ATE448570T1 - Verfahren zur metallisierung mehrfach wärmebehandelter photovoltaischer solarzellen - Google Patents
Verfahren zur metallisierung mehrfach wärmebehandelter photovoltaischer solarzellenInfo
- Publication number
- ATE448570T1 ATE448570T1 AT07116751T AT07116751T ATE448570T1 AT E448570 T1 ATE448570 T1 AT E448570T1 AT 07116751 T AT07116751 T AT 07116751T AT 07116751 T AT07116751 T AT 07116751T AT E448570 T1 ATE448570 T1 AT E448570T1
- Authority
- AT
- Austria
- Prior art keywords
- metallizing
- solar cells
- heat treated
- multiple heat
- photovoltaic solar
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 238000001465 metallisation Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000011247 coating layer Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/128—Annealing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
- Manufacture And Refinement Of Metals (AREA)
- Processing Of Solid Wastes (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0653884A FR2906404B1 (fr) | 2006-09-21 | 2006-09-21 | Procede de metallisation de cellules photovoltaiques a multiples recuits |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE448570T1 true ATE448570T1 (de) | 2009-11-15 |
Family
ID=38006568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT07116751T ATE448570T1 (de) | 2006-09-21 | 2007-09-19 | Verfahren zur metallisierung mehrfach wärmebehandelter photovoltaischer solarzellen |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7943417B2 (de) |
| EP (1) | EP1903615B1 (de) |
| JP (1) | JP5296357B2 (de) |
| AT (1) | ATE448570T1 (de) |
| DE (1) | DE602007003166D1 (de) |
| ES (1) | ES2336615T3 (de) |
| FR (1) | FR2906404B1 (de) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102007054384A1 (de) * | 2007-11-14 | 2009-05-20 | Institut Für Solarenergieforschung Gmbh | Verfahren zum Herstellen einer Solarzelle mit einer oberflächenpassivierenden Dielektrikumdoppelschicht und entsprechende Solarzelle |
| FR2929755B1 (fr) * | 2008-04-03 | 2011-04-22 | Commissariat Energie Atomique | Procede de traitement d'un substrat semi-conducteur par activation thermique d'elements legers |
| TW201013961A (en) * | 2008-07-16 | 2010-04-01 | Applied Materials Inc | Hybrid heterojunction solar cell fabrication using a metal layer mask |
| US8298856B2 (en) | 2008-07-17 | 2012-10-30 | Uriel Solar, Inc. | Polycrystalline CDTE thin film semiconductor photovoltaic cell structures for use in solar electricity generation |
| KR101445625B1 (ko) | 2008-12-10 | 2014-10-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 스크린 프린팅 패턴 정렬을 위한 향상된 비젼 시스템 |
| JP5183588B2 (ja) * | 2009-07-15 | 2013-04-17 | 三菱電機株式会社 | 光起電力装置の製造方法 |
| DE202010018510U1 (de) | 2009-09-07 | 2017-03-15 | Lg Electronics Inc. | Solarzelle |
| CN102044579B (zh) | 2009-09-07 | 2013-12-18 | Lg电子株式会社 | 太阳能电池 |
| JP5477303B2 (ja) * | 2011-01-12 | 2014-04-23 | 信越化学工業株式会社 | 太陽電池の製造方法 |
| CN102315332B (zh) * | 2011-09-29 | 2013-08-07 | 英利能源(中国)有限公司 | 太阳能电池片热处理工艺 |
| KR101902887B1 (ko) * | 2011-12-23 | 2018-10-01 | 엘지전자 주식회사 | 태양 전지의 제조 방법 |
| US20130199604A1 (en) * | 2012-02-06 | 2013-08-08 | Silicon Solar Solutions | Solar cells and methods of fabrication thereof |
| JP2015519729A (ja) * | 2012-04-02 | 2015-07-09 | ヌソラ インコーポレイテッドnusola Inc. | 光電変換素子及びその製造方法 |
| KR101264367B1 (ko) * | 2012-07-13 | 2013-05-14 | 한국기계연구원 | 투명 전도성 반사방지막을 갖는 광전 소자 |
| US9960287B2 (en) | 2014-02-11 | 2018-05-01 | Picasolar, Inc. | Solar cells and methods of fabrication thereof |
| KR101569415B1 (ko) * | 2014-06-09 | 2015-11-16 | 엘지전자 주식회사 | 태양 전지의 제조 방법 |
| US10593818B2 (en) * | 2016-12-09 | 2020-03-17 | The Boeing Company | Multijunction solar cell having patterned emitter and method of making the solar cell |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3340874A1 (de) * | 1983-11-11 | 1985-05-23 | Telefunken electronic GmbH, 7100 Heilbronn | Verfahren zum herstellen einer solarzelle |
| US4680085A (en) * | 1986-04-14 | 1987-07-14 | Ovonic Imaging Systems, Inc. | Method of forming thin film semiconductor devices |
| JPH0754854B2 (ja) * | 1987-02-20 | 1995-06-07 | 京セラ株式会社 | 太陽電池素子及びその製造方法 |
| JPH03101170A (ja) * | 1989-09-13 | 1991-04-25 | Sharp Corp | 太陽電池の製造方法 |
| US5688366A (en) * | 1994-04-28 | 1997-11-18 | Canon Kabushiki Kaisha | Etching method, method of producing a semiconductor device, and etchant therefor |
| FR2722612B1 (fr) * | 1994-07-13 | 1997-01-03 | Centre Nat Rech Scient | Procede de fabrication d'un materiau ou dispositif photovoltaique, materiau ou dispositif ainsi obteu et photopile comprenant un tel materiau ou dispositif |
| JP2006148155A (ja) * | 1994-07-21 | 2006-06-08 | Sharp Corp | 太陽電池の製造方法および太陽電池 |
| JP3722326B2 (ja) * | 1996-12-20 | 2005-11-30 | 三菱電機株式会社 | 太陽電池の製造方法 |
| JP2002289889A (ja) * | 2001-03-23 | 2002-10-04 | Mitsubishi Electric Corp | 太陽電池モジュール |
| JP2004296801A (ja) * | 2003-03-27 | 2004-10-21 | Kyocera Corp | 太陽電池素子 |
| JP2005135942A (ja) * | 2003-10-28 | 2005-05-26 | Canon Inc | 電極配設方法 |
| US20050189015A1 (en) * | 2003-10-30 | 2005-09-01 | Ajeet Rohatgi | Silicon solar cells and methods of fabrication |
| JP2005154795A (ja) * | 2003-11-21 | 2005-06-16 | Sharp Corp | 薄膜の製造方法および太陽電池 |
| JP4326314B2 (ja) * | 2003-12-08 | 2009-09-02 | シャープ株式会社 | 太陽電池の製造方法 |
| JP2006012913A (ja) * | 2004-06-22 | 2006-01-12 | Sharp Corp | 太陽電池セルの製造方法 |
| JP2006128391A (ja) * | 2004-10-28 | 2006-05-18 | Sharp Corp | 結晶質シリコン基板のその処理方法および光電変換素子 |
| JP4565976B2 (ja) * | 2004-11-24 | 2010-10-20 | 京セラ株式会社 | 太陽電池モジュール |
-
2006
- 2006-09-21 FR FR0653884A patent/FR2906404B1/fr not_active Expired - Fee Related
-
2007
- 2007-08-28 US US11/845,871 patent/US7943417B2/en not_active Expired - Fee Related
- 2007-09-19 DE DE602007003166T patent/DE602007003166D1/de active Active
- 2007-09-19 EP EP07116751A patent/EP1903615B1/de not_active Not-in-force
- 2007-09-19 AT AT07116751T patent/ATE448570T1/de not_active IP Right Cessation
- 2007-09-19 ES ES07116751T patent/ES2336615T3/es active Active
- 2007-09-20 JP JP2007244235A patent/JP5296357B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008078661A (ja) | 2008-04-03 |
| FR2906404A1 (fr) | 2008-03-28 |
| US20080076203A1 (en) | 2008-03-27 |
| EP1903615A1 (de) | 2008-03-26 |
| EP1903615B1 (de) | 2009-11-11 |
| JP5296357B2 (ja) | 2013-09-25 |
| US7943417B2 (en) | 2011-05-17 |
| FR2906404B1 (fr) | 2008-12-19 |
| DE602007003166D1 (de) | 2009-12-24 |
| ES2336615T3 (es) | 2010-04-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ATE448570T1 (de) | Verfahren zur metallisierung mehrfach wärmebehandelter photovoltaischer solarzellen | |
| ATE492908T1 (de) | Verfahren zur herstellung kristalliner silizium- solarzellen mit erhöhter oberflächenpassivierung | |
| WO2005006393A3 (en) | Pinhold porosity free insulating films on flexible metallic substrates for thin film applications | |
| ATE482471T1 (de) | Verfahren zur reinigung einer solarzellenoberflächenöffnung mit einer solarätzungspaste | |
| ATE537562T1 (de) | Verfahren zum herstellen von multikristallinen silizium-solarzellen des n-typs | |
| IL205494A0 (en) | Crystallographically textured metal substrate, crystallographically textured device, cell and photovoltaic module including such device and thin layer deposition method | |
| IL200728A0 (en) | Method for the production of a solar cell and solar cell produced using said method | |
| WO2010062343A3 (en) | Thin two sided single crystal solar cell and manufacturing process thereof | |
| TW200601407A (en) | Method for manufacturing semiconductor substrate and semiconductor substrate | |
| TW200733194A (en) | Method for the manufacture of substrates, in particular for the optical, electronic or optoelectronic areas, and the substrate obtained in accordance with the said method | |
| WO2009140116A3 (en) | Solar cell spin-on based process for simultaneous diffusion and passivation | |
| WO2010062341A3 (en) | Thin interdigitated backside contact solar cell and manufacturing process thereof | |
| WO2006033699A3 (en) | Low thermal budget silicon nitride formation for transistor fabrication | |
| EP1383165A3 (de) | Abziehmethode | |
| WO2010094048A3 (en) | Solar cell absorber layer formed from equilibrium precursor(s) | |
| WO2005034149A3 (de) | Kugel- oder kornförmiges halbleiterbauelement zur verwendung in solarzellen und verfahren zur herstellung; verfahren zur herstellung einer solarzelle mit halbleiterbauelement und solarzelle | |
| RU2007139436A (ru) | Солнечный элемент и способ его изготовления | |
| EP1630873A4 (de) | Solarzelle und prozess zu ihrer herstellung | |
| ATE496392T1 (de) | Herstellungsverfahren für ein siliziumcarbidhalbleiterbauelement | |
| WO2009016795A1 (ja) | 貼り合わせウエーハの製造方法 | |
| TW200802614A (en) | A method of ultra-shallow junction formation using si film alloyed with carbon | |
| ATE550787T1 (de) | Verfahren zur herstellung einer monokristallinen solarzelle | |
| SG155840A1 (en) | A semiconductor wafer with a heteroepitaxial layer and a method for producing the wafer | |
| MY159272A (en) | Silicon thin film solar cell having improved haze and methods of making the same | |
| CN112768552A (zh) | 一种双面perc电池的制备方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |