ATE44335T1 - Elektronische matrix und verfahren zu deren herstellung mit gleichzeitiger oder nachtraeglicher programmierung. - Google Patents

Elektronische matrix und verfahren zu deren herstellung mit gleichzeitiger oder nachtraeglicher programmierung.

Info

Publication number
ATE44335T1
ATE44335T1 AT84300213T AT84300213T ATE44335T1 AT E44335 T1 ATE44335 T1 AT E44335T1 AT 84300213 T AT84300213 T AT 84300213T AT 84300213 T AT84300213 T AT 84300213T AT E44335 T1 ATE44335 T1 AT E44335T1
Authority
AT
Austria
Prior art keywords
layer
lines
selected areas
irradiated
electronic matrix
Prior art date
Application number
AT84300213T
Other languages
English (en)
Inventor
Robert Royce Johnson
Stanford R Ovshinsky
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Application granted granted Critical
Publication of ATE44335T1 publication Critical patent/ATE44335T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/257—Multistable switching devices, e.g. memristors having switching assisted by radiation or particle beam, e.g. optically controlled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Landscapes

  • Semiconductor Memories (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Read Only Memory (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
AT84300213T 1983-01-18 1984-01-13 Elektronische matrix und verfahren zu deren herstellung mit gleichzeitiger oder nachtraeglicher programmierung. ATE44335T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US45891983A 1983-01-18 1983-01-18
US06/513,997 US4545111A (en) 1983-01-18 1983-07-14 Method for making, parallel preprogramming or field programming of electronic matrix arrays
EP84300213A EP0117046B1 (de) 1983-01-18 1984-01-13 Elektronische Matrix und Verfahren zu deren Herstellung mit gleichzeitiger oder nachträglicher Programmierung

Publications (1)

Publication Number Publication Date
ATE44335T1 true ATE44335T1 (de) 1989-07-15

Family

ID=27039156

Family Applications (1)

Application Number Title Priority Date Filing Date
AT84300213T ATE44335T1 (de) 1983-01-18 1984-01-13 Elektronische matrix und verfahren zu deren herstellung mit gleichzeitiger oder nachtraeglicher programmierung.

Country Status (10)

Country Link
US (2) US4545111A (de)
EP (1) EP0117046B1 (de)
KR (1) KR930000719B1 (de)
AT (1) ATE44335T1 (de)
AU (1) AU561855B2 (de)
BR (1) BR8400201A (de)
CA (1) CA1212470A (de)
DE (1) DE3478836D1 (de)
IL (1) IL70716A (de)
IN (1) IN160151B (de)

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US4545111A (en) * 1983-01-18 1985-10-08 Energy Conversion Devices, Inc. Method for making, parallel preprogramming or field programming of electronic matrix arrays

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EP0117046B1 (de) 1989-06-28
IN160151B (de) 1987-06-27
CA1212470A (en) 1986-10-07
IL70716A (en) 1987-03-31
US4545111A (en) 1985-10-08
US4597162A (en) 1986-07-01
AU561855B2 (en) 1987-05-21
DE3478836D1 (en) 1989-08-03
EP0117046A3 (en) 1987-01-14
EP0117046A2 (de) 1984-08-29
BR8400201A (pt) 1984-08-21
AU2240783A (en) 1984-07-19
KR930000719B1 (ko) 1993-01-30
KR840007314A (ko) 1984-12-06
IL70716A0 (en) 1984-04-30

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