ATE414329T1 - Verbesserung der quanteneffizienz in aktiven pixelsensoren - Google Patents

Verbesserung der quanteneffizienz in aktiven pixelsensoren

Info

Publication number
ATE414329T1
ATE414329T1 AT98952063T AT98952063T ATE414329T1 AT E414329 T1 ATE414329 T1 AT E414329T1 AT 98952063 T AT98952063 T AT 98952063T AT 98952063 T AT98952063 T AT 98952063T AT E414329 T1 ATE414329 T1 AT E414329T1
Authority
AT
Austria
Prior art keywords
quantum efficiency
active pixel
pixel sensors
improved quantum
photosensitive element
Prior art date
Application number
AT98952063T
Other languages
English (en)
Inventor
Eric Fossum
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE414329T1 publication Critical patent/ATE414329T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
AT98952063T 1997-10-06 1998-10-05 Verbesserung der quanteneffizienz in aktiven pixelsensoren ATE414329T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/944,794 US6005619A (en) 1997-10-06 1997-10-06 Quantum efficiency improvements in active pixel sensors

Publications (1)

Publication Number Publication Date
ATE414329T1 true ATE414329T1 (de) 2008-11-15

Family

ID=25482092

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98952063T ATE414329T1 (de) 1997-10-06 1998-10-05 Verbesserung der quanteneffizienz in aktiven pixelsensoren

Country Status (9)

Country Link
US (1) US6005619A (de)
EP (2) EP1021914B1 (de)
JP (2) JP2001519605A (de)
CN (1) CN1281612A (de)
AT (1) ATE414329T1 (de)
AU (1) AU9785198A (de)
CA (1) CA2305727C (de)
DE (1) DE69840214D1 (de)
WO (1) WO1999018717A1 (de)

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KR100606954B1 (ko) * 2004-07-08 2006-08-01 동부일렉트로닉스 주식회사 씨모스 이미지 센서의 포토다이오드 제조방법
KR100672714B1 (ko) * 2004-07-20 2007-01-22 동부일렉트로닉스 주식회사 씨모스 이미지 센서의 제조 방법
US20060113460A1 (en) * 2004-11-05 2006-06-01 Tay Hiok N Image sensor with optimized wire routing
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Also Published As

Publication number Publication date
AU9785198A (en) 1999-04-27
JP2001519605A (ja) 2001-10-23
EP1988578A2 (de) 2008-11-05
EP1021914B1 (de) 2008-11-12
CN1281612A (zh) 2001-01-24
EP1021914A1 (de) 2000-07-26
CA2305727C (en) 2004-05-25
US6005619A (en) 1999-12-21
EP1021914A4 (de) 2006-12-06
EP1988578A3 (de) 2010-03-10
JP2006237622A (ja) 2006-09-07
DE69840214D1 (de) 2008-12-24
JP4791211B2 (ja) 2011-10-12
WO1999018717A1 (en) 1999-04-15
CA2305727A1 (en) 1999-04-15

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