ATE46592T1 - Mehrschichtschaltung. - Google Patents

Mehrschichtschaltung.

Info

Publication number
ATE46592T1
ATE46592T1 AT85308650T AT85308650T ATE46592T1 AT E46592 T1 ATE46592 T1 AT E46592T1 AT 85308650 T AT85308650 T AT 85308650T AT 85308650 T AT85308650 T AT 85308650T AT E46592 T1 ATE46592 T1 AT E46592T1
Authority
AT
Austria
Prior art keywords
aluminium
silicon oxide
oxide
layer circuit
etching
Prior art date
Application number
AT85308650T
Other languages
English (en)
Inventor
Paul Robert Harvey
Original Assignee
Marconi Electronic Devices
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Marconi Electronic Devices filed Critical Marconi Electronic Devices
Application granted granted Critical
Publication of ATE46592T1 publication Critical patent/ATE46592T1/de

Links

Classifications

    • H10W20/425—
    • H10W20/092—

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
AT85308650T 1985-01-22 1985-11-28 Mehrschichtschaltung. ATE46592T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB08501579A GB2170041B (en) 1985-01-22 1985-01-22 Multilayer circuit
EP85308650A EP0191981B1 (de) 1985-01-22 1985-11-28 Mehrschichtschaltung

Publications (1)

Publication Number Publication Date
ATE46592T1 true ATE46592T1 (de) 1989-10-15

Family

ID=10573238

Family Applications (1)

Application Number Title Priority Date Filing Date
AT85308650T ATE46592T1 (de) 1985-01-22 1985-11-28 Mehrschichtschaltung.

Country Status (4)

Country Link
EP (1) EP0191981B1 (de)
AT (1) ATE46592T1 (de)
DE (1) DE3573195D1 (de)
GB (1) GB2170041B (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62193147A (ja) * 1986-02-19 1987-08-25 Toshiba Corp 半導体装置の製造方法
US4935797A (en) * 1988-10-31 1990-06-19 International Business Machines Corporation Heterojunction bipolar transistors

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5819129B2 (ja) * 1975-12-10 1983-04-16 株式会社東芝 ハンドウタイソウチノ セイゾウホウホウ
DE3244461A1 (de) * 1982-12-01 1984-06-07 Siemens AG, 1000 Berlin und 8000 München Integrierte halbleiterschaltung mit einer aus einer aluminium/silizium-legierung bestehenden kontaktleiterbahnebene

Also Published As

Publication number Publication date
GB8501579D0 (en) 1985-02-20
GB2170041A (en) 1986-07-23
GB2170041B (en) 1988-10-05
EP0191981B1 (de) 1989-09-20
EP0191981A1 (de) 1986-08-27
DE3573195D1 (en) 1989-10-26

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