WO2015043610A1 - Pn-junction diode with multiple contacts and analog-to-digital converter using it - Google Patents

Pn-junction diode with multiple contacts and analog-to-digital converter using it Download PDF

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Publication number
WO2015043610A1
WO2015043610A1 PCT/EG2013/000041 EG2013000041W WO2015043610A1 WO 2015043610 A1 WO2015043610 A1 WO 2015043610A1 EG 2013000041 W EG2013000041 W EG 2013000041W WO 2015043610 A1 WO2015043610 A1 WO 2015043610A1
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WIPO (PCT)
Prior art keywords
circuits
analog
store
input
different voltages
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PCT/EG2013/000041
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French (fr)
Inventor
Abdel-Rahman Tharwat Refai KHALEL
Original Assignee
Khalel Abdel-Rahman Tharwat Refai
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Publication of WO2015043610A1 publication Critical patent/WO2015043610A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/005—Electric analogue stores, e.g. for storing instantaneous values with non-volatile charge storage, e.g. on floating gate or MNOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1066—Gate region of field-effect devices with PN junction gate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
    • H03K17/76—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09425—Multistate logic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/12—Analogue/digital converters
    • H03M1/34—Analogue value compared with reference values
    • H03M1/36—Analogue value compared with reference values simultaneously only, i.e. parallel type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K2017/6878—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors using multi-gate field-effect transistors

Definitions

  • the first technique being the most commonly used in PIC Microcontrollers and most other processors, will be illustrated.
  • a guess (prediction) is made for the first input, which gets converted to analog and then compared to the actual value of the input. The result will determine whether the value of the next estimation (guess) will be increased or decreased.
  • the conversion process starts upon applying a start pulse to the start/stop pin, changing the value of the Most Significant Bit of the control register to a high state.
  • the following panel shows the flow chart sketch of the algorithm of a successive method based ADC, which can be made into a program to get an ADC software.
  • the depletion region which is formed whenever an N-type crystal, like a Phosphor doped Silicon, comes to contact with a P-type crystal, like a Boron doped silicon.
  • the depletion region is basically an electric insulator, and it's directly affected by the voltage applied to its sides.
  • the width of the depletion region is proportional to the reverse voltage applied on it.
  • a set of contacts e.g. A,B,C,D,E,F
  • the input level can be read, whether it was voltage, temperature or something else, through its proportionality with the width of the depletion region .
  • This component may have a lot of applications, including but not limited to: Nano technology, since it's very small, very low power consumption.
  • sensors like light sensors and heat sensors, which will be connected to its input, in order to switch on certain machines or sets at a certain temperature or light intensity, as the input will control which if the connectors will be on and off.
  • variable analog voltage E.g. at 3V, connect interface A to output, and at 4V, connect interface B to output.
  • Logical components will be developed to accept more input possibilities. There used to be only two possible inputs [0, 1]. But now, new circuits can be designed to accept more than to possible input, according to the number of output contacts. A three output contact component can accept [0, 1, 2].

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Computing Systems (AREA)
  • Theoretical Computer Science (AREA)
  • Analogue/Digital Conversion (AREA)

Abstract

The idea is that we can determine Analog Values and use them as a Digital Values in a simple way by using "one Diode" and adjust it to take advantage of the "Depletion-Region" In this case we can build any electronic circuit by using Different Voltages method instead of (0-1) Circuits. Applying this Idea and using this new electronic pieces will enable us to build smaller, faster electronic circuits with better performance and lower cost. For example, Storage device will store more than one number "0, 1, 2, 3, etc." in each storage unit depending on the accuracy of manufacture, while current storage device can store only one values (1 or 0), the new electronic circuits allow us to store more information in storage units less in size and quantity also. This application of the new electronic piece will enable us to use Different Voltages method and replace the conventional method (0-1) circuits. There are many other usages and applications, for instance we can use it in all logic circuits as Processor or any other circuit use (0-1) and convert it to circuits use the Different Voltages method to make data processing.

Description

PN-JUNCTION DIODE WITH MULTIPLE CONTACTS AND ANALOG-TO-DIGITAL CONVERTER USING IT
Technical Field :
Electronics
Previous Method:
In order to convert an analog signal to a digital signal, IC's like ADC0804, MC14433 and others are currently being put to use.
Principles of Operation:
There are numerous techniques used by current IC's to convert from analog to digital; each has its advantages and disadvantages. Speed and accuracy are the main factors that determine their efficiency.
The three main techniques are:
1. Successive approximation
2. Integration (single, double, quadratic)
3. Parallel comparator
The first technique, being the most commonly used in PIC Microcontrollers and most other processors, will be illustrated.
Successive Approximation Method:
A guess (prediction) is made for the first input, which gets converted to analog and then compared to the actual value of the input. The result will determine whether the value of the next estimation (guess) will be increased or decreased.
And the following panel shows an example of the successive approximation technique - see panel (1).
The conversion process starts upon applying a start pulse to the start/stop pin, changing the value of the Most Significant Bit of the control register to a high state.
■ Assuming an 8-bit register, its initial guess value will become 1000,0000, which is ½ Vref half the reference voltage. Then that value gets converted to analog using a DAC, and compared to the analog input using a comparator. If the input is greater than the previously guessed value, the comparator gives an output of a high state causing the register to retain its MSB high state, and the converter continues to give an output of ½ V .
■ The converter now proceeds to the next bit, giving it a high state. Thus giving the register the binary value of 1100 0000 . ■ This means the value of the ADC has been increased by ¾ V , to become ( ½ + ¾ )V . Then, this voltage will be compared to the analog input. If its value is greater than that of the input, this bit (MSB-1) will be changed back to zero.
■
■ SEE panel (1)
■ Then bit (MSB-2) will be set to high "1", giving the register the value of 1010 0000 . This will increase the ADC output by 1/16 V after it's been decreased by ½ V . Thus the ADC approximation becomes ( ½ + 1/16)V. And so on ...
■ In other words, as long as the analog input is greater than its approximation, the current bit will be set to high "1". But if it's less than the approximation, the bit will be reset to "0" and the next condition is checked.
■ The following panel shows the flow chart sketch of the algorithm of a successive method based ADC, which can be made into a program to get an ADC software.
■
■ SEE panel (2)
Previous Method Insufficiency:
Most outstanding flaws of the previous method:
1. The relatively high cost of the currently used IC's, which is due to the numerous elements inside the IC, which contains a comparator, a clock, registers and other elements which are used to realize the previously mentioned algorithm.
SEE panel (3), components of the IC : ADC0804
2. High power consumption, due to huge number of inner components.
3. Low speed. This circuit takes a considerably large period of time to perform the numerous comparisons necessary to calculate the converted value.
4. Large area. When used as a module inside a larger chip, like a PIC, it demands a high chip/ board area, which affects the size of the PIC.
5. The accuracy of this kind of converters directly depends on the number of registers that store the converted values. Thus, an increase in its accuracy demands extra registers, which will increase its production cost. What's new about this invention?
It's the idea that analog values can be directly dealt with and treated like a digital signal using only one junction "diode", by employing the depletion region property. This can be done after introducing some modifications to the junction.
Those modifications, shown in the panel, are:
1. A number of contacts on both top and bottom sides of the junction, which will allow the current to flow through it, via its electrons and holes.
2. A layer of insulator on both sides of the junction, to stop the input current, limiting the input's effect to the electric field due to the voltage difference applied to the input.
(see the sketch of the electronic element after modifications) SEE panel (4)
This way, the flaws of the previous method are avoided:
1. The price of the component that will convert an analog signal to a digital signal (this invention), will cost about the same price of a single diode, which is an enormous reduction from the price of the previous part, which consisted of hundreds of transistors and logic gates. So, it will reduce the cost of producing an ADC by the cost of all hundreds of other elements that were eliminated.
2. This component will not consume large amounts of power because.
a. It's only a single element.
b. Doesn't need a large algorithm to convert an analog input to a digital output.
3. It will be faster, because it can directly convert an analog input to digital, unlike the IC that needs an algorithm and a series of comparisons to do it.
4. Does not demand a large area on the chip, and it's about the size of a single diode.
5. Its conversion accuracy depends on the number of contacts introduced to the junction, which will not demand a high cost. We only need to calibrate the distances between the contacts and determining their corresponding analog values. Detailed description:
There is a phenomena that happens within a diode called the depletion region, which is formed whenever an N-type crystal, like a Phosphor doped Silicon, comes to contact with a P-type crystal, like a Boron doped silicon.
See the sketch.
SEE panel (5-A)
The depletion region is basically an electric insulator, and it's directly affected by the voltage applied to its sides.
In case of a reverse connection, depletion region expands, as shown in the sketch.
SEE panel (5-B)
The width of the depletion region is proportional to the reverse voltage applied on it.
Taking advantage of this property, a set of contacts, e.g. A,B,C,D,E,F , can be connected, as in sketch, in a manner so that they will be short circuited together whenever the depletion region is narrow (when they're not in the range of the depletion region). And by applying increasing voltage, the depletion region increases due to the input's electric field, thus disconnecting the output, like a switch.
In case the circuit in the following sketch (panel 6) was subjected to a certain reverse biased input (in order to achieve input-depletion proportionality), contacts A,B,E,F become open circuit, while contacts C,D are short circuited with the input.
By determining the distance between these contacts and calibrating them, the input level can be read, whether it was voltage, temperature or something else, through its proportionality with the width of the depletion region .
SEE panel (6)
After applying input, depletion region increased, all connectors but C,D went open circuit .
Usage of the method:
This component may have a lot of applications, including but not limited to: Nano technology, since it's very small, very low power consumption.
It can be used to replace integrated circuits that convert from analog to digital. And can also be used inside PIC micro controllers to decrease its area and power consumption.
It can also be used along with sensors, like light sensors and heat sensors, which will be connected to its input, in order to switch on certain machines or sets at a certain temperature or light intensity, as the input will control which if the connectors will be on and off.
It can be used with a processor to control a certain module using variable analog voltage. E.g. at 3V, connect interface A to output, and at 4V, connect interface B to output.
It will be useful in the combinational logic field. Logical components will be developed to accept more input possibilities. There used to be only two possible inputs [0, 1]. But now, new circuits can be designed to accept more than to possible input, according to the number of output contacts. A three output contact component can accept [0, 1, 2].
It can also contribute to information storage. Information used to be stored as [0, 1] only. Using this component, more than one piece of information can be stored on the same unit. For example, if this component stores "6", this means the info stored id "110". It's noticeable that a lot of info can be stored on smaller units. It will cause a breakthrough in the memory industry.

Claims

Claims
1. Using depletion region property in practical applications.
2. The New Electronic Component that is a modified junction designed to make use of the depletion region property, seen in panel (7).
SEE panel (7)
PCT/EG2013/000041 2013-09-24 2013-12-18 Pn-junction diode with multiple contacts and analog-to-digital converter using it WO2015043610A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EG2013091488 2013-09-24
EG2013091488 2013-09-24

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WO2015043610A1 true WO2015043610A1 (en) 2015-04-02

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3023405A (en) * 1960-05-17 1962-02-27 Ronald E Scott Analog converter
US3275845A (en) * 1962-12-27 1966-09-27 Motorola Inc Field switching device employing punchthrough phenomenon
EP1548842A2 (en) * 2003-12-23 2005-06-29 Interuniversitair Microelektronica Centrum ( Imec) Non-volatile multibit memory cell and method of manufacturing thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3023405A (en) * 1960-05-17 1962-02-27 Ronald E Scott Analog converter
US3275845A (en) * 1962-12-27 1966-09-27 Motorola Inc Field switching device employing punchthrough phenomenon
EP1548842A2 (en) * 2003-12-23 2005-06-29 Interuniversitair Microelektronica Centrum ( Imec) Non-volatile multibit memory cell and method of manufacturing thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
VORHAUS J L ET AL: "DUAL-GATE GAAS FET SWITCHES", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE SERVICE CENTER, PISACATAWAY, NJ, US, vol. ED-28, no. 2, 1 February 1981 (1981-02-01), pages 204 - 211, XP000199136, ISSN: 0018-9383 *

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