ATE428187T1 - Transistoren mit vergrabenen n- und p-regionen unter der source-region und herstellungsverfahren dafur - Google Patents

Transistoren mit vergrabenen n- und p-regionen unter der source-region und herstellungsverfahren dafur

Info

Publication number
ATE428187T1
ATE428187T1 AT05803118T AT05803118T ATE428187T1 AT E428187 T1 ATE428187 T1 AT E428187T1 AT 05803118 T AT05803118 T AT 05803118T AT 05803118 T AT05803118 T AT 05803118T AT E428187 T1 ATE428187 T1 AT E428187T1
Authority
AT
Austria
Prior art keywords
type conductivity
region
source
drain
buried
Prior art date
Application number
AT05803118T
Other languages
German (de)
English (en)
Inventor
Saptharishi Sriram
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of ATE428187T1 publication Critical patent/ATE428187T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/877—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having recessed gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
AT05803118T 2004-12-15 2005-10-04 Transistoren mit vergrabenen n- und p-regionen unter der source-region und herstellungsverfahren dafur ATE428187T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/012,553 US7326962B2 (en) 2004-12-15 2004-12-15 Transistors having buried N-type and P-type regions beneath the source region and methods of fabricating the same

Publications (1)

Publication Number Publication Date
ATE428187T1 true ATE428187T1 (de) 2009-04-15

Family

ID=36582806

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05803118T ATE428187T1 (de) 2004-12-15 2005-10-04 Transistoren mit vergrabenen n- und p-regionen unter der source-region und herstellungsverfahren dafur

Country Status (8)

Country Link
US (1) US7326962B2 (enExample)
EP (1) EP1825517B1 (enExample)
JP (1) JP4335283B2 (enExample)
KR (1) KR101121600B1 (enExample)
AT (1) ATE428187T1 (enExample)
CA (1) CA2590626C (enExample)
DE (1) DE602005013815D1 (enExample)
WO (1) WO2006065324A2 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5261923B2 (ja) * 2006-10-17 2013-08-14 サンケン電気株式会社 化合物半導体素子
JP5114947B2 (ja) * 2006-12-28 2013-01-09 富士通株式会社 窒化物半導体装置とその製造方法
JP5564842B2 (ja) 2009-07-10 2014-08-06 サンケン電気株式会社 半導体装置
JP5397289B2 (ja) 2010-03-29 2014-01-22 住友電気工業株式会社 電界効果トランジスタ
JP5879694B2 (ja) * 2011-02-23 2016-03-08 ソニー株式会社 電界効果トランジスタ、半導体スイッチ回路、および通信機器
US8476979B1 (en) 2011-07-07 2013-07-02 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration High-efficiency power module
US9024356B2 (en) * 2011-12-20 2015-05-05 Infineon Technologies Austria Ag Compound semiconductor device with buried field plate
US10164038B2 (en) 2013-01-30 2018-12-25 Taiwan Semiconductor Manufacturing Company, Ltd. Method of implanting dopants into a group III-nitride structure and device formed
US9385224B2 (en) * 2014-08-13 2016-07-05 Northrop Grumman Systems Corporation Method of forming an integrated multichannel device and single channel device structure
US12484244B2 (en) 2016-06-24 2025-11-25 Wolfspeed, Inc. Group III-nitride high-electron mobility transistors with gate connected buried p-type layers and process for making the same
US11430882B2 (en) 2016-06-24 2022-08-30 Wolfspeed, Inc. Gallium nitride high-electron mobility transistors with p-type layers and process for making the same
US10192980B2 (en) 2016-06-24 2019-01-29 Cree, Inc. Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
US10840334B2 (en) 2016-06-24 2020-11-17 Cree, Inc. Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
US10892356B2 (en) 2016-06-24 2021-01-12 Cree, Inc. Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same
KR102381395B1 (ko) * 2017-09-18 2022-04-01 한국전기연구원 절연 또는 반절연 ６Ｈ-ＳｉＣ 기판에 구현된 ＳｉＣ 반도체 소자 및 그 제조 방법
US12402346B2 (en) 2021-05-17 2025-08-26 Wolfspeed, Inc. Circuits and group III-nitride transistors with buried p-layers and controlled gate voltages and methods thereof
US11929428B2 (en) 2021-05-17 2024-03-12 Wolfspeed, Inc. Circuits and group III-nitride high-electron mobility transistors with buried p-type layers improving overload recovery and process for implementing the same
US12218202B2 (en) * 2021-09-16 2025-02-04 Wolfspeed, Inc. Semiconductor device incorporating a substrate recess

Family Cites Families (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51424Y2 (enExample) 1971-02-02 1976-01-08
DE2324780C3 (de) 1973-05-16 1978-07-27 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen eines Halbleiterbauelements
JPS6051213B2 (ja) 1978-05-30 1985-11-13 株式会社フジクラ 伸縮自在なテ−プ電線の製造装置
JPS59134874A (ja) 1983-01-21 1984-08-02 Hitachi Ltd 半導体装置の製造方法
JPS60142568A (ja) 1983-12-29 1985-07-27 Sharp Corp 炭化珪素電界効果トランジスタの製造方法
US4762806A (en) 1983-12-23 1988-08-09 Sharp Kabushiki Kaisha Process for producing a SiC semiconductor device
US4737469A (en) 1984-01-19 1988-04-12 Honeywell Inc. Controlled mode field effect transistors and method therefore
JPS60154674A (ja) 1984-01-25 1985-08-14 Hitachi Ltd 電子装置の製造方法
JPS60189250A (ja) 1984-03-08 1985-09-26 Fujitsu Ltd 半導体装置
DE3578271D1 (de) 1984-11-02 1990-07-19 Toshiba Kawasaki Kk Feldeffekttransistor mit einem schottky-gate und herstellungsverfahren dafuer.
JP2615390B2 (ja) 1985-10-07 1997-05-28 工業技術院長 炭化シリコン電界効果トランジスタの製造方法
DE3685495D1 (de) 1986-07-11 1992-07-02 Ibm Verfahren zur herstellung einer unteraetzten maskenkontur.
US5229625A (en) 1986-08-18 1993-07-20 Sharp Kabushiki Kaisha Schottky barrier gate type field effect transistor
JPS6347983A (ja) 1986-08-18 1988-02-29 Sharp Corp 炭化珪素電界効果トランジスタ
JPS6459961A (en) 1987-08-31 1989-03-07 Toshiba Corp Semiconductor device
JPH0797659B2 (ja) 1987-10-20 1995-10-18 三洋電機株式会社 ＳｉＣ青色発光ダイオード
US4947218A (en) 1987-11-03 1990-08-07 North Carolina State University P-N junction diodes in silicon carbide
JPH0798684B2 (ja) 1988-01-19 1995-10-25 日本碍子株式会社 高密度ＳｉＣ焼結体の製造方法
JPH01196873A (ja) 1988-02-02 1989-08-08 Sharp Corp 炭化珪素半導体装置
JP2612040B2 (ja) 1988-06-28 1997-05-21 株式会社豊田中央研究所 β−ＳｉＣを用いたＭＯＳ・ＦＥＴ及びその製造方法
US5014108A (en) 1990-05-15 1991-05-07 Harris Corporation MESFET for dielectrically isolated integrated circuits
JPH04225534A (ja) 1990-12-27 1992-08-14 Fujitsu Ltd 半導体装置及びその製造方法
JPH0547798A (ja) 1991-01-31 1993-02-26 Texas Instr Inc <Ti> 抵抗性ＡｌＧａＡｓを有するＧａＡｓ ＦＥＴ
US5289015A (en) 1991-04-25 1994-02-22 At&T Bell Laboratories Planar fet-seed integrated circuits
US5270554A (en) 1991-06-14 1993-12-14 Cree Research, Inc. High power high frequency metal-semiconductor field-effect transistor formed in silicon carbide
US5264713A (en) 1991-06-14 1993-11-23 Cree Research, Inc. Junction field-effect transistor formed in silicon carbide
US5510630A (en) 1993-10-18 1996-04-23 Westinghouse Electric Corporation Non-volatile random access memory cell constructed of silicon carbide
US5925895A (en) 1993-10-18 1999-07-20 Northrop Grumman Corporation Silicon carbide power MESFET with surface effect supressive layer
US5396085A (en) 1993-12-28 1995-03-07 North Carolina State University Silicon carbide switching device with rectifying-gate
US5399883A (en) 1994-05-04 1995-03-21 North Carolina State University At Raleigh High voltage silicon carbide MESFETs and methods of fabricating same
US5686737A (en) 1994-09-16 1997-11-11 Cree Research, Inc. Self-aligned field-effect transistor for high frequency applications
SE9404452D0 (sv) 1994-12-22 1994-12-22 Abb Research Ltd Semiconductor device having an insulated gate
JP3158973B2 (ja) 1995-07-20 2001-04-23 富士電機株式会社 炭化けい素縦型ｆｅｔ
US5972801A (en) 1995-11-08 1999-10-26 Cree Research, Inc. Process for reducing defects in oxide layers on silicon carbide
JP2728126B2 (ja) 1995-12-25 1998-03-18 日本電気株式会社 電界効果トランジスタ
US5719409A (en) 1996-06-06 1998-02-17 Cree Research, Inc. Silicon carbide metal-insulator semiconductor field effect transistor
DE19644821C1 (de) 1996-10-29 1998-02-12 Daimler Benz Ag Steuerbare Halbleiterstruktur mit verbesserten Schalteigenschaften
US5742082A (en) 1996-11-22 1998-04-21 Motorola, Inc. Stable FET with shielding region in the substrate
US5891769A (en) 1997-04-07 1999-04-06 Motorola, Inc. Method for forming a semiconductor device having a heteroepitaxial layer
US6121633A (en) 1997-06-12 2000-09-19 Cree Research, Inc. Latch-up free power MOS-bipolar transistor
JPH11150124A (ja) 1997-09-12 1999-06-02 Toshiba Corp 電界効果トランジスタおよびその製造方法
JP3216804B2 (ja) 1998-01-06 2001-10-09 富士電機株式会社 炭化けい素縦形ｆｅｔの製造方法および炭化けい素縦形ｆｅｔ
US6107649A (en) 1998-06-10 2000-08-22 Rutgers, The State University Field-controlled high-power semiconductor devices
US6316793B1 (en) 1998-06-12 2001-11-13 Cree, Inc. Nitride based transistors on semi-insulating silicon carbide substrates
US6218680B1 (en) 1999-05-18 2001-04-17 Cree, Inc. Semi-insulating silicon carbide without vanadium domination
US6686616B1 (en) 2000-05-10 2004-02-03 Cree, Inc. Silicon carbide metal-semiconductor field effect transistors
JP2002252233A (ja) * 2001-02-22 2002-09-06 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US6458640B1 (en) 2001-06-04 2002-10-01 Anadigics, Inc. GaAs MESFET having LDD and non-uniform P-well doping profiles
US6906350B2 (en) * 2001-10-24 2005-06-14 Cree, Inc. Delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure
US6956239B2 (en) 2002-11-26 2005-10-18 Cree, Inc. Transistors having buried p-type layers beneath the source region

Also Published As

Publication number Publication date
JP4335283B2 (ja) 2009-09-30
CA2590626C (en) 2014-04-08
EP1825517B1 (en) 2009-04-08
US7326962B2 (en) 2008-02-05
US20060125001A1 (en) 2006-06-15
KR101121600B1 (ko) 2012-02-28
WO2006065324A3 (en) 2006-10-19
JP2008524843A (ja) 2008-07-10
DE602005013815D1 (de) 2009-05-20
KR20070087046A (ko) 2007-08-27
EP1825517A2 (en) 2007-08-29
CA2590626A1 (en) 2006-06-22
WO2006065324A2 (en) 2006-06-22

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