ATE403248T1 - Verbesserte spiegel und resonator ausführungen für verteilten bragg- reflektor mit tastgitter - Google Patents

Verbesserte spiegel und resonator ausführungen für verteilten bragg- reflektor mit tastgitter

Info

Publication number
ATE403248T1
ATE403248T1 AT01933039T AT01933039T ATE403248T1 AT E403248 T1 ATE403248 T1 AT E403248T1 AT 01933039 T AT01933039 T AT 01933039T AT 01933039 T AT01933039 T AT 01933039T AT E403248 T1 ATE403248 T1 AT E403248T1
Authority
AT
Austria
Prior art keywords
cavity
light beam
resonator
versions
bragg reflector
Prior art date
Application number
AT01933039T
Other languages
English (en)
Inventor
Gregory Fish
Larry Coldren
Original Assignee
Agility Communications Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agility Communications Inc filed Critical Agility Communications Inc
Application granted granted Critical
Publication of ATE403248T1 publication Critical patent/ATE403248T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1209—Sampled grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1225—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers with a varying coupling constant along the optical axis
AT01933039T 2000-05-04 2001-05-04 Verbesserte spiegel und resonator ausführungen für verteilten bragg- reflektor mit tastgitter ATE403248T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US20305200P 2000-05-04 2000-05-04

Publications (1)

Publication Number Publication Date
ATE403248T1 true ATE403248T1 (de) 2008-08-15

Family

ID=22752272

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01933039T ATE403248T1 (de) 2000-05-04 2001-05-04 Verbesserte spiegel und resonator ausführungen für verteilten bragg- reflektor mit tastgitter

Country Status (9)

Country Link
US (1) US6590924B2 (de)
EP (1) EP1281221B8 (de)
JP (1) JP4989834B2 (de)
CN (1) CN1240167C (de)
AT (1) ATE403248T1 (de)
AU (1) AU2001259503A1 (de)
CA (1) CA2405852A1 (de)
DE (1) DE60135106D1 (de)
WO (1) WO2001084682A2 (de)

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US6691480B2 (en) 2002-05-03 2004-02-17 Faus Group Embossed-in-register panel system
US8209928B2 (en) 1999-12-13 2012-07-03 Faus Group Embossed-in-registration flooring system
GB2377549A (en) * 2001-07-14 2003-01-15 Marconi Caswell Ltd Tuneable laser
US6822995B2 (en) 2002-02-21 2004-11-23 Finisar Corporation GaAs/AI(Ga)As distributed bragg reflector on InP
US8181407B2 (en) 2002-05-03 2012-05-22 Faus Group Flooring system having sub-panels
US7836649B2 (en) 2002-05-03 2010-11-23 Faus Group, Inc. Flooring system having microbevels
US8112958B2 (en) 2002-05-03 2012-02-14 Faus Group Flooring system having complementary sub-panels
US7860137B2 (en) 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
WO2006039341A2 (en) 2004-10-01 2006-04-13 Finisar Corporation Vertical cavity surface emitting laser having multiple top-side contacts
US8201377B2 (en) 2004-11-05 2012-06-19 Faus Group, Inc. Flooring system having multiple alignment points
US20060104321A1 (en) * 2004-11-15 2006-05-18 Lightip Technologies Inc. Q-modulated semiconductor laser with electro-absorptive grating structures
JP4657853B2 (ja) * 2005-08-11 2011-03-23 住友電工デバイス・イノベーション株式会社 半導体レーザ、レーザモジュール、光学部品、レーザ装置、半導体レーザの製造方法および半導体レーザの制御方法
EP1978612B1 (de) * 2007-04-05 2017-08-16 Sumitomo Electric Device Innovations, Inc. Optisches Halbleiterbauelement und Steuerverfahren dafür
US8571084B2 (en) * 2007-08-02 2013-10-29 Technische Universiteit Eindhoven Semiconductor laser device
WO2013016249A2 (en) * 2011-07-22 2013-01-31 Insight Photonic Solutions, Inc. System and method of dynamic and adaptive creation of a wavelength-continuous and prescribed wavelength versus time sweep from a laser
JP2013219192A (ja) * 2012-04-09 2013-10-24 Fujitsu Ltd 半導体レーザ
JP6241919B2 (ja) * 2013-09-30 2017-12-06 住友電工デバイス・イノベーション株式会社 光学半導体デバイス
JP2016051807A (ja) 2014-08-29 2016-04-11 富士通オプティカルコンポーネンツ株式会社 半導体レーザ
US9312662B1 (en) 2014-09-30 2016-04-12 Lumentum Operations Llc Tunable laser source
JP6684094B2 (ja) 2015-03-20 2020-04-22 古河電気工業株式会社 波長可変レーザ素子およびレーザモジュール
WO2016199903A1 (ja) 2015-06-10 2016-12-15 古河電気工業株式会社 パルスレーザ装置
CN105356292B (zh) * 2015-11-30 2018-11-02 武汉电信器件有限公司 一种可调谐波长半导体激光器
CN106981819B (zh) 2016-01-15 2019-05-28 华为技术有限公司 一种可调激光器及其控制方法
CN106941241B (zh) * 2016-10-21 2019-06-04 武汉光迅科技股份有限公司 一种基于ebl的激光器加工方法及其应用方法
CN111162454B (zh) * 2020-01-02 2021-03-12 中国科学院半导体研究所 一种宽波段调谐系统及调谐方法

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Also Published As

Publication number Publication date
CA2405852A1 (en) 2001-11-08
CN1428018A (zh) 2003-07-02
WO2001084682A2 (en) 2001-11-08
EP1281221B1 (de) 2008-07-30
DE60135106D1 (de) 2008-09-11
JP4989834B2 (ja) 2012-08-01
CN1240167C (zh) 2006-02-01
EP1281221A2 (de) 2003-02-05
AU2001259503A1 (en) 2001-11-12
WO2001084682A3 (en) 2002-04-11
US20020105990A1 (en) 2002-08-08
US6590924B2 (en) 2003-07-08
JP2003533037A (ja) 2003-11-05
EP1281221B8 (de) 2008-10-15

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