ATE459906T1 - Ruhestrom-steuerschaltung für hochleistungsverstärker - Google Patents

Ruhestrom-steuerschaltung für hochleistungsverstärker

Info

Publication number
ATE459906T1
ATE459906T1 AT04779143T AT04779143T ATE459906T1 AT E459906 T1 ATE459906 T1 AT E459906T1 AT 04779143 T AT04779143 T AT 04779143T AT 04779143 T AT04779143 T AT 04779143T AT E459906 T1 ATE459906 T1 AT E459906T1
Authority
AT
Austria
Prior art keywords
control circuit
power amplifier
high power
current control
bias
Prior art date
Application number
AT04779143T
Other languages
English (en)
Inventor
Youngoo Yang
Kevin Choi
Bong-Seok Park
Original Assignee
Skyworks Solutions Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Skyworks Solutions Inc filed Critical Skyworks Solutions Inc
Application granted granted Critical
Publication of ATE459906T1 publication Critical patent/ATE459906T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G05F3/222—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Nonlinear Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Control Of Amplification And Gain Control (AREA)
AT04779143T 2003-09-08 2004-07-27 Ruhestrom-steuerschaltung für hochleistungsverstärker ATE459906T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/658,234 US6992524B2 (en) 2003-09-08 2003-09-08 Quiescent current control circuit for high-power amplifiers
PCT/US2004/023938 WO2005027188A2 (en) 2003-09-08 2004-07-27 Quiescent current control circuit for high-power amplifiers

Publications (1)

Publication Number Publication Date
ATE459906T1 true ATE459906T1 (de) 2010-03-15

Family

ID=34226742

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04779143T ATE459906T1 (de) 2003-09-08 2004-07-27 Ruhestrom-steuerschaltung für hochleistungsverstärker

Country Status (8)

Country Link
US (1) US6992524B2 (de)
EP (1) EP1664965B1 (de)
JP (1) JP2007504769A (de)
KR (1) KR100824561B1 (de)
CN (1) CN100483288C (de)
AT (1) ATE459906T1 (de)
DE (1) DE602004025828D1 (de)
WO (1) WO2005027188A2 (de)

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KR100704686B1 (ko) * 2004-09-14 2007-04-06 아바고테크놀로지스코리아 주식회사 다이오드 전압제어를 통한 전력증폭기의 온도보상회로
KR100654646B1 (ko) * 2004-10-11 2006-12-08 아바고테크놀로지스코리아 주식회사 전력증폭기의 온도보상 바이어스 회로
JP2007258949A (ja) * 2006-03-22 2007-10-04 Matsushita Electric Ind Co Ltd 高周波電力増幅器
US9197132B2 (en) 2006-12-01 2015-11-24 Flextronics International Usa, Inc. Power converter with an adaptive controller and method of operating the same
US7408755B1 (en) * 2007-06-12 2008-08-05 Honeywell International Inc. Advanced inrush/transient current limit and overload/short circuit protection method and apparatus for DC voltage power supply
JP5138287B2 (ja) * 2007-06-27 2013-02-06 三菱電機株式会社 ゲート駆動装置
TWI353700B (en) * 2008-01-28 2011-12-01 Sunonwealth Electr Mach Ind Co Motor driver for transient voltage suppression
CN101515717B (zh) * 2008-02-20 2012-07-18 建准电机工业股份有限公司 具瞬间高电压防护的马达驱动电路
US7768353B2 (en) 2008-06-13 2010-08-03 Samsung Electro-Mechanics Company, Ltd. Systems and methods for switching mode power amplifier control
CN102342008B (zh) 2009-01-19 2016-08-03 伟创力国际美国公司 用于功率转换器的控制器
WO2010114914A1 (en) 2009-03-31 2010-10-07 Flextronics International Usa, Inc. Magnetic device formed with u-shaped core pieces and power converter employing the same
US8643222B2 (en) 2009-06-17 2014-02-04 Power Systems Technologies Ltd Power adapter employing a power reducer
US9077248B2 (en) 2009-06-17 2015-07-07 Power Systems Technologies Ltd Start-up circuit for a power adapter
US7876157B1 (en) 2009-08-04 2011-01-25 Skyworks Solutions, Inc. Power amplifier bias circuit having controllable current profile
US8638578B2 (en) 2009-08-14 2014-01-28 Power System Technologies, Ltd. Power converter including a charge pump employable in a power adapter
US8976549B2 (en) 2009-12-03 2015-03-10 Power Systems Technologies, Ltd. Startup circuit including first and second Schmitt triggers and power converter employing the same
US9246391B2 (en) 2010-01-22 2016-01-26 Power Systems Technologies Ltd. Controller for providing a corrected signal to a sensed peak current through a circuit element of a power converter
US8787043B2 (en) 2010-01-22 2014-07-22 Power Systems Technologies, Ltd. Controller for a power converter and method of operating the same
WO2011116225A1 (en) 2010-03-17 2011-09-22 Power Systems Technologies, Ltd. Control system for a power converter and method of operating the same
JP5990781B2 (ja) * 2011-02-14 2016-09-14 パナソニックＩｐマネジメント株式会社 高周波電力増幅器
US8792257B2 (en) 2011-03-25 2014-07-29 Power Systems Technologies, Ltd. Power converter with reduced power dissipation
CN102332473A (zh) * 2011-09-20 2012-01-25 彭艳兵 一种低压降有源二极管
US8792256B2 (en) 2012-01-27 2014-07-29 Power Systems Technologies Ltd. Controller for a switch and method of operating the same
US9190898B2 (en) 2012-07-06 2015-11-17 Power Systems Technologies, Ltd Controller for a power converter and method of operating the same
US9240712B2 (en) 2012-12-13 2016-01-19 Power Systems Technologies Ltd. Controller including a common current-sense device for power switches of a power converter
DE102013104899B4 (de) * 2013-05-13 2020-04-02 Power Systems Technologies, Ltd. Steuerung für einen Schalter und Verfahren zu dessen Betrieb sowie Leistungswandler mit derartiger Steuerung
US9300206B2 (en) 2013-11-15 2016-03-29 Power Systems Technologies Ltd. Method for estimating power of a power converter
CN104104229B (zh) * 2014-07-25 2016-08-31 电子科技大学 一种静态电流控制装置
CN106208983B (zh) * 2016-06-30 2021-07-16 唯捷创芯(天津)电子技术股份有限公司 面向时分复用的多模功率放大器模组、芯片及通信终端
CN106803747B (zh) * 2015-12-01 2020-03-03 唯捷创芯(天津)电子技术股份有限公司 多模功率放大器模组、芯片及通信终端
CN111552343B (zh) * 2020-05-22 2022-08-16 聚洵半导体科技（上海）有限公司 一种低电压小电流偏置电流电路
CN112803905B (zh) * 2021-04-14 2021-09-28 广州慧智微电子有限公司 一种补偿电路

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3922773B2 (ja) * 1997-11-27 2007-05-30 三菱電機株式会社 電力増幅器
EP1062604B1 (de) 1998-03-18 2001-11-07 Siemens Aktiengesellschaft Verfahren und vorrichtung zur ermittlung einer störung eines technischen systems
JP3471648B2 (ja) * 1999-02-26 2003-12-02 富士通カンタムデバイス株式会社 パワーアンプ回路及びそのバイアス回路
JP3532834B2 (ja) * 2000-06-27 2004-05-31 富士通カンタムデバイス株式会社 高周波増幅器バイアス回路、高周波電力増幅器および通信装置
US6359516B1 (en) * 2000-07-21 2002-03-19 Philips Electronics North America Corporation High-frequency amplifier circuit with independent control of quiescent current and bias impedance
US6617928B2 (en) * 2000-10-06 2003-09-09 Skyworks Solutions, Inc. Configurable power amplifier and bias control
US6452454B1 (en) * 2000-11-13 2002-09-17 Conexant Systems, Inc. Temperature compensation module
US6437647B1 (en) * 2001-01-30 2002-08-20 Conexant Systems, Inc. Current mirror compensation system for power amplifiers
US6496073B2 (en) * 2001-03-26 2002-12-17 Skyworks Solutions, Inc. Digitally controlled bias circuit for amplifiers
US6556082B1 (en) * 2001-10-12 2003-04-29 Eic Corporation Temperature compensated current mirror
KR100460721B1 (ko) * 2002-06-29 2004-12-08 학교법인 한국정보통신학원 전력 증폭기의 동작전류 제어 회로
US6946911B2 (en) * 2003-08-08 2005-09-20 Skyworks Solutions, Inc. Temperature-insensitive bias circuit for high-power amplifiers
JP2005101734A (ja) * 2003-09-22 2005-04-14 Toshiba Corp 高出力増幅回路

Also Published As

Publication number Publication date
CN100483288C (zh) 2009-04-29
EP1664965A4 (de) 2007-10-10
KR100824561B1 (ko) 2008-04-24
JP2007504769A (ja) 2007-03-01
CN1846185A (zh) 2006-10-11
WO2005027188A3 (en) 2005-06-02
US6992524B2 (en) 2006-01-31
WO2005027188A2 (en) 2005-03-24
KR20060034732A (ko) 2006-04-24
US20050052224A1 (en) 2005-03-10
EP1664965A2 (de) 2006-06-07
DE602004025828D1 (de) 2010-04-15
EP1664965B1 (de) 2010-03-03

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