008-07-31 | Sumitomo Electric Ind Ltd | ショットキバリアダイオード |
JP2009054640A (ja) * | 2007-08-23 | 2009-03-12 | National Institute Of Advanced Industrial & Technology | 高出力ダイヤモンド半導体素子 |
KR101027138B1 (ko) | 2009-12-24 | 2011-04-05 | 페어차일드코리아반도체 주식회사 | 다이아몬드상 카본 박막 패시배이션을 적용한 질화물계 반도체 소자 및 그 제조 방법 |
JP2013232564A (ja) * | 2012-04-27 | 2013-11-14 | National Institute Of Advanced Industrial & Technology | 半導体装置および半導体装置の製造方法 |
JPWO2014054319A1 (ja) * | 2012-10-02 | 2016-08-25 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP2014146748A (ja) * | 2013-01-30 | 2014-08-14 | Toshiba Corp | 半導体装置及びその製造方法並びに半導体基板 |
US10297666B2 (en) | 2015-04-14 | 2019-05-21 | Mitsubishi Electric Corporation | Semiconductor device with a well region |
JP2017152732A (ja) * | 2017-05-01 | 2017-08-31 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
CN110729349A (zh) * | 2019-11-29 | 2020-01-24 | 中芯集成电路制造(绍兴)有限公司 | 功率器件终端结构及其形成方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4989483A (de) * | 1972-12-27 | 1974-08-27 | ||
US4648174A (en) * | 1985-02-05 | 1987-03-10 | General Electric Company | Method of making high breakdown voltage semiconductor device |
JPH0618280B2 (ja) * | 1988-04-19 | 1994-03-09 | サンケン電気株式会社 | ショットキバリア半導体装置 |
KR100243961B1 (ko) | 1991-07-02 | 2000-02-01 | 요트.게.아. 롤페즈 | 반도체장치 |
JP2850694B2 (ja) | 1993-03-10 | 1999-01-27 | 株式会社日立製作所 | 高耐圧プレーナ型半導体装置 |
US6011298A (en) | 1996-12-31 | 2000-01-04 | Stmicroelectronics, Inc. | High voltage termination with buried field-shaping region |
SE9700141D0 (sv) | 1997-01-20 | 1997-01-20 | Abb Research Ltd | A schottky diode of SiC and a method for production thereof |
SE9700156D0 (sv) * | 1997-01-21 | 1997-01-21 | Abb Research Ltd | Junction termination for Si C Schottky diode |
US5932894A (en) * | 1997-06-26 | 1999-08-03 | Abb Research Ltd. | SiC semiconductor device comprising a pn junction |
JP3785794B2 (ja) * | 1998-03-18 | 2006-06-14 | 株式会社デンソー | 炭化珪素半導体装置及びその製造方法 |
JP2002535839A (ja) * | 1999-01-15 | 2002-10-22 | インフィネオン テクノロジース アクチエンゲゼルシャフト | 半導体素子に対するエッジ終端部、エッジ終端部を有するショットキー・ダイオードおよびショットキー・ダイオードの製造方法 |
JP4458588B2 (ja) | 1999-10-18 | 2010-04-28 | 日本碍子株式会社 | 静電誘導型半導体デバイスおよびその製造方法 |
US6524900B2 (en) * | 2001-07-25 | 2003-02-25 | Abb Research, Ltd | Method concerning a junction barrier Schottky diode, such a diode and use thereof |
JP2003069045A (ja) * | 2001-08-22 | 2003-03-07 | Mitsubishi Electric Corp | 半導体装置 |
WO2005104232A1 (en) * | 2004-04-27 | 2005-11-03 | Koninklijke Philips Electronics N.V., | Semiconductor device and method of manufacturing such a device |
US7318349B2 (en) * | 2005-06-04 | 2008-01-15 | Vladimir Vaganov | Three-axis integrated MEMS accelerometer |
-
2005
- 2005-07-20 US US11/185,106 patent/US7768092B2/en active Active
-
2006
- 2006-07-20 DE DE602006019967T patent/DE602006019967D1/de active Active
- 2006-07-20 EP EP06758084A patent/EP1905089B1/de active Active
- 2006-07-20 JP JP2008522737A patent/JP4972090B2/ja active Active
- 2006-07-20 WO PCT/SE2006/000902 patent/WO2007011294A1/en active Application Filing
- 2006-07-20 AT AT06758084T patent/ATE497636T1/de not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP2009502040A (ja) | 2009-01-22 |
JP4972090B2 (ja) | 2012-07-11 |
US7768092B2 (en) | 2010-08-03 |
WO2007011294A1 (en) | 2007-01-25 |
US20070018171A1 (en) | 2007-01-25 |
EP1905089B1 (de) | 2011-02-02 |
DE602006019967D1 (de) | 2011-03-17 |
EP1905089A1 (de) | 2008-04-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |