ATE468602T1 - Vorrichtung zum ätzen von wafern durch einzelwafer-verfahren und verfahren zum ätzen von einzelnen wafern - Google Patents

Vorrichtung zum ätzen von wafern durch einzelwafer-verfahren und verfahren zum ätzen von einzelnen wafern

Info

Publication number
ATE468602T1
ATE468602T1 AT06021737T AT06021737T ATE468602T1 AT E468602 T1 ATE468602 T1 AT E468602T1 AT 06021737 T AT06021737 T AT 06021737T AT 06021737 T AT06021737 T AT 06021737T AT E468602 T1 ATE468602 T1 AT E468602T1
Authority
AT
Austria
Prior art keywords
wafer
etching
fluid
wafers
single wafer
Prior art date
Application number
AT06021737T
Other languages
English (en)
Inventor
Sakae Koyata
Tomohiro Hashii
Katsuhiko Murayama
Kazushige Takaishi
Takeo Katoh
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Application granted granted Critical
Publication of ATE468602T1 publication Critical patent/ATE468602T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
AT06021737T 2005-10-18 2006-10-17 Vorrichtung zum ätzen von wafern durch einzelwafer-verfahren und verfahren zum ätzen von einzelnen wafern ATE468602T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005302538A JP2007115728A (ja) 2005-10-18 2005-10-18 ウェーハの枚葉式エッチング装置及びウェーハの枚葉式エッチング方法

Publications (1)

Publication Number Publication Date
ATE468602T1 true ATE468602T1 (de) 2010-06-15

Family

ID=37439805

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06021737T ATE468602T1 (de) 2005-10-18 2006-10-17 Vorrichtung zum ätzen von wafern durch einzelwafer-verfahren und verfahren zum ätzen von einzelnen wafern

Country Status (5)

Country Link
US (2) US7488400B2 (de)
EP (1) EP1777733B1 (de)
JP (1) JP2007115728A (de)
KR (1) KR100760491B1 (de)
AT (1) ATE468602T1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
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WO2006103773A1 (ja) * 2005-03-30 2006-10-05 Mimasu Semiconductor Industry Co., Ltd. スピン処理方法及び装置
JP2007115728A (ja) * 2005-10-18 2007-05-10 Sumco Corp ウェーハの枚葉式エッチング装置及びウェーハの枚葉式エッチング方法
JP2008218545A (ja) * 2007-03-01 2008-09-18 Sumco Corp ウェーハの枚葉式エッチング装置
JP2008251806A (ja) 2007-03-30 2008-10-16 Sumco Corp ウェーハの枚葉式エッチング方法及びそのエッチング装置
KR100912701B1 (ko) * 2007-10-22 2009-08-19 세메스 주식회사 웨이퍼 스핀 척과 스핀 척을 구비한 에칭 장치
KR100889953B1 (ko) * 2007-12-10 2009-03-20 삼성전기주식회사 에칭 장치
US8596623B2 (en) * 2009-12-18 2013-12-03 Lam Research Ag Device and process for liquid treatment of a wafer shaped article
JP5690985B2 (ja) * 2009-12-24 2015-04-01 セイコーエプソン株式会社 支持装置およびエッチング方法
US8945341B2 (en) * 2011-08-22 2015-02-03 Lam Research Ag Method and device for wet treatment of plate-like articles
KR101914298B1 (ko) * 2011-11-04 2018-12-31 삼성디스플레이 주식회사 디스플레이용 글라스 윈도우 가공 장치 및 방법
US9748120B2 (en) 2013-07-01 2017-08-29 Lam Research Ag Apparatus for liquid treatment of disc-shaped articles and heating system for use in such apparatus
US10068791B2 (en) * 2013-03-08 2018-09-04 Semiconductor Components Industries, Llc Wafer susceptor for forming a semiconductor device and method therefor
TWI556878B (zh) * 2014-02-26 2016-11-11 辛耘企業股份有限公司 流體加速裝置
JP6318869B2 (ja) * 2014-05-30 2018-05-09 東京エレクトロン株式会社 成膜装置
CN104201135B (zh) * 2014-08-28 2017-06-30 中航（重庆）微电子有限公司 一种湿法腐蚀装置及其使用方法
CN106971958A (zh) * 2016-01-14 2017-07-21 弘塑科技股份有限公司 单晶圆湿式处理装置
CN106997858B (zh) * 2016-01-26 2020-01-21 弘塑科技股份有限公司 基板湿式处理装置及包括其的单晶圆蚀刻清洗装置
CN105552007B (zh) * 2016-02-24 2019-05-10 北京七星华创电子股份有限公司 一种提高晶片腐蚀均匀性的装置及方法
JP7178177B2 (ja) * 2018-03-22 2022-11-25 東京エレクトロン株式会社 基板処理装置
JP6985981B2 (ja) * 2018-05-29 2021-12-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
KR102262255B1 (ko) * 2019-09-30 2021-06-09 (주)코텍 액정 패널용 식각 장치 및 이를 이용한 식각 방법
CN117476507B (zh) * 2023-12-08 2024-07-09 浙江盾源聚芯半导体科技有限公司 一种硅产品刻蚀清洗机

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JPH02130922A (ja) * 1988-11-11 1990-05-18 Toshiba Corp 半導体基板エッチング装置
JPH07240360A (ja) * 1994-03-01 1995-09-12 Fujitsu Ltd 薬液塗布装置
TW406216B (en) * 1995-05-24 2000-09-21 Tokyo Electron Ltd Apparatus for coating resist on substrate
JPH0910658A (ja) * 1995-06-27 1997-01-14 Hitachi Ltd 塗布方法および塗布装置
JPH09181026A (ja) * 1995-12-25 1997-07-11 Toshiba Corp 半導体装置の製造装置
JPH1092712A (ja) * 1996-09-10 1998-04-10 Sharp Corp 半導体製造装置
SG98022A1 (en) * 1996-09-24 2003-08-20 Tokyo Electron Ltd Method and apparatus for cleaning treatment
JPH11289002A (ja) 1998-04-03 1999-10-19 Toshiba Microelectronics Corp 枚葉処理機構
SG92720A1 (en) * 1999-07-14 2002-11-19 Nisso Engineering Co Ltd Method and apparatus for etching silicon
US6579382B2 (en) * 2000-02-17 2003-06-17 Kabushiki Kaisha Toshiba Chemical liquid processing apparatus for processing a substrate and the method thereof
JP2002064079A (ja) 2000-08-22 2002-02-28 Disco Abrasive Syst Ltd エッチング装置
US6786996B2 (en) * 2001-10-16 2004-09-07 Applied Materials Inc. Apparatus and method for edge bead removal
JP3802507B2 (ja) * 2002-05-20 2006-07-26 株式会社ルネサステクノロジ 半導体装置の製造方法
JP2004335923A (ja) * 2003-05-12 2004-11-25 Sony Corp エッチング方法およびエッチング装置
JP4438709B2 (ja) * 2005-07-19 2010-03-24 株式会社Ｓｕｍｃｏ ウェーハの枚葉式エッチング方法
JP2007115728A (ja) * 2005-10-18 2007-05-10 Sumco Corp ウェーハの枚葉式エッチング装置及びウェーハの枚葉式エッチング方法
JP2008218545A (ja) * 2007-03-01 2008-09-18 Sumco Corp ウェーハの枚葉式エッチング装置
JP2008251806A (ja) * 2007-03-30 2008-10-16 Sumco Corp ウェーハの枚葉式エッチング方法及びそのエッチング装置

Also Published As

Publication number Publication date
KR20070042461A (ko) 2007-04-23
KR100760491B1 (ko) 2007-09-20
EP1777733A2 (de) 2007-04-25
JP2007115728A (ja) 2007-05-10
EP1777733B1 (de) 2010-05-19
EP1777733A3 (de) 2009-01-14
US20070298614A1 (en) 2007-12-27
US7488400B2 (en) 2009-02-10
US8066896B2 (en) 2011-11-29
US20070087568A1 (en) 2007-04-19

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