KR100865906B1 - 저전압 감지 증폭기 및 방법 - Google Patents

저전압 감지 증폭기 및 방법 Download PDF

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Publication number
KR100865906B1
KR100865906B1 KR1020057015813A KR20057015813A KR100865906B1 KR 100865906 B1 KR100865906 B1 KR 100865906B1 KR 1020057015813 A KR1020057015813 A KR 1020057015813A KR 20057015813 A KR20057015813 A KR 20057015813A KR 100865906 B1 KR100865906 B1 KR 100865906B1
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KR
South Korea
Prior art keywords
sense
sense amplifier
coupled
voltage
complementary
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Expired - Fee Related
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KR1020057015813A
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English (en)
Korean (ko)
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KR20050107458A (ko
Inventor
도날드 엠. 모건
Original Assignee
마이크론 테크놀로지 인코포레이티드
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Publication of KR20050107458A publication Critical patent/KR20050107458A/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4087—Address decoders, e.g. bit - or word line decoders; Multiple line decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/06—Address interface arrangements, e.g. address buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/065—Sense amplifier drivers

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Radar Systems Or Details Thereof (AREA)
KR1020057015813A 2003-02-25 2004-02-25 저전압 감지 증폭기 및 방법 Expired - Fee Related KR100865906B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/374,376 US6950368B2 (en) 2003-02-25 2003-02-25 Low-voltage sense amplifier and method
US10/374,376 2003-02-25

Publications (2)

Publication Number Publication Date
KR20050107458A KR20050107458A (ko) 2005-11-11
KR100865906B1 true KR100865906B1 (ko) 2008-10-29

Family

ID=32868866

Family Applications (1)

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KR1020057015813A Expired - Fee Related KR100865906B1 (ko) 2003-02-25 2004-02-25 저전압 감지 증폭기 및 방법

Country Status (9)

Country Link
US (2) US6950368B2 (cg-RX-API-DMAC7.html)
EP (1) EP1614118B1 (cg-RX-API-DMAC7.html)
JP (1) JP2006518910A (cg-RX-API-DMAC7.html)
KR (1) KR100865906B1 (cg-RX-API-DMAC7.html)
CN (1) CN1759448B (cg-RX-API-DMAC7.html)
AT (1) ATE483231T1 (cg-RX-API-DMAC7.html)
DE (1) DE602004029342D1 (cg-RX-API-DMAC7.html)
TW (1) TWI340539B (cg-RX-API-DMAC7.html)
WO (1) WO2004077659A2 (cg-RX-API-DMAC7.html)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100634384B1 (ko) * 2004-07-16 2006-10-16 삼성전자주식회사 액세스 데이터를 저장하는 회로를 구비한 반도체 메모리 장치
KR100772686B1 (ko) * 2004-10-30 2007-11-02 주식회사 하이닉스반도체 저전압용 반도체 메모리 장치
EP1727147B1 (fr) * 2005-05-23 2011-07-13 STMicroelectronics (Crolles 2) SAS Amplificateur de lecture pour mémoire dynamique
US7505341B2 (en) * 2006-05-17 2009-03-17 Micron Technology, Inc. Low voltage sense amplifier and sensing method
US7688635B2 (en) * 2006-07-14 2010-03-30 Micron Technology, Inc. Current sensing for Flash
US20090059686A1 (en) * 2007-09-04 2009-03-05 Chih-Ta Star Sung Sensing scheme for the semiconductor memory
US8422294B2 (en) * 2010-10-08 2013-04-16 Infineon Technologies Ag Symmetric, differential nonvolatile memory cell
US8451652B2 (en) * 2010-12-02 2013-05-28 Lsi Corporation Write assist static random access memory cell
FR2974666B1 (fr) * 2011-04-26 2013-05-17 Soitec Silicon On Insulator Amplificateur de detection differentiel sans transistor de precharge dedie
WO2014070852A1 (en) * 2012-10-31 2014-05-08 Marvell World Trade Ltd. Sram cells suitable for fin field-effect transistor (finfet) process
US9842631B2 (en) 2012-12-14 2017-12-12 Nvidia Corporation Mitigating external influences on long signal lines
US9087559B2 (en) * 2012-12-27 2015-07-21 Intel Corporation Memory sense amplifier voltage modulation
TWI505283B (zh) * 2013-01-25 2015-10-21 Nat Univ Tsing Hua 利用電容耦合實現動態參考電壓之感測放大器
US9294051B2 (en) * 2013-03-15 2016-03-22 Lattice Semiconductor Corporation Method and apparatus for implementing wide data range and wide common-mode receivers
TWI556242B (zh) * 2014-10-08 2016-11-01 修平學校財團法人修平科技大學 單埠靜態隨機存取記憶體（八）
TWI556239B (zh) * 2015-05-08 2016-11-01 修平學校財團法人修平科技大學 ７ｔ雙埠靜態隨機存取記憶體（三）
TWI556240B (zh) * 2015-05-08 2016-11-01 修平學校財團法人修平科技大學 ７ｔ雙埠靜態隨機存取記憶體（四）
CN104979011B (zh) * 2015-07-10 2019-02-22 北京兆易创新科技股份有限公司 资料存储型闪存中优化读数据电路
US9911471B1 (en) * 2017-02-14 2018-03-06 Micron Technology, Inc. Input buffer circuit
JP6961714B2 (ja) * 2017-04-04 2021-11-05 アーティラックス・インコーポレイテッド 高速光感知装置ｉｉｉ
US10236036B2 (en) * 2017-05-09 2019-03-19 Micron Technology, Inc. Sense amplifier signal boost
FR3076923A1 (fr) * 2018-01-16 2019-07-19 Stmicroelectronics (Rousset) Sas Procede et circuit d'authentification
US11875838B2 (en) * 2019-07-12 2024-01-16 Semiconductor Energy Laboratory Co., Ltd. Memory device, semiconductor device, and electronic device
FR3098949B1 (fr) 2019-07-15 2023-10-06 St Microelectronics Rousset Fonction à sens unique
US12563735B2 (en) * 2021-09-01 2026-02-24 Micron Technology, Inc. Electronic devices including vertical strings of memory cells, and related memory devices, systems and methods
US12218598B2 (en) * 2022-05-31 2025-02-04 Texas Instruments Incorporated Quasi-resonant isolated voltage converter
US12131771B2 (en) * 2022-06-02 2024-10-29 Micron Technology, Inc. Sense amplifier reference voltage through sense amplifier latch devices

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4451906A (en) 1980-09-18 1984-05-29 Nippon Electric Co., Ltd. Dynamic type memory device having improved operation speed
US5548231A (en) 1995-06-02 1996-08-20 Translogic Technology, Inc. Serial differential pass gate logic design
US6255862B1 (en) 1999-02-12 2001-07-03 Nec Corporation Latch type sense amplifier circuit
US6459653B1 (en) 1997-07-18 2002-10-01 Petroleum Geo-Services As Collapsible depth controller for mounting in relation to seismic cables or similar device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3519499B2 (ja) * 1995-05-11 2004-04-12 株式会社ルネサステクノロジ 相補差動増幅器およびそれを備える半導体メモリ装置
US5936905A (en) * 1996-09-03 1999-08-10 Townsend And Townsend And Crew Llp Self adjusting delay circuit and method for compensating sense amplifier clock timing
US5889715A (en) * 1997-04-23 1999-03-30 Artisan Components, Inc. Voltage sense amplifier and methods for implementing the same
KR100298443B1 (ko) * 1998-08-18 2001-08-07 김영환 센스앰프제어회로
US6031776A (en) * 1999-08-17 2000-02-29 United Microelectronics Corp. Sense amplifier circuit for a semiconductor memory device
US6141276A (en) * 1999-09-02 2000-10-31 Micron Technology, Inc. Apparatus and method for increasing test flexibility of a memory device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4451906A (en) 1980-09-18 1984-05-29 Nippon Electric Co., Ltd. Dynamic type memory device having improved operation speed
US5548231A (en) 1995-06-02 1996-08-20 Translogic Technology, Inc. Serial differential pass gate logic design
US6459653B1 (en) 1997-07-18 2002-10-01 Petroleum Geo-Services As Collapsible depth controller for mounting in relation to seismic cables or similar device
US6255862B1 (en) 1999-02-12 2001-07-03 Nec Corporation Latch type sense amplifier circuit

Also Published As

Publication number Publication date
CN1759448A (zh) 2006-04-12
US20040165462A1 (en) 2004-08-26
DE602004029342D1 (de) 2010-11-11
TW200501554A (en) 2005-01-01
US6950368B2 (en) 2005-09-27
KR20050107458A (ko) 2005-11-11
EP1614118B1 (en) 2010-09-29
US7019561B2 (en) 2006-03-28
EP1614118A4 (en) 2007-11-28
JP2006518910A (ja) 2006-08-17
ATE483231T1 (de) 2010-10-15
EP1614118A2 (en) 2006-01-11
WO2004077659A2 (en) 2004-09-10
TWI340539B (en) 2011-04-11
CN1759448B (zh) 2010-05-12
WO2004077659A3 (en) 2005-11-10
US20050099872A1 (en) 2005-05-12

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