ATE470266T1 - Steuervorrichtung eines elektronischen leistungstrenners und eine solche vorrichtung umfassender stromrichter - Google Patents
Steuervorrichtung eines elektronischen leistungstrenners und eine solche vorrichtung umfassender stromrichterInfo
- Publication number
- ATE470266T1 ATE470266T1 AT08100706T AT08100706T ATE470266T1 AT E470266 T1 ATE470266 T1 AT E470266T1 AT 08100706 T AT08100706 T AT 08100706T AT 08100706 T AT08100706 T AT 08100706T AT E470266 T1 ATE470266 T1 AT E470266T1
- Authority
- AT
- Austria
- Prior art keywords
- source
- switch
- control device
- states
- auxiliary
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/20—Modifications for resetting core switching units to a predetermined state
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
- H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K2017/066—Maximizing the OFF-resistance instead of minimizing the ON-resistance
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K2017/6875—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors using self-conductive, depletion FETs
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0752840A FR2911736B1 (fr) | 2007-01-23 | 2007-01-23 | Dispositif de commande d'un interrupteur de puissance et variateur comprenant un tel dipositif. |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE470266T1 true ATE470266T1 (de) | 2010-06-15 |
Family
ID=38458073
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT08100706T ATE470266T1 (de) | 2007-01-23 | 2008-01-21 | Steuervorrichtung eines elektronischen leistungstrenners und eine solche vorrichtung umfassender stromrichter |
Country Status (7)
Country | Link |
---|---|
US (1) | US7723869B2 (de) |
EP (1) | EP1950885B1 (de) |
JP (1) | JP5058835B2 (de) |
AT (1) | ATE470266T1 (de) |
DE (1) | DE602008001381D1 (de) |
ES (1) | ES2346267T3 (de) |
FR (1) | FR2911736B1 (de) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101217357B1 (ko) | 2008-08-21 | 2012-12-31 | 미쓰비시덴키 가부시키가이샤 | 전력용 반도체 소자의 구동 회로 |
JP5322269B2 (ja) * | 2008-08-21 | 2013-10-23 | 住友電気工業株式会社 | 半導体スイッチング装置 |
ATE481772T1 (de) * | 2008-12-23 | 2010-10-15 | Sma Solar Technology Ag | Elektrische schaltung mit selbstleitendem halbleiterschalter |
FR2941577B1 (fr) * | 2009-01-27 | 2011-02-11 | Schneider Electric Ind Sas | Dispositif de commande d'un transistor jfet |
JP2012527178A (ja) * | 2009-05-11 | 2012-11-01 | エスエス エスシー アイピー、エルエルシー | エンハンスメントモード型およびデプレションモード型のワイドバンドギャップ半導体jfetのためのゲートドライバ |
JP5170075B2 (ja) * | 2009-12-28 | 2013-03-27 | サンケン電気株式会社 | 電流型インバータ装置 |
EP2355290B1 (de) * | 2010-02-04 | 2017-04-26 | Inmotion Technologies AB | Schutzschaltung für eine Antriebsschaltung eines Permanentmagnetmotors und entsprechendes System |
WO2011099117A1 (ja) * | 2010-02-09 | 2011-08-18 | 三菱電機株式会社 | プログラマブルコントローラ |
US8320090B2 (en) * | 2010-06-08 | 2012-11-27 | Hamilton Sundstrand Corporation | SSPC for parallel arc fault detection in DC power system |
US20120262220A1 (en) * | 2011-04-13 | 2012-10-18 | Semisouth Laboratories, Inc. | Cascode switches including normally-off and normally-on devices and circuits comprising the switches |
GB201112144D0 (en) | 2011-07-15 | 2011-08-31 | Cambridge Entpr Ltd | Switching circuits |
JP5811800B2 (ja) * | 2011-11-18 | 2015-11-11 | 富士通株式会社 | 制御回路及び電子機器 |
KR101773315B1 (ko) * | 2011-12-05 | 2017-08-31 | 미쓰비시덴키 가부시키가이샤 | 전원 전압 감시 기능을 갖는 전자 제어 장치 및 그것을 구비한 차량 스티어링 제어 장치 |
US9025294B2 (en) * | 2012-02-24 | 2015-05-05 | Hamilton Sundstrand Corporation | System and method for controlling solid state circuit breakers |
FR2990312B1 (fr) * | 2012-05-03 | 2015-05-15 | Alstom Transport Sa | Un dispositif comportant un composant electronique avec une grande vitesse de commutation |
JP6237038B2 (ja) * | 2013-09-20 | 2017-11-29 | 富士通株式会社 | カスコードトランジスタ及びカスコードトランジスタの制御方法 |
WO2015078482A1 (en) * | 2013-11-22 | 2015-06-04 | Intel Corporation | Methods and devices for detecting open and/or shorts circuits in mems micro-mirror devices |
AT516568B1 (de) * | 2014-11-21 | 2017-03-15 | Bernecker + Rainer Industrie-Elektronik Ges M B H | Vorrichtung und ein Verfahren zur sicheren Ansteuerung eines Halbleiterschalters eines Wechselrichters |
JP6591315B2 (ja) * | 2016-03-09 | 2019-10-16 | ルネサスエレクトロニクス株式会社 | 半導体装置、チャージポンプ回路、半導体システム、車両及び半導体装置の制御方法 |
US9871510B1 (en) | 2016-08-24 | 2018-01-16 | Power Integrations, Inc. | Clamp for a hybrid switch |
EP3523874A1 (de) | 2016-10-05 | 2019-08-14 | Johnson Controls Technology Company | Antrieb mit variabler geschwindigkeit für ein hlk-system |
US10516262B2 (en) * | 2016-12-01 | 2019-12-24 | Osypka Medical Gmbh | Overvoltage protection device and method |
US10511297B2 (en) * | 2017-07-25 | 2019-12-17 | Psemi Corporation | High-speed switch with accelerated switching time |
US10734992B2 (en) * | 2017-08-09 | 2020-08-04 | Infineon Technologies Ag | Circuit and method for providing an output signal |
FR3083396B1 (fr) * | 2018-06-28 | 2020-08-21 | Valeo Equip Electr Moteur | Systeme de commande d'un interrupteur, bras de commutation et installation electrique |
CN109347463B (zh) * | 2018-10-26 | 2022-04-19 | 苏州农业职业技术学院 | 一种自动化推拉电磁铁式的拨码装置 |
US11101640B1 (en) | 2020-07-29 | 2021-08-24 | Abb Schweiz | Solid-state protection for direct current networks |
CN115378413B (zh) * | 2022-10-25 | 2023-01-24 | 成都市易冲半导体有限公司 | 控制电路及控制方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1079804A (en) * | 1977-03-14 | 1980-06-17 | Ibm Canada Limited - Ibm Canada Limitee | Voltage sequencing circuit for sequencing voltage to an electrical device |
JPS62109112A (ja) * | 1985-11-08 | 1987-05-20 | Matsushita Electric Ind Co Ltd | 電源シ−ケンス回路 |
JPH1169623A (ja) * | 1997-08-19 | 1999-03-09 | Toyota Autom Loom Works Ltd | GaAsFET用電源回路 |
JP2000083369A (ja) * | 1998-06-24 | 2000-03-21 | Toshiyasu Suzuki | 切換えスイッチング手段、論理回路、双安定回路、多安定回路、切換えスイッチング手段および論理回路 |
DE19902520B4 (de) * | 1999-01-22 | 2005-10-06 | Siemens Ag | Hybrid-Leistungs-MOSFET |
DE10063084B4 (de) * | 2000-12-18 | 2009-12-03 | Siemens Ag | Leistungselektronische Schaltung |
DE10212869A1 (de) * | 2002-03-22 | 2003-09-18 | Siemens Ag | Ansteuerschaltung für einen Sperrschicht-Feldeffekttransistor |
JP2006158185A (ja) * | 2004-10-25 | 2006-06-15 | Toshiba Corp | 電力用半導体装置 |
JP4844007B2 (ja) * | 2005-05-18 | 2011-12-21 | 富士電機株式会社 | 複合型半導体装置 |
JP4600180B2 (ja) * | 2005-06-27 | 2010-12-15 | 株式会社日立製作所 | 電界効果型パワー半導体素子を用いた半導体回路 |
DE102006025374B4 (de) * | 2006-05-31 | 2008-03-13 | Technische Universität Chemnitz | Sperrschicht-Feldeffekttransistor-Anordnung und Verfahren zum Ansteuern eines Sperrschicht-Feldeffekttransistors |
-
2007
- 2007-01-23 FR FR0752840A patent/FR2911736B1/fr not_active Expired - Fee Related
-
2008
- 2008-01-21 DE DE200860001381 patent/DE602008001381D1/de active Active
- 2008-01-21 ES ES08100706T patent/ES2346267T3/es active Active
- 2008-01-21 AT AT08100706T patent/ATE470266T1/de not_active IP Right Cessation
- 2008-01-21 EP EP20080100706 patent/EP1950885B1/de active Active
- 2008-01-23 JP JP2008012478A patent/JP5058835B2/ja active Active
- 2008-01-23 US US12/018,584 patent/US7723869B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
ES2346267T3 (es) | 2010-10-13 |
US20080174184A1 (en) | 2008-07-24 |
EP1950885B1 (de) | 2010-06-02 |
JP2008182884A (ja) | 2008-08-07 |
FR2911736A1 (fr) | 2008-07-25 |
DE602008001381D1 (de) | 2010-07-15 |
JP5058835B2 (ja) | 2012-10-24 |
EP1950885A1 (de) | 2008-07-30 |
US7723869B2 (en) | 2010-05-25 |
FR2911736B1 (fr) | 2009-03-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |