DE69223841T2 - Bilderempfangsapparat - Google Patents

Bilderempfangsapparat

Info

Publication number
DE69223841T2
DE69223841T2 DE69223841T DE69223841T DE69223841T2 DE 69223841 T2 DE69223841 T2 DE 69223841T2 DE 69223841 T DE69223841 T DE 69223841T DE 69223841 T DE69223841 T DE 69223841T DE 69223841 T2 DE69223841 T2 DE 69223841T2
Authority
DE
Germany
Prior art keywords
receiving apparatus
image receiving
image
receiving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69223841T
Other languages
English (en)
Other versions
DE69223841D1 (de
Inventor
Yoshiro Udagawa
Nobuhiro Takeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP03113724A external-priority patent/JP3123768B2/ja
Priority claimed from JP3113723A external-priority patent/JPH04320372A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69223841D1 publication Critical patent/DE69223841D1/de
Application granted granted Critical
Publication of DE69223841T2 publication Critical patent/DE69223841T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
DE69223841T 1991-04-19 1992-04-16 Bilderempfangsapparat Expired - Fee Related DE69223841T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP03113724A JP3123768B2 (ja) 1991-04-19 1991-04-19 撮像素子およびその製造方法
JP3113723A JPH04320372A (ja) 1991-04-19 1991-04-19 撮像装置

Publications (2)

Publication Number Publication Date
DE69223841D1 DE69223841D1 (de) 1998-02-12
DE69223841T2 true DE69223841T2 (de) 1998-05-14

Family

ID=26452664

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69223841T Expired - Fee Related DE69223841T2 (de) 1991-04-19 1992-04-16 Bilderempfangsapparat

Country Status (3)

Country Link
US (1) US5237185A (de)
EP (1) EP0509820B1 (de)
DE (1) DE69223841T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3078720B2 (ja) * 1994-11-02 2000-08-21 三菱電機株式会社 半導体装置およびその製造方法
US6005619A (en) * 1997-10-06 1999-12-21 Photobit Corporation Quantum efficiency improvements in active pixel sensors
FR2781929B1 (fr) 1998-07-28 2002-08-30 St Microelectronics Sa Capteur d'image a reseau de photodiodes
US20010040632A1 (en) * 2000-05-09 2001-11-15 Yang David Xiao Dong Multiple sampling via a time-indexed method to achieve wide dynamic ranges
FR2820882B1 (fr) 2001-02-12 2003-06-13 St Microelectronics Sa Photodetecteur a trois transistors
FR2820883B1 (fr) 2001-02-12 2003-06-13 St Microelectronics Sa Photodiode a grande capacite
FR2824665B1 (fr) * 2001-05-09 2004-07-23 St Microelectronics Sa Photodetecteur de type cmos
KR100442294B1 (ko) * 2001-12-27 2004-07-30 주식회사 하이닉스반도체 이미지 센서
US7633537B2 (en) * 2002-12-18 2009-12-15 Nikon Corporation Color image sensor, color filter array and color imaging device
JP4216583B2 (ja) * 2002-12-27 2009-01-28 日本合成化学工業株式会社 物性算出方法、物性算出装置及びコンピュータプログラム
JP2007235877A (ja) * 2006-03-03 2007-09-13 Fujifilm Corp 多板式固体撮像素子モジュール及び撮像装置
JP4548390B2 (ja) * 2006-06-16 2010-09-22 ソニー株式会社 撮像装置及び信号処理方法
JP4881987B2 (ja) * 2009-10-06 2012-02-22 キヤノン株式会社 固体撮像装置および撮像装置
JP6039165B2 (ja) 2011-08-11 2016-12-07 キヤノン株式会社 撮像素子及び撮像装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3894259A (en) * 1973-01-08 1975-07-08 Block Engineering Mosaic photoelectric target
US4651227A (en) * 1982-08-20 1987-03-17 Olympus Optical Co., Ltd. Video signal recording apparatus with A/D conversion
US4996579A (en) * 1983-02-04 1991-02-26 The United States Of America As Represented By The Secretary Of The Navy Design for electronic spectrally tunable infrared detector
JPS60143668A (ja) * 1983-12-29 1985-07-29 Res Dev Corp Of Japan カラ−用イメ−ジセンサ
US4688072A (en) * 1984-06-29 1987-08-18 Hughes Aircraft Company Hierarchical configurable gate array
JPS6239055A (ja) * 1985-08-13 1987-02-20 Mitsubishi Electric Corp 固体撮像素子
JPH0815211B2 (ja) * 1986-09-25 1996-02-14 株式会社日立製作所 光配線式半導体集積回路
US4901129A (en) * 1987-04-10 1990-02-13 Texas Instruments Incorporated Bulk charge modulated transistor threshold image sensor elements and method of making
JPS6414959A (en) * 1987-04-10 1989-01-19 Texas Instruments Inc Device for sensing threshold of substrate charge modulation type transistor
JPS6414956A (en) * 1987-07-09 1989-01-19 Toshiba Corp Solid-state image pickup device
JPH02275670A (ja) * 1989-01-18 1990-11-09 Canon Inc 光電変換装置および画像読取装置
EP0394598B1 (de) * 1989-04-28 1996-03-06 International Business Machines Corporation Gate-Array-Zelle, bestehend aus FET's von verschiedener und optimierter Grösse

Also Published As

Publication number Publication date
DE69223841D1 (de) 1998-02-12
EP0509820A1 (de) 1992-10-21
EP0509820B1 (de) 1998-01-07
US5237185A (en) 1993-08-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee