ATE433604T1 - Nichtflüchtige multibit-speicherzelle und deren herstellungsverfahren - Google Patents
Nichtflüchtige multibit-speicherzelle und deren herstellungsverfahrenInfo
- Publication number
- ATE433604T1 ATE433604T1 AT04447293T AT04447293T ATE433604T1 AT E433604 T1 ATE433604 T1 AT E433604T1 AT 04447293 T AT04447293 T AT 04447293T AT 04447293 T AT04447293 T AT 04447293T AT E433604 T1 ATE433604 T1 AT E433604T1
- Authority
- AT
- Austria
- Prior art keywords
- volatile
- production
- memory cell
- interface
- semiconductor structure
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 abstract 6
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
- G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
- H01L29/7923—Programmable transistors with more than two possible different levels of programmation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US53212903P | 2003-12-23 | 2003-12-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE433604T1 true ATE433604T1 (de) | 2009-06-15 |
Family
ID=34549620
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT04447293T ATE433604T1 (de) | 2003-12-23 | 2004-12-22 | Nichtflüchtige multibit-speicherzelle und deren herstellungsverfahren |
Country Status (5)
Country | Link |
---|---|
US (1) | US7569882B2 (de) |
EP (1) | EP1548842B1 (de) |
JP (1) | JP5150860B2 (de) |
AT (1) | ATE433604T1 (de) |
DE (1) | DE602004021465D1 (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6753590B2 (en) * | 2002-07-08 | 2004-06-22 | International Business Machines Corporation | High impedance antifuse |
US7456476B2 (en) | 2003-06-27 | 2008-11-25 | Intel Corporation | Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication |
US7221597B2 (en) * | 2004-05-26 | 2007-05-22 | Micron Technology, Inc. | Ballistic direct injection flash memory cell on strained silicon structures |
US7042009B2 (en) | 2004-06-30 | 2006-05-09 | Intel Corporation | High mobility tri-gate devices and methods of fabrication |
US20060086977A1 (en) | 2004-10-25 | 2006-04-27 | Uday Shah | Nonplanar device with thinned lower body portion and method of fabrication |
US7518196B2 (en) | 2005-02-23 | 2009-04-14 | Intel Corporation | Field effect transistor with narrow bandgap source and drain regions and method of fabrication |
WO2006090458A1 (ja) * | 2005-02-24 | 2006-08-31 | Spansion Llc | 半導体装置及びその製造方法 |
US7858481B2 (en) | 2005-06-15 | 2010-12-28 | Intel Corporation | Method for fabricating transistor with thinned channel |
US7547637B2 (en) | 2005-06-21 | 2009-06-16 | Intel Corporation | Methods for patterning a semiconductor film |
US7279375B2 (en) * | 2005-06-30 | 2007-10-09 | Intel Corporation | Block contact architectures for nanoscale channel transistors |
DE102005039365B4 (de) * | 2005-08-19 | 2022-02-10 | Infineon Technologies Ag | Gate-gesteuertes Fin-Widerstandselement, welches als pinch - resistor arbeitet, zur Verwendung als ESD-Schutzelement in einem elektrischen Schaltkreis und Einrichtung zum Schutz vor elektrostatischen Entladungen in einem elektrischen Schaltkreis |
US20070090416A1 (en) | 2005-09-28 | 2007-04-26 | Doyle Brian S | CMOS devices with a single work function gate electrode and method of fabrication |
US7485503B2 (en) | 2005-11-30 | 2009-02-03 | Intel Corporation | Dielectric interface for group III-V semiconductor device |
US8143646B2 (en) | 2006-08-02 | 2012-03-27 | Intel Corporation | Stacking fault and twin blocking barrier for integrating III-V on Si |
US20080149970A1 (en) * | 2006-12-21 | 2008-06-26 | Thomas Shawn G | Multi-gated carbon nanotube field effect transistor |
US8362566B2 (en) | 2008-06-23 | 2013-01-29 | Intel Corporation | Stress in trigate devices using complimentary gate fill materials |
US7692972B1 (en) | 2008-07-22 | 2010-04-06 | Actel Corporation | Split gate memory cell for programmable circuit device |
KR101064593B1 (ko) | 2009-05-12 | 2011-09-15 | 고려대학교 산학협력단 | 1셀 4비트의 비휘발성 메모리 소자 및 그 제조 방법 |
US9263132B2 (en) * | 2011-08-10 | 2016-02-16 | Globalfoundries Singapore Pte. Ltd. | Double gated flash memory |
US8610241B1 (en) * | 2012-06-12 | 2013-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Homo-junction diode structures using fin field effect transistor processing |
US8930866B2 (en) | 2013-03-11 | 2015-01-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of converting between non-volatile memory technologies and system for implementing the method |
WO2015043610A1 (en) * | 2013-09-24 | 2015-04-02 | Khalel Abdel-Rahman Tharwat Refai | Pn-junction diode with multiple contacts and analog-to-digital converter using it |
US9425055B2 (en) * | 2014-05-28 | 2016-08-23 | Freescale Semiconductor, Inc. | Split gate memory cell with a layer of nanocrystals with improved erase performance |
CN105970257B (zh) * | 2016-06-30 | 2018-12-25 | 中国计量大学 | 一种铁-锰-磷磁性合金电镀液及其制备方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4334292A (en) * | 1980-05-27 | 1982-06-08 | International Business Machines Corp. | Low voltage electrically erasable programmable read only memory |
US4998147A (en) * | 1989-07-31 | 1991-03-05 | Motorola, Inc. | Field effect attenuator devices having controlled electrical lengths |
US5739065A (en) * | 1995-10-13 | 1998-04-14 | United Microelectronics Corp. | Method of fabricating a highly sensitive photo sensor |
US6177333B1 (en) * | 1999-01-14 | 2001-01-23 | Micron Technology, Inc. | Method for making a trench isolation for semiconductor devices |
US6255166B1 (en) * | 1999-08-05 | 2001-07-03 | Aalo Lsi Design & Device Technology, Inc. | Nonvolatile memory cell, method of programming the same and nonvolatile memory array |
JP4058219B2 (ja) * | 1999-09-17 | 2008-03-05 | 株式会社ルネサステクノロジ | 半導体集積回路 |
EP1183732A1 (de) | 2000-03-08 | 2002-03-06 | Koninklijke Philips Electronics N.V. | Halbleiterbauelement und dessen herstellungsverfahren |
JP4083975B2 (ja) * | 2000-12-11 | 2008-04-30 | 株式会社ルネサステクノロジ | 半導体装置 |
TW490675B (en) * | 2000-12-22 | 2002-06-11 | Macronix Int Co Ltd | Control method of multi-stated NROM |
US6580120B2 (en) * | 2001-06-07 | 2003-06-17 | Interuniversitair Microelektronica Centrum (Imec Vzw) | Two bit non-volatile electrically erasable and programmable memory structure, a process for producing said memory structure and methods for programming, reading and erasing said memory structure |
JP2003046002A (ja) * | 2001-07-26 | 2003-02-14 | Sony Corp | 不揮発性半導体メモリ装置およびその動作方法 |
US6541814B1 (en) * | 2001-11-06 | 2003-04-01 | Pericom Semiconductor Corp. | MOS variable capacitor with controlled dC/dV and voltage drop across W of gate |
JP3993438B2 (ja) * | 2002-01-25 | 2007-10-17 | 株式会社ルネサステクノロジ | 半導体装置 |
US7358121B2 (en) * | 2002-08-23 | 2008-04-15 | Intel Corporation | Tri-gate devices and methods of fabrication |
-
2004
- 2004-12-21 US US11/019,953 patent/US7569882B2/en active Active
- 2004-12-22 AT AT04447293T patent/ATE433604T1/de not_active IP Right Cessation
- 2004-12-22 DE DE602004021465T patent/DE602004021465D1/de active Active
- 2004-12-22 EP EP04447293A patent/EP1548842B1/de not_active Not-in-force
- 2004-12-24 JP JP2004372684A patent/JP5150860B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE602004021465D1 (de) | 2009-07-23 |
US7569882B2 (en) | 2009-08-04 |
EP1548842A3 (de) | 2008-10-15 |
JP2005210101A (ja) | 2005-08-04 |
EP1548842B1 (de) | 2009-06-10 |
EP1548842A2 (de) | 2005-06-29 |
JP5150860B2 (ja) | 2013-02-27 |
US20050162928A1 (en) | 2005-07-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |