ATE454010T1 - Cmos bildsensor mit pixeln, die gemeinsame transistoren haben - Google Patents

Cmos bildsensor mit pixeln, die gemeinsame transistoren haben

Info

Publication number
ATE454010T1
ATE454010T1 AT05250611T AT05250611T ATE454010T1 AT E454010 T1 ATE454010 T1 AT E454010T1 AT 05250611 T AT05250611 T AT 05250611T AT 05250611 T AT05250611 T AT 05250611T AT E454010 T1 ATE454010 T1 AT E454010T1
Authority
AT
Austria
Prior art keywords
transistor
pixels
output node
image sensor
cmos image
Prior art date
Application number
AT05250611T
Other languages
English (en)
Inventor
Xinping He
Hongli Yang
Original Assignee
Omnivision Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=34679370&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE454010(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Omnivision Tech Inc filed Critical Omnivision Tech Inc
Application granted granted Critical
Publication of ATE454010T1 publication Critical patent/ATE454010T1/de

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
    • H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
    • H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
    • H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
    • H04N3/1506—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation with addressing of the image-sensor elements
    • H04N3/1512—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation with addressing of the image-sensor elements for MOS image-sensors, e.g. MOS-CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
AT05250611T 2004-02-04 2005-02-03 Cmos bildsensor mit pixeln, die gemeinsame transistoren haben ATE454010T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/771,839 US7087883B2 (en) 2004-02-04 2004-02-04 CMOS image sensor using shared transistors between pixels with dual pinned photodiode

Publications (1)

Publication Number Publication Date
ATE454010T1 true ATE454010T1 (de) 2010-01-15

Family

ID=34679370

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05250611T ATE454010T1 (de) 2004-02-04 2005-02-03 Cmos bildsensor mit pixeln, die gemeinsame transistoren haben

Country Status (6)

Country Link
US (2) US7087883B2 (de)
EP (1) EP1562371B1 (de)
CN (1) CN100477243C (de)
AT (1) ATE454010T1 (de)
DE (1) DE602005018562D1 (de)
TW (1) TWI256132B (de)

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7859581B2 (en) * 2003-07-15 2010-12-28 Eastman Kodak Company Image sensor with charge binning and dual channel readout
US7045754B2 (en) * 2004-03-30 2006-05-16 Omnivision Technologies, Inc. Hybrid charge coupled CMOS image sensor having an amplification transistor controlled by a sense node
JP4756839B2 (ja) * 2004-09-01 2011-08-24 キヤノン株式会社 固体撮像装置及びカメラ
JP2006093263A (ja) * 2004-09-22 2006-04-06 Seiko Epson Corp 固体撮像装置及びその駆動方法
US7911518B2 (en) * 2005-02-01 2011-03-22 Samsung Electronics Co., Ltd. Variable exposure for color image sensor
US7568628B2 (en) 2005-03-11 2009-08-04 Hand Held Products, Inc. Bar code reading device with global electronic shutter control
JP4518996B2 (ja) * 2005-04-22 2010-08-04 シャープ株式会社 固体撮像装置の製造方法および電子情報装置
US7830437B2 (en) * 2005-05-11 2010-11-09 Aptina Imaging Corp. High fill factor multi-way shared pixel
US7446357B2 (en) * 2005-05-11 2008-11-04 Micron Technology, Inc. Split trunk pixel layout
US7770799B2 (en) 2005-06-03 2010-08-10 Hand Held Products, Inc. Optical reader having reduced specular reflection read failures
US7728896B2 (en) * 2005-07-12 2010-06-01 Micron Technology, Inc. Dual conversion gain gate and capacitor and HDR combination
US7468532B2 (en) * 2005-07-12 2008-12-23 Aptina Imaging Corporation Method and apparatus providing capacitor on an electrode of an imager photosensor
KR100787938B1 (ko) * 2005-07-15 2007-12-24 삼성전자주식회사 공유 능동 화소 센서 구조의 씨모스 이미지 센서 및 그구동 방법
US7432540B2 (en) * 2005-08-01 2008-10-07 Micron Technology, Inc. Dual conversion gain gate and capacitor combination
US20070035649A1 (en) * 2005-08-10 2007-02-15 Micron Technology, Inc. Image pixel reset through dual conversion gain gate
US7511323B2 (en) 2005-08-11 2009-03-31 Aptina Imaging Corporation Pixel cells in a honeycomb arrangement
US20070040922A1 (en) * 2005-08-22 2007-02-22 Micron Technology, Inc. HDR/AB on multi-way shared pixels
US7804117B2 (en) * 2005-08-24 2010-09-28 Aptina Imaging Corporation Capacitor over red pixel
US7800146B2 (en) * 2005-08-26 2010-09-21 Aptina Imaging Corporation Implanted isolation region for imager pixels
US7427734B2 (en) * 2005-10-18 2008-09-23 Digital Imaging Systems Gmbh Multiple photosensor pixel
KR100772892B1 (ko) * 2006-01-13 2007-11-05 삼성전자주식회사 플로팅 확산 영역의 커패시턴스를 제어할 수 있는 공유픽셀형 이미지 센서
US7764315B2 (en) * 2006-08-24 2010-07-27 Dalsa Corporation CMOS imaging facility and a modular array for use in such a facility
US8184190B2 (en) 2006-11-28 2012-05-22 Youliza, Gehts B.V. Limited Liability Company Simultaneous global shutter and correlated double sampling read out in multiple photosensor pixels
US8013920B2 (en) 2006-12-01 2011-09-06 Youliza, Gehts B.V. Limited Liability Company Imaging system for creating an image of an object
JP4425950B2 (ja) * 2007-06-01 2010-03-03 シャープ株式会社 固体撮像装置および電子情報機器
US7924333B2 (en) * 2007-08-17 2011-04-12 Aptina Imaging Corporation Method and apparatus providing shared pixel straight gate architecture
KR100891804B1 (ko) * 2007-09-21 2009-04-07 삼성전기주식회사 씨모스 이미지 센서
US7989749B2 (en) * 2007-10-05 2011-08-02 Aptina Imaging Corporation Method and apparatus providing shared pixel architecture
US7960768B2 (en) * 2008-01-17 2011-06-14 Aptina Imaging Corporation 3D backside illuminated image sensor with multiplexed pixel structure
US7977716B2 (en) * 2008-03-17 2011-07-12 Fairchild Imaging, Inc. CMOS image sensor with improved fill-factor and reduced dark current
US8350939B2 (en) 2008-10-01 2013-01-08 Micron Technology, Inc. Vertical 4-way shared pixel in a single column with internal reset and no row select
GB2466213B (en) * 2008-12-12 2013-03-06 Cmosis Nv Pixel array with shared readout circuitry
US8405750B2 (en) * 2009-06-08 2013-03-26 Aptina Imaging Corporation Image sensors and image reconstruction methods for capturing high dynamic range images
US8488025B2 (en) * 2009-10-20 2013-07-16 AltaSens, Inc Sub-frame tapered reset
JP5537172B2 (ja) 2010-01-28 2014-07-02 ソニー株式会社 固体撮像装置及び電子機器
KR101652933B1 (ko) * 2010-02-17 2016-09-02 삼성전자주식회사 센서, 이의 동작 방법, 및 이를 포함하는 거리 측정 장치
US20110205384A1 (en) * 2010-02-24 2011-08-25 Panavision Imaging, Llc Variable active image area image sensor
CN102281406B (zh) * 2010-06-10 2014-01-01 英属开曼群岛商恒景科技股份有限公司 影像传感器的像素单元和箝位电路
JP5377549B2 (ja) * 2011-03-03 2013-12-25 株式会社東芝 固体撮像装置
CN102158663B (zh) * 2011-04-15 2013-09-11 北京思比科微电子技术股份有限公司 Cmos图像传感器像素及其控制时序
US8913153B2 (en) 2011-10-06 2014-12-16 Aptina Imaging Corporation Imaging systems and methods for generating motion-compensated high-dynamic-range images
US9172889B2 (en) 2012-02-09 2015-10-27 Semiconductor Components Industries, Llc Imaging systems and methods for generating auto-exposed high-dynamic-range images
US9007488B2 (en) 2012-03-08 2015-04-14 Semiconductor Components Industries, Llc Systems and methods for generating interpolated high-dynamic-range images
US9338372B2 (en) 2012-09-19 2016-05-10 Semiconductor Components Industries, Llc Column-based high dynamic range imaging systems
CN103365326B (zh) * 2013-06-21 2015-08-05 天津大学 为像素阵列提供参考电压的均值电压产生电路及方法
US9578223B2 (en) * 2013-08-21 2017-02-21 Qualcomm Incorporated System and method for capturing images with multiple image sensing elements
JP6304738B2 (ja) * 2013-09-18 2018-04-04 ソニーセミコンダクタソリューションズ株式会社 撮像装置、撮像方法、製造装置、製造方法、並びに電子機器
FR3017019A1 (de) 2014-01-24 2015-07-31 St Microelectronics Grenoble 2
KR102717094B1 (ko) 2016-12-27 2024-10-15 삼성전자주식회사 공유 픽셀을 구비한 이미지 센서 및 그 이미지 센서를 구비한 전자 장치
CN108398243B (zh) * 2018-02-28 2021-01-26 京东方科技集团股份有限公司 显示面板及其检测方法、显示装置
US10814324B2 (en) 2018-05-29 2020-10-27 Sharp Life Science (Eu) Limited AM-EWOD array element circuitry with shared sensor components
US10483303B1 (en) * 2018-11-02 2019-11-19 Omnivision Technologies, Inc. Image sensor having mirror-symmetrical pixel columns

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63100879A (ja) 1986-10-17 1988-05-02 Hitachi Ltd 固体撮像装置
JPS63267144A (ja) 1987-04-21 1988-11-04 Brother Ind Ltd 工場における作業指令システム
CA2156530A1 (en) 1994-10-11 1996-04-12 Alexander George Dickinson Active pixel image sensor
JP3031606B2 (ja) 1995-08-02 2000-04-10 キヤノン株式会社 固体撮像装置と画像撮像装置
US6320617B1 (en) * 1995-11-07 2001-11-20 Eastman Kodak Company CMOS active pixel sensor using a pinned photo diode
US5949061A (en) * 1997-02-27 1999-09-07 Eastman Kodak Company Active pixel sensor with switched supply row select
EP0809394B1 (de) 1996-05-22 2008-02-13 Eastman Kodak Company Aktives Bildelement mit einer über eine geschaltete Versorgungsspannung gesteuerte Zeilenauswahl
US6160281A (en) 1997-02-28 2000-12-12 Eastman Kodak Company Active pixel sensor with inter-pixel function sharing
US6107655A (en) * 1997-08-15 2000-08-22 Eastman Kodak Company Active pixel image sensor with shared amplifier read-out
JP3854720B2 (ja) 1998-05-20 2006-12-06 キヤノン株式会社 撮像装置及びそれを用いた撮像システム
US6977684B1 (en) * 1998-04-30 2005-12-20 Canon Kabushiki Kaisha Arrangement of circuits in pixels, each circuit shared by a plurality of pixels, in image sensing apparatus
US6218691B1 (en) * 1998-06-30 2001-04-17 Hyundai Electronics Industries Co., Ltd. Image sensor with improved dynamic range by applying negative voltage to unit pixel
JP2003506926A (ja) 1999-07-29 2003-02-18 ビジョン−サイエンシズ・インコーポレイテッド マルチ・フォトディテクタ・ユニットセル
US6750912B1 (en) 1999-09-30 2004-06-15 Ess Technology, Inc. Active-passive imager pixel array with small groups of pixels having short common bus lines
US7859581B2 (en) * 2003-07-15 2010-12-28 Eastman Kodak Company Image sensor with charge binning and dual channel readout
KR100598015B1 (ko) * 2005-02-07 2006-07-06 삼성전자주식회사 공유 구조 상보성 금속 산화막 반도체 액티브 픽셀 센서어레이의 레이 아웃
US7800146B2 (en) * 2005-08-26 2010-09-21 Aptina Imaging Corporation Implanted isolation region for imager pixels

Also Published As

Publication number Publication date
US20060208163A1 (en) 2006-09-21
DE602005018562D1 (de) 2010-02-11
US7087883B2 (en) 2006-08-08
EP1562371B1 (de) 2009-12-30
CN100477243C (zh) 2009-04-08
CN1652345A (zh) 2005-08-10
TW200527660A (en) 2005-08-16
TWI256132B (en) 2006-06-01
US20050167574A1 (en) 2005-08-04
EP1562371A1 (de) 2005-08-10

Similar Documents

Publication Publication Date Title
ATE454010T1 (de) Cmos bildsensor mit pixeln, die gemeinsame transistoren haben
ATE365380T1 (de) Hybrider, ladungsgekoppelter cmos-bildsensor
TW200514448A (en) Semiconductor device, and control method and device for driving unit component of semiconductor device
ATE356438T1 (de) Cmos bildsensor und verfahren zur ansteuerung eines cmos bildsensors mit erhöhtem dynamikbereich
JP5834412B2 (ja) 赤外線センサー及び赤外線アレイセンサー
JP2007304598A5 (de)
WO2008130471A3 (en) Methods, systems and apparatuses for the design and use of imager sensors
US11323639B2 (en) Image sensor and operation method thereof
TW200726209A (en) Pixel circuits including boosting capacitors, methods of driving the same, and image sensors including the same
US20090244341A1 (en) Active pixel sensor (aps) readout structure with amplification
TW200743208A (en) Complementary metal oxide semiconductor (CMOS) image sensor with extended pixel dynamic range incorporating transfer gate with potential well
EP1475962A4 (de) Röhrenlose abbildungsvorrichtung und kamerasystem
JP2011135515A5 (de)
TW200725878A (en) CMOS image sensor
KR101841639B1 (ko) 열 병렬 싱글-슬로프 아날로그-디지털 변환기를 위한 다이나믹 바이어싱을 갖는 캐스코드 비교기
US20190199951A1 (en) Image sensing device and operating method thereof
US20170302875A1 (en) Semiconductor device
CN103139496A (zh) 基于深亚微米cmos工艺适用于大规模像素阵列的像素结构
US7969493B2 (en) Matching free dynamic digital pixel sensor
EP1667440A4 (de) Festkörperbildbauteilanordnung und kamerasystem
TW200638537A (en) Selective smile formation under transfer gate in a CMOS image sensor pixel
US7791660B2 (en) Solid-state image sensing device and image sensing device
KR20000071486A (ko) 안정한 저전압동작이 가능한 증폭형 고체촬상장치용출력회로
US20050224901A1 (en) Active pixel having buried transistor
KR100694463B1 (ko) 보정회로 및 이를 구비한 이미지 센서

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties