ATE483231T1 - Niederspannungsleseverstärker und verfahren - Google Patents
Niederspannungsleseverstärker und verfahrenInfo
- Publication number
- ATE483231T1 ATE483231T1 AT04714679T AT04714679T ATE483231T1 AT E483231 T1 ATE483231 T1 AT E483231T1 AT 04714679 T AT04714679 T AT 04714679T AT 04714679 T AT04714679 T AT 04714679T AT E483231 T1 ATE483231 T1 AT E483231T1
- Authority
- AT
- Austria
- Prior art keywords
- lines
- sense
- complementary
- digit
- sense amplifier
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/065—Differential amplifiers of latching type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4087—Address decoders, e.g. bit - or word line decoders; Multiple line decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/06—Address interface arrangements, e.g. address buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/10—Decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/06—Sense amplifier related aspects
- G11C2207/065—Sense amplifier drivers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
- Radar Systems Or Details Thereof (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/374,376 US6950368B2 (en) | 2003-02-25 | 2003-02-25 | Low-voltage sense amplifier and method |
| PCT/US2004/005850 WO2004077659A2 (en) | 2003-02-25 | 2004-02-25 | Low-voltage sense amplifier and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE483231T1 true ATE483231T1 (de) | 2010-10-15 |
Family
ID=32868866
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT04714679T ATE483231T1 (de) | 2003-02-25 | 2004-02-25 | Niederspannungsleseverstärker und verfahren |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US6950368B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP1614118B1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP2006518910A (cg-RX-API-DMAC7.html) |
| KR (1) | KR100865906B1 (cg-RX-API-DMAC7.html) |
| CN (1) | CN1759448B (cg-RX-API-DMAC7.html) |
| AT (1) | ATE483231T1 (cg-RX-API-DMAC7.html) |
| DE (1) | DE602004029342D1 (cg-RX-API-DMAC7.html) |
| TW (1) | TWI340539B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2004077659A2 (cg-RX-API-DMAC7.html) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100634384B1 (ko) * | 2004-07-16 | 2006-10-16 | 삼성전자주식회사 | 액세스 데이터를 저장하는 회로를 구비한 반도체 메모리 장치 |
| KR100772686B1 (ko) * | 2004-10-30 | 2007-11-02 | 주식회사 하이닉스반도체 | 저전압용 반도체 메모리 장치 |
| EP1727147B1 (fr) * | 2005-05-23 | 2011-07-13 | STMicroelectronics (Crolles 2) SAS | Amplificateur de lecture pour mémoire dynamique |
| US7505341B2 (en) * | 2006-05-17 | 2009-03-17 | Micron Technology, Inc. | Low voltage sense amplifier and sensing method |
| US7688635B2 (en) * | 2006-07-14 | 2010-03-30 | Micron Technology, Inc. | Current sensing for Flash |
| US20090059686A1 (en) * | 2007-09-04 | 2009-03-05 | Chih-Ta Star Sung | Sensing scheme for the semiconductor memory |
| US8422294B2 (en) * | 2010-10-08 | 2013-04-16 | Infineon Technologies Ag | Symmetric, differential nonvolatile memory cell |
| US8451652B2 (en) * | 2010-12-02 | 2013-05-28 | Lsi Corporation | Write assist static random access memory cell |
| FR2974666B1 (fr) * | 2011-04-26 | 2013-05-17 | Soitec Silicon On Insulator | Amplificateur de detection differentiel sans transistor de precharge dedie |
| WO2014070852A1 (en) * | 2012-10-31 | 2014-05-08 | Marvell World Trade Ltd. | Sram cells suitable for fin field-effect transistor (finfet) process |
| US9842631B2 (en) | 2012-12-14 | 2017-12-12 | Nvidia Corporation | Mitigating external influences on long signal lines |
| US9087559B2 (en) * | 2012-12-27 | 2015-07-21 | Intel Corporation | Memory sense amplifier voltage modulation |
| TWI505283B (zh) * | 2013-01-25 | 2015-10-21 | Nat Univ Tsing Hua | 利用電容耦合實現動態參考電壓之感測放大器 |
| US9294051B2 (en) * | 2013-03-15 | 2016-03-22 | Lattice Semiconductor Corporation | Method and apparatus for implementing wide data range and wide common-mode receivers |
| TWI556242B (zh) * | 2014-10-08 | 2016-11-01 | 修平學校財團法人修平科技大學 | 單埠靜態隨機存取記憶體（八） |
| TWI556239B (zh) * | 2015-05-08 | 2016-11-01 | 修平學校財團法人修平科技大學 | ７ｔ雙埠靜態隨機存取記憶體（三） |
| TWI556240B (zh) * | 2015-05-08 | 2016-11-01 | 修平學校財團法人修平科技大學 | ７ｔ雙埠靜態隨機存取記憶體（四） |
| CN104979011B (zh) * | 2015-07-10 | 2019-02-22 | 北京兆易创新科技股份有限公司 | 资料存储型闪存中优化读数据电路 |
| US9911471B1 (en) * | 2017-02-14 | 2018-03-06 | Micron Technology, Inc. | Input buffer circuit |
| JP6961714B2 (ja) * | 2017-04-04 | 2021-11-05 | アーティラックス・インコーポレイテッド | 高速光感知装置ｉｉｉ |
| US10236036B2 (en) * | 2017-05-09 | 2019-03-19 | Micron Technology, Inc. | Sense amplifier signal boost |
| FR3076923A1 (fr) * | 2018-01-16 | 2019-07-19 | Stmicroelectronics (Rousset) Sas | Procede et circuit d'authentification |
| US11875838B2 (en) * | 2019-07-12 | 2024-01-16 | Semiconductor Energy Laboratory Co., Ltd. | Memory device, semiconductor device, and electronic device |
| FR3098949B1 (fr) | 2019-07-15 | 2023-10-06 | St Microelectronics Rousset | Fonction à sens unique |
| US12563735B2 (en) * | 2021-09-01 | 2026-02-24 | Micron Technology, Inc. | Electronic devices including vertical strings of memory cells, and related memory devices, systems and methods |
| US12218598B2 (en) * | 2022-05-31 | 2025-02-04 | Texas Instruments Incorporated | Quasi-resonant isolated voltage converter |
| US12131771B2 (en) * | 2022-06-02 | 2024-10-29 | Micron Technology, Inc. | Sense amplifier reference voltage through sense amplifier latch devices |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5755592A (en) * | 1980-09-18 | 1982-04-02 | Nec Corp | Memory device |
| JP3519499B2 (ja) * | 1995-05-11 | 2004-04-12 | 株式会社ルネサステクノロジ | 相補差動増幅器およびそれを備える半導体メモリ装置 |
| US5548231A (en) * | 1995-06-02 | 1996-08-20 | Translogic Technology, Inc. | Serial differential pass gate logic design |
| US5936905A (en) * | 1996-09-03 | 1999-08-10 | Townsend And Townsend And Crew Llp | Self adjusting delay circuit and method for compensating sense amplifier clock timing |
| US5889715A (en) * | 1997-04-23 | 1999-03-30 | Artisan Components, Inc. | Voltage sense amplifier and methods for implementing the same |
| NO304456B1 (no) * | 1997-07-18 | 1998-12-14 | Petroleum Geo Services As | Sammenleggbar dybdekontroller |
| KR100298443B1 (ko) * | 1998-08-18 | 2001-08-07 | 김영환 | 센스앰프제어회로 |
| JP3221428B2 (ja) * | 1999-02-12 | 2001-10-22 | 日本電気株式会社 | ラッチ型センスアンプ回路 |
| US6031776A (en) * | 1999-08-17 | 2000-02-29 | United Microelectronics Corp. | Sense amplifier circuit for a semiconductor memory device |
| US6141276A (en) * | 1999-09-02 | 2000-10-31 | Micron Technology, Inc. | Apparatus and method for increasing test flexibility of a memory device |
-
2003
- 2003-02-25 US US10/374,376 patent/US6950368B2/en not_active Expired - Lifetime
-
2004
- 2004-02-24 TW TW093104647A patent/TWI340539B/zh not_active IP Right Cessation
- 2004-02-25 DE DE602004029342T patent/DE602004029342D1/de not_active Expired - Lifetime
- 2004-02-25 WO PCT/US2004/005850 patent/WO2004077659A2/en not_active Ceased
- 2004-02-25 KR KR1020057015813A patent/KR100865906B1/ko not_active Expired - Fee Related
- 2004-02-25 EP EP04714679A patent/EP1614118B1/en not_active Expired - Lifetime
- 2004-02-25 JP JP2006503900A patent/JP2006518910A/ja active Pending
- 2004-02-25 AT AT04714679T patent/ATE483231T1/de not_active IP Right Cessation
- 2004-02-25 CN CN200480005177.5A patent/CN1759448B/zh not_active Expired - Lifetime
- 2004-12-17 US US11/015,045 patent/US7019561B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1759448A (zh) | 2006-04-12 |
| US20040165462A1 (en) | 2004-08-26 |
| DE602004029342D1 (de) | 2010-11-11 |
| TW200501554A (en) | 2005-01-01 |
| US6950368B2 (en) | 2005-09-27 |
| KR20050107458A (ko) | 2005-11-11 |
| EP1614118B1 (en) | 2010-09-29 |
| US7019561B2 (en) | 2006-03-28 |
| EP1614118A4 (en) | 2007-11-28 |
| JP2006518910A (ja) | 2006-08-17 |
| EP1614118A2 (en) | 2006-01-11 |
| WO2004077659A2 (en) | 2004-09-10 |
| TWI340539B (en) | 2011-04-11 |
| CN1759448B (zh) | 2010-05-12 |
| WO2004077659A3 (en) | 2005-11-10 |
| US20050099872A1 (en) | 2005-05-12 |
| KR100865906B1 (ko) | 2008-10-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |